# IGBT Module, Dual, 875 A, 1.5 V, 20 mW, 175 °C, Module

![Product image](https://novapart.co/image/farnell:4228367/)

**URL**: https://novapart.co/products/FF900R12ME7PB11BPSA1/igbt-module-dual-875-a-15-v-20-mw-175-c
**SKU**: FF900R12ME7PB11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €173.2700
**Stock**: 10+
**Lead Time**: 176 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 Series |
| Igbt Technology | IGBT 7 |
| Igbt Termination | Press Fit |
| Power Dissipation | 20mW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 875A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4228367/)

## FF900R12ME7P_B11 

VCES = 1200V IC nom = 900A / ICRM = 1800A 

- Hochleistungsumrichter 

- • Hybrid-Nutzfahrzeuge • Motorantriebe • Servoumrichter • USV-Systeme 

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- Trenchstop[TM] 

- • VCEsat mit 

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- Standardgehäuse 

- Thermisches Interface Material bereits aufgetragen 

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- 

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- Trenchstop[TM] 

- • VCEsat with 

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Datasheet www.infineon.com 

2020-04-24 

FF900R12ME7P_B11 

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## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|900|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 45°C, Tvj max= 175°C|ICDC|875|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 900 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,65<br>1,75|1,80|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 18,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||14,3||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||122||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,72||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,1|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,41<br>0,46<br>0,49||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,10<br>0,11<br>0,12||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,55<br>0,63<br>0,69||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,11<br>0,23<br>0,33||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 900 A, VCE= 600 V, Lσ= 25 nH<br>di/dt = 6200 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||89,0<br>138<br>170||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 900 A, VCE= 600 V, Lσ= 25 nH<br>du/dt = 3000 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||89,0<br>130<br>158||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤6 µs,|ISC||3200<br>3000||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,0716|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|900|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|35000<br>30000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,80<br>1,70<br>1,65|2,05|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||389<br>511<br>578||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||65,0<br>127<br>171||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||29,0<br>52,0<br>68,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,126|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|3,4<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||15,0<br>13,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,80||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



Tvjop > 150 °C ist nur im Überlastbetrieb zulässig. Detailierte Angaben sind AN 2018-14 zu entnehmen. 

Tvjop > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14. Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
1800 1800<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 175°C VGE = 15V<br>VGE = 13V<br>1500 1500 VGE = 11V<br>VGE = 9V<br>1200 1200<br>900 900<br>600 600<br>300 300<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.51� Ω ,�RGoff�=�0.51� Ω ,�VCE�=�600�V 

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1800 1000<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 175°C<br>Tvj = 175°C 900 E off , T vj  = 125°C<br>Eoff, Tvj = 175°C<br>1500<br>800<br>700<br>1200<br>600<br>900 500<br>400<br>600<br>300<br>200<br>300<br>100<br>0 0<br>4 5 6 7 8 9 10 11 12 13 14 0 300 600 900 1200 1500 1800<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =900A,V CE =600V VGE =415V,R Gon =051 Ω ,R Goff =051 Ω ,V CE =600V<br>600 10<br>Fe<br>tdon<br>550 t r<br>t doff<br>t f<br>/ 7, Ef<br>500<br>4 i<br>450 7 7 ee ee [ee] ee<br>400 1<br>/777 pe.SALes<br>350 7 Po a enn nnn]<br>a<br>300<br>— —_—<br>250 _— T ~<br>— [aa]<br>200 0,1<br>ey ——————<br>150 Seer Lhe es ><br>100 Eon, Tvj = 125 ° C<br>Eon, Tvj = 175°C<br>50 E E off off , T , T vj vj  = 125°C  = 175 ° C<br>0 0,01<br>0 1 2 3 4 5 6 0 300 600 900 1200 1500 1800<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =+15V,1 C =900A,V CE =600V VGE =+15V, | c =900A,V CE =600V,T vj = 25°C<br>10 a a a a 7<br>a tdon ee dv/dt-on at 1/10 × Ic<br>t r dv/dt-off at Ic<br>| a<br>t doff<br>———— t f 6<br>5<br>\<br>1<br>--a \\<br>4<br>3 ><br>eaee PAK<br>7 N<br>NX<br>0,1  N<br> N<br>2 N<br>==—=———— ~N; |<br>1<br>0,01 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>RG [ Ω ] RG [Ohm]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>


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## **(RBSOA)** 

## ZthJH 

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**----- Start of picture text -----**<br>
1<br>ZthJH : IGBT<br>ee tt<br>0,1<br>PEa<br>0,01<br>Pe — HHHE<br>e720 VA<br>i: 1 2 3 4<br>ri[K/W]: 0,0039 0,0259 0,0292 0,0126<br>τ i[s]: 0,00215 0,0428 0,277 1,702<br>0,001 UIEEE|<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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IC =f(V CE)<br>VGE ee V,R Goff =0.51 Ω ,T vj =175°C<br>2200<br>IC, Modul<br>2000 IC, Chip<br>1800<br>1600<br>1400<br>SEE<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 200 400 600 800 1000 1200 1400<br>VCE  [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


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C=f(V CE) VGE =f(Q G)<br>VGE i OV,T vj = 25°C, f = 100kHz IC = 905 A, T vj =25°C<br>1000 15<br>| CC ies oes a a 13 VCE =  600 V<br>C res<br>=_=======—=<br>11<br>100 9<br>BEE EEE<br>7<br>=========—<br>5<br>10 3<br>SS ee ee<br>ee -11<br>ee<br>=<br>1 SahaPSseo -3<br>-5<br>-7<br>0,1 sanmenenen -9<br>-11<br>-13<br>0,01 HEE EEE eer -15<br>0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>


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IF =f(V F) Erec =fil F)<br>RGon =0.51 Ω ,V CE =600V<br>1800 80<br>Tvj = 25°C / [/] Erec, Tvj = 125°C<br>Tvj = 125°C | Erec, Tvj = 175°C<br>Tvj = 175°C i/i 70<br>/<br>1500<br>/ [/]<br>/<br>/ 60<br>///<br>/ /<br>1200 /<br>i/ /<br>// 50 /<br>// [/]<br>i /<br>900 ‘] 1 40 7<br>//<br>/ /<br>1/ /<br>// 30<br>7 7<br>600<br>20<br>300<br>10<br>0 aan 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 300 600 900 1200 1500 1800<br>VF [V] IF [A]<br>Schaltverluste Diode, Wechselrichter (typisch) Transienter Warmewiderstand Diode, Wechselrichter<br>switching losses Diode, Inverter (typical) transient thermal impedance Diode, Inverter<br>Erec =f(R G) ZthJH =f (t)<br>IF =900A,V CE =600V<br>80 1 aee<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 175°C<br>HE | HEHeee<br>70<br>\<br>\<br>60 \<br>\<br>\<br>\ 0,1<br>50<br>‘<br> N<br>} — Alli=<br>40<br>30<br>0,01<br>20<br>10 i: 1 2 3 4<br>ri[K/W]: 0,0075 0,0453 0,0511 0,0221<br>τ i[s]: 0,00215 0,0428 0,277 1,702<br>0 0,001<br>0 1 2 3 4 5 6 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IF E [mJ]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
j Terminals1 A D E KennzeichnungsflächeLabel-side<br>A<br>152±0,5<br>C 122±0,5 E<br>j 0,4 A D E j n 0,4 A B C<br>9 8 7 6 5<br>28,75<br>25<br>10 4 j 4x n 0,6 A D E<br>11<br>Y<br>X 0<br>11 3<br> (min. 100,0)<br> (min. 78,0) 11<br>25<br>28,75<br>B 55 1 screw recommendation: 2Schraubenempfehlung: ( n 5,5) j 2x 0,4 A D E<br>D EJOT PT K 25x10 WN1451<br>EJOT DELTA PT 25x10 WN5451<br>j n 0,4 A B C<br>120,8305<br>( n 5,5)<br>( n 5,5)<br>24,444°<br>(3,5)<br>(20,5) 17<br>(6,5)<br>n 6,4)(<br>62,5±0,2 62±0,2  (min. 38,0)  (min. 20,0)<br>25  4x M6<br>n 5,5)(<br>68,5 55 47,25 0 47,25 55 68,5<br>**----- End of picture text -----**<br>


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M<br>7x  n 1 [+0,09] -0,06 j 0,05 M-M 4x  n 2,8 [+0,1] -0 j 0,4 M-M<br>7x 4x<br>29,2<br>28,75<br>Y<br>X 0<br>28,75<br>29,2<br>- PCB: Durchmesser des metallisierten Loches<br>47,25 40 17,15 13,33 0 9,53 13,34 36,19 40 47,25<br>**----- End of picture text -----**<br>


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85<br>88<br>111<br>119<br>122<br>24,6 28 49,5 59<br>**----- End of picture text -----**<br>


restricted area for Thermal Interface Material 

10 

V�2.0 2020-04-24 

Datasheet 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FF900R12ME7PB11BPSA1/igbt-module-dual-875-a-15-v-20-mw-175-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff900r12me7pb11bpsa1/igbt-module-1-2kv-900a-module/dp/4228367)
---

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