# Bipolar Transistor Array, Dual NPN, 160 V, 200 mA, 200 mW

![Product image](https://novapart.co/image/farnell:3368912/)

**URL**: https://novapart.co/products/FFB5551/bipolar-transistor-array-dual-npn-160-v-200-ma-mw
**SKU**: FFB5551
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.2510
**Stock**: 200+
**Lead Time**: 373 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2024) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 200mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SC-70 |
| Transition Frequency Npn | 300MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 30hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 200mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 160V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3368912/)

## **FFB5551 Dual-Chip NPN General-Purpose Amplifier** 

## **Features** 

- This device is designed for general-purpose high voltage amplifier. 

**==> picture [460 x 430] intentionally omitted <==**

**----- Start of picture text -----**<br>
• E1 is Pin 1.<br>E2<br>B2<br>E2 C2<br>C1<br>B2 B1<br>C2<br>B1 C1 E1<br>E1 SC70-6<br>¢ Mark: .P1 8<br>Figure 1. Device Package  Figure 2. Internal Connection<br>Ordering Information<br>Part Number Top Mark Package Packing Method<br>FFB5551 P1 SC70 6L Tape and Reel<br>—S_<br>Absolute Maximum Ratings [(1),(2)]<br>Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-<br>ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-<br>tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The<br>absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.<br>Symbol Parameter Value Unit<br>VCEO Collector-Emitter Voltage  160 V<br>VCBO Collector-Base Voltage 180 V<br>VEBO Emitter-Base Voltage 6.0 V<br>IC Collector Current - Continuous 200 mA<br>TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C<br>=<br>Notes:<br>1. These ratings are based on a maximum junction temperature of 150 ° C.<br>**----- End of picture text -----**<br>


**==> picture [460 x 32] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number Top Mark Package Packing Method<br>FFB5551 P1 SC70 6L Tape and Reel<br>—S_<br>**----- End of picture text -----**<br>


2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. 

© 2003 Semiconductor Components Industries, LLC. October-2017,Rev. 2 

Publication Order Number: FFB5551/D 

## **Thermal Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Max.**|**Unit**|
|---|---|---|---|
|PD|Total Device Dissipation|200|mW|
||Derate Above 25°C|1.6|mW/°C|
|||||
|RθJA|Thermal Resistance, Junction-to-Ambient|625|°C/W|



## **Note:** 

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|BVCEO|Collector-Emitter Breakdown Voltage(4)|IC= 1.0 mA, IB= 0|160||V|
|BVCBO|Collector-Base Breakdown Voltage|IC= 100μA, IE= 0|180||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE= 10μA, IC= 0|6.0||V|
|ICBO|Collector Cut-Off Current|VCB= 120 V, IE= 0||50|nA|
|||VCB= 120 V, IE= 0,<br>TA= 100°C||50|μA|
|IEBO|Emitter Cut-Off Current|VEB= 4.0 V, IC= 0||50|nA|
|hFE|DC Current Gain(4)|VCE= 5 V, IC= 1.0 mA|80|||
|||VCE= 5 V, IC= 10 mA|80|250||
|||VCE= 5 V, IC= 50 mA|30|||
|VCE(sat)|Collector-Emitter Saturation Voltage(4)|IC= 10 mA, IB= 1.0 mA||0.15|V|
|||IC= 50 mA, IB= 5.0 mA||0.20||
|VBE(sat)|Base-Emitter Saturation Voltage(4)|IC= 10 mA, IB= 1.0 mA||1.0|V|
|||IC= 50 mA, IB= 5.0 mA||1.0||
|fT|Current Gain Bandwidth Product|VCE= 10 V, IC= 10 mA,<br>f = 100 MHz|100|300|MHz|
|Cobo|Output Capacitance|VCB= 10 V, IE= 0,<br>f = 1.0 MHz||6.0|pF|



## **Note:** 

4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

www.onsemi.com 

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## **Typical Performance Characteristics** 

**==> picture [396 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ta=125 0 C<br>IC=10IB<br>100 10 Ta=25 0 C<br>Ta=250C<br>Ta=-400C<br>10<br>1<br>Ta=125 0 C<br>1 Ta=-400C Ta=25 0 C<br>0.1<br>0.1<br>1E-4 1E-3 0.01 0.1 1 1E-3 0.01 0.1<br>IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT<br>Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage<br>10 0.50<br>ITa=25 C =10I B0 C 0.450.40 Ta=25V CE =5V0C<br>0.35<br>0.30<br>Ta=-400C Ta=250C<br>1 0.25<br>0.20 Ta=25 0 C<br>Ta=1250C 0.15 Ta=1250C<br>0.10 Ta=-40 0 C<br>0.05<br>0.1 0.00<br>1E-3 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>, DC CURRENT GAIN<br>FE<br>h<br>(SAT)[V], SATURATION VOLTAGE<br>CE<br>V<br>(SAT)[V], SATURATION VOLTAGE [A], COLLECTOR CURRENTIC<br>BE<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Collector-Emitter Saturation Voltage** 

**Figure 5. Base-Emitter Saturation Voltage** 

**Figure 6. Base-Emitter On Voltage** 

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## **Physical Dimensions** 

**==> picture [332 x 442] intentionally omitted <==**

**----- Start of picture text -----**<br>
SYMM<br>CL<br>2.00±0.20 A 0.65<br>0.50 MIN<br>6 4 B<br>PIN ONE<br>1.25±0.10 1.90<br>1 3<br>(0.25) 0.300.15 0.40 MIN<br>0.10 A B 1.30<br>0.65<br>LAND PATTERN RECOMMENDATION<br>1.30<br>1.00 SEE DETAIL A<br>0.80<br>1.10<br>0.80<br>0.10 0.10 C<br>C 0.00<br>2.10±0.30<br>SEATING<br>PLANE<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE A) THIS PACKAGE CONFORMS TO EIAJ<br>PLANE SC-88, 1996.<br>(R0.10)<br>B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.25    C) DIMENSIONS DO NOT INCLUDE BURRS<br>0.10        OR MOLD FLASH.<br>0.20 D) DRAWING FILENAME: MKT-MAA06AREV6<br>0.46 30°<br>0.26 0°<br>SCALE: 60X<br>**----- End of picture text -----**<br>


**Figure 7. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE** 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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