# IGBT, 25 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 Pins

![Product image](https://novapart.co/image/farnell:1095025/)

**URL**: https://novapart.co/products/FGA25N120ANTDTU/igbt-25-a-v-312-w-12-kv-to-3p-3-pins
**SKU**: FGA25N120ANTDTU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.5600
**Stock**: 10+

## Description

DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:312W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3P; No. of Pins:3Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (17-Jan-2022) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 312W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3P |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 25A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1095025/)

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## **FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT** 

## **Features** 

- NPT Trench Technology, Positive Temperature Coefficient 

- Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C 

- Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C 

- Extremely Enhanced Avalanche Capability 

## **Description** 

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. 

## **Applications** 

- Induction Heating, Microwave Oven 

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TO-3P<br>G C E<br>**----- End of picture text -----**<br>


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## **Absolute Maximum Ratings** 

|**Symbol**|**Description**|**Description**|**Ratings**|**Unit**|
|---|---|---|---|---|
|VCES<br>~~DG~~<br>~~a~~|Collector-Emitter Voltage<br>~~DG~~<br>~~—~~||1200<br>~~DG~~<br>~~—ke§O~~|V<br>~~DG~~<br>~~SC~~|
|VGES<br>~~a~~|Gate-Emitter Voltage<br>~~—~~|| 20<br>~~—ke§O~~<br>~~_~~<br>~~EEC~~|V<br>~~SC~~<br>~~EEC~~|
|IC<br>~~a~~|Collector Current<br>~~iT~~|@ TC=   25C<br>~~—~~<br>~~iT~~|50<br>~~— ke§O~~<br>~~iT~~<br>~~_~~<br>~~EEC~~|A<br>~~SC~~<br>~~iT~~<br>~~EEC~~|
||Collector Current<br>~~Ge~~|@ TC= 100C<br>~~Ge~~|25<br>~~_~~<br>~~EEC~~<br>~~Ge~~|A<br>~~EEC~~<br>~~Ge~~|
|ICM(1)<br>~~a eG~~|Pulsed Collector Current<br>~~eG~~<br>~~i“CC~~<br>~~LL~~||90<br>~~eG~~<br>~~LL _lLLLC~~|A<br>~~eG~~|
|IF<br>~~OT~~|Diode Continuous Forward Current<br>~~i“CC~~|@ TC= 25C<br>~~CC~~<br>~~LL~~|50<br>~~LL _lLLLC~~|A|
||Diode Continuous Forward Current<br>~~i“ CC~~<br>~~eG~~<br>~~T~~|@ TC= 100C<br>~~CC~~<br>~~LL~~<br>~~eG~~<br>~~4|~~|25<br>~~LL _lLLLC~~<br>~~eG~~<br>~~|~~<br>~~Aaa~~|A<br>~~eG~~<br>~~Aaa~~<br>~~ll~~|
|IFM<br>~~OT~~|Diode Maximum Forward Current<br>~~T~~<br>~~4|~~||150<br>~~|~~<br>~~Aaa~~|A<br>~~Aaa~~<br>~~ll~~|
|PD<br>~~OT~~<br>~~be~~<br>~~=-~~|Maximum Power Dissipation<br>~~T~~<br>~~eG~~<br>~~be~~|@ TC=   25C<br>~~4 |~~<br>~~eG~~<br>~~i$~~|312<br>~~|~~<br>~~Aaa~~<br>~~eG~~<br>~~i$~~<br>~~————aa~~|W<br>~~Aaa~~<br>~~ll~~<br>~~eG~~<br>~~————aa~~<br>~~|~~|
||Maximum Power Dissipation<br>~~|~~<br>~~be~~<br>~~==~~<br>~~ee~~<br>~~=-~~|@ TC= 100C<br>~~|~~<br>~~i$~~<br>~~ee O—Eee~~|125<br>~~|~~<br>~~i$~~<br>~~————aa~~<br>~~O—Eee~~|W<br>~~|~~<br>~~————aa~~<br>~~|~~<br>~~O—Eee~~|
|TJ<br>~~be~~<br>~~=-~~|Operating Junction Temperature<br>~~i$~~<br>~~be~~<br>~~==~~<br>~~ee~~<br>~~ee O—Eee~~<br>~~=-~~<br>~~|~~||-55 to +150<br>~~i$~~<br>~~————aa~~<br>~~O—Eee~~<br>~~.....}.»z£-~~|C<br>~~————aa~~<br>~~|~~<br>~~O—Eee~~<br>~~.}.»z£-eo.~~|
|Tstg<br>~~be~~<br>~~=-~~|Storage Temperature Range<br>~~i$~~<br>~~be~~<br>~~==~~<br>~~ee~~<br>~~ee O—Eee~~<br>~~=-~~<br>~~|~~||-55 to +150<br>~~i$~~<br>~~————aa~~<br>~~O—Eee~~<br>~~.....}.»z£-~~|C<br>~~————aa~~<br>~~|~~<br>~~O—Eee~~<br>~~.}.»z£-eo.~~|
|TL<br>~~=-~~|Maximum Lead Temp. for soldering<br>Purposes, 1/8” from case for 5 seconds<br>~~==~~<br>~~ee~~<br>~~ee  O—Eee~~<br>~~=-~~<br>~~|~~||300<br>~~O—Eee~~<br>~~. . . . .}.»z£-~~|C<br>~~O—Eee~~<br>~~.}.»z£- eo.~~|



## **Notes:** 

(1) Repetitive rating: Pulse width limited by max. junction temperature 

## **Thermal Characteristics** 

**1** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

## **Package Marking and Ordering Information** 

|**Symbol**<br>~~es~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~es~~<br>~~re~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|
|**Off Characteristics**<br>~~es~~<br>~~re~~<br>~~———————~~|||||||
|ICES<br>~~———————~~|Collector Cut-Off Current<br>~~———————~~|VCE= VCES, VGE= 0 V<br>~~———————~~|--<br>~~———————~~|--<br>~~———————~~|3<br>~~———————~~|mA<br>~~———————~~|
|IGES<br>~~———————~~|G-E Leakage Current<br>~~———————~~|VGE= VGES, VCE= 0 V<br>~~———————~~|--<br>~~———————~~|--<br>~~———————~~|± 250<br>~~———————~~|nA<br>~~———————~~|
|**On Characteristics**|||||||
|VGE(th)|G-E Threshold Voltage|IC= 25 mA, VCE= VGE|3.5|5.5|7.5|V|
|VCE(sat)<br>|<br>~~——~~|Collector to Emitter<br>Saturation Voltage<br>~~rr~~<br>~~——yy~~|IC= 25 A,VGE= 15 V<br>~~rr~~|--<br>~~rr~~|2.0<br>~~rr~~|--<br>~~rr~~|V<br>~~rr~~|
|||IC= 25 A,VGE= 15 V,<br>TC= 125C<br>~~rr~~|--<br>~~rr~~|2.15<br>~~rr~~|--<br>~~rr~~|V<br>~~rr~~|
|||IC= 50 A,VGE= 15 V<br>~~rr~~|--<br>~~rr~~|2.65<br>~~rr~~|--<br>~~rr~~|V<br>~~rr~~|
|**Dynamic Characteristics**<br>~~——yy~~<br>~~lO~~|||||||
|Cies<br>~~——~~<br>~~a~~|Input Capacitance<br>~~—— yy~~<br>~~a~~|VCE= 30 V,VGE= 0 V,<br>f = 1 MHz<br>~~a~~|--<br>~~a~~|3700<br>~~a~~|--<br>~~a~~|pF<br>~~a~~|
|Coes<br>~~a~~|Output Capacitance<br>~~a~~||--<br>~~a~~|130<br>~~a~~|--<br>~~a~~|pF<br>~~a~~|
|Cres<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~||--<br>~~a~~|80<br>~~a~~|--<br>~~a~~|pF<br>~~a~~|
|**Switching Characteristics**|||||||
|td(on)|Turn-On Delay Time|VCC= 600 V, IC= 25 A,<br>RG= 10, VGE= 15 V,<br>Inductive Load, TC= 25C|--|50|--|ns|
|tr|Rise Time||--|60|--|ns|
|td(off)|Turn-Off Delay Time||--|190|--|ns|
|tf|Fall Time||--|100|--|ns|
|Eon|Turn-On Switching Loss||--|4.1|--|mJ|
|Eoff|Turn-Off Switching Loss||--|0.96|--|mJ|
|Ets|Total Switching Loss||--|5.06|--|mJ|
|td(on)|Turn-On Delay Time|VCC= 600 V, IC= 25 A,<br>RG= 10, VGE= 15 V,<br>Inductive Load, TC= 125C|--|50|--|ns|
|tr|Rise Time||--|60|--|ns|
|td(off)|Turn-Off Delay Time||--|200|--|ns|
|tf|Fall Time||--|154|--|ns|
|Eon|Turn-On Switching Loss||--|4.3|--|mJ|
|Eoff|Turn-Off Switching Loss||--|1.5|--|mJ|
|Ets|Total Switching Loss||--|5.8|--|mJ|
|Qg|Total Gate Charge|VCE= 600 V, IC= 25 A,<br>VGE= 15 V|--|200|--|nC|
|Qge|Gate-Emitter Charge||--|15|--|nC|
|Qgc|Gate-Collector Charge||--|100|--|nC|



**2** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

**Electrical Characteristics of DIODE** TC = 25°C unless otherwise noted 

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|||||||||
|---|---|---|---|---|---|---|---|
|Symbol|Parameter|Test Conditions|Min.|Typ.|Max.|Unit|
|VFM|Diode Forward Voltage|IF = 25 A|TC =   25C|--|2.0|3.0|V|
|TC = 125C|--|2.1|--|
|trr|Diode Reverse Recovery Time|IF = 25 A|TC =   25C|--|235|350|ns|
|diF/dt = 200 A/s|TC = 125C|--|300|--|
|Irr|Diode Peak Reverse Recovery Cur-|TC =   25C|--|27|40|A|
|rent|TC = 125C|--|31|--|
|Qrr|Diode Reverse Recovery Charge|TC =   25C|--|3130|4700|nC|
|TC = 125C|--|4650|--|

**----- End of picture text -----**<br>


**3** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

## **Typical Performance Characteristics** 

**Figure 1. Typical Output Characteristics** 

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180 TC = 25C 20V 15V 12V<br>160 17V<br>10V<br>140<br>120<br>9V<br>100<br>80<br>60 8V<br>40<br>7V<br>20<br>V GE  = 6V<br>0 E<br>0 2 4 6 8 10<br>Collector-Emitter Voltage, VCE [V]<br>Figure 3. Saturation Voltage vs. Case<br>Temperature at Variant Current Level<br>3.0<br>Common Emitter<br>VGE = 15V<br>2.5<br>40A<br>2.0 IC = 25A<br>1.5 =<br>25 50 75 100 125<br>Case Temperature, TC [C]<br>Figure 5. Saturation Voltage vs. VGE<br>20<br>Common Emitter<br>T C  = 25  C<br>16<br>12<br>8<br>40A<br>25A<br>4<br>IC = 12.5A<br>0<br>0 4 8 12 16 20<br>Gate-Emitter Voltage, VGE [V]<br>Collector Current, I [A]C<br> [V]<br>CE<br>Collector-Emitter Voltage, V<br> [V]<br>CE<br>Collector-Emitter Voltage, V<br>**----- End of picture text -----**<br>


**Figure 5. Saturation Voltage vs. VGE** 

**Figure 2. Typical Saturation Voltage Characteristics** 

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120<br>Common Emitter<br>100 VTCGE =   25 = 15VC<br>T C  = 125C<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>Collector-Emitter Voltage, VCE [V]<br>Collector Current, I [A]C<br>**----- End of picture text -----**<br>


**Figure 4. Saturation Voltage vs. VGE** 

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20<br>Common Emitter<br>T C  = -40  C<br>16<br>12<br>8<br>40A<br>4 25A<br>IC = 12.5A<br>0<br>0 4 8 12 16 20<br>Gate-Emitter Voltage, VGE [V]<br>       Figure 6. Saturation Voltage vs. VGEGE<br>20<br>Common Emitter<br>TC = 125  C<br>16<br>12<br>8<br>40A<br>25A<br>4<br>I C  = 12.5A<br>0<br>0 4 8 12 16 20<br>Gate-Emitter Voltage, VGE [V]<br> [V]<br>CE<br>Collector-Emitter Voltage, V<br> [V]<br>CE<br>Collector-Emitter Voltage, V<br>**----- End of picture text -----**<br>


**Figure 6. Saturation Voltage vs. VGEGE** 

**4** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

## **Typical Performance Characteristics  (Continued)** 

**Figure 7. Capacitance Characteristics** 

**Figure 8. Turn-On Characteristics vs. Gate Resistance** 

**==> picture [444 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
5000<br>Common Emitter<br>45004000 Ciss VT CGE  = 25 = 0V, f = 1MHzC<br>100<br>3500<br>3000 tr<br>2500<br>2000 td(on)<br>1500 Common Emitter<br>VCC = 600V, VGE = 15V<br>1000500 CossCrss ITTCCC = 25A = 25 = 125C   C<br>0 10<br>1 Se 10 = 0 10 20 30 40 = 50 60 70<br>Collector-Emitter Voltage, VCE [V] Gate Resistance, RG []<br>Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance<br>Gate Resistance<br>1000<br>Common Emitter<br>V CC  = 600V, V GE = 15V<br>IC = 25A<br>td(off) 10 T C = 25C<br>T C  = 125C  Eon<br>100<br>tf<br>Common Emitter<br>VCC = 600V, VGE = 15V Eoff<br>I T CC = 25A  = 25C   1<br>TC = 125C<br>10<br>0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70<br>Gate Resistance, RG [] Gate Resistance, RG []<br>Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.<br>Collector Current  Collector Current<br>Common Emitter<br>VGE = 15V, RG = 10<br>TC = 25C<br>TC = 125C  td(off)<br>tr<br>100<br>100<br>tf<br>td(on)<br>Common Emitter<br>VGE = 15V, RG = 10<br>T C  = 25C<br>TC = 125C<br>10 20 30 40 50 10 20 30 40 50<br>Collector Current, IC [A] Collector Current, IC [A]<br>Capacitance [pF]<br>Switching Time [ns]<br>Switching Time [ns] Switching Loss [mJ]<br>Switching Time [ns] Switching Time [ns]<br>**----- End of picture text -----**<br>


**Figure 9. Turn-Off Characteristics vs. Gate Resistance** 

**Figure 10. Switching Loss vs. Gate Resistance** 

**5** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

## **Typical Performance Characteristics  (Continued)** 

## **Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics** 

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16<br>Common Emitter Common Emitter<br>10 VT C GE= =  2515V, RC    G = 10 Eon 14 | R T C L  = 24  = 25  C<br>TC = 125C  12 Vcc = 200V 600V<br>10 400V<br>Eoff<br>8<br>1<br>6<br>4<br>2<br>0.1 0<br>10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200<br>Collector Current, IC [A] Gate Charge, Qg [nC]<br>Figure 15. SOA Characteristics Figure 16. Turn-Off SOA<br>100<br>100 Ic MAX (Pulsed)<br>50s<br>Ic MAX (Continuous)<br>100s<br>10<br>1ms<br>DC Operation<br>10<br>1<br>Single Nonrepetitive<br>0.1 Pulse TC = 25C<br>Curves must be derated<br>linearly with increase Safe Operating Area<br>0.01 i n temperature 1 VGE = 15V, TC = 125C<br>0.1 1 10 100 1000 1 10 100 1000<br>Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]<br>Figure 17. Transient Thermal Impedance of IGBT<br>10<br>]<br>oO= cjht 1<br>N Z[ :<br>°n es 0.5 Z [:]<br>5 no 0.1 0.2<br>xQ& pseRl 0.050.1 P 4Y dm<br>OoE® amre 0.01 0.02 —“~ 1 t1 t2 1<br>cc h 0.01 —_——,<br>£ T Duty factor D = t1 / t2<br>single pulse Peak Tj = Pdm  Zthjc + T C<br>1E-3<br>-5 1E-4 1E-3 0.01 04 1 10<br>gular P uration ]<br> [V]<br>GE<br>Switching Loss [mJ] Gate-Emitter Voltage, V<br> [A]C<br>Collector Current, Ic [A] Collector Current, I<br>10<br>1<br>0.1<br>0.01<br>1E-3<br>1E-5 1E-4 1E-3 0.01 0.1 1 10<br>RectangularPulseDuration[sec]<br>**----- End of picture text -----**<br>


## **Figure 15. SOA Characteristics** 

**6** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

**Typical Performance Characteristics  (Continued)** 

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Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current<br>50 30<br>25 diF/dt = 200A/s<br>10<br>20<br>T J  = 125C<br>15<br>diF/dt = 100A/s<br>1 TJ = 25C 10<br>5<br>T C  = 125C<br>TC =  25C<br>0.1 0<br>0.0 0.4 0.8 1.2 1.6 2.0 5 10 15 20 25<br>Forward Voltage , VF [V] Forward Current , IF [A]<br>Figure 20. Stored Charge Figure 21. Reverse Recovery Time<br>4000<br>300<br>diF/dt = 100A/s<br>3000<br>diF/dt = 200A/s<br>200<br>2000 diF/dt = 200A/s<br>diF/dt = 100A/s<br>100<br>1000<br>0 0<br>5 10 15 20 25 5 10 15 20 25<br>Forward Current , IF [A] Forward Current , IF [A]<br>Forward Current , I [A]F  [A]rr<br>Reverse Recovery Currnet , I<br> [nC]rr<br> [ns]<br>rr<br>Stored Recovery Charge , Q<br>Reverse Recovery Time , t<br>**----- End of picture text -----**<br>


**7** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 

## **Mechanical Dimensions** 

## **Figure 22.  TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003_ 

**8** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

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## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

**9** 

©2006 Fairchild Semiconductor Corporation FGA25N120ANTD Rev. C1 

www.fairchildsemi.com 



## Links

- [View this product on Novapart](https://novapart.co/products/FGA25N120ANTDTU/igbt-25-a-v-312-w-12-kv-to-3p-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/onsemi/fga25n120antdtu/igbt-npt-1-2kv-25a-to-3p/dp/1095025)
---

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