# Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 650 V, 10 A, 25 nC, TO-220
**URL**: https://novapart.co/products/FFSP1065B/silicon-carbide-schottky-diode-elitesic-series
**SKU**: FFSP1065B
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.2500
**Stock**: 500+
**Lead Time**: 64 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | EliteSiC Series |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 25nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3265438/)
**DATA SHEET www.onsemi.com** ~~ee~~
## Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
## **ELECTRICAL CONNECTION**
## FFSP1065B
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
## **Features**
- Max Junction Temperature 175°C
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1. Cathode 2. Anode
1
2
TO−220−2LD
CASE 340BB
**----- End of picture text -----**
- Avalanche Rated 49 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
## **MARKING DIAGRAM**
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **Applications**
- General Purpose
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FFSP
1065B
AYWWZZ
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- SMPS, Solar Inverter, UPS
- Power Switching Circuit
## **ABSOLUTE MAXIMUM RATINGS**
FFSP1065B = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code
(TC = 25 ° C, Unless otherwise specified)
|**Symbol**
**Parameter**
**Value**
**Unit**
VRRM
Peak Repetitive Reverse Voltage
650
V
EAS
Single Pulse Avalanche Energy (Note 1)
49
mJ
IF
Continuous Rectified Forward Current @
TC<139°C
10
A
Continuous Rectified Forward Current @
TC<135°C
11
~~es ee~~
~~|~~|**ORDERING INFORMATION**
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
= Assembly Location
Y
= Year
WW
= Work Week
ZZ
= Assembly Lot Code
~~ee~~|
|---|---|
|IF, Max
Non−Repetitive Peak
Forward Surge Current
TC= 25°C, 10 s
650
A
TC= 150°C, 10 s
570
~~a~~
~~-—-~~||
|IF, SM
Non−Repetitive Forward
Surge Current
Half−Sine Pulse,
tp= 8.3 ms
45
A
~~ee~~||
|Ptot
Power Dissipation
TC= 25°C
75
W
TC= 150°C
12.5
TJ, TSTG
Operating and Storage Temperature Range
−55 to +175
°C
~~a~~
~~—-~~
~~a ee~~
~~eeee~~||
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. EAS of 49 mJ is based on starting TJ = 25 ° C, L = 0.5 mH, IAS = 14 A, V = 50 V.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2019 **January, 2023 − Rev. 1**
**FFSP1065B/D**
**FFSP1065B**
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Parameter**|**Ratings**|**Unit**|
|---|---|---|---|
|RθJC|Thermal Resistance, Junction to Case, Max.|2.0|°C/W|
## **ELECTRICAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted
|**ELECTRICA**|**L CHARACTERISTICS** TC = 25°C unless oth|erwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VF|Forward Voltage|IF= 10 A, TC= 25°C|−|1.38|1.7|V|
|||IF= 10 A, TC= 125°C|−|1.6|2.0||
|||IF= 10 A, TC= 175°C|−|1.72|2.4||
|IR|Reverse Current|VR= 650 V, TC= 25°C|−|0.5|40|�A|
|||VR= 650 V, TC= 125°C|−|1.0|80||
|||VR= 650 V, TC= 175°C|−|2.0|160||
|QC|Total Capacitive Charge|V = 400 V|−|25|−|nC|
|C|Total Capacitance|VR= 1 V, f = 100 kHz|−|421|−|pF|
|||VR= 200 V, f = 100 kHz|−|46|−||
|||VR= 400 V, f = 100 kHz|−|35|−||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **PACKAGE MARKING AND ORDERING INFORMATION**
|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FFSP1065B|FFSP1065B|TO−220−2L|Tube|N/A|N/A|50 Units|
**www.onsemi.com**
**2**
**FFSP1065B**
## **TYPICAL CHARACTERISTICS** TJ = 25 ° C UNLESS OTHERWISE NOTED
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20
TJ = −55 ° C
TJ = 25 ° C
15
TJ = 175 ° C
TJ = 125 ° C
10
TJ = 75 ° C
5
0
0 1 2 3
, FORWARD CURRENT (A)IF
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VF, FORWARD VOLTAGE (V)
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**Figure 1. Forward Characteristics**
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10−5
10−6
TJ = 175 ° C
10−7
T J = 125 ° C
10−8 T J = 75 ° C
TJ = 25 ° C
10−9 TJ = −55 ° C
200 300 400 500 600 650
VR, REVERSE VOLTAGE (V)
, REVERSE CURRENT (A)
IR
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**Figure 2. Reverse Characteristics**
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**----- Start of picture text -----**
100 80
D = 0.1
80
60
D = 0.2
60
40
D = 0.3
40
D = 0.5
20
20
D = 0.7 D = 1
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE ( � C) TC, CASE TEMPERATURE ( � C)
Figure 3. Current Derating Figure 4. Power Dissipation
40 1000
30
20 100
10
0 10
0 100 200 300 400 500 600 650 0.1 1 10 100 650
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
, POWER DISSIPATION (W)
TOT
, PEAK FORWARD CURRENT (A)IF P
CAPACITANCE (pF)
, CAPACITANCE CHARGE (nC)
C
Q
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**Figure 5. Capacitance Charge vs. Reverse Voltage**
**Figure 6. Capacitance vs. Reverse Voltage**
**www.onsemi.com**
**3**
**FFSP1065B**
## **TYPICAL CHARACTERISTICS** TJ = 25 ° C UNLESS OTHERWISE NOTED (CONTINUED)
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10
8
~ Lee Eety
6
Pt tt [tLe]
4 ERE
20 CetB=_ anne
0 100 200 300 400 500 600 650
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
DUTY CYCLE−DESCENDING ORDER
1
Sener D = 0.5 emer ereeeareecelll
0.1
Sa ss | D = 0.2
D = 0.1
Sse
D = 0.05
0.01
D = 0.02
D = 0.01
SINGLE PULSE
0.001
10−6 10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
J)
, CAPACITIVE ENERGY (
C
E
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
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**Figure 8. Junction−to−Case Transient Thermal Response Curve**
## **TEST CIRCUIT AND WAVEFORMS**
L = 0.5 mH
**Figure 9. Unclamped Inductive Switching Test Circuit & Waveform**
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−220−2LD** CASE 340BB ISSUE O DATE 31 AUG 2016
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4.09
3 .50
0.36 [M] B A M
10.67 B
A
9.65 8.89
3.43 1.40 6.86
2.54 0.51
7° 6.86
“en 3° ae 5.84
13.40
16.51
14.22 12.19
16.15
9.40 15.75
8.38 5° 5°
3° fe 3° ry
1 2 6.35 MAX
0.60 MAX
C
14.73
1.65 13.60
1.91
1.25
2.54 0.61
0.33
1.02 2.92
0.38 2.03
5.08
F 0.36 T [M] C A B
NOTES:
5° 5° A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
3° 3° VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.80 D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
4.30 MOLD FLASH AND TIE BAR PROTRUSIONS.
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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13832G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−220−2LD PAGE 1 OF 1** ~~ee~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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## Links
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- [Supplier page](https://es.farnell.com/onsemi/ffsp1065b/sic-schottky-diode-650v-10a-to/dp/3265438)
---
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