# IGBT, 50 A, 2.06 V, 300 W, 1.1 kV, TO-3PL, 3 Pins

![Product image](https://novapart.co/image/farnell:3615735/)

**URL**: https://novapart.co/products/FGA50S110P./igbt-50-a-206-v-300-w-11-kv-to-3pl-3-pins
**SKU**: FGA50S110P.
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.1100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3PL |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.1kV |
| Collector Emitter Saturation Voltage | 2.06V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615735/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **FGA50S110P** 

## **1100 V, 50 A Shorted-anode IGBT** 

**==> picture [66 x 47] intentionally omitted <==**

**----- Start of picture text -----**<br>
March 2016<br>tm<br>**----- End of picture text -----**<br>


## **Features** 

- Intrinsic Anti-parallel Diode for Soft-switching Applications 

- High Switching Frequency Range 10 kHz to 50kHz 

- High Temperature Stable Behavior (Tjmax = 175[o] C) 

## **General Description** 

Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven. 

- Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A 

- Robust Pot Detection Noise Immunity 

- RoHS Compliant (Pb-free lead plating) 

## **Applications** 

- Induction Cooker, Rice-jar, and Microwave Oven 

- Soft-switching Applications 

**==> picture [469 x 376] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>G<br>TO-3PN E<br>G C E<br>Absolute Maximum Ratings<br>Symbol Description Ratings Unit<br>all<br>VCES Collector to Emitter Voltage 1100 V<br>——————— VGES Gate to Emitter Voltage OS | ± 25 eS V<br>IC Collector Current     7 @ TC = 25 [o] C 50 A<br>a Collector Current @ TC = 100 [o] C 30 A<br>ICM (1) Pulsed Collector Current                                    120 A<br>— IF — [rr] Diode Continuous Forward Current      @ TC = 25 [o] C 50 o— A<br>_—————————— Diode Continuous Forward Current @ TC = 100 [o] C 30 A<br>PD Maximum Power Dissipation          @ TC = 25 [o] C 300 W<br>Maximum Power Dissipation  @ TC = 100 [o] C 150 W<br>Ora TJ Operating Junction Temperature —————— -55 to +175 oC<br>a Tstg Storage Temperature Range a -55 to +175 |_| oC<br>| TL ee Maximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds 300 AX oC )<br>Thermal Characteristics<br>Symbol Parameter Typ. Max. Unit<br>R θ JC(IGBT) Thermal Resistance, Junction to Case, Max - 0.5 oC / W<br>R θ JA Thermal Resistance, Junction to Ambient, Max - 40 oC / W<br>**----- End of picture text -----**<br>


**Notes:** 

1: Limited by Tjmax 

**1** 

©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 

www.fairchildsemi.com 

## **Package Marking and Ordering Information** 

|**Device Marking**|**Device Marking**|**Device**|**Package**|**Package**|**Reel Size**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**|
|---|---|---|---|---|---|---|---|---|---|
|FGA50S110P||FGA50S110P|TO-3PN||-|-||30||
|**Electrical Characteristics of the IGBT**TC= 25°C unless otherwise noted||||||||||
|**Symbol**|**Parameter**|||**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Off Characteristics**||||||||||
|ICES|Collector Cut-Off Current|||VCE= 1100 V, VGE= 0 V||-|-|1|mA|
|IGES|G-E Leakage Current|||VGE= VGES, VCE= 0 V||-|-|±500|nA|
|**On Characteristics**||||||||||
|VGE(th)|G-E Threshold Voltage|||IC= 50 mA, VCE= VGE||4.5|5.6|7.5|V|
|VCE(sat)|Collector to Emitter Saturation Voltage|||IC= 50 A,VGE= 15 V<br>TC= 25oC||-|2.06|2.6|V|
|||||IC= 50 A,VGE= 15 V<br>TC= 125oC||-|2.54|-|V|
|||||IC= 50 A,VGE= 15 V,<br>TC= 175oC||-|2.7|-|V|
|VFM|Diode Forward Voltage|||IF= 50 A,TC= 25oC||-|1.96|2.6|V|
|||||IF= 50 A,TC= 175oC||-|2.67|-|V|
|**Dynamic Characteristics**||||||||||
|Cies|Input Capacitance|||VCE= 30 V,VGE= 0 V,<br>f = 1 MHz||-|2056|-|pF|
|Coes|Output Capacitance|||||-|47.8|-|pF|
|Cres|Reverse Transfer Capacitance|||||-|35.8|-|pF|
|**Switching Characteristics**||||||||||
|td(on)|Turn-On Delay Time|||VCC= 600 V, IC= 50 A,<br>RG= 10Ω, VGE= 15 V,<br>Resistive Load, TC= 25oC||-|24|-|ns|
|tr|Rise Time|||||-|294|-|ns|
|td(off)|Turn-Off Delay Time|||||-|280|-|ns|
|tf|Fall Time|||||-|95|-|ns|
|Eon|Turn-On Switching Loss|||||-|2240|-|uJ|
|Eoff|Turn-Off Switching Loss|||||-|990|-|uJ|
|Ets|Total Switching Loss|||||-|3230|-|uJ|
|td(on)|Turn-On Delay Time|||VCC= 600 V, IC= 50 A,<br>RG= 10Ω, VGE= 15 V,<br>Resistive Load,, TC= 175oC||-|24|-|ns|
|tr|Rise Time|||||-|346|-|ns|
|td(off)|Turn-Off Delay Time|||||-|308|-|ns|
|tf|Fall Time|||||-|184|-|ns|
|Eon|Turn-On Switching Loss|||||-|2640|-|uJ|
|Eoff|Turn-Off Switching Loss|||||-|1820|-|uJ|
|Ets|Total Switching Loss|||||-|4460|-|uJ|
|Qg|Total Gate Charge|||VCE= 600 V, IC= 50 A,<br>VGE= 15 V||-|195|-|nC|
|Qge|Gate to Emitter Charge|||||-|15.4|-|nC|
|Qgc|Gate to Collector Charge|||||-|99.9|-|nC|



**2** 

©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
120 120<br>TC = 25oC 17V15V T C  = 175oC 20V 15V 17V 12V<br>100 100<br>20V 12V<br>10V<br>80 80<br>10V<br>60 60<br>9V<br>9V<br>40 40<br>8V 8V<br>20 20 V GE  = 7V<br>V GE = 7V<br>0 0<br>0.0 2.0 4.0 6.0 8.0 10.0 0.0 2.0 4.0 6.0 8.0 10.0<br>Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage                             Figure 4. Transfer Characteristics<br>                Characteristics<br>120 120<br>Common Emitter Common Emitter<br>100 VTCGE = 25 = 15VoC 100 VTCCE = 25 = 20V o C<br>80 TC = 175oC 80 TC = 175 o C<br>60 60<br>40 40<br>20 20<br>0 0<br>0.0 1.0 2.0 3.0 4.0 5.0 0 3 6 9 12 15<br>Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]<br>Figure 5. Saturation Voltage vs. Case                           Figure 6. Saturation Voltage vs. VGE GE<br>                Temperature at Variant Current Level<br>4.5<br>Common Emitter 20<br>Common Emitter<br>4.0 VGE = 15 V T C  = 25 o C<br>3.5 100 A 15<br>50A<br>3.0<br>10<br>2.5 IC = 25A 100A<br>50 A<br>2.0<br>5<br>1.5 IC = 25 A<br>1.0<br>25 50 75 100 125 150 175 0 4 8 12 16 20<br>Case Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]<br> [A]  [A]<br>C C<br>Collector Current, I Collector Current, I<br> [A]<br> [A] C<br>C Collector Current, I<br>Collector Current, I<br> [V]  [V]<br>CE CE<br>V<br>,<br>Collector-Emitter Voltage, V<br>Collector-Emitter Voltage<br>**----- End of picture text -----**<br>


**Figure 3. Typical Saturation Voltage                             Figure 4. Transfer Characteristics Characteristics** 

**Figure 5. Saturation Voltage vs. Case                           Figure 6. Saturation Voltage vs. VGE GE Temperature at Variant Current Level** 

**3** 

©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**==> picture [456 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Saturation Voltage vs. VGE                            Figure 8. Capacitance Characteristics<br>20 5000<br>Common Emitter<br>TC = 175 o C<br>Cies<br>15 1000<br>50A<br>10<br>100<br>IC = 25A 100A Coes<br>5<br>Common Emitter<br>VGE = 0V, f = 1MHz Cres<br>TC = 25oC<br>0 10<br>4 8 12 16 20 1 5 10 15 20 25 30<br>Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 9. Gate charge Characteristics                          Figure 10. SOA Characteristics<br>15 150<br>Common Emitter 100<br>TC = 25 o C<br>12 10 μ s<br>VCC = 200V 600V<br>9 400V 10 100 μ s<br>10ms<br>1ms<br>6<br>DC<br>1<br>*Notes:<br>3    1. TC = 25 [o] C<br>   2. TJ = 175 [o] C<br>   3. Single Pulse<br>0 0.1<br>0 30 60 90 120 150 180 210 1 10 100 1000<br>Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]<br>Figure 11. Turn-on Characteristics vs.                         Figure 12. Turn-off Characteristics vs.<br>                  Gate Resistance                                                              Gate Resistance<br>1000 5000<br>td(on)<br>1000 t d(off)<br>100<br>tr 100 tf<br>Common Emitter Common Emitter<br>V CC  = 600V, V GE  = 15V V CC = 600V, V GE = 15V<br>IC = 50A I C  = 50A<br>TC = 25oC   TC = 25oC<br>10 TC = 175oC  10 TC = 175oC<br>7 5<br>10 20 30 40 50 60 10 20 30 40 50 60<br>Gate Resistance, RG [ Ω ] Gate Resistance, RG [ Ω ]<br> [V]<br>CE<br>Collector-Emitter Voltage, V Capacitance [pF]<br> [V]<br>GE Collector Current, I [A]c<br>Gate-Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>**----- End of picture text -----**<br>


**4** 

©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**Figure 13. Turn-on Characteristics vs.                           Figure 14. Turn-off Characteristics vs. Collector Current                                                              Collector Current** 

**==> picture [452 x 581] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>t d(off)<br>tr<br>100<br>tf<br>100<br>t<br>d(on)<br>10 Common Emitter Common Emitter<br>VGE = 15V, RG = 10 Ω VGE = 15V, RG = 10 Ω<br>T C  = 25 o C   T C = 25oC<br>T C  = 175oC  TC = 175oC<br>1 10<br>10 20 30 40 50 10 20 30 40 50<br>Collector Current, IC [A] Collector Current, IC [A]<br>Figure 15. Switching Loss vs. Gate Resistance             Figure 16. Switching Loss vs.  Collector Current<br>5000<br>10000<br>E on E on<br>1000<br>1000 E off<br>Common Emitter<br>V I C CC = 50A  = 600V, V GE  = 15V E off Common Emitter V GE  = 15V, R G  = 10 Ω<br>T C  = 25oC   T C  = 25 o C<br>TC = 175oC TC = 175oC<br>100<br>100<br>10 20 30 40 50<br>10 20 30 40 50 60<br>Gate Resistance, RG [ Ω ] Collector Current, IC [A]<br> Figure 17. Turn off Switching                                           Figure 18. Forward Characteristics<br>                   SOA Characteristics<br>200<br>100<br>100<br>10<br>10<br>1<br>Safe Operating Area T C  = 25 [o] C<br>VGE = 15V, TC = 175oC T C  = 175 [o] C<br>1<br>0.1<br>1 10 100 1000<br>0 1 2 3 4<br>Collector-Emitter Voltage, VCE [V] Forward Voltage, VF [V]<br>Switching Time [ns] Switching Time [ns]<br>Switching Loss [uJ]<br>Switching Loss [uJ]<br>Collector Current, I [A]C Forward Current, I [A]F<br>**----- End of picture text -----**<br>


**Figure 15. Switching Loss vs. Gate Resistance             Figure 16. Switching Loss vs.  Collector Current** 

**Figure 17. Turn off Switching                                           Figure 18. Forward Characteristics SOA Characteristics** 

**5** 

©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**==> picture [347 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6<br>0.5<br>0.2<br>0.1 PDM<br>0.1 0.05 t 1<br>0.02 t 2<br>0.01 Duty Factor, D = t1/t2<br>single pulse [Peak T][j][ = Pdm x Zthjc + T] C<br>0.05<br>1E-5 1E-4 1E-3 0.01 0.1 1 10 100<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br>


**6** 

©2013 Fairchild Semiconductor Corporation FGA50S110P Rev. 1.3 

www.fairchildsemi.com 

**==> picture [558 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.00<br>4.60<br>13.80<br>13.40<br>1.65 3.30<br>16.20<br>5.20 1.45 3.10<br>15.40<br>4.80<br>R0.50<br>3°<br>16.96<br>20.10 18.90<br>16.56<br>19.70 18.50 7.20<br>6.80<br>3° 4°<br>1 3<br>3.70 [2.00]<br>1.85 1.60<br>3.30<br>2.60<br>2.20 2.20 20.30<br>1.80 3.20 19.70<br>2.80<br>1.20<br>0.80<br>0.55 [M] 0.75<br>0.55<br> 5.45   5.45<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>**----- End of picture text -----**<br>


- A)  THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. 

- B)  ALL DIMENSIONS ARE IN MILLIMETERS. C)  DIMENSION AND TOLERANCING PER ASME14.5-2009. 

**==> picture [32 x 8] intentionally omitted <==**

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R0.50<br>**----- End of picture text -----**<br>


- D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. 

- E)  DRAWING FILE NAME: TO3PN03AREV2. 

- F)   FAIRCHILD SEMICONDUCTOR. 

**==> picture [99 x 45] intentionally omitted <==**

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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**1** 



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