# IGBT, 40 A, 1.4 V, 75 W, 650 V, TO-3PF, 3 Pins
**URL**: https://novapart.co/products/FGAF20S65AQ/igbt-40-a-14-v-75-w-650-to-3pf-3-pins
**SKU**: FGAF20S65AQ
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.7800
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 75W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3PF |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3615743/)
## Field Stop Trench IGBT, 20 A, 650 V
## FGAF20S65AQ
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4[th] generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential.
**www.onsemi.com**
## **Features**
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 20 A
- 100% of the Parts Tested for ILM (Note 1)
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
## **20 A, 650 V VCE(sat) = 1.4 V (Typ.)**
**==> picture [59 x 78] intentionally omitted <==**
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C
G
E
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- IGBT with Monolithic Reverse Conducting Diode
- This Device is Pb−Free and is RoHS Compliant
## **Typical Applications**
- PFC, Welder
## **MAXIMUM RATINGS**
|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector to Emitter Voltage|VCES|650|V|
|Gate to Emitter Voltage
Transient Gate to Emitter Voltage|VGES|±20
±30|V|
|Collector Current
@TC= 25°C
@TC= 100°C|IC|40
20|A|
|Pulsed Collector Current (Note 1)|ILM|60|A|
|Pulsed Collector Current (Note 2)|ICM|60|A|
|Diode Forward Current
@TC= 25°C
@ TC= 100°C|IF|20
10|A|
|Pulsed Diode Maximum Forward Current|IFM|60|A|
|Maximum Power Dissipation@TC= 25°C
@ TC= 100°C|PD|75
37|W|
|Operating Junction / Storage Temperature
Range|TJ, TSTG|−55 to
+175|°C|
|Maximum Lead Temp. for Soldering Pur-
poses, 1/8″from case for 5 seconds|TL|260|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
**TO−3PF CASE 340AH**
**==> picture [90 x 7] intentionally omitted <==**
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MARKING DIAGRAM
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&Y FGAF20S65 AQ&E&3&K ~~7~~ G C E &Y = ON Semiconductor Logo &E = Designate space on marking &3 = 3−Digit Data Code &K = 2−Digit Lot Traceability Code FGAF20S65AQ = Specific Device Code
1. VCC = 400 V, VGE = 15 V, IC = 60 A , RG = 23 | Inductive Load, 100% Tested
2. Repetitive rating: pulse width limited by max. Junction temperature
|**ORDERING INFORMATION**|
|---|
|**Device**
**Package**
**Shipping**
FGAF20S65AQ
TO−3PF−3L
30 Units / Rail
~~—~~|
Publication Order Number: **FGAF20S65AQ/D**
**1**
© Semiconductor Components Industries, LLC, 2019 **June, 2020 − Rev. 2**
**FGAF20S65AQ**
## **Table 1. THERMAL CHARACTERISTICS**
|**Table 1. THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Case, for IGBT|R�JC|2|�C/W|
|Thermal Resistance, Junction−to−Case, for Diode|R�JC|3.6|�C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|40|�C/W|
**Table 2. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified)
|**Table 2. ELECTRICAL CHARACTER**|**ISTICS**(TJ= 25°C unless otherwise spe|cified)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTIC**|||||||
|Collector−emitter breakdown voltage,
gate−emitter short−circuited|VGE= 0 V, IC= 1 mA|BVCES|650|−|−|V|
|Temperature Coefficient of Breakdown
Voltage|VGE= 0 V, IC= 1 mA|�BVCES/
�TJ|−|0.5|−|V/°C|
|Collector−emitter cut−off current, gate−
emitter short−circuited|VGE= 0 V, VCE= 650 V|ICES|−|−|250|�A|
|Gate leakage current, collector−emitter
short−circuited|VGE= 20 V, VCE= 0 V|IGES|−|−|±400|nA|
|**ON CHARACTERISTIC**|||||||
|Gate−emitter threshold voltage|VGE= VCE, IC= 20mA|VGE(th)|2.6|5.3|6.6|V|
|Collector−emitter saturation voltage|VGE= 15 V, IC= 20 A
VGE= 15 V, IC= 20 A, TJ= 175°C|VCE(sat)|−
−|1.4
1.7|2.1
−|V|
|**DYNAMIC CHARACTERISTIC**|||||||
|Input capacitance|VCE= 30 V, VGE= 0 V, f = 1 MHz|Cies|−|1319|−|pF|
|Output capacitance||Coes|−|21|−||
|Reverse transfer capacitance||Cres|−|6|−||
|Gate charge total|VCE= 400 V, IC= 20A, VGE= 15 V|Qg|−|38|−|nC|
|Gate to emitter charge||Qge|−|9|−||
|Gate to collector charge||Qgc|−|11|−||
|**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**|||||||
|Turn−on delay time|TJ= 25°C
VCC= 400 V, IC= 5 A
Rg= 23�
VGE= 15 V
Inductive Load|td(on)|−|16|−|ns|
|Rise time||tr|−|6.4|−||
|Turn−off delay time||td(off)|−|109|−||
|Fall time||tf|−|27|−||
|Turn−on switching loss||Eon|−|200|−|�J|
|Turn−off switching loss||Eoff|−|56|−||
|Total switching loss||Ets|−|256|−||
|Turn−on delay time|TJ= 25°C
VCC= 400 V, IC= 10A
Rg= 23�
VGE= 15 V
Inductive Load|td(on)|−|18|−|ns|
|Rise time||tr|−|11|−||
|Turn−off delay time||td(off)|−|102|−||
|Fall time||tf|−|21|−||
|Turn−on switching loss||Eon|−|345|−|�J|
|Turn−off switching loss||Eoff|−|95|−||
|Total switching loss||Ets|−|440|−||
**www.onsemi.com**
**2**
## **FGAF20S65AQ**
**Table 2. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified)
|**Table 2. ELECTRICAL CHARACTER**|**ISTICS**(TJ= 25°C unless otherwise spe|cified)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**SWITCHING CHARACTERISTIC, INDUCTIVE LOAD**|||||||
|Turn−on delay time|TJ= 175°C
VCC= 400 V, IC= 5 A
Rg= 23�
VGE= 15 V
Inductive Load|td(on)|−|14.4|−|ns|
|Rise time||tr|−|6.4|−||
|Turn−off delay time||td(off)|−|118|−||
|Fall time||tf|−|51|−||
|Turn−on switching loss||Eon|−|301|−|�J|
|Turn−off switching loss||Eoff|−|94|−||
|Total switching loss||Ets|−|395|−||
|Turn−on delay time|TJ= 175°C
VCC= 400 V, IC= 10A
Rg= 23�
VGE= 15 V
Inductive Load|td(on)|−|16|−|ns|
|Rise time||tr|−|12|−||
|Turn−off delay time||td(off)|−|114|−||
|Fall time||tf|−|46|−||
|Turn−on switching loss||Eon|−|466|−|�J|
|Turn−off switching loss||Eoff|−|177|−||
|Total switching loss||Ets|−|643|−||
|**DIODE CHARACTERISTIC**|||||||
|Forward Voltage|IF= 10A
IF= 10A, TJ= 175°C|VF|−
−|1.3
1.3|1.6
−|V|
|Reverse Recovery Energy|IF= 10 A, dlF/dt = 200 A/�s|Erec|−|179|−|�J|
|Diode Reverse Recovery Time|IF= 10 A, dlF/dt = 200 A/�s
IF=10 A, dlF/dt = 200 A/�s, TJ= 175°C|Trr|−|235
302|−|nS|
|Diode Reverse Recovery Charge|IF= 10 A, dlF/dt = 200 A/�s
IF= 10 A, dlF/dt = 200 A/�s, TJ= 175°C|Qrr|−|802
1286|−|nC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
**www.onsemi.com**
**3**
**FGAF20S65AQ**
## **TYPICAL CHARACTERISTICS**
**==> picture [238 x 173] intentionally omitted <==**
**----- Start of picture text -----**
120
TJ = 25 ° C 20 V 15 V 12 V
10 V
80
VGE = 8 V
40
0
0 1 2 3 4 5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**Figure 1. Typical Output Characteristics**
**==> picture [238 x 156] intentionally omitted <==**
**----- Start of picture text -----**
120
TJ = 175 ° C 20 V 15 V
12 V
80 10 V
VGE = 8 V
40
0
0 1 2 3 4 5
, COLLECTOR CURRENT (A)
IC
**----- End of picture text -----**
**==> picture [159 x 9] intentionally omitted <==**
**----- Start of picture text -----**
VCE, COLLECTOR−EMITTER VOLTAGE (V)
**----- End of picture text -----**
**Figure 2. Typical Output Characteristics**
**==> picture [240 x 381] intentionally omitted <==**
**----- Start of picture text -----**
120
Common Emitter
V GE = 15 V
TJ = 25 ° C
80
TJ = 175 ° C
40
0
0 1 2 3 4 5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Saturation Voltage
Characteristics
20
Common Emitter
TJ = 25 ° C
16
12
8 IC = 40 A
4 I C = 20 A
0 IC = 10 A
0 4 8 12 16 20
VGE, GATE−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
IC
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**Figure 5. Saturation Voltage vs. VGE**
**==> picture [239 x 385] intentionally omitted <==**
**----- Start of picture text -----**
3.0
Common Emitter
VGE = 15 V
2.5
IC = 40 A
2.0
I C = 20 A
1.5
IC = 10 A
1.0
−100 −50 0 50 100 150 200
TC, COLLECTOR−EMITTER CASE TEMPERATURE ( ° C)
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
TJ = 175 ° C
16
12
8 I C = 20 A
4 I C = 10 A
0 IC = 40 A
0 4 8 12 16 20
VGE, GATE−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
**----- End of picture text -----**
**Figure 6. Saturation Voltage vs. VGE**
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**4**
**FGAF20S65AQ**
## **TYPICAL CHARACTERISTICS**
**==> picture [239 x 174] intentionally omitted <==**
**----- Start of picture text -----**
15
Common Emitter
12 TJ = 25J = 25 = 25 ° C VCCCC = 400 V 400 V
V CC = 200 V
9
6 VCC = 300 VCC = 300 V = 300 V
3
0
0 15 30 45
Qg, GATE CHARGE (nC)g, GATE CHARGE (nC), GATE CHARGE (nC)
, GATE−EMITTER VOLTAGE (V)
GE
V
**----- End of picture text -----**
**==> picture [490 x 591] intentionally omitted <==**
**----- Start of picture text -----**
Common Emitter Common Emitter
10K °
VTJGE = 25 = 0 V, f = 1 MHz ° C 12 TJ = 25J = 25 = 25 C VCCCC = 400 V 400 V
Cies
1K V CC = 200 V
9
100
6 VCC = 300 VCC = 300 V = 300 V
Coes
10
3
Cres
1 0
1 10 30 0 15 30 45
VCE, COLLECTOR−EMITTER VOLTAGE (V) Qg, GATE CHARGE (nC)g, GATE CHARGE (nC), GATE CHARGE (nC)
Figure 7. Capacitance Characteristics Figure 8. Gate Charge
200 1000
100
t d(off) , T J = 175 ° C
tr, TJ = 175 ° C tr, TJ = 25 ° C 100 td(off), TJ = 25 ° C
td(on), TJ = 25 ° C tf, TJ = 175 ° C
td(on), TJ = 175 ° C
10
tf, TJ = 25 ° C
10
Common Emitter Common Emitter
VCC = 400 V, VGE = 15 V VCC = 400 V, VGE = 15 V
IC = 20 A IC = 20 A
1 1
10 20 30 40 50 10 20 30 40 50 60
Rg, GATE RESISTANCE ( � ) Rg, GATE RESISTANCE ( � )
Figure 9. Turn−On Characteristics vs. Gate Figure 10. Turn−Off Characteristics vs. Gate
Resistance Resistance
5000 1000
Common Emitter Common Emitter
V IC CC = 20 A = 400 V, VGE = 15 V V RCC G = 23 = 400 V � , V GE = 15 V td(on), TJ = 25 ° C
1000 E on , T J = 175 ° C 100 tr, TJ = 175 ° C
Eon, TJ = 25 ° C t r , T J = 25 ° C
Eoff, TJ = 175 ° C 10 t d(on) , T J = 175 ° C
Eoff, TJ = 25 ° C
100 1
10 20 30 40 50 60 0 10 20 30 40 50 60
Rg, GATE RESISTANCE ( � ) IC, COLLECTOR CURRENT (A)
CAPACITANCE (pF)
, GATE−EMITTER VOLTAGE (V)
GE
V
SWITCHING TIME (ns) SWITCHING TIME (ns)
J)
�
SWITCHING LOSS ( SWITCHING TIME (ns)
**----- End of picture text -----**
**Figure 11. Switching Loss vs. Gate Resistance**
**Figure 12. Turn−On Characteristics vs. Collector Current**
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**5**
**FGAF20S65AQ**
## **TYPICAL CHARACTERISTICS**
**==> picture [491 x 591] intentionally omitted <==**
**----- Start of picture text -----**
1000 10K
Eon, TJ = 25 ° C
100 t t d(off) d(off) , T , T J J = 175 = 25 ° ° C C 1K Eon, TJ = 175 ° C
tf, TJ = 25 ° C E off , T J = 175 ° C
10 100
tf, TJ = 175 ° C Common Emitter Eoff, TJ = 25 ° C Common Emitter
V CC = 400 V, V GE = 15 V V CC = 400 V, V GE = 15 V
RG = 23 � R G = 23 �
1 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 13. Turn−Off Characteristics vs. Figure 14. Switching Loss vs. Collector
Collector Current Current
70 300
Square Wave
60 T J = 25 ° C VCC = 400 V, VGE = 15/0 V 100
TJ ≤ 175 ° C, D = 0.5 V
50 TJ = 75 ° C RG = 23 � 10 � s
40 T J = 100 ° C 10
100 � s
30
1 ms
20 1
TJ = 25 ° C
10 TJ = 175 ° C 10 ms
Single Pulse DC
0 0.1
1K 10K 100K 1M 1 10 100 1000
SWITCHING FREQUENCY (fHz) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics (FBSOA)
40 12
T J = 25 ° C TJ = 175 ° C
10 TJ = 175 ° C, di/dt = 200 A/ � s
TJ = 75 ° C 8 TJ = 25 ° C, di/dt = 200 A/ � s
10
6 TJ = 175 ° C, di/dt = 100 A/ � s
TJ = 25 ° C, di/dt = 100 A/ � s
4
2
1 0
0 1 2 3 4 5 0 10 20 30 40
VF, FORWARD VOLTAGE (V) IF, FORWARD CURRENT (A)
J)
�
SWITCHING TIME (ns) SWITCHING LOSS (
, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)
IC IC
, FORWARD CURRENT (A)
IF
, REVERSE RECOVERY CURRENT (A)
Irr
**----- End of picture text -----**
**Figure 17. Forward Characteristics**
**Figure 18. Reverse Recovery Current**
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**6**
**FGAF20S65AQ**
## **TYPICAL CHARACTERISTICS**
**==> picture [488 x 173] intentionally omitted <==**
**----- Start of picture text -----**
600 2000
TJ = 175 ° C, di/dt = 200 A/ � s 1750 TJ = 175 ° C, di/dt = 100 A/ � s TJ = 175 ° C, di/dt = 200 A/ � s
500 T J = 175 ° C, di/dt = 100 A/ � s
1500
400
1250
300 1000
TJ = 25 ° C, di/dt = 200 A/ � s 750 TJ = 25 ° C, di/dt = 100 A/ � s
200
500
100 TJ = 25 ° C, di/dt = 100 A/ � s 250 TJ = 25 ° C, di/dt = 200 A/ � s
0 0
0 10 20 30 40 0 10 20 30 40
IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A)
, REVERSE RECOVERY TIME (ns)
trr , STORED RECOVERY CHARGE (nC)
rr
Q
**----- End of picture text -----**
**Figure 19. Reverse Recovery Time**
**Figure 20. Stored Charge**
**==> picture [487 x 386] intentionally omitted <==**
**----- Start of picture text -----**
3
50% Duty Cycle
1
20%
10%
5%
0.1
2%
P DM Notes:
1% Peak TJ = PDM x Z � JC (t) + TC
t1 Duty Cycle, D = t 1 /t 2
Single Pulse t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
RECTANGULAR PULSE DURATION (sec)
Figure 21. Transient Thermal Impedance of IGBT
5
50% Duty Cycle
20%
1
10%
5%
2%
1%
0.1 Single Pulse P DM Notes:
Peak TJ = PDM x Z � JC (t) + TC
t 1 Duty Cycle, D = t1/t2
t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
RECTANGULAR PULSE DURATION (sec)
)JC
�
THERMAL RESPONSE (Z
)JC
�
THERMAL RESPONSE (Z
**----- End of picture text -----**
**Figure 22. Transient Thermal Impedance of Diode**
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**7**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−3PF−3L** CASE 340AH ISSUE A
## DATE 09 JAN 2015
**==> picture [468 x 309] intentionally omitted <==**
**----- Start of picture text -----**
SEATING NOTES:
PLANE 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
E P A 2.3. CONTROLLING DIMENSION: MILLIMETERS.CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
A1 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
Q PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
H1
MILLIMETERS
DIM MIN MAX
A 5.30 5.70
A1 2.80 3.20
D A2 3.10 3.50
A3 1.80 2.20
b 0.65 0.95
D2 b3b2 3.801.90 4.202.15
c 0.80 1.10
L2 D3 D 24.30 24.70
L1 D2 24.70 25.30
D3 3.30 3.70
E 15.30 15.70
e 5.35 5.55
H1 9.80 10.20
L 19.10 19.50
L1 4.80 5.20
L2 1.90 2.20
L NOTE 3 P 3.40 3.80
Q 4.30 4.70
1 2 3
c
3X b2 3X b A3
b3
A2
e
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**----- Start of picture text -----**
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON79755E Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−3PF−3L PAGE 1 OF 1
**----- End of picture text -----**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
**==> picture [232 x 43] intentionally omitted <==**
## Links
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---
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