# Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 650 V, 10 A, 34 nC, TO-220
**URL**: https://novapart.co/products/FFSP1065A/silicon-carbide-schottky-diode-elitesic-series
**SKU**: FFSP1065A
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.6000
**Stock**: 10+
**Lead Time**: 64 days (indicative)
## Description
Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:10A; Total Capacitive Charge Qc:34nC; Diode Case Style:TO-220;
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (27-Jun-2024) |
| No. Of Pins | 2 Pin |
| Product Range | EliteSiC Series |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 34nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2835587/)
**DATA SHEET www.onsemi.com** ~~—~~
## Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, TO-220-2L FFSP1065A
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1. Cathode 2. Anode
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Schottky Diode
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## **Description**
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
## **Features**
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1
2
TO−220−2LD
CASE 340BB
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- Max Junction Temperature 175°C
- Avalanche Rated 64 mJ
## **MARKING DIAGRAM**
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant
## **Applications**
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
AXYYKK FFSP 1065A ~~1~~ A = Assembly Plant Code XYY = Date Code (Year & Week) KK = Lot Traceability Code FFSP1065A = Specific Device Code
## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number: **FFSP1065A/D**
**1**
© Semiconductor Components Industries, LLC, 2017 **February, 2023 − Rev. 3**
**FFSP1065A**
**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted)
|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**AXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VRRM|Peak Repetitive Reverse Voltage||650|V|
|EAS|Single Pulse Avalanche Energy (Note 1)||64|mJ|
|IF|Continuous Rectified Forward Current @ TC< 152°C||10|A|
||Continuous Rectified Forward Current @ TC< 135°C||15|A|
|IF,Max|Non-Repetitive Peak Forward Surge Current|TC= 25°C, 10�s|760|A|
|||TC= 150°C, 10�s|740|A|
|IF,SM|Non-Repetitive Forward Surge Current|Half−Sine Pulse, tp= 8.3 ms|56|A|
|IF,RM|Repetitive Forward Surge Current|Half−Sine Pulse, tp= 8.3 ms|38|A|
|PTOT|Power Dissipation|TC= 25°C|111|W|
|||TC= 150°C|19|W|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +175|°C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. EAS of 64 mJ is based on starting TJ = 25 ° C, L = 0.5 mH, IAS = 16 A, V = 50 V.
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max|1.35|°C/W|
## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted)
|**ELECTRICAL**|**CHARACTERISTICS**(TC=|25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|VF|Forward Voltage|IF= 10 A, TC= 25°C|−|1.50|1.75|V|
|||IF= 10 A, TC= 125°C|−|1.6|2.0||
|||IF= 10 A, TC= 175°C|−|1.72|2.4||
|IR|Reverse Current|VR= 650 V, TC= 25°C|−|−|200|�A|
|||VR= 650 V, TC= 125°C|−|−|400||
|||VR= 650 V, TC= 175°C|−|−|600||
|QC|Total Capacitive Charge|V = 400 V|−|34|−|nC|
|C|Total Capacitance|VR= 1 V, f = 100 kHz|−|575|−|pF|
|||VR= 200 V, f = 100 kHz|−|62|−||
|||VR= 400 V, f = 100 kHz|−|47|−||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **ORDERING INFORMATION**
|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Quantity**|
|---|---|---|---|---|
|FFSP1065A|FFSP1065A|TO−220−2LD|Tube|50 Units|
**www.onsemi.com**
**2**
**FFSP1065A**
## **TYPICAL CHARACTERISTICS**
(TJ = 25 ° C UNLESS OTHERWISE NOTED)
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10
8
6
4
2 TT TJ J = 125 = 75 J = 175 ° C ° C ° C TTJJ = −55= 25 ° C ° C
0
0.0 0.5 1.0 1.5 2.0
VF, Forward Voltage (V)
, Forward Current (A)
IF
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**Figure 1. Forward Characteristics**
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10 [−5]
10 [−6]
TJ = 175 ° C
10 [−7]
TJ = 125 ° C
10 [−8] TJ = 75 ° C
10 [−9] TJ = 25 ° C TJ = −55 ° C
200 300 400 500 600 650
VR, Reverse Voltage (V)
, Reverse Current (A)
IR
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**Figure 2. Reverse Characteristics**
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150
D = 0.1
100
D = 0.2
D = 0.3
50 D = 0.5
D = 0.7 D = 1
0
25 50 75 100 125 150 175
TC, Case Temperature ( � C)
Figure 3. Current Derating
50
40
30
20
10
0
0 100 200 300 400 500 600 650
VR, Reverse Voltage (V)
, Peak Forward Current (A)
IF
, Capacitive Charge (nC)
C
Q
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**Figure 5. Capacitive Charge vs. Reverse Voltage**
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120
80
40
0
25 50 75 100 125 150 175
TC, Case Temperature ( � C)
Figure 4. Power Derating
1000
100
10
0.1 1 10 100 650
VR, Reverse Voltage (V)
, Power Dissipation (W)
TOT
P
Capacitance (pF)
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**Figure 6. Capacitance vs. Reverse Voltage**
**www.onsemi.com**
**3**
**FFSP1065A**
## **TYPICAL CHARACTERISTICS** (CONTINUED)
(TJ = 25 ° C UNLESS OTHERWISE NOTED)
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12
10
8
6
4
2
0
0 100 200 300 400 500 600 650
VR, Reverse Voltage (V)
J)
�
, Capacitive Energy (
C
E
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**Figure 7. Capacitance Stored Energy**
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2
DUTY CIRCLE−DESCENDING ORDER
1
D=0.5
0.2
0.1 PDM
t 1
0.1 t2
0.05
0.01 NOTES:
0.02 Z � JC(t) = r(t) × R � JC
0.01 R � JC = 1.35 ° C/W
SINGLE PULSE Peak T J = P DM × Z � JC (t) + T C
Duty Cycle, D = t1 / t2
0.001
10 [−6] 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 1
t, Rectangular Pulse Duration (s)
Impedance
, Normalized Thermal
JC
�
Z
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**Figure 8. Junction−to−Case Transient Thermal Response Curve**
## **TEST CIRCUIT AND WAVEFORMS**
L = 0.5 mH R < 0.1 � VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL))
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L R VAVL
+
CURRENT
Q1 SENSE VDD IL IL
I V
DUT VDD
−
t0 t1 t2 t
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**Figure 9. Unclamped Inductive Switching Test Circuit & Waveform**
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**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−220−2LD** CASE 340BB ISSUE O
DATE 31 AUG 2016
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4.09
3 .50
0.36 [M] B A M
10.67 B
A
9.65 8.89
3.43 1.40 6.86
2.54 0.51
7° 6.86
3° 5.84
13.40
16.51
14.22 12.19
16.15
9.40 15.75
8.38 5° 5°
3° 3°
1 2 6.35 MAX
0.60 MAX
C
14.73
1.65 13.60
1.91
1.25
2.54 0.61
0.33
1.02 2.92
0.38 2.03
5.08
0.36 [M] C A B
NOTES:
5° 5° A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
3° 3° VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
4.80 D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
4.30 MOLD FLASH AND TIE BAR PROTRUSIONS.
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13832G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−220−2LD PAGE 1 OF 1
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**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
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## Links
- [View this product on Novapart](https://novapart.co/products/FFSP1065A/silicon-carbide-schottky-diode-elitesic-series)
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- [Supplier page](https://es.farnell.com/onsemi/ffsp1065a/sic-schottky-diode-650v-10a-to/dp/2835587)
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