# IGBT, General Purpose, 20 A, 2.2 V, 208 W, 600 V, TO-263 (D2PAK), 3 Pins ![Product image](https://novapart.co/image/farnell:1885731/) **URL**: https://novapart.co/products/FGB20N60SF/igbt-general-purpose-20-a-22-v-208-w-600-to-263 **SKU**: FGB20N60SF **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €0.9130 **Stock**: 10+ ## Description DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 208W | | Transistor Mounting | Surface Mount | | Transistor Case Style | TO-263 (D2PAK) | | Operating Temperature Max | 150°C | | Continuous Collector Current | 20A | | Collector Emitter Voltage Max | 600V | | Collector Emitter Saturation Voltage | 2.2V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1885731/) ## **Is Now Part of** **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [50 x 7] intentionally omitted <==** **----- Start of picture text -----**
March 2015
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## **FGB20N60SF 600 V, 20 A Field Stop IGBT** ## **Features** - High Current Capability - Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A - High Input Impedance - Fast Switching : EOFF = 8 uJ/A ## **General Description** Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. - RoHS Compliant ## **Applications** - Solar Inverter, UPS, Welder, PFC **==> picture [311 x 90] intentionally omitted <==** **----- Start of picture text -----**
C
COLLECTOR
(FLANGE)
G C E G
D [2] -PAK
E
**----- End of picture text -----**
## **Absolute Maximum Ratings** |**Symbol**|**Description**|**Ratings**|**Unit**| |---|---|---|---| |VCES|Collector to Emitter Voltage|600|V| |VGES|Gate to Emitter Voltage|±20|V| ||Transient Gate-to-Emitter Voltage|±30|| |IC|Collector Current
@ TC= 25oC|40|A| ||Collector Current
@ TC= 100oC|20|A| |ICM (1)|Pulsed Collector Current @ TC= 25oC|60|A| |PD|Maximum Power Dissipation
@ TC= 25oC|208|W| ||Maximum Power Dissipation
@ TC= 100oC|83|W| |TJ|Operating Junction Temperature|-55 to +150|oC| |Tstg|Storage Temperature Range|-55 to +150|oC| |TL|Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds|300|oC| ## **Notes:** 1: Repetitive rating: Pulse width limited by max. junction temperature **Thermal Characteristics Symbol Parameter Typ. Max. Unit** RθJC Thermal Resistance, Junction to Case - 0.6 oC / W RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 40 oC / W ~~Oo~~ **Notes:** 2: Mounted on 1” square PCB(FR4 or G-10 material) **1** ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 www.fairchildsemi.com |**Symbol**
~~es~~|**Parameter**
~~rs~~|**Test Conditions**
~~err~~|**Min.**
~~err~~|**Typ.**
~~err~~|**Max.**
~~err~~|**Unit**
~~err~~| |---|---|---|---|---|---|---| |**Off Characteristics**
~~es~~
~~rserr~~||||||| |BVCES
~~i~~|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 250μA|600|-|-|V| |ΔBVCES/
ΔTJ
~~i~~|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V, IC= 250μA|-|0.6|-|V/oC| |ICES
~~i~~
~~ee~~|Collector Cut-Off Current
~~rs rere~~|VCE= VCES, VGE= 0 V
~~rere~~|-|-|250|μA| |IGES
~~i~~
~~ee~~|G-E Leakage Current
~~rs rere~~|VGE= VGES, VCE= 0 V
~~rere~~|-|-|±400|nA| |**On Characteristics**
~~ee~~
~~rs rere~~||||||| |VGE(th)|G-E Threshold Voltage|IC= 250μA, VCE= VGE
~~ees~~|4.0
~~es~~|5.0
~~es~~|6.5
~~ee~~|V
~~ee~~| |VCE(sat)
~~ee~~|Collector to Emitter Saturation Voltage
~~ee~~|IC= 20 A,VGE= 15 V
~~ee~~
~~ees~~|-
~~ee~~
~~es~~|2.2
~~ee~~
~~es~~|2.8
~~ee~~
~~ee~~|V
~~ee~~
~~ee~~| |||IC= 20 A,VGE= 15 V,
TC= 125oC
~~ee~~
~~ees~~|-
~~ee~~
~~es~~|2.4
~~ee~~
~~es~~|-
~~ee~~
~~ee~~|V
~~ee~~
~~ee~~| |**Dynamic Characteristics**
~~ee~~
~~ees es ee~~||||||| |Cies
~~—~~|Input Capacitance|VCE= 30 V,VGE= 0 V,
f = 1 MHz|-|940|-|pF| |Coes
~~—~~|Output Capacitance||-|110|-|pF| |Cres
~~—~~|Reverse Transfer Capacitance||-|40|-|pF| |**Switching Characteristics**
~~—~~||||||| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 20 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 25oC|-|13|-|ns| |tr|Rise Time||-|16|-|ns| |td(off)|Turn-Off Delay Time||-|90|-|ns| |tf|Fall Time||-|24|48|ns| |Eon|Turn-On Switching Loss||-|0.37|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.16|-|mJ| |Ets|Total Switching Loss||-|0.53|-|mJ| |td(on)|Turn-On Delay Time|VCC= 400 V, IC= 20 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 125oC|-|12|-|ns| |tr|Rise Time||-|16|-|ns| |td(off)|Turn-Off Delay Time||-|95|-|ns| |tf|Fall Time||-|28|-|ns| |Eon|Turn-On Switching Loss||-|0.4|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.28|-|mJ| |Ets|Total Switching Loss||-|0.69|-|mJ| |Qg|Total Gate Charge|VCE= 400 V, IC= 20 A,
VGE= 15 V|-|65|-|nC| |Qge|Gate to Emitter Charge||-|7|-|nC| |Qgc|Gate to Collector Charge||-|33|-|nC| **2** ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [431 x 591] intentionally omitted <==** **----- Start of picture text -----**
60 60
TC = 25oC 20V 12V TC = 125oC 20V 12V
15V 10V 15V 10V
40 40
yo EK
20 20 VGE = 8V
VGE = 8V
0 ATL} 0 LAL
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
60 60
Common Emitter Common Emitter
VGE = 15V VCE = 20V
TC = 25oC TC = 25 o C
40 Pt) TC = 125oC 40 LA TC = 125oC
20 TA) 20 LL Ae
0 ALT} 0 LA
0 1 2 3 4 5 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4 20
Common Emitter Common Emitter
VGE = 15V TC = -40 o C
16
40A
3
20A 128 BET
2
40A
IC = 10A 4
20A
Gas | GS E aese00
IC = 10A
1 ————
0
25 50 75 100 125 0 4 8 12 16 20
eee PrN
Collector-Emitter Case Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]
[A] [A]
C C
Collector Current, I Collector Current, I
[A]
[A] C
C Collector Current, I
Collector Current, I
[V]
[V] CE
CE V
,
Collector-Emitter Voltage
Collector-Emitter Voltage, V
**----- End of picture text -----**
**3** ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [436 x 594] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
TC = 25 o C TC = 125 o C
16128 ToAIRE)AIRE) 16128 pcieeee oe
40A 20A
40A
4 4
TE} Pie
20A
IC = 10A I C = 10A
0 ee 0 ——
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
2500 15
Common Emitter Common Emitter
V GE = 0V, f = 1MHz TC = 25 o C
2000 TC = 25 o C 12
Sn en ee 300V
Cies VCC = 100V 200V
1500 9
Sop) =A
1000 6
Coes
ESS) feet
500 C res SD 3 eee
0 TSS 0 COE
0.1 1 10 30 0 20 40 60 80
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
100 100
10 μ s
10 100 μ s
1ms
10 ms
DC t r
1 Ry (E Common Emitter
2. T*Notes: 1. T 3. Single PulseC J = 150 = 25 [o][o] CC 10 td(on) V ITTC C C CC = 20A = 25 = 125 = 400V, Vo C o C GE = 15V
0.1 eee 5
1 10 100 1000 0 10 20 30 40 50 60
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [ Ω ]
[V]
CE [V]
V, CE
Collector-Emitter Voltage Collector-Emitter Voltage, V
[V]
GE
Capacitance [pF] Gate-Emitter Voltage, V
Collector Current, I [A]c Switching Time [ns]
**----- End of picture text -----**
**Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance** **4** ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 www.fairchildsemi.com **==> picture [504 x 663] intentionally omitted <==** **----- Start of picture text -----**
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000 200
Common Emitter Common Emitter
VIC CC = 20A = 400V, V GE = 15V 100 V TC GE = 25 = 15V, R oC G = 10 Ω
T C = 25 o C T C = 125oC
T C = 125 o C t d(off)
100 tr
t f 10 td(on)
10 at 3 LE
0 10 20 30 40 50 60 0 10 20 30 40
Gate Resistance, RG [ Ω ] Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
300 3
Common Emitter Common Emitter
V GE = 15V, R G = 10 Ω V CC = 400V, V GE = 15V
TC = 25oC IC = 20A
TC = 125oC 1 TC = 25oC
100 t d(off) T C = 125 o C
Eon
Eoff
t f
10 Sr] 0.1 Ee
0 10 20 30 40 0 10 20 30 40 50 60
Collector Current, IC [A] Gate Resistance, RG [ Ω ]
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
10 80
Common Emitter
VGE = 15V, RG = 10 Ω
T C = 25oC
TC = 125oC Eon
1
10
cr
Eoff
0.1
Safe Operating Area
VGE = 15V, TC = 125oC
0.02 ee 1 oT
0 10 20 30 40 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]
Switching Time [ns] Switching Time [ns]
FGB20N60SF — 600 V, 20 A Field Stop IGBT
Switching Time [ns] Switching Loss [mJ]
[A]
C
Switching Loss [mJ]
Collector Current, I
**----- End of picture text -----**
## **Typical Performance Characteristics** **5** ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [437 x 184] intentionally omitted <==** **----- Start of picture text -----**
Figure 19.Transient Thermal Impedance of IGBT
1 Sete peciecec
0.5
0.2
0.1 a
0.1
0.05 PDM
0.02 0.01 t1 t 2
Duty Factor, D = t1/t2
single pulse
[Peak T][j][ = Pdm x Zthjc + T] C
0.01 we
10-5 10-4 10-3 10-2 10-1 100
Rectangular Pulse Duration [sec]
Thermal Response [Zthjc]
**----- End of picture text -----**
**6** ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev. 1.5 www.fairchildsemi.com **==> picture [501 x 692] intentionally omitted <==** **----- Start of picture text -----**
10.67 -A- 10.67
9.65
1.68
4 1.00 4
9.45
9.65
8.38
10.00
1.78 MAX 2
2 0.25 MAX
PLASTIC BODY 3.80
STUB
1 3 1 3
(2.12) 1.781.14 1.05
0.99 0.25 M B A M 5.08
0.51
LAND PATTERN RECOMMENDATION
5.08
UNLESS NOTED, ALL DIMS TYPICAL
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL -B-
4.83
4.06
6.22 MIN
1.65
1.14
4 4
6.86 MIN
15.88
14.61 SEE
DETAIL A
2
2
3 1 3 1
BACK VIEW - DIODE PRODUCTS VERSION NOTES: UNLESS OTHERWISE SPECIFIED
ALTERNATIVE SUPPLIER DETAIL A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
GAGE PLANE DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
0.74 D) LOCATION OF THE PIN HOLE MAY VARY
0.25 0.33 �� (LOWER LEFT CORNER, LOWER CENTER
�� AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
2.79 0.10 B F) FILENAME: TO263A02REV8
1.78 ��
0.25 MAX (5.38) ��
SEATING
PLANE
���������������������
SCALE: 2X
**----- End of picture text -----**
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