# Silicon Carbide Schottky Diode, EliteSiC, Dual Common Cathode, 650 V, 36 A, 52 nC, TO-247
**URL**: https://novapart.co/products/FFSH3065ADN-F155/silicon-carbide-schottky-diode-elitesic-dual
**SKU**: FFSH3065ADN-F155
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €5.6100
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 36A |
| Total Capacitive Charge | 52nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3607855/)
**DATA SHEET www.onsemi.com**
## Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-247-3L FFSH3065ADN-F155
1 2
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3
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**TO−247 LONG LEAD CASE 340CH**
## **Description**
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1 2 3 faster operating frequency, increased power density, reduced EMI, and Anode Cathode/Case Anode reduced system size and cost. **Features MARKING DIAGRAM** ~~oe~~ • Max Junction Temperature 175°C ee • Avalanche Rated 81 mJ ~~SAM~~ • High Surge Current Capacity • Positive Temperature Coefficient AYWWKK • Ease of Paralleling FFSH 3065ADN • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Se ~~t~~ ¢G G SS **Applications** • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits TRC as dv ow cK © A = Assembly Plant Code
A = Assembly Plant Code YWW = Date Code (Year & Week) KK = Lot Traceability Code FFSH3065ADN = Specific Device Code
## **ORDERING INFORMATION**
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Publication Order Number: **FFSH3065ADN−F155/D**
**1**
© Semiconductor Components Industries, LLC, 2017 **May, 2024 − Rev. 6**
**FFSH3065ADN−F155**
**Table 1. ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted)
|**Table 1. ABS**|**OLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|**OLUTE MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VRRM|Peak Repetitive Reverse Voltage||650|V|
|EAS|Single Pulse Avalanche Energy (Note 1)||81|mJ|
|IF|Continuous Rectified Forward Current @ TC< 148°C (Note 2)||16*/30**|A|
||Continuous Rectified Forward Current @ TC< 135°C||23*/36**||
|IF,Max|Non−Repetitive Peak Forward Surge Current|TC= 25°C, 10�s|1000|A|
|||TC= 150°C, 10�s|900|A|
|IF,SM|Non−Repetitive Forward Surge Current|Half−Sine Pulse, tp= 8.3 ms|90|A|
|IF,RM|Repetitive Forward Surge Current|Half−Sine Pulse, tp= 8.3 ms|50|A|
|Ptot|Power Dissipation|TC= 25°C|165|W|
|||TC= 150°C|28|W|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +175|°C|
||TO247 Mounting Torque, M3 Screw||60|Ncm|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. EAS of 81 mJ is based on starting TJ = 25 ° C, L = 0.5 mH, IAS = 18 A, V = 50 V.
2. Limited by per device.
|
should not be assumed, damage may occur and reliability may be affected.
1. EASof 81 mJ is based on starting TJ= 25°C, L = 0.5 mH, IAS= 18 A, V = 50 V.
2. Limited by per device.|
should not be assumed, damage may occur and reliability may be affected.
1. EASof 81 mJ is based on starting TJ= 25°C, L = 0.5 mH, IAS= 18 A, V = 50 V.
2. Limited by per device.|||
|---|---|---|---|
|**Table 2. THERMAL CHARACTERISTICS**||||
|**Symbol**|**Parameter**|**Rating**|**Unit**|
|R�JC|Thermal Resistance, Junction−to−Case, Max.|0.91*/0.4**|°C/W|
|* Per Leg||||
** Per Device
**Table 3. OPERATING CHARACTERISTICS** (TC = 25 ° C, unless otherwise noted)
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|IF= 16 A, TC= 25°C|−|1.5|1.75|V|
|||IF= 16 A, TC= 125°C|−|1.6|2.0||
|||IF= 16 A, TC= 175°C|−|1.72|2.4||
|IR|Reverse Current|VR= 650 V, TC= 25°C|−|−|200|�A|
|||VR= 650 V, TC= 125°C|−|−|400||
|||VR= 650 V, TC= 175°C|−|−|600||
|QC|Total Capacitive Charge|V = 400 V|−|52|−|nC|
|C|Total Capacitance|VR= 1 V, f = 100 kHz|−|887|−|pF|
|||VR= 200 V, f = 100 kHz|−|95|−||
|||VR= 400 V, f = 100 kHz|−|72|−||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **PART MARKING AND ORDERING INFORMATION**
|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FFSH3065ADN−F155|FFSH3065ADN|TO−247 Long Lead|Tube|N/A|N/A|30 units|
**www.onsemi.com**
**2**
**FFSH3065ADN−F155**
## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C UNLESS OTHERWISE NOTED)
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30 10−5
25
TJ = 25 [o] C 10−6
20 TJ = 25 [o] C
TJ = 75 [o] C TJ = 175 [o] C T J = 175 [o] C
15 T J = 125 [o] C 10−7
10 TJ = 75 [o] C
T J = −55 [o] C 10−8 TJ = 125 [o] C
5
T J = −55 [o] C
0 10−9
0.0 0.5 1.0 1.5 2.0 2.5 200 300 400 500 600 650
VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
200 200
D = 0.1
160 160
120 D = 0.2 120
D = 0.3
80 D = 0.5 80
40 D = 0.7 D = 1 40
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC , CASE TEMPERATURE ( o C ) TC , CASE TEMPERATURE ( o C )
Figure 3. Current Derating Figure 4. Power Derating
80 10000
60
1000
40
100
20
0 10
0 200 400 600 650 0.1 1 10 100 650
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
, FORWARD CURRENT (A)IF
, REVERSE CURRENT (A)
IR
, POWER DISSIPATION (W)
, PEAK FORWARD CURRENT (A)IF PTOT
CAPACITANCE (pF)
, CAPACITIVE CHARGE (nC)
C
Q
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**Figure 5. Capacitive Charge vs. Reverse Voltage**
**Figure 6. Capacitance vs. Reverse Voltage**
**www.onsemi.com**
**3**
**FFSH3065ADN−F155**
## **TYPICAL CHARACTERISTICS** (TJ = 25 ° C UNLESS OTHERWISE NOTED)
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18
12
6
0
0 200 400 600 650
VR, REVERSE VOLTAGE (V)
J)
�
, CAPACITIVE ENERGY (
C
E
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**Figure 7. Capacitance Stored Energy**
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Figure 7. Capacitance Stored Energy
2
1 DUTY CYCLE−DESCENDING ORDER
0.5
0.1 PDM
0.2 t 1
t2
0.1
0.01 0.05 NOTES:
0.02 Z � JC (t) = r(t) x R � JC
0.01 R � JC = 0.91 [o] C/W
Peak TJ = PDM x Z � JC (t) + TC
SINGLE PULSE Duty Cycle, D = t1 / t2
0.001
10−6 10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
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**www.onsemi.com**
**4**
**FFSH3065ADN−F155**
**TYPICAL CHARACTERISTICS** (TJ = 25 ° C UNLESS OTHERWISE NOTED)
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L = 0.5mH
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**Figure 9. Unclamped Inductive Switching Test Circuit & Waveform**
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**TO−247−3LD** CASE 340CH ISSUE A
DATE 09 OCT 2019
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GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ � ”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13853G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−247−3LD PAGE 1 OF 1
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**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
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