# IGBT, NPT Trench, 50 A, 2.65 V, 312 W, 1.2 kV, TO-3PN, 3 Pins ![Product image](https://novapart.co/image/farnell:3368674/) **URL**: https://novapart.co/products/FGA25N120ANTDTU-F109/igbt-npt-trench-50-a-265-v-312-w-12-kv-to-3pn-3 **SKU**: FGA25N120ANTDTU-F109 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.9100 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Product Range | - | | Power Dissipation | 312W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-3PN | | Operating Temperature Max | 150°C | | Continuous Collector Current | 50A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 2.65V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368674/) **==> picture [214 x 37] intentionally omitted <==** **----- Start of picture text -----**
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
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## **Features** ## **Description** **==> picture [447 x 64] intentionally omitted <==** **----- Start of picture text -----**
• NPT Trench Technology, Positive Temperature Coefficient
Using ON Semiconductor's proprietary trench design and
• Low Saturation Voltage: VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers
@ IC = 25 A and TC = 25°C superior conduction and switching performances, high
• Low Switching Loss: E@ IC = 25 A and TC = 25off, typ°C = 0.96 mJ avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
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- Extremely Enhanced Avalanche Capability ## **Applications** **==> picture [468 x 342] intentionally omitted <==** **----- Start of picture text -----**
• Induction Heating, Microwave Oven
C
G
TO-3P
G C E E
Absolute Maximum Ratings
Symbol Description Ratings Unit
a
VCES Collector-Emitter Voltage 1200 V
ee I I
a VGES nD Gate-Emitter Voltage rt ± 20 V
Collector Current @ TC = 25°C 50 A
IC Collector Current @ TC = 100°C 25 A
ooo
a ICM (1) anD Pulsed Collector Current Gn tn t 90 A
Diode Continuous Forward Current @ TC = 25°C 50 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
ooo
a IFM anD Diode Maximum Forward Current Gn tt 150 A
Maximum Power Dissipation @ TC = 25°C 312 W
es PD ts Maximum Power Dissipation @ TC = 100°C nt 125 ee W
a TJ Operating Junction Temperature Gy GR -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
ee ny tt
TL Maximum Lead Temp. for solderingPurposes, 1/8” from case for 5 seconds 300 °C
a eees
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
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## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---| |RθJC(IGBT)|Thermal Resistance, Junction-to-Case|--|0.4|°C/W| |RθJC(DIODE)|Thermal Resistance, Junction-to-Case|--|2.0|°C/W| |RθJA|Thermal Resistance, Junction-to-Ambient|--|40|°C/W| Publication Order Number: FGA25N120ANTDTU/D ©2006 Semiconductor Components Industries, LLC. October-2017,Rev.3 ## **Package Marking and Ordering Information** |**Part Number**|**Top Mark**|**Package**|**Packing**
**Method**|**Reel Size **|**Tape Width **|**Quantity**| |---|---|---|---|---|---|---| |FGA25N120ANTDTU-F109|FGA25N120ANTDTU|TO-3PN|Tube|N/A|N/A|30| ## **Electrical Characteristics of the IGBT** TC = 25°C unless otherwise noted |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**Off Characteristics**||||||| |ICES|Collector Cut-Off Current|VCE= VCES, VGE= 0 V|--|--|3|mA| |IGES|G-E Leakage Current|VGE= VGES, VCE= 0 V|--|--|± 250|nA| |**On Characteristics**||||||| |VGE(th)|G-E Threshold Voltage|IC= 25 mA, VCE= VGE|3.5|5.5|7.5|V| |VCE(sat)|Collector to Emitter
Saturation Voltage|IC= 25 A,VGE= 15 V|--|2.0|--|V| |||IC= 25 A,VGE= 15 V,
TC= 125°C|--|2.15|--|V| |||IC= 50 A,VGE= 15 V|--|2.65|--|V| |**Dynamic Characteristics**||||||| |Cies|Input Capacitance|VCE= 30 V,VGE= 0 V,
f = 1 MHz|--|3700|--|pF| |Coes|Output Capacitance||--|130|--|pF| |Cres|Reverse Transfer Capacitance||--|80|--|pF| |**Switching Characteristics**||||||| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 25 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 25°C|--|50|--|ns| |tr|Rise Time||--|60|--|ns| |td(off)|Turn-Off Delay Time||--|190|--|ns| |tf|Fall Time||--|100|--|ns| |Eon|Turn-On Switching Loss||--|4.1|--|mJ| |Eoff|Turn-Off Switching Loss||--|0.96|--|mJ| |Ets|Total Switching Loss||--|5.06|--|mJ| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 25 A,
RG= 10Ω, VGE= 15 V,
Inductive Load, TC= 125°C|--|50|--|ns| |tr|Rise Time||--|60|--|ns| |td(off)|Turn-Off Delay Time||--|200|--|ns| |tf|Fall Time||--|154|--|ns| |Eon|Turn-On Switching Loss||--|4.3|--|mJ| |Eoff|Turn-Off Switching Loss||--|1.5|--|mJ| |Ets|Total Switching Loss||--|5.8|--|mJ| |Qg|Total Gate Charge|VCE= 600 V, IC= 25 A,
VGE= 15 V|--|200|--|nC| |Qge|Gate-Emitter Charge||--|15|--|nC| |Qgc|Gate-Collector Charge||--|100|--|nC| |||||||| www.onsemi.com 2 |**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted|**Electrical Characteristics of DIODE**TC= 25°C unless otherwise noted| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**| |VFM|Diode Forward Voltage|IF= 25 A|TC= 25°C|--|2.0|3.0|V| ||||TC= 125°C|--|2.1|--|| |trr|Diode Reverse Recovery Time||TC= 25°C|--|235|350|ns| ||||T = 125°C|--|300|--|| |||IF= 25 A
diF/dt = 200 A/μs|C||||| |Irr|Diode Peak Reverse Recovery Cur-
rent||TC= 25°C|--|27|40|A| ||||TC= 125°C|--|31|--|| |Qrr|Diode Reverse Recovery Charge||TC= 25°C|--|3130|4700|nC| ||||TC= 125°C|--|4650|--|| ||||||||| www.onsemi.com 3 ## **Typical Performance Characteristics** ## **Figure 1. Typical Output Characteristics** **==> picture [221 x 176] intentionally omitted <==** **----- Start of picture text -----**
180 TC = 25°C 20V 15V 12V
160 17V
10V
140
120
9V
100
80
60 8V
40
7V
20
V GE = 6V
0
0 2 4 6 8 10
Collector-Emitter Voltage, VCE [V]
Collector Current, I [A]C
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**Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level** **==> picture [219 x 176] intentionally omitted <==** **----- Start of picture text -----**
3.0
Common Emitter
VGE = 15V
2.5
40A
2.0 IC = 25A
1.5
25 50 75 100 125
Case Temperature, TC [°C]
[V]
CE
Collector-Emitter Voltage, V
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**Figure 5. Saturation Voltage vs. VGE** **==> picture [180 x 154] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
T C = 25 ° C
16
12
8
40A
25A
4
IC = 12.5A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
[V]
CE
Collector-Emitter Voltage, V
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## **Figure 2. Typical Saturation Voltage Characteristics** **==> picture [221 x 177] intentionally omitted <==** **----- Start of picture text -----**
120
Common Emitter
100 VTCGE = 25 = 15V°C
T C = 125°C
80
60
40
20
0
0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V]
Collector Current, I [A]C
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## **Figure 4. Saturation Voltage vs. VGE** **==> picture [218 x 177] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
T C = -40 ° C
16
12
8
40A
4 25A
IC = 12.5A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
[V]
CE
Collector-Emitter Voltage, V
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## **Figure 6. Saturation Voltage vs. VGE** **==> picture [181 x 154] intentionally omitted <==** **----- Start of picture text -----**
20
Common Emitter
TC = 125 ° C
16
12
8
40A
25A
4
I C = 12 . 5A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
[V]
CE
Collector-Emitter Voltage, V
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www.onsemi.com 4 ## **Typical Performance Characteristics (Continued)** **Figure 7. Capacitance Characteristics** **Figure 8. Turn-On Characteristics vs. Gate Resistance** **==> picture [468 x 597] intentionally omitted <==** **----- Start of picture text -----**
5000
Common Emitter
45004000 Ciss VT CGE = 25 = 0V, f = 1MHz°C
100
3500
3000 tr
2500
2000 td(on)
1500 Common Emitter
VCC = 600V, VGE = ±15V
1000500 CossCrss ITTCCC = 25A = 25 = 125°C °C
0 10
1 10 0 10 20 30 40 50 60 70
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω]
Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
1000
Common Emitter
V CC = 600V, V GE = ±15V
IC = 25A
td(off) 10 T C = 25°C
T C = 125°C Eon
100
tf
Common Emitter
VCC = 600V, VGE = ±15V Eoff
I T CC = 25A = 25°C 1
TC = 125°C
10
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
Gate Resistance, RG [Ω] Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C td(off)
tr
100
100
tf
td(on)
Common Emitter
VGE = ±15V, RG = 10Ω
T C = 25°C
TC = 125°C
10 20 30 40 50 10 20 30 40 50
Collector Current, IC [A] Collector Current, IC [A]
Capacitance [pF]
Switching Time [ns]
Switching Time [ns] Switching Loss [mJ]
Switching Time [ns] Switching Time [ns]
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www.onsemi.com 5 ## **Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics** **==> picture [467 x 578] intentionally omitted <==** **----- Start of picture text -----**
16
Common Emitter Common Emitter
10 VT C GE= = 25±15V, R°C G = 10Ω Eon 14 R T C L = 25 = 24Ω° C
TC = 125°C 12 Vcc = 200V 600V
10 400V
Eoff
8
1
6
4
2
0.1 0
10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 200
Collector Current, IC [A] Gate Charge, Qg [nC]
Figure 15. SOA Characteristics Figure 16. Turn-Off SOA
100
100 Ic MAX (Pulsed)
50μs
Ic MAX (Continuous)
100μs
10
1ms
DC Operation
10
1
Single Nonrepetitive
0.1 Pulse TC = 25°C
Curves must be derated
linearly with increase Safe Operating Area
0.01 i n temperature 1 VGE = 15V, TC = 125°C
0.1 1 10 100 1000 1 10 100 1000
Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
]
cj
ht
Z
[
e 0.5
s
no 0.2
ps 0.1
eR 0.05 Pdm
l
amre 0.02 t1 t2
h 0.01
T Duty factor D = t1 / t2
single pulse Peak Tj = Pdm × Zthjc + T C
[V]
GE
Switching Loss [mJ] Gate-Emitter Voltage, V
[A]C
Collector Current, Ic [A] Collector Current, I
10
1
0.1
0.01
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
RectangularPulseDuration[sec]
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## **Figure 15. SOA Characteristics** www.onsemi.com 6 ## **Typical Performance Characteristics (Continued) Figure 18. Forward Characteristics** ## **Figure 19. Reverse Recovery Current** **==> picture [468 x 374] intentionally omitted <==** **----- Start of picture text -----**
50 30
25 di F /dt = 200A/μs
10
20
T J = 125° )Χ
15
di F /dt = 100A/μs
1 T J = 25° Χ) 10
5
T C = 125° )Χ
0.1 T C = 25° )Χ 0
0.0 0.4 0.8 1.2 1.6 2.0 5 10 15 20 25
Forward Voltage , V F [V] Forward Current , IF [A]
Figure 20. Stored Charge Figure 21. Reverse Recovery Time
4000 300
diF/dt = 100A/μs
3000
diF/dt = 200A/μs 200
2000 di F /dt = 200A/μs
diF/dt = 100A/μs 100
1000
0
0 5 10 15 20 25
5 10 15 20 25 Forward Current , IF [A]
Forward Current , IF [A]
Forward Current , I [A]F [A]rr
Reverse Recovery Currnet , I
Stored Recovery Charge , Q [nC]rr [ns]Reverse Recovery Time , trr
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www.onsemi.com 7 ## **Mechanical Dimensions** ## **Figure 22. TO3PN, 3-Lead, Plastic, EIAJ SC-65** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ www.onsemi.com 8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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