# IGBT, 120 A, 1.9 V, 600 W, 650 V, TO-3PN, 3 Pins

![Product image](https://novapart.co/image/farnell:2825136/)

**URL**: https://novapart.co/products/FGA60N65SMD/igbt-120-a-19-v-600-w-650-to-3pn-3-pins
**SKU**: FGA60N65SMD
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.2400
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Description

DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PN; No. of Pins:3Pins;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 600W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3PN |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 120A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825136/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

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## **FGA60N65SMD 650 V, 60 A Field Stop IGBT** 

## **Features** 

- Maximum Junction Temperature : TJ = 175[o] C 

- Positive Temperature Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A 

## **General Description** 

Using novel field stop IGBT technology, Fairchild’s new series of field stop 2[nd] generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. 

- Fast Switching : EOFF = 7.5 uJ/A 

- Tighten Parameter Distribution 

- RoHS Compliant 

## **Applications** 

- Solar Inverter, UPS,  Welder, PFC, Telecom, ESS 

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TO-3PN<br>G C E<br>**----- End of picture text -----**<br>


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C<br>G<br>| E<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Symbol**|**Description**|**Ratings**|**Unit**|
|---|---|---|---|
|VCES|Collector to Emitter Voltage|650|V|
|VGES|Gate to Emitter Voltage|± 20|V|
||Transient Gate to Emitter Voltage|± 30|V|
|IC|Collector Current<br>@ TC= 25oC|120|A|
||Collector Current<br>@ TC= 100oC|60|A|
|ICM(1)|Pulsed Collector Current|180|A|
|IF|Diode Forward Current<br>@ TC= 25oC|60|A|
||Diode Forward Current<br>@ TC= 100oC|30|A|
|IFM(1)|Pulsed Diode Maximum Forward Current|180|A|
|PD|Maximum Power Dissipation<br>@ TC= 25oC|600|W|
||Maximum Power Dissipation<br>@ TC= 100oC|300|W|
|TJ|Operating Junction Temperature|-55 to +175|oC|
|Tstg|Storage Temperature Range|-55 to +175|oC|
|TL|Maximum Lead Temp. for soldering<br>Purposes, 1/8” from case for 5 seconds|300|oC|



## **Notes:** 

1: Repetitive rating: Pulse width limited by max. junction temperature 

**1** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Off Characteristics**|||||||
|BVCES|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0V, IC= 250μA|650|-|-|V|
|ΔBVCES<br>ΔTJ|Temperature Coefficient of Breakdown<br>Voltage|VGE= 0V, IC= 250μA|-|0.6|-|V/oC|
|ICES<br>~~aE~~|Collector Cut-Off Current<br>~~aE~~|VCE= VCES, VGE= 0V<br>~~aE~~|-<br>~~aE~~|-<br>~~aE~~|250<br>~~aE~~|μA<br>~~aE~~|
|IGES<br>~~aE~~|G-E Leakage Current<br>~~aE~~|VGE= VGES, VCE= 0V<br>~~aE~~|-<br>~~aE~~|-<br>~~aE~~|±400<br>~~aE~~|nA<br>~~aE~~|
|**On Characteristics**<br>~~aE~~|||||||
|VGE(th)<br>~~aE~~|G-E Threshold Voltage<br>~~aE~~|IC= 250μA, VCE= VGE<br>~~aE~~|3.5<br>~~aE~~|4.5<br>~~aE~~|6.0<br>~~aE~~|V<br>~~aE~~|
|VCE(sat)<br>~~aE~~|Collector to Emitter Saturation Voltage<br>~~aE~~|IC= 60A,VGE= 15V<br>~~aE~~|-<br>~~aE~~|1.9<br>~~aE~~|2.5<br>~~aE~~|V<br>~~aE~~|
|||IC= 60A,VGE= 15V,<br>TC= 175oC<br>~~aE~~|-<br>~~aE~~|2.1<br>~~aE~~|-<br>~~aE~~|V<br>~~aE~~|
|**Dynamic Characteristics**|||||||
|Cies<br>~~_—~~|Input Capacitance<br>~~_—~~|VCE= 30V,VGE= 0V,<br>f = 1MHz<br>~~_—~~|-<br>~~_—~~|2915<br>~~_—~~|-<br>~~_—~~|pF<br>~~_—~~|
|Coes<br>~~_—~~|Output Capacitance<br>~~_—~~||-<br>~~_—~~|270<br>~~_—~~|-<br>~~_—~~|pF<br>~~_—~~|
|Cres<br>~~_—~~|Reverse Transfer Capacitance<br>~~_—~~||-<br>~~_—~~|85<br>~~_—~~|-<br>~~_—~~|pF<br>~~_—~~|
|**Switching Characteristics**<br>~~_—~~|||||||
|td(on)<br>~~_—~~|Turn-On Delay Time<br>~~_—~~|VCC= 400V, IC= 60A,<br>RG= 3Ω, VGE= 15V,<br>Inductive Load, TC= 25oC<br>~~_—~~|-<br>~~_—~~|18<br>~~_—~~|27<br>~~_—~~|ns<br>~~_—~~|
|tr<br>~~_—~~|Rise Time<br>~~_—~~||-<br>~~_—~~|47<br>~~_—~~|70<br>~~_—~~|ns<br>~~_—~~|
|td(off)<br>~~_—~~|Turn-Off Delay Time<br>~~_—~~||-<br>~~_—~~|104<br>~~_—~~|146<br>~~_—~~|ns<br>~~_—~~|
|tf|Fall Time||-|50|68|ns|
|Eon|Turn-On Switching Loss||-|1.54|2.31|mJ|
|Eoff|Turn-Off Switching Loss||-|0.45|0.60|mJ|
|Ets|Total Switching Loss||-|1.99|2.91|mJ|
|td(on)<br>~~ae~~|Turn-On Delay Time<br>~~ae~~|VCC= 400V, IC= 60A,<br>RG= 3Ω, VGE= 15V,<br>Inductive Load, TC= 175oC<br>~~EES~~|-<br>~~EES~~|18<br>~~EES~~|-<br>~~EES~~|ns<br>~~EES~~|
|tr<br>~~ae~~|Rise Time<br>~~ae~~||-<br>~~EES~~|41<br>~~EES~~|-<br>~~EES~~|ns<br>~~EES~~|
|td(off)<br>~~ae~~|Turn-Off Delay Time<br>~~ae~~||-<br>~~EES~~|115<br>~~EES~~|-<br>~~EES~~|ns<br>~~EES~~|
|tf<br>~~ae~~|Fall Time<br>~~ae~~||-<br>~~EES~~|48<br>~~EES~~|-<br>~~EES~~|ns<br>~~EES~~|
|Eon<br>~~ae~~|Turn-On Switching Loss<br>~~ae~~||-<br>~~EES~~|2.08<br>~~EES~~|-<br>~~EES~~|mJ<br>~~EES~~|
|Eoff<br>~~ae~~|Turn-Off Switching Loss<br>~~ae~~||-<br>~~EES~~|0.78<br>~~EES~~|-<br>~~EES~~|mJ<br>~~EES~~|
|Ets<br>~~ae~~|Total Switching Loss<br>~~ae~~||-<br>~~EES~~|2.86<br>~~EES~~|-<br>~~EES~~|mJ<br>~~EES~~|



**2** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

**Electrical Characteristics of the IGBT** (Continued) 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max**<br>**Unit**<br>Qg<br>Total Gate Charge<br>VCE= 400V, IC= 60A,<br>VGE= 15V<br>-<br>189<br>284<br>nC<br>Qge<br>Gate to Emitter Charge<br>-<br>20<br>30<br>nC<br>Qgc<br>Gate to Collector Charge<br>-<br>91<br>137<br>nC<br>**Electrical Characteristics of the Diode**TC= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max**<br>**Unit**<br>VFM<br>Diode Forward Voltage<br>IF= 30A<br>TC= 25oC<br>-<br>2.1<br>2.6<br>V<br>TC= 175oC<br>-<br>1.7<br>-<br>Erec<br>Reverse Recovery Energy<br>IF=30A,<br>dIF/dt = 200A/μs<br>TC= 175oC<br>-<br>127<br>-<br>uJ<br>trr<br>Diode Reverse Recovery Time<br>TC= 25oC<br>-<br>47<br>-<br>ns<br>TC= 175oC<br>-<br>212<br>-<br>Qrr<br>Diode Reverse Recovery Charge<br>TC= 25oC<br>-<br>87<br>-<br>nC<br>TC= 175oC<br>-<br>933<br>-<br>~~ae~~|
|---|



**3** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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180 180<br>TC = 25oC 15V20V 12V TC = 175 o C 20V 15V 12V<br>150 TI 10V 150 ST 7 10V<br>120 an 4a 120 Po YO<br>90 Aa 90 Uf<br>60 60 VGE = 8V<br>VGE = 8V<br>30 30<br>0 Amman 0 SFE<br>0 2 4 6 0 2 4 6<br>Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage                           Figure 4. Saturation Voltage vs. Case<br>                Characteristics                                                              Temperature at Variant Current Level<br>180 3.5<br>Common Emitter<br>Common Emitter VGE = 15V<br>150 (nae VTC GE  = 25 = 15VoC S45 3.0 — 120A<br>o<br>120 TC = 175 C<br>L-b~)) 2.5 eee<br>90<br>60A<br>PAT 2.0 6<br>60 Saee/4eee Ei Reeeeeenee<br>IC = 30A<br>1.5<br>30 TA Saanenneeeee<br>0 =e 2nnGnGe 1.0 SaGSSeeeeeEe<br>0 1 2 3 4 5 25 50 75 100 125 150 175<br>Collector-Emitter Voltage, VCE [V] Case Temperature, TC [ [o] C]<br>Figure 5. Saturation Voltage vs. VGE                          Figure 6. Saturation Voltage vs. VGE<br>20 20<br>Common Emitter Common Emitter<br>TC = 25 o C TC = 175oC<br>16128 PyPyPP 16128 FLntPHP<br>60A 120A 60A 120A<br>4 4<br>eee IC = 30A PHL<br>IC = 30A<br>0 SSS 0 SSS<br>4 8 12 16 20 4 8 12 16 20<br>Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]<br> [A]  [A]<br>C C<br>Collector Current, I Collector Current, I<br> [V]<br>CE<br> [A]<br>C<br>Collector Current, I<br>Collector-Emitter Voltage, V<br> [V]<br>CE  [V]<br>V CE<br>,<br>Collector-Emitter Voltage<br>Collector-Emitter Voltage, V<br>**----- End of picture text -----**<br>


**4** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 7. Capacitance Characteristics                        Figure 8. Gate charge Characteristics<br>7000 15<br>Common Emitter<br>Common Emitter<br>6000 VGE = 0V, f = 1MHz TC = 25 o C<br>oer TC = 25 o C 12 V<br>5000 VCC = 200V<br>300V<br>9<br>4000 400V<br>C ies<br>3000<br>6<br>SSS bee re<br>2000<br>C oes 3<br>1000 SBS Fee<br>C res<br>0 ea EN 0 Peto} tL<br>0.1 1 10 30 0 40 80 120 160 200<br>Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]<br>Figure 9. Turn-on Characteristics vs.                          Figure 9. Turn-off Characteristics vs.<br>                Gate Resistance                                                            Gate Resistance<br>100 6000<br>Common Emitter<br>80 tr VI CCC  = 60A = 400V, V GE  = 15V<br>60 1000 TC = 25 o C<br>sa [iLL TC = 175oC<br>40 Vanaeeeceae t d(off) —<br>t d(on)<br>Common Emitter<br>100<br>20 paz) VICCC = 60A = 400V, VGE = 15V |  eT tf<br>TC = 25oC<br>TC = 175oC<br>10 TIL) PPT<br>10<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]<br>Figure 11. Switching Loss vs.                                      Figure 12. Turn-on Characteristics vs.<br>                  Gate Resistance                                                            Collector Current<br>1000<br>10<br>Common Emitter<br>VGE = 15V, RG = 3 Ω<br>T C  = 25oC<br>Eon 100 T C  = 175oC t r<br>=, CE<br>1 Eoff<br>t<br>Common Emitter d(on)<br>10<br>VCC = 400V, VGE = 15V<br>I C  = 60A<br>T C  = 25oC<br>TC = 175oC<br>0.1 a“Ab-|> 1 HeePRE<br>0 10 20 30 40 50 0 30 60 90 120<br>Gate Resistance, RG [ Ω ] Collector Current, IC [A]<br> [V]<br>GE<br>Capacitance [pF] Gate-Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>Switching Loss [mJ] Switching Time [ns]<br>**----- End of picture text -----**<br>


**5** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 13. Turn-off Characteristics vs.                        Figure 14. Switching Loss vs..<br>                  Collector Current                                                           Collector Current<br>1000 10<br>Eon<br>t d(off)<br>100 1<br>Tor» tf EEE Eoff<br>10 PZeae Common Emitter e eecee 0.1 Common Emitter<br>VGE = 15V, RG = 3 Ω VGE = 15V, RG = 3 Ω<br>T C  = 25 o C   TC = 25oC<br>T C  = 175oC  TC = 175 o C<br>1 0 PP 30 60 L-} 90 120 0.01 0 4 30 IL: 60 90 120<br>Collector Current, IC [A]<br>Collector Current, IC [A]<br>Figure 15. Load Current Vs. Frequency                      Figure 16. SOA Characteristics<br>120 300<br>Vcc = 400 V<br>Load Current  100 10 μ s<br>100   : peak of square wave<br>Duty cycle : 50% 100 μ s<br>Tc = 100oC 10 ms 1ms<br>80 Power Dissipation 10 DC<br>Tc = 100oC    : 300W<br>60<br>St] 1 ESS<br>40<br>*Notes:<br>0.1<br>20    1. TC = 25 [o] C<br>   2. TJ = 175 [o] C<br>   3. Single Pulse<br>0 ase 0.01 Se<br>1k ETE 10k  CO 100k 1M 1 10 100 Si 1000<br>Switching Frequency, f [Hz] Collector-Emitter Voltage, VCE [V]<br>Figure 17. Forward Characteristics                              Figure 18. Reverse Recovery Current<br>200 14<br>100 12 T C  = 25oC<br>o TC = 175 o C<br>TC = 175 C 7 10 LF<br>o<br>TC = 125 C 8<br>o<br>TC = 75 C<br>10 6<br>TTC C  = 175 = 125o o C C  4 di/dt = 200A/uS di/dt =100A/uS<br>T C = 25 o C TTCC = 75 = 25 o oCC 2<br>1 File 0 pee===<br>0 1 2 3 4 0 10 20 30 40<br>Forward Voltage, VF [V] Forward Current, IF [A]<br>Switching Time [ns] Switching Loss [mJ]<br> [A]<br>Collector Current, IC Collector Current, I [A]c<br> [A]<br>F<br>Forward Current, I<br>Reverse Recovery Current, Irr [A]<br>**----- End of picture text -----**<br>


**6** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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Figure 19. Reverse Recovery Time                              Figure 20. Stored Charge<br>400 1400<br>T C  = 25 o C    1200 T C  = 25oC<br>300 T C  = 175oC TC = 175 o C<br>1000<br>EEE<br>Le 800 fo eee tee<br>200<br>didt = 200A/uS didt =100A/uS 600<br>50 didt =100A/uS<br>400 didt = 200A/uS<br>jj} aa<br>200<br>eee} EEEPe<br>0 0<br>0 15 30 45 60 0 10 20 30 40 50 60<br>Forward Current, IF [A] Forward Current, IF [A]<br>Figure 21.Transient Thermal Impedance of IGBT<br>0.5<br>0.5<br>0.1<br>er<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01 0.01 PDM<br>single pulse t1<br>t 2<br>Duty Factor, D = t1/t2<br>[Peak T][j][ = Pdm x Zthjc + T] C<br>1E-3<br>1E-5 1E-4 1E-3 0.01 0.1 1<br>Rectangular Pulse Duration [sec]<br> Figure 22.Transient Thermal Impedance of Diode<br>3<br>1<br>0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02 PDM<br>0.01 t 1<br>single pulse t2<br>0.01 pe Duty Factor, D = t1/t2<br>[Peak T][j] [=][ Pdm x Zthjc + T] C<br>0.005 ee eeoe||<br>1E-5 1E-4 1E-3 0.01 0.1 1<br>Rectangular Pulse Duration [sec]<br>Reverse Recovery Time, trr [ns]<br>Stored Recovery Charge, Qrr [nC]<br>Thermal Response [Zthjc]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br>


**7** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

## **Mechanical Dimensions** 

## **Figure 20.  TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003_ 

**8** 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

**9** 

©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C2 

www.fairchildsemi.com 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/FGA60N65SMD/igbt-120-a-19-v-600-w-650-to-3pn-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/on-semiconductor/fga60n65smd/igbt-650v-120a-to-3pn/dp/2825136)
---

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