# IGBT, 40 A, 1.59 V, 298 W, 1.2 kV, TO-3P, 3 Pins ![Product image](https://novapart.co/image/farnell:3253694/) **URL**: https://novapart.co/products/FGA20N120FTDTU/igbt-40-a-159-v-298-w-12-kv-to-3p-3-pins **SKU**: FGA20N120FTDTU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || IGBTs || Single IGBTs **Price**: €1.5500 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 298W | | Transistor Mounting | Through Hole | | Transistor Case Style | TO-3P | | Operating Temperature Max | 150°C | | Continuous Collector Current | 40A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Saturation Voltage | 1.59V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3253694/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [68 x 8] intentionally omitted <==** **----- Start of picture text -----**
November 2013
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## **FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT** ## **Features** - Field Stop Trench Technology - High Speed Switching - Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 20 A - • High Input Impedance - RoHS Compliant ## **General Description** Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. ## **Applications** - Induction Heating, Microvewave Oven **==> picture [292 x 81] intentionally omitted <==** **----- Start of picture text -----**
C
G
TO-3P
G C E E
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## **Absolute Maximum Ratings** |**Symbol**|**Description**|**Ratings**|**Unit**| |---|---|---|---| |VCES|Collector to Emitter Voltage|1200|V| |VGES|Gate to Emitter Voltage| 25|V| |IC|Continuous Collector Current
@ TC= 25oC|40|A| ||Continuous Collector Current
@ TC= 100oC|20|A| |ICM (1)|Pulsed Collector Current|60|A| |IF|Diode Continuous Forward Current
@ TC= 25oC|20|A| ||Diode Continuous Forward Current
@ TC= 100oC|10|A| |PD|Maximum Power Dissipation
@ TC= 25oC|298|W| ||Maximum Power Dissipation
@ TC= 100oC|119|W| |TJ|Operating Junction Temperature|-55 to +150|oC| |Tstg|Storage Temperature Range|-55 to +150|oC| |TL|Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds|300|oC| **Notes:** 1: Repetitive rating, Pulse width limited by max. junction temperature ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---| |RJC(IGBT)|Thermal Resistance, Junction to Case|-|0.42|oC/W| |RJC(Diode)|Thermal Resistance, Junction to Case|-|2.0|oC/W| |RJA|Thermal Resistance, Junction to Ambient|-|40|oC/W| **1** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Package Marking and Ordering Information** |**Symbol**
~~ee~~|**Parameter**
~~ee~~|**Test Conditions**
~~ee~~|**Min.**
~~ee~~|**Typ.**
~~ee~~|**Max.**
~~ee~~|**Unit**
~~ee~~| |---|---|---|---|---|---|---| |**Off Characteristics**
~~ee~~
~~oese~~||||||| |BVCES|Collector to Emitter Breakdown Voltage V|Collector to Emitter Breakdown Voltage VGE= 0 V, IC= 1 mA|1200|-
~~oe~~|-
~~se~~|V
~~se~~| |ICES
~~es~~|Collector Cut-Off Current
~~es~~|VCE= VCES, VGE= 0 V
~~es~~|-
~~es~~|-
~~es~~
~~oe~~|1
~~es~~
~~se~~|mA
~~es~~
~~se~~| |IGES
~~es~~|G-E Leakage Current
~~es~~|VGE= VGES, VCE= 0 V
~~es~~|-
~~es~~|-
~~es~~
~~oe~~|±250
~~es~~
~~se~~|nA
~~es~~
~~se~~| |**On Characteristics**
~~es~~
~~oe se~~||||||| |VGE(th)
~~ee~~|G-E Threshold Voltage
~~ee eee~~|IC= 20 mA, VCE= VGE
~~eee~~|3.5
~~eee~~|5.9
~~eee~~|7.5
~~eee~~|V
~~eee~~| |VCE(sat)
~~ee~~|Collector to Emitter Saturation Voltage
~~ee eee~~|IC= 20 A,VGE= 15 V
TC= 25oC
~~eee~~|-
~~eee~~|1.59
~~eee~~|2
~~eee~~|V
~~eee~~| |||IC= 20 A,VGE= 15 V,
TC= 125oC
~~eee~~|-
~~eee~~|1.85
~~eee~~|-
~~eee~~|V
~~eee~~| |**Dynamic Characteristics**
~~ee eee~~||||||| |Cies
~~Se~~|Input Capacitance
~~Se~~|VCE= 30 V,VGE= 0 V,
f = 1 MHz
~~Se~~|-
~~Se~~|3080
~~Se~~|-
~~Se~~|pF
~~Se~~| |Coes
~~Se~~|Output Capacitance
~~Se~~||-
~~Se~~|95
~~Se~~|-
~~Se~~|pF
~~Se~~| |Cres
~~Se~~|Reverse Transfer Capacitance
~~Se~~||-
~~Se~~|60
~~Se~~|-
~~Se~~|pF
~~Se~~| |**Switching Characteristics**||||||| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 20 A,
RG= 10, VGE= 15 V,
Resistive Load, TC= 25oC|-|30|-|ns| |tr|Rise Time||-|79|-|ns| |td(off)|Turn-Off Delay Time||-|143|-|ns| |tf|Fall Time||-|217|320|ns| |Eon|Turn-On Switching Loss||-|0.42|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.71|1.05|mJ| |Ets|Total Switching Loss||-|1.13|-|mJ| |td(on)|Turn-On Delay Time|VCC= 600 V, IC= 20 A,
RG= 10, VGE= 15 V,
Resistive Load, TC= 125oC|-|29|-|ns| |tr|Rise Time||-|93|-|ns| |td(off)|Turn-Off Delay Time||-|147|-|ns| |tf|Fall Time||-|259|-|ns| |Eon|Turn-On Switching Loss||-|0.47|-|mJ| |Eoff|Turn-Off Switching Loss||-|0.86|-|mJ| |Ets|Total Switching Loss||-|1.33|-|mJ| |Qg|Total Gate Charge|VCE= 600 V, IC= 20 A,
VGE= 15 V|-|137|-|nC| |Qge|Gate to Emitter Charge||-|23|-|nC| |Qgc|Gate to Collector Charge||-|65|-|nC| **2** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Electrical Characteristics of the Diode** TC = 25°C unless otherwise noted |**Symbol**|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |VFM|Diode Forward Voltage|IF= 20 A|TC= 25oC|-|1.3|1.7|V| ||||TC= 125oC|-|1.3|-|| |trr|Diode Reverse Recovery Time|IF=20 A,
diF/dt = 200 A/s|TC= 25oC|-|447|-|ns| ||||TC= 125oC|-|485|-|| |Irr|Diode Peak Reverse Recovery Current||TC= 25oC|-|48|-|A| ||||TC= 125oC|-|50|-|| |Qrr|Diode Reverse Recovery Charge||TC= 25oC|-|10.8|-|C| ||||TC= 125oC|-|12|-|| **3** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics** **==> picture [428 x 589] intentionally omitted <==** **----- Start of picture text -----**
180 180
TC = 25oC 20V 17V TC = 125oC 20V 17V
15V
150 150
noun) aa P| 15V
120 120
Sone)/ooneee A
90 12V 90 12V
SEP} Eoeeee/ denn
60 60
[iD -ose [aanFEE7aaenee
8V 7V VGE = 6V 10V 7V VGE = 6V 10V
30 30 9V
9V
8V
0 0
0.0 Lf 1.5 3.0 4.5 6.0 7.5 9.0 0.0 2S 1.5 3.0 4.5 ls=== 6.0 7.5 9.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
120 120
Common Emitter Common Emitter
100 © VTCGE = 25 = 15VoC LAA 100 aes VTCCE = 25 = 20V o C
80 TC = 125oC 80 TC = 125 o C
| - ARE pepe
60 60
PET Ae ee ao
40 40
pa ppg
20 pA 20 n/a
0 0
0 AT 1 2 3 4 5 6 3 oA 6 9 12 15
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE GE
Temperature at Variant Current Level
2.8 20
Common Emitter Common Emitter
VGE = 15V TC = 25 o C
40A
16
2.4 | I} ee
12
2.0 pert} |
20A
8
Gone foeoe
1.6 pecaaaee== FE
IC = 10A 4 20A 40A
| ene) Geeue
IC = 10A
1.2 oe 0 EPR
25 50 75 100 125 0 4 8 12 16 20
Case Temperature, TC [ [o] C] Gate-Emitter Voltage, VGE [V]
[A]C [A]C
Collector Current, I Collector Current, I
[A]
[A] C
C Collector Current, I
Collector Current, I
[V] [V]
CE CE
V
,
Collector-Emitter Voltage, V Collector-Emitter Voltage
**----- End of picture text -----**
**Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Characteristics** **Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE GE Temperature at Variant Current Level** **4** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [469 x 597] intentionally omitted <==** **----- Start of picture text -----**
Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics
20 5000
Common Emitter Common Emitter
TC = 125 o C Cies V GE = 0V, f = 1MHz
16 4000 TC = 25 o C
| ee
12 CHIL| 3000 oS
8 CIPe| 2000 foo
Coes
20A
4 40A 1000
CA) IC = 10A Cres
0 a 0 aee
0 4 8 12 16 20 1 10 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
15 100
Common Emitter 10  s
TC = 25 o C
12 V CC = 200V 600V 10 100  s
9 Tt S 1ms
400V
1 10 ms
6 DC
wianacenee 0.1 ASM *Notes:
3 1. TC = 25 [o] C
2. TJ = 150 [o] C
3. Single Pulse
0 FCPP 0.01 poSHE:
0 30 60 90 120 150 1 10 100 1000 2000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
300 2000
Common Emitter
VCC = 600V, VGE = 15V
1000 IC = 20A
TC = 25oC
100 tr TC = 125oC t d(off)
eee | [oe
td(on) Common Emitter tf
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125 = oC 100 ja
10 tte] 70 EEL
0 20 40 60 80 100 0 20 40 60 80 100
Gate Resistance, RG [  ] Gate Resistance, RG [  ]
]
V
[
CE
Collector-Emitter Voltage, V Capacitance [pF]
[V]
GE Collector Current, I [A]c
Gate-Emitter Voltage, V
Switching Time [ns] Switching Time [ns]
**----- End of picture text -----**
**5** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [469 x 598] intentionally omitted <==** **----- Start of picture text -----**
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
500 1000
Common Emitter
V GE = 15V, R G = 10 
TTCC = 25 = 125oC oC t r t f
100
100 td(off)
Common Emitter
t VGE = 15V, RG = 10 
d(on)
T C = 25oC
TC = 125oC
10 Py 10 ELT
10 20 30 40 50 10 20 30 40 50
Collector Current, IC [A] Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current
4 10
Common Emitter Common Emitter
V CC = 600V, V GE = 15V V GE = 15V, R G = 10 
IC = 20A T C = 25 o C
T TCC = 25 = 125 oC oC Eoff TC = 125oC E off
1 1 Eon
E on
0.3 ar 0.1
0 20 40 60 80 | 100 10 Pa 20 30 40 50
Gate Resistance, RG [  ] Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
30
80
10 TJ = 125 o C
T J = 25oC
10 eel
1
Safe Operating Area TC = 125 [o] C
1 VGE = 15V, TC = 125oC TC = 25 [o] C
1 i 10 100 1000 2000 0.1 AS
0.0 0.5 1.0 1.5 2.0
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
Switching Time [ns] Switching Time [ns]
Switching Loss [mJ] Switching Loss [mJ]
[A]C [A]F
Collector Current, I Forward Current, I
**----- End of picture text -----**
**6** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Typical Performance Characteristics** **==> picture [418 x 571] intentionally omitted <==** **----- Start of picture text -----**
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
60 15000
50
ee 12000 Pf Pp
40 200A/  s 200A/  s
pa 9000 ee
30 di F /dt = 100A/  s
a ee 6000 oe ee
20 HOE di F /dt = 100A/  s a
3000
10 aoanetee AT
T C = 25 [o] C TC = 25 [o] C
0 Ff 7 0 foe
5 10 15 20 25 5 10 15 20 25
Forward Current, IF [A] Forward Current, IF [A]
Figure 21.Reverse Recovery Time
1000
800
diF/dt = 100A/  s
PTT
600
200A/  s
400
eonaee=
200 aT
TC = 25 [o] C
0 tS
5 10 15 20 25
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
Sty SE 2 at
0.02
0.01 PDM
0.01
single pulse t1
t2
Duty Factor, D = t1/t2
[Peak T] [j] [ = Pdm x Zthjc + T] C
1E-3 AH
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
[A]
rr
[nC]
rr
Reverse Recovery Currnet, I
Stored Recovery Charge, Q
[ns]
rr
Reverse Recovery Time, t
Thermal Response [Zthjc]
**----- End of picture text -----**
**7** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **Mechanical Dimensions** **Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003_ **8** ©2008 Fairchild Semiconductor Corporation FGA20N120FTD Rev. C1 www.fairchildsemi.com ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. **==> picture [434 x 196] intentionally omitted <==** **----- Start of picture text -----**
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|||| |---|---|---| |Datasheet Identification|Product Status|Definition| |Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications| |may change in any manner without notice.| |Datasheet contains preliminary data; supplementary data will be published at a later| |Preliminary|First Production|date. Fairchild Semiconductor reserves the right to make changes at any time without| |notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to| |make changes at any time without notice to improve the design.| |Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild| |Semiconductor. The datasheet is for reference information only.| **----- End of picture text -----**
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