FFSH40120A-F155.

**DATA SHEET www.onsemi.com** ~~—~~ 

## Silicon Carbide Schottky Diode ~~—~~ 

## 1200 V, 40 A 

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## **Schottky Diode** 

## _Product Preview_ FFSH40120A-F155 

## **Description** 

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 

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1<br>2<br>TO−247−2LD<br>CASE 340DC<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

## **Features** 

- Max Junction Temperature 175°C 

- Avalanche Rated 420 mJ 

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- High Surge Current Capacity 

- Positive Temperature Coefficient 

- Ease of Paralleling 

- No Reverse Recovery/No Forward Recovery 

- This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant 

## **Applications** 

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A = Assembly Location<br>Y = Year<br>WW = Work Week<br>ZZ = Assembly Lot Code<br>**----- End of picture text -----**<br>


- General Purpose 

- SMPS, Solar Inverter, UPS 

- Power Switching Circuits 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

This document contains information on a product under development. **onsemi** reserves the right to change or discontinue this product without notice. 

Publication Order Number: **FFSH40120A−F155/D** 

**1** 

© Semiconductor Components Industries, LLC, 2021 **August, 2021 − Rev. P1** 

**FFSH40120A−F155** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**AXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VRRM|Peak Repetitive Reverse Voltage||1200|V|
|EAS|Single Pulse Avalanche Energy (Note 1)||420|mJ|
|IF|Continuous Rectified Forward Current @ TC< 155°C||40|A|
||Continuous Rectified Forward Current @ TC< 135°C||61||
|IF, Max|Non-Repetitive Peak Forward Surge Current|TC= 25°C, 10�s|1650|A|
|||TC= 150°C, 10�s|1550|A|
|IF,SM|Non-Repetitive Forward Surge Current|Half-Sine Pulse, tp= 8.3 ms|270|A|
|IF,RM|Repetitive Forward Surge Current|Half-Sine Pulse, tp= 8.3 ms|120|A|
|Ptot|Power Dissipation|TC= 25°C|682|W|
|||TC= 150°C|114|W|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +175|°C|
||TO247 Mounting Torque, M3 Screw||60|Ncm|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. EAS of 420 mJ is based on starting TJ = 25 ° C, L = 0.5 mH, IAS = 41 A, V = 50 V. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max|0.22|°C/W|



## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC=|25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|VF|Forward Voltage|IF= 40 A, TC= 25°C|−|1.45|1.75|V|
|||IF= 40 A, TC= 125°C|−|1.7|2.0||
|||IF= 40 A, TC= 175°C|−|2.0|2.4||
|IR|Reverse Current|VR= 1200 V, TC= 25°C|−|−|200|�A|
|||VR= 1200 V, TC= 125°C|−|−|300||
|||VR= 1200 V, TC= 175°C|−|−|400||
|QC|Total Capacitive Charge|V = 800 V|−|220|−|nC|
|C|Total Capacitance|VR= 1 V, f = 100 kHz|−|2250|−|pF|
|||VR= 400 V, f = 100 kHz|−|204|−||
|||VR= 800 V, f = 100 kHz|−|169|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Shipping**|
|---|---|---|---|
|FFSH40120A−F155|FFSH40120A|TO−247−2LD<br>(Pb−Free/Halogen Free)|30 Units / Tube|



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**FFSH40120A−F155** 

## **TYPICAL CHARACTERISTICS** 

(TJ = 25 ° C unless otherwise noted) 

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40<br>TJ = −55 [o] C<br>TJ = 25 [o] C<br>30<br>TJ = 75 [o] C<br>T J  = 175 [o] C<br>TJ = 125 [o] C<br>20<br>10<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br>


**Figure 1. Forward Characteristics** 

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500<br>400<br>D = 0.1<br>D = 0.2<br>300<br>D = 0.3<br>200 D = 0.5<br>100 D = 0.7 D = 1<br>0<br>25 50 75 100 125 150 175<br>TC , CASE TEMPERATURE  ( o C )<br>Figure 3. Current Derating<br>240<br>180<br>120<br>60<br>0<br>0 200 400 600 800<br>VR, REVERSE VOLTAGE (V)<br>, PEAK FORWARD CURRENT (A)IF<br>, CAPACITIVE CHARGE (nC)<br>C<br>Q<br>**----- End of picture text -----**<br>


**Figure 5. Capacitive Charge vs. Reverse Voltage** 

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10−5<br>10−6<br>TJ = 175  [o] C<br>−7 TJ = 75 [o] C<br>10<br>TJ = 25 [o] C TJ = 125 [o] C<br>10−8<br>10−9 TJ = −55 [o] C<br>0 200 400 600 800 1000 1200<br>VR, REVERSE VOLTAGE (V)<br>Figure 2. Reverse Characteristics<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br>TC , CASE TEMPERATURE  ( o C )<br>, REVERSE CURRENT (A)<br>IR<br>, POWER DISSIPATION (W)<br>TOT<br>P<br>**----- End of picture text -----**<br>


**Figure 4. Power Derating** 

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10000<br>1000<br>100<br>0.1 1 10 100 800<br>VR, REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance vs. Reverse Voltage** 

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**FFSH40120A−F155** 

## **TYPICAL CHARACTERISTICS** 

(TJ = 25 ° C unless otherwise noted) 

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70<br>56<br>42<br>28<br>14<br>0<br>0 200 400 600 800<br>VR, REVERSE VOLTAGE (V)<br>J)<br>, CAPACITIVE ENERGY ( �<br>C<br>E<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Stored Energy** 

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2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>PDM<br>10−1<br>D=0.5 t1<br>D=0.2 t2<br>D=0.1<br>10−2 D=0.02 D=0.05 NOTESZ � JC(t) = r(t) x R � JC<br>D=0.01 R � JC = 0.22  ° C/W<br>SINGLE PULSE Peak TJ = PDM x  Z � JC(t) + TC<br>Duty cycle, D = t1 / t2<br>10−3<br>10−6 10−5 10−4 10−3 10−2 10−1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 8. Junction-to-Case Transient Thermal Response Curve** 

## **TEST CIRCUIT AND WAVEFORMS** 

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L = 0.5 mH<br>R < 0.1  �<br>VDD = 50 V<br>EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL))<br>L R VAVL<br>+<br>CURRENT<br>Q1 SENSE VDD IL IL<br>I V<br>VDD<br>DUT −<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 9. Unclamped Inductive Switching Test Circuit & Waveform** 

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**FFSH40120A−F155** 

## **PACKAGE DIMENSIONS** 

**TO−247−2LD** CASE 340DC ISSUE O 

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**FFSH40120A−F155** 

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