# IGBT, 80 A, 1.6 V, 94 W, 650 V, TO-3PF, 3 Pins

![Product image](https://novapart.co/image/farnell:2981090/)

**URL**: https://novapart.co/products/FGAF40S65AQ/igbt-80-a-16-v-94-w-650-to-3pf-3-pins
**SKU**: FGAF40S65AQ
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3800
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:94W; Collector Emitter Voltage V(br)ceo:650V; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 94W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3PF |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2981090/)

## FGAF40S65AQ 

## Field Stop Trench IGBT 

## **650 V, 40 A** 

## **Description** 

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. 

## **Features** 

- Maximum Junction Temperature: TJ = 175°C 

- Positive Temperature Co−efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A 

- 100% of the Parts Tested for ILM (Note 1) 

- High Input Impedance 

- Fast Switching 

**www.onsemi.com** 

**==> picture [192 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCES IC<br>650 V 40 A<br>[-———+ —€~<br>C<br>G<br>E<br>**----- End of picture text -----**<br>


- Tighten Parameter Distribution 

- IGBT with Monolithic Reverse Conducting Diode 

- This Device is Pb−Free and is RoHS Compliant 

## **Applications** 

- PFC, Welder 

**==> picture [50 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−3PF<br>CASE 340AH<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FGAF40S65AQ/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **June, 2018 − Rev. 1** 

**FGAF40S65AQ** 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Device Marking**|**Package**|**Reel Size**|**Tape Width**|**Quantity per Tube**|
|---|---|---|---|---|---|
|FGAF40S65AQ|FGAF40S65AQ|TO−3PF|−|−|30|



## **Table 1. ABSOLUTE MAXIMUM RATINGS** 

|**Symbol**|**Description**||**FGAF40S65AQ**|**Unit**|
|---|---|---|---|---|
|VCES|Collector to Emitter Voltage||650|V|
|VGES|Gate to Emitter Voltage||±20|V|
||Transient Gate to Emitter Voltage||±30|V|
|IC|Collector Current|@ TC= 25°C|80|A|
|||@ TC= 100°C|40||
|ILM(Note 1)|Pulsed Collector Current|@ TC= 25°C|160|A|
|ICM(Note 2)|Pulsed Collector Current||160|A|
|IF|Diode Forward Current|@ TC= 25°C|40|A|
|||@ TC= 100°C|20|A|
|IFM(Note 2)|Pulsed Diode Maximum Forward Current||160|A|
|PD|Maximum Power Dissipation|@ TC= 25°C|94|W|
|||@ TC= 100°C|47|W|
|TJ|Operating Junction Temperature Range||−55 to +175|°C|
|TSTG|Storage Temperature Range||−55 to +175|°C|
|TL|Maximum Lead Temp. for Soldering Purposes, 1/8″from case for 5 sec||300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 7 � , Inductive Load. 

2. Repetitive rating: Pulse width limited by max. junction temperature. 

## **Table 2. THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**FGAF40S65AQ**|**Unit**|
|---|---|---|---|
|R�JC(IGBT)|Thermal Resistance, Junction to Case, Max.|1.6|�C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max.|40|�C/W|



**www.onsemi.com** 

**2** 

**FGAF40S65AQ** 

**Table 3. ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) 

|**Table 3. ELEC**|**TRICAL CHARACTERISTICS OF THE IGB**|**T**(TC= 25°C unless otherwise|noted)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVCES|Collector to Emitter Breakdown Voltage|VGE= 0 V, IC= 1 mA|650|−|−|V|
|�BVCES/�TJ|Temperature Coefficient of Breakdown Voltage|VGE= 0 V, IC= 1 mA|−|0.5|−|V/°C|
|ICES|Collector Cut−Off Current|VCE= VCES, VGE= 0 V|−|−|250|�A|
|IGES|G−E Leakage Current|VGE= VGES, VCE= 0 V|−|−|±400|nA|
|**ON CHARACTERISTICS**|||||||
|VGE(th)|G−E Threshold Voltage|IC= 40 mA, VCE= VGE|2.6|5.3|6.6|V|
|VCE(sat)|Collector to Emitter Saturation Voltage|IC= 40 A, VGE= 15 V|−|1.6|2.1|V|
|||IC= 40 A, VGE= 15 V,<br>TC= 175°C|−|1.9|−|V|
|**DYNAMIC CHARACTERISTICS**|||||||
|Cies|Input Capacitance|VCE= 30 V,VGE= 0 V,<br>f = 1 MHz|−|2590|−|pF|
|Coes|Output Capacitance||−|35|−|pF|
|Cres|Reverse Transfer Capacitance||−|10|−|pF|
|**SWITCHING CHARACTERISTICS**|||||||
|Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 10 A,<br>RG= 6�, VGE= 15 V,<br>Inductive Load, TC= 25°C|−|17.8|−|ns|
|Tr|Rise Time||−|6.3|−|ns|
|Td(off)|Turn−Off Delay Time||−|81.6|−|ns|
|Tf|Fall Time||−|9.3|−|ns|
|Eon|Turn−On Switching Loss||−|132|−|�J|
|Eoff|Turn−Off Switching Loss||−|62|−|�J|
|Ets|Total Switching Loss||−|194|−|�J|
|Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 20 A,<br>RG= 6�, VGE= 15 V,<br>Inductive Load, TC= 25°C|−|19.5|−|ns|
|Tr|Rise Time||−|9.6|−|ns|
|Td(off)|Turn−Off Delay Time||−|76.8|−|ns|
|Tf|Fall Time||−|7.4|−|ns|
|Eon|Turn−On Switching Loss||−|296|−|�J|
|Eoff|Turn−Off Switching Loss||−|111|−|�J|
|Ets|Total Switching Loss||−|407|−|�J|
|Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 10 A,<br>RG= 6�, VGE= 15 V,<br>Inductive Load, TC= 175°C|−|17.5|−|ns|
|Tr|Rise Time||−|6.8|−|ns|
|Td(off)|Turn−Off Delay Time||−|88|−|ns|
|Tf|Fall Time||−|9.7|−|ns|
|Eon|Turn−On Switching Loss||−|285|−|�J|
|Eoff|Turn−Off Switching Loss||−|106|−|�J|
|Ets|Total Switching Loss||−|391|−|�J|



**www.onsemi.com** 

**3** 

**FGAF40S65AQ** 

**Table 3. ELECTRICAL CHARACTERISTICS OF THE IGBT** (TC = 25 ° C unless otherwise noted) 

|**Table 3. ELEC**|**TRICAL CHARACTERISTICS OF THE IGB**|**T**(TC= 25°C unless otherwise|noted)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**SWITCHING CHARACTERISTICS**|||||||
|Td(on)|Turn−On Delay Time|VCC= 400 V, IC= 20 A,<br>RG= 6�, VGE= 15 V,<br>Inductive Load, TC= 175°C|−|19.1|−|ns|
|Tr|Rise Time||−|11.2|−|ns|
|Td(off)|Turn−Off Delay Time||−|81.6|−|ns|
|Tf|Fall Time||−|9.2|−|ns|
|Eon|Turn−On Switching Loss||−|552|−|�J|
|Eoff|Turn−Off Switching Loss||−|186|−|�J|
|Ets|Total Switching Loss||−|738|−|�J|
|Qg|Total Gate Charge|VCE= 400 V, IC= 40 A,<br>VGE= 15 V|−|75|−|nC|
|Qge|Gate to Emitter Charge||−|15|−|nC|
|Qgc|Gate to Collector Charge||−|18|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**Table 4. ELECTRICAL CHARACTERISTICS OF THE DIODE** (TC = 25 ° C unless otherwise noted) 

|**Table 4. ELEC**|**TRICAL CHARACTERISTICS OF T**|**HE DIODE**(TC= 25°C unless otherwis|**HE DIODE**(TC= 25°C unless otherwis|e noted)||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|VFM|Diode Forward Voltage|IF= 20 A|TC= 25°C|−|1.2|1.6|V|
||||TC= 175°C|−|1.16|−||
|Erec|Reverse Recovery Energy|IF= 20 A,<br>dIF/dt = 200 A/�s|TC= 175°C|−|325|−|�J|
|Trr|Diode Reverse Recovery Time||TC= 25°C|−|274|−|ns|
||||TC= 175°C|−|362|−||
|Qrr|Diode Reverse Recovery Charge||TC= 25°C|−|1596|−|nC|
||||TC= 175°C|−|2651|−||



**www.onsemi.com** 

**4** 

**FGAF40S65AQ** 

## **TYPICAL CHARACTERISTICS** 

**Figure 1. Typical Output Characteristics** 

**Figure 2. Typical Output Characteristics** 

**Figure 3. Typical Saturation Voltage Characteristics** 

**Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level** 

**Figure 5. Saturation Voltage vs. VGE** 

**Figure 6. Saturation Voltage vs. VGE** 

**www.onsemi.com** 

**5** 

**FGAF40S65AQ** 

## **TYPICAL CHARACTERISTICS** (Continued) 

**Figure 7. Capacitance Characteristics** 

**Figure 8. Gate Charge Characteristics** 

**Figure 9. Turn−on Characteristics vs. Gate Resistance** 

**Figure 10. Turn−off Characteristics vs. Gate Resistance** 

**Figure 11. Switching Loss vs. Gate Resistance** 

**Figure 12. Turn−on Characteristics vs. Collector Current** 

**www.onsemi.com** 

**6** 

**FGAF40S65AQ** 

## **TYPICAL CHARACTERISTICS** (Continued) 

**Figure 13. Turn−off Characteristics vs. Collector Current** 

**Figure 14. Switching Loss vs. Collector Current** 

**Figure 15. Load Current vs. Frequency** 

**Figure 16. SOA Characteristics** 

**Figure 17. Forward Characteristics** 

**Figure 18. Reverse Recovery Current** 

**www.onsemi.com** 

**7** 

**FGAF40S65AQ** 

## **TYPICAL CHARACTERISTICS** (Continued) 

**Figure 19. Reverse Recovery Time** 

**Figure 20. Stored Charge** 

**Figure 21. Transient Thermal Impedance of IGBT** 

**www.onsemi.com** 

**8** 

**FGAF40S65AQ** 

## **PACKAGE DIMENSIONS** 

**TO−3PF−3L** CASE 340AH ISSUE A 

**==> picture [468 x 309] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEATING NOTES:<br>PLANE 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.<br>E P A 2.3. CONTROLLING DIMENSION: MILLIMETERS.CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).<br>A1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE<br>Q PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO<br>EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA­<br>SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.<br>5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.<br>LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.<br>H1<br>MILLIMETERS<br>DIM MIN MAX<br>A 5.30 5.70<br>A1 2.80 3.20<br>D A2 3.10 3.50<br>A3 1.80 2.20<br>b 0.65 0.95<br>D2 b3b2 3.801.90 4.202.15<br>c 0.80 1.10<br>L2 D3 D 24.30 24.70<br>L1 D2 24.70 25.30<br>D3 3.30 3.70<br>E 15.30 15.70<br>e 5.35 5.55<br>H1 9.80 10.20<br>L 19.10 19.50<br>L1 4.80 5.20<br>L2 1.90 2.20<br>L NOTE 3 P 3.40 3.80<br>Q 4.30 4.70<br>1 2 3<br>c<br>3X b2 3X b A3<br>b3<br>A2<br>‘la e<br>**----- End of picture text -----**<br>


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## **PUBLICATION ORDERING INFORMATION** 

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**FGAF40S65AQ/D** 

**9** 



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