# Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 650 V, 10 A, 25 nC
**URL**: https://novapart.co/products/FFSB1065B-F085/silicon-carbide-schottky-diode-elitesic-series
**SKU**: FFSB1065B-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €1.7400
**Stock**: 200+
**Lead Time**: 78 days (indicative)
## Description
Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:10A; Total Capacitive Charge Qc:25nC; Diode Case Style:TO-263; N
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | EliteSiC Series |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single |
| Average Forward Current | 10A |
| Total Capacitive Charge | 25nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2981082RL/)
**DATA SHEET www.onsemi.com**
## Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, D2PAK-2L
## FFSB1065B-F085
## **Description**
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
## **Features**
- Max Junction Temperature 175 C
- Avalanche Rated 49 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **Applications**
- Automotive HEV−EV Onboard Chargers
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Cathode Anode
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## **Schottky Diode**
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Cathode
Cathode
Anode
D [2] PAK2 (TO−263−2L)
CASE 418BK
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## **MARKING DIAGRAM**
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AYWWZZ
FFSB
1065B
A = Assembly Plant Code
YWW = Date Code (Year & Week)
ZZ = Lot Code
FFSB1065B = Specific Device Code
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## **ORDERING INFORMATION**
See detailed ordering and shipping information on page 2 of this data sheet.
- Automotive HEV−EV DC−DC Converters
Publication Order Number: **FFSB1065B−F085/D**
**1**
Semiconductor Components Industries, LLC, 2018 **February, 2023 − Rev. 4**
**FFSB1065B−F085**
**ABSOLUTE MAXIMUM RATINGS** (TC = 25C unless otherwise noted)
|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25C unless otherwise noted)|**AXIMUM RATINGS**(TC= 25C unless otherwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VRRM|Peak Repetitive Reverse Voltage||650|V|
|EAS|Single Pulse Avalanche Energy (Note 1)||49|mJ|
|IF|Continuous Rectified Forward Current @ TC< 25C||27|A|
||Continuous Rectified Forward Current @ TC< 146C||10||
|IF, Max|Non-Repetitive Peak Forward Surge Current|TC= 25C, 10�s|650|A|
|||TC= 150C, 10�s|570|A|
|IF,SM|Non-Repetitive Forward Surge Current
TC= 25C|Half-Sine Pulse, tp= 8.3 ms|45|A|
|Ptot|Power Dissipation|TC= 25C|79|W|
|||TC= 150C|13|W|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +175|C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. EAS of 49 mJ is based on starting TJ = 25C, L = 0.5 mH, IAS = 14 A, V = 50 V.
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max|1.9|C/W|
## **ELECTRICAL CHARACTERISTICS** (TC = 25C unless otherwise noted)
|**Symbol**|**Parameter**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|IF= 10 A, TC= 25C|−|1.38|1.7|V|
|||IF= 10 A, TC= 125C|−|1.6|2.0||
|||IF= 10 A, TC= 175C|−|1.72|2.4||
|IR|Reverse Current|VR= 650 V, TC= 25C|−|0.5|40|�A|
|||VR= 650 V, TC= 125C|−|1|80||
|||VR= 650 V, TC= 175C|−|2|160||
|QC|Total Capacitive Charge|V = 400 V|−|25|−|nC|
|C|Total Capacitance|VR= 1 V, f = 100 kHz|−|421|−|pF|
|||VR= 200 V, f = 100 kHz|−|46|−||
|||VR= 400 V, f = 100 kHz|−|35|−||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
## **ORDERING INFORMATION**
|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Top Marking**|**Package**|**Shipping***|
|FFSB1065B−F085|FFSB1065B|D2PAK2 (TO−263−2L)
(Pb-Free / Halogen Free)|800 / Tape & Reel|
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
**www.onsemi.com**
**2**
**FFSB1065B−F085**
## **TYPICAL CHARACTERISTICS**
(TJ = 25C UNLESS OTHERWISE NOTED)
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20
TJ = −55 [o] C T J = 175 [o] C
TJ = 25 [o] C TJ = 125 [o] C
15
TJ = 75 [o] C
10
5
0
0 1 2 3 4
VF, FORWARD VOLTAGE (V)
, FORWARD CURRENT (A)
IF
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**Figure 1. Forward Characteristics**
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10−5
10−6
TJ = 175 [o] C
10−7
TJ = 125 [o] C
10−8 TJ = 75 [o] C
TJ = 25 [o] C
10−9 T J = −55 [o] C
200 300 400 500 600 650
VR, REVERSE VOLTAGE (V)
, REVERSE CURRENT (A)
IR
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**Figure 2. Reverse Characteristics**
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120
D = 0.1
90
D = 0.2
60
D = 0.3
D = 0.5
30
D = 0.7 D = 1
0
25 50 75 100 125 150 175
TC , CASE TEMPERATURE (�C)
Figure 3. Current Derating
40
30
20
10
0
0 100 200 300 400 500 600 650
VR, REVERSE VOLTAGE (V)
, PEAK FORWARD CURRENT (A)IF
, CAPACITIVE CHARGE (nC)
C
Q
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**Figure 5. Capacitive Charge vs. Reverse Voltage**
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100
80
60
40
20
0
25 50 75 100 125 150 175
TC , CASE TEMPERATURE (�C)
, POWER DISSIPATION (W)
TOT
P
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**Figure 4. Power Derating**
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1000
100
10
0.1 1 10 100 650
VR, REVERSE VOLTAGE (V)
CAPACITANCE (pF)
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**Figure 6. Capacitance vs. Reverse Voltage**
**www.onsemi.com**
**3**
**FFSB1065B−F085**
## **TYPICAL CHARACTERISTICS**
(TJ = 25C UNLESS OTHERWISE NOTED)
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10
8
6
4
2
0
0 100 200 300 400 500 600 650
VR, REVERSE VOLTAGE (V)
J)
�
, CAPACITIVE ENERGY (
c
E
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## **Figure 7. Capacitance Stored Energy**
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2
DUTY CYCLE−DESCENDING ORDER
1
D=0.5
0.1 PDM
D=0.2
D=0.1 t 1
D=0.05 t2
0.01 D=0.02 NOTES:
D=0.01 Z � JC(t) = r(t) x R � JC
R � JC = 1.9 � C/W
SINGLE PULSE Peak T J = P DM x Z � JC (t) + T C
Duty Cycle, D = t1/t2
1E−3
10−6 10−5 10−4 10−3 10−2 10−1 1
t, RECTANGULAR PULSE DURATION (sec)
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
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**Figure 8. Junction-to-Case Transient Thermal Response Curve**
**www.onsemi.com**
**4**
**FFSB1065B−F085**
## **TEST CIRCUIT AND WAVEFORMS**
L = 0.5 mH R < 0.1 � VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL))
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L R
+
CURRENT
Q1 SENSE VDD
DUT VDD
−
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VAVL
IL IL
I V
t0 t1 t2 t
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**Figure 9. Unclamped Inductive Switching Test Circuit & Waveform**
**www.onsemi.com**
**5**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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D [2] PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
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GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ � ”,
may or may not be present. Some products
may not follow the Generic Marking.
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**DOCUMENT NUMBER: 98AON93788G DESCRIPTION: D[2] PAK2 (TO−263−2L)**
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Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2018
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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## Links
- [View this product on Novapart](https://novapart.co/products/FFSB1065B-F085/silicon-carbide-schottky-diode-elitesic-series)
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- [Supplier page](https://es.farnell.com/on-semiconductor/ffsb1065b-f085/sic-schottky-diode-650v-10a-to/dp/2981082RL)
---
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