# SIC SCHOTTKY DIODE, 650V, 6A, PQFN

![Product image](https://novapart.co/image/farnell:4067379/)

**URL**: https://novapart.co/products/FFSM0665B/sic-schottky-diode-650v-6a-pqfn
**SKU**: FFSM0665B
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.2400
**Stock**: 10+
**Lead Time**: 135 days (indicative)

## Description

Product Range:EliteSiC Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:650V; Average Forward Current:6A; Total Capacitive Charge:16nC; Diode Cas 91AH7518

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4 Pin |
| Product Range | EliteSiC Series |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | PQFN |
| Diode Configuration | Single |
| Average Forward Current | 6A |
| Total Capacitive Charge | 16nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4067379/)

## **ON Semiconductor** 

## **Is Now** 

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**To learn more about onsemi™, please visit our website at www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## Silicon Carbide Schottky Diode 

## 650 V, 6 A 

## FFSM0665B 

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 

## **www.onsemi.com** 

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**----- Start of picture text -----**<br>
power semiconductor. System benefits include highest efficiency, VRRM IF<br>faster operating frequency, increased power density, reduced EMI, and 650 V 6.0 A<br>[|__|<br>reduced system size and cost.<br>Features<br>• Max Junction Temperature 175°C<br>• Avalanche Rated 24.5 mJ<br>el<br>• High Surge Current Capacity 5. Cathode 3, 4. Anode<br>• Positive Temperature Coefficient 1, 2. Floating<br>• Ease of Paralleling Schottky Diode<br>• No Reverse Recovery / No Forward Recovery<br>• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS<br>Pin1<br>Compliant 5<br>Applications 4<br>• General Purpose 3 2 1<br>• SMPS, Solar Inverter, UPS<br>ee PQFN 8 8, 2P<br>• Power Switching Circuits CASE 483AP<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

**Parameter Symbol Value Unit** Peak Repetitive Reverse Voltage VRRM 650 V Single Pulse Avalanche Energy (TJ = 25 ° C, EAS 24.5 mJ IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V) Continuous Rectified Forward TC < 154 IF 6.0 A Current TC < 135 9.1 ~~oS~~ Non−Repetitive Peak Forward TC = 25 ° C, IFM 292 A Surge Current tP = 10 s ~~pf Ft~~ TC = 150 ° C, 262 tP = 10 s Non−Repetitive Forward Surge TC = 25 ° C IFSM 28 A Current (Half−Sine Pulse) tP = 8.3 ms Power Dissipation TC = 25 ° C Ptot 75 W ~~a~~ Operating Junction and Storage TemperatureT ~~ee~~ C = 150 ° C TJ ~~ee~~ , Tstg −55 to12.5 ~~ee~~ ° C Range +175 ~~eeeee~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**MARKING DIAGRAM** $Y FFSM 0665B &Z&K&3 ~ $Y = ON Semiconductor Logo FFSM0665B = Specific Device Code &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information  on page 2 of this data sheet. 

## **THERMAL RESISTANCE** 

|**THERMAL RESISTANCE**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Case|R JC|2.0|°C/W|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2019 **July, 2020 − Rev. 0** 

**FFSM0665B/D** 

**FFSM0665B** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS **(TJ=|25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**ON CHARACTERISTICS**|||||||
|VF|Forward Voltage|IF= 6.0 A, TJ= 25°C||1.43|1.7|V|
|||IF= 6.0 A, TJ= 125°C||1.62|||
|||IF= 6.0 A, TJ= 175°C||1.69|||
|IR|Reverse Current|VR= 650 V, TJ= 25°C||0.5|40|�A|
|||VR= 650 V, TJ= 125°C||1.0|80||
|||VR= 650 V, TJ= 175°C||2.0|160||
|**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||
|QC|Total Capacitive Charge|VC= 400 V||16||nC|
|Ctot||VR= 1 V, f = 100 kHz||259||pF|
|||VR= 200 V, f = 100 kHz||29|||
|||VR= 400 V, f = 100 kHz||22|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **PART MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**†|**Quantity**|
|---|---|---|---|---|
|FFSM0665B|FFSM0665B|PQFN 8X8, 2P<br>(Halogen Free)|Tape & Reel|3000 units|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**2** 

**FFSM0665B** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

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**----- Start of picture text -----**<br>
12 1.E−06<br>TJ = −55 [o] C<br>10 T J  = 25 [o] C<br>TJ = 75 [o] C TJ = 175 [o] C<br>8 1.E−07<br>6 TJ = 125 [o] C TJ = 175 [o] C<br>TJ = 125 [o] C<br>4 1.E−08<br>TJ = 75 [o] C<br>2 T J = 25 [o] C<br>TJ = −55 [o] C<br>0 1.E−09<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 650<br>VF, FORWARD VOLTAGE (V) V R , REVERSE VOLTAGE (V)<br>Figure 1. Forward Characteristics Figure 2. Reverse Characteristics<br>100 100<br>80 80<br>D = 0.1<br>60 60<br>D = 0.2<br>40 D = 0.3 40<br>D = 0.5<br>20 20<br>D = 0.7 D = 1<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>TC , CASE TEMPERATURE  ( [ o] C ) TC , CASE TEMPERATURE  ( [ o] C )<br>, FORWARD CURRENT (A)IF , REVERSE CURRENT (A)IR<br>, POWER DISSIPATION (W)<br>, PEAK FORWARD CURRENT (A) TOT<br>IF P<br>**----- End of picture text -----**<br>


**Figure 3. Current Derating** 

**Figure 4. Power Derating** 

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**----- Start of picture text -----**<br>
25 1000<br>20<br>15<br>100<br>10<br>5<br>0 10<br>0 100 200 300 400 500 600 650 0.1 1 10 100 650<br>VR, REVERSE VOLTAGE (V) V R , REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, CAPACITIVE CHARGE (nC)<br>C<br>Q<br>**----- End of picture text -----**<br>


**Figure 5. Capacitive Charge vs. Reverse Voltage** 

**Figure 6. Capacitance vs. Reverse Voltage** 

**www.onsemi.com** 

**3** 

**FFSM0665B** 

## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

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6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600 650<br>V R, REVERSE VOLTAGE (V)<br>Figure 7. Capacitance Stored Energy<br>2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>SINGLE PULSE<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1<br>t, RECTANGULAR PULSE DURATION (sec)<br>J)<br> �<br>, CAPACITIVE ENERGY (<br>C<br>E<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 8. Junction−to−Case Transient Thermal Response** 

**www.onsemi.com** 

**4** 

**FFSM0665B** 

## **PACKAGE DIMENSIONS** 

**PQFN4 8X8, 2P** CASE 483AP ISSUE O 

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**www.onsemi.com** 

**5** 

**FFSM0665B** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **Email Requests to:** orderlit@onsemi.com 

**ON Semiconductor Website:** www.onsemi.com 

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**Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative 

**6** 



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