# IGBT, 80 A, 1.4 V, 268 W, 650 V, TO-3PL, 3 Pins

![Product image](https://novapart.co/image/farnell:3615727/)

**URL**: https://novapart.co/products/FGA40S65SH/igbt-80-a-14-v-268-w-650-to-3pl-3-pins
**SKU**: FGA40S65SH
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 268W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3PL |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615727/)

## **Is Now Part of** 

## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **February 2016** 

## **FGA40S65SH** 

## **650 V, 40 A Field Stop Trench IGBT** 

## **Features** 

- Maximum Junction Temperature : TJ = 175[o] C 

- Positive Temperaure Co-efficient for Easy Parallel Operating 

- High Current Capability 

- Low Saturation Voltage: VCE(sat) = 1.4 V ( Typ.) @ IC = 40 A 

## **General Description** 

Using Fairchild’s proprietary trench design and advanced field stop IGBT technology, 650V field stop offers superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. 

- 100% of the Parts tested for ILM(1) 

- High Input Impedance 

- Tighten Parameter Distribution 

- RoHS Compliant 

## **Applications** 

- Induction Heating, MWO 

**==> picture [471 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>G<br>TO-3PN<br>G C E ‘ ra E<br>Absolute Maximum Ratings<br>a Symbol Description FGA40S65SH Unit<br>| VCES Collector to Emitter Voltage 650 V<br>VGES Gate to Emitter Voltage  20 V<br>a Transient Gate to Emitter Voltage ee 30 V<br>| [—~——!] IC Collector Current     rr @ TC = 25 [o] C ee 80 “os A<br>_————Ea. Collector Current @ TC = 100 [o] C 40 A<br>iA =| le<br>pT ILM (1) Pulsed Collector Current  @ TC = 25 [o] C 120 A<br>a ICM (2) Pulsed Collector Current                                    120 A<br>IF Diode Forward Current      @ TC = 25 [o] C 40 A<br>| Diode Forward Current @ TC = 100 [o] C 20 A<br>a—,_ IFM Pulsed Diode Maximum Forward Current                                    240 SSS A<br>PD Maximum Power Dissipation          @ TC = 25 [o] C 268 W<br>Maximum Power Dissipation  @ TC = 100 [o] C 134 W<br>_——————eEEE<br>i TJ Se Operating Junction Temperature eC -55 to +175 oC<br>| Tstg Storage Temperature Range -55 to +175 oC<br>i TL Maximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds 300 7‘ oC<br>| amit?<br>Thermal Characteristics<br>Symbol Parameter FGA40S65SH Unit<br>RJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.56 oC / W<br>RJA Thermal Resistance, Junction to Ambient, Max. 40 oC / W<br>**----- End of picture text -----**<br>


**Notes:** 

1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 35 , Inductive Load 

2. Repetitive rating: Pulse width limited by max. junction temperature 

**1** 

©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 

www.fairchildsemi.com 

|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~ee~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**|
|---|---|---|---|---|---|---|
|**Off Characteristics**<br>~~a~~<br>~~esee~~<br>~~es~~<br>~~es~~<br>~~es~~|||||||
|BVCES<br>~~a~~|Collector to Emitter Breakdown Voltage V<br>~~a~~|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 1 mA<br>~~a~~|650<br>~~a~~|-<br>~~a~~|-<br>~~a~~|V<br>~~a~~|
|BVCES<br>TJ<br>~~a~~|Temperature Coefficient of Breakdown<br>Voltage<br>~~a~~|VGE= 0 V, IC= 1mA<br>~~a~~|-<br>~~a~~|0.65<br>~~a~~|-<br>~~a~~|V/oC<br>~~a~~|
|ICES<br>~~a~~<br>~~es~~|Collector Cut-Off Current<br>~~a~~<br>~~es~~|VCE= VCES, VGE= 0 V<br>~~a~~<br>~~rs~~|-<br>~~a~~|-<br>~~a~~|250<br>~~a~~|A<br>~~a~~|
|IGES<br>~~a~~<br>~~es~~|G-E Leakage Current<br>~~a~~<br>~~es~~|VGE= VGES, VCE= 0 V<br>~~a~~<br>~~rs~~|-<br>~~a~~|-<br>~~a~~|400<br>~~a~~|nA<br>~~a~~|
|**On Characteristics**<br>~~es~~<br>~~es~~<br>~~rs~~|||||||
|VGE(th)<br>~~ee~~|G-E Threshold Voltage<br>~~ee~~|IC= 40 mA, VCE= VGE<br>~~eee~~|4.0<br>~~eee ee~~|5.3<br>~~ee~~|7.5<br>~~ee~~|V<br>~~ee~~|
|VCE(sat)<br>~~ee~~|Collector to Emitter Saturation Voltage<br>~~ee~~|IC= 40 A,VGE= 15 V<br>~~eee~~|-<br>~~eee ee~~|1.40<br>~~ee~~|1.81<br>~~ee~~|V<br>~~ee~~|
|||IC= 40 A,VGE= 15 V,<br>TC= 175oC<br>~~eee~~|-<br>~~eee ee~~|1.65<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|VFM<br>~~ee~~<br>~~a~~|Diode Forward Voltage<br>~~ee ~~<br>~~a~~|IF= 20 A,TC= 25oC<br> ~~eee~~<br>~~a~~|-<br>~~eee ee~~<br>~~a~~|1.45<br>~~ee~~<br>~~a~~|1.95<br>~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|
|||IF= 20 A,TC= 175oC<br>~~a~~|-<br>~~a~~|1.65<br>~~a~~|-<br>~~a~~|V<br>~~a~~|
|**Dynamic Characteristics**<br>~~a~~|||||||
|Cies<br>~~a~~|Input Capacitance<br>~~a~~|VCE= 30 V,VGE= 0 V,<br>f = 1 MHz<br>~~a~~|-<br>~~a~~|2012<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|
|Coes<br>~~a~~|Output Capacitance<br>~~a~~||-<br>~~a~~|49<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|
|Cres<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~||-<br>~~a~~|26<br>~~a~~|-<br>~~a~~|pF<br>~~a~~|
|**Switching Characteristics**<br>~~a~~|||||||
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,<br>RG= 6, VGE= 15 V,<br>Resistive Load, TC= 25oC|-|19.2|-|ns|
|Tr|Rise Time||-|65.6|-|ns|
|Td(off)|Turn-Off Delay Time||-|68.8|-|ns|
|Tf|Fall Time||-|96.8|-|ns|
|Eon|Turn-On Switching Loss||-|194|-|uJ|
|Eoff|Turn-Off Switching Loss||-|388|-|uJ|
|Ets|Total Switching Loss||-|592|-|uJ|
|Td(on)|Turn-On Delay Time|VCC= 400 V, IC= 40 A,<br>RG= 6, VGE= 15 V,<br>ResistiveLoad, TC= 175oC|-|19.2|-|ns|
|Tr|Rise Time||-|87.2|-|ns|
|Td(off)|Turn-Off Delay Time||-|75.2|-|ns|
|Tf|Fall Time||-|158|-|ns|
|Eon|Turn-On Switching Loss||-|292|-|uJ|
|Eoff|Turn-Off Switching Loss||-|633|-|uJ|
|Ets|Total Switching Loss||-|925|-|uJ|
|Qg<br>~~——————~~|Total Gate Charge<br>~~——————~~|VCE= 400 V, IC= 40 A,<br>VGE= 15 V<br>~~——————~~|-<br>~~——————~~|73<br>~~——————~~|-<br>~~——————~~|nC<br>~~——————~~|
|Qge<br>~~——————~~|Gate to Emitter Charge<br>~~——————~~||-<br>~~——————~~|13<br>~~——————~~|-<br>~~——————~~|nC<br>~~——————~~|
|Qgc<br>~~——————~~|Gate to Collector Charge<br>~~——————~~||-<br>~~——————~~|28<br>~~——————~~|-<br>~~——————~~|nC<br>~~——————~~|



**2** 

©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**==> picture [453 x 590] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 TC = 25oC 20V 15V 120 TC = 175oC 20V 15V<br>12V 12V<br>10V<br>90 PTF 10V 90<br>| YA<br>60 60 VGE = 8V<br>VGE = 8V<br>30 30<br>0 Wr 0 LACE<br>0 1 2 3 4 5 0 1 2 3 4 5<br>Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage                      Figure 4. Saturation Voltage vs. Case<br>                Characteristics                                                         Temperature at Variant Current Level<br>3<br>120 Common Emitter<br>Common Emitter VGE = 15V<br>V GE  = 15V<br>90 TTCC = 25 = 175oCoC<br>7<br>80A<br>60 ey 2<br>40A<br>30 PLE<br>IC = 20A<br>0 Gane 1<br>-100 -50 0 50 100 150 200<br>0 1 2 3 4<br>Collector-Emitter Voltage, VCE [V] Collector-Emitter Case Temperature, TC [ [o] C]<br>Figure 5. Saturation Voltage vs. VGE                            Figure 6. Saturation Voltage vs. VGE<br>20 20<br>Common Emitter Common Emitter<br>TC = 25 o C TC = 175 o C<br>16 16<br>2 iy Ed<br>12 i 12 Wy<br>40A<br>IC = 20A<br>8 8<br>| IC = 20A 80A eee oe 40A<br>80A<br>4 4<br>| eeee WE<br>0 OS — 0<br>4 8 12 16 20 4 8 12 16 20<br>Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]<br>Collector Current, I [A]C Collector Current, I [A]C<br> [V]<br>CE<br> [A]<br>C<br>Collector Current, I<br>Collector-Emitter Voltage, V<br> [V]<br>CE  [V]<br>V,  CE<br>Collector-Emitter Voltage Collector-Emitter Voltage, V<br>**----- End of picture text -----**<br>


**3** 

©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**==> picture [445 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Capacitance Characteristics                        Figure 8. Gate charge Characteristics<br>10000 15<br>Common Emitter<br>TC = 25 o C<br>C ies 12<br>300V<br>1000 9 VCC = 200V 400V<br>Coes<br>6<br>100<br>Common Emitter Cres 3<br>V GE  = 0V, f = 1MHz<br>TC = 25 o C<br>10 0<br>1 10 30 0 20 40 60 80<br>Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]<br>Figure 9. Turn-on Characteristics vs.                         Figure 10. Turn-off Characteristics vs.<br>                Gate Resistance                                                              Gate Resistance<br>1000 1000<br>Common Emitter<br>V CC  = 400V, V GE  = 15V<br>ITC C  = 40A = 25 o C    td(off)<br>T C  = 175 o C<br>tr tf<br>100 100<br>t d(on) Common Emitter<br>VCC = 400V, VGE = 15V<br>IC = 40A<br>TC = 25 o C<br>TC = 175oC<br>10 ert 10 FL]<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Gate Resistance, RG [  ] Gate Resistance, RG [  ]<br>Figure 11. Switching Loss vs.                                     Figure 12. Turn-on Characteristics vs.<br>                        Gate Resistance                                                                                Collector Current<br>1000 400<br>E off 100 TILE tr<br>Eon<br>t<br>d(on)<br>Common Emitter 10<br>VCC = 400V, VGE = 15V Common Emitter<br>100 IC = 40A V GE  = 15V, R G  = 6 <br>T C  = 25 o C   T C  = 25oC<br>T C  = 175 o C TC = 175oC<br>50 see} 1 OLLI<br>0 10 20 30 40 50 20 30 40 50 60 70 80<br>Gate Resistance, RG [  ] Collector Current, IC [A]<br> [V]<br>GE<br>Capacitance [pF] Gate-Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>Switching Loss [uJ] Switching Time [ns]<br>**----- End of picture text -----**<br>


**4** 

©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 

www.fairchildsemi.com 

**==> picture [462 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
Typical Performance Characteristics<br>Figure 13. Turn-off Characteristics vs.                       Figure 14. Switching Loss vs.<br>                  Collector Current                                                          Collector Current<br>500 5000<br>100 tf 1000<br>co Eoff<br>t d(off)<br>as E on —<br>Common Emitter Common E mitter<br>VGE = 15V, RG = 6  VGE = 15V, RG = 6 <br>T C  = 25oC    100 T C  = 25oC<br>TC = 175oC T C  = 175oC<br>10 FUE] 50 AES<br>20 30 40 50 60 70 80 20 30 40 50 60 70 80<br>Collector Current, IC [A] Collector Current, IC [A]<br>Figure 15. Load Current Vs. Frequency                      Figure 16. SOA Characteristics<br>300<br>250<br>Square Wave<br>TJ <= 175 o C, D = 0.5, VCE = 400V 100<br>200 V GE  = 15/0V, R G  = 6  10  s<br>150 = TC = 25oC 10 Snail 1ms 100  s<br>10 ms<br>TC = 75 o C DC<br>100<br>50 TC = 100 o C 1 *   1. TNotes:C = 25 [o] C<br>CH mS<br>   2. T J  = 175 [o] C<br>   3. Single Pulse<br>0.1<br>0<br>1 10 100 1000<br>1k 10k 100k 1M<br>TSS Switching Frequency, f[Hz] Collector-Emitter Voltage, V = CE [V]<br>Figure 17. Transient Thermal Impedance of IGBT<br>0.6<br>0.5<br>0.2<br>0.1<br>SS, 0.1<br>0.05<br>PDM<br>0.02<br>0.01 t 1 t2<br>0.01 Duty Factor, D = t1/t2<br>single pulse<br>[Peak T][j][ = Pdm x Zth][j][c + T] C<br>0.005<br>FL -5 -4 | -3 antlee -2 SH -1<br>10 10 10 10 10<br>Rectangular Pulse Duration [sec]<br>Switching Time [ns] Switching Loss [uJ]<br> [A]c<br>Collector Current, [A]<br>Collector Current, I<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br>


**5** 

©2016 Fairchild Semiconductor Corporation FGA40S65SH Rev. 1.1 

www.fairchildsemi.com 

**==> picture [558 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.00<br>4.60<br>13.80<br>13.40<br>1.65 3.30<br>16.20<br>5.20 1.45 3.10<br>15.40<br>4.80<br>R0.50<br>3°<br>16.96<br>20.10 18.90<br>16.56<br>19.70 18.50 7.20<br>6.80<br>3° 4°<br>1 3<br>3.70 [2.00]<br>1.85 1.60<br>3.30<br>2.60<br>2.20 2.20 20.30<br>1.80 3.20 19.70<br>2.80<br>1.20<br>0.80<br>0.55 [M] 0.75<br>0.55<br> 5.45   5.45<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>**----- End of picture text -----**<br>


- A)  THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. 

- B)  ALL DIMENSIONS ARE IN MILLIMETERS. C)  DIMENSION AND TOLERANCING PER ASME14.5-2009. 

**==> picture [32 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
R0.50<br>**----- End of picture text -----**<br>


- D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. 

- E)  DRAWING FILE NAME: TO3PN03AREV2. 

- F)   FAIRCHILD SEMICONDUCTOR. 

**==> picture [99 x 45] intentionally omitted <==**

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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