# IGBT Module, Dual, 900 A, 1.75 V, 5.1 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:1833552/)

**URL**: https://novapart.co/products/FF900R12IE4/igbt-module-dual-900-a-175-v-51-kw-150-c
**SKU**: FF900R12IE4
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €357.0000
**Stock**: 10+

## Description

Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Tra

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 10Pins |
| Product Range | - |
| Igbt Technology | - |
| Igbt Termination | Tab |
| Power Dissipation | 5.1kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 900A |
| Power Dissipation Pd | 5.1kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 900A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1833552/)

IGBT-Module IGBT-modules 

## FF900R12IE4 

VCES = 1200V IC nom = 900A / ICRM = 1800A 

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1 

> IGBT-ModuleIGBT-modules FF900R12IE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF900R12IE4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AC<br>approvedby:MS<br>dateofpublication:2013-11-05<br>revision:2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>900<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>5,10<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,05<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 33,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,40<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,2<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>54,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>3,00<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,20<br>0,22<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,66<br>0,75<br>0,79<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,09<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Eon<br>55,0<br>70,0<br>80,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>85,0<br>120<br>130<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>3600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>29,5 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>14,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FF900R12IE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|900|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|91,0<br>88,0<br>|kA²s<br>kA²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,30|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||500<br>660<br>710||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||90,0<br>150<br>195||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||40,0<br>80,0<br>90,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||53,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||25,5||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4 

3 

IGBT-Module IGBT-modules 

## FF900R12IE4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||4,50||K/kW|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|18<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,30||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||825||g|



4 

IGBT-Module IGBT-modules 

## FF900R12IE4 

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IC CE) IC CE)<br>VGE “isV Tvj =150°C<br>1800 1800<br>[pee Tvj = 25°C el [ VGE = 19V pees<br>1600 Tvj = 125°C 1600 VGE = 17V<br>(i Tvj = 150°C VGE = 15V el a<br>[ee n ro VGE = 13V re ee<br>1400 a 1400 I VGE = 11V ee eae<br>VGE = 9V<br>ee ee ee ee eee I i ire<br>a ee ee ee [eee<br>1200 1200<br>a ee ee ee ee es ee<br>1000 eea ee e e eee eeee 1000 re P eee|Pe<br>800 ee ee ee eee 800 ee ee<br>a ee ee ee eee e ee<br>ee ee ee ee e<br>600 ee 600 ee<br>aa ee ee ee eene eee<br>400 400<br>Pt ee eee ee ee Ree<br>200 ee eedtee ee ee 200 Pe e 7r e e<br>0 P er | 0 74 eee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE a oov VGE eV R Gon C43 Ω ,R Goff =1.5 Ω ,V CE =600V<br>1800<br>Tvj = 25°C Eon, Tvj = 125°C<br>1600 I Tvj = 125°C t re AT 250 Eon, Tvj = 150°C<br>F Tvj = 150°C oo Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>e s eo | ETLEEL<br>1400 a a a A 200 BERREE Lk<br>aee<br>1200<br>a ee A N<br>1000  ee) 150<br>ae<br>800 reee ee ee ee ee Oe RDLAs ZANDECaANE<br>100<br>i eeAe eeBY<br>600 ee Ge an<br>ee ee ee ee ee Te<br>ee ee ee<br>ee<br>400<br>50<br>ee A ee Pee eee<br>ee ee eee Joe ae<br>200 e/a eee<br>ee ee ee ee ee Za<br>p ee<br>0 oe 0 OLAA<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200 1400 1600 1800<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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## IGBT-Module IGBT-modules 

## FF900R12IE4 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =900A,V CE =600V<br>450 100<br>SEE Po<br>Eon, Tvj = 125°C i ZthJC : IGBT eee<br>- Eon, Tvj = 150°C Wide HH—a oeEE HH} | tH<br>400<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>350 Ia W y | LeA a ee A ee l<br>PLL raa EH H<br>300 ee 10 CI T<br>EEE WAEEE PEEeee ie eel eh eT<br>250200 PPTL LL LAZAL(  EL |a nn<br>ra PAI TI PE TET<br>150 EEE 1<br>ii s of/ —|—aa LLL EE = EMITPEre ee HH EH<br>100 a eel<br>Wa caaeeeeeeel |<br>i:    1    2    3    4<br>50 ri[K/kW]:   1,2    6    20    2,3<br>τ i[s]:    0,0008   0,013   0,05   0,6<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE 0 V,R Goff =1.5 Ω ,T vj =150°C<br>2000 [peer IC, Modul Ee Os es 1800 7 Tvj = 25°C<br>1800 IC, Chip 1600 Tvj = 125°C<br>f= F Tvj = 150°C E<br>[——T | | | a<br>1600<br>————SS ce 1400 ee<br>1400<br>pf} {|_| 14} 1200 es<br>ee a oo<br>1200<br>a 1000 oT<br>ee ee ee ee ee re ee ee ee ee<br>1000<br>800<br>800 a a ee es es<br>a ee 600 es es 7<br>600<br>Pf fF PP EY eee/a<br>a)<br>400<br>400<br>pt} {| | _1 4} _ a 7 A<br>200 poee ee ee ee ee ee 200 A:<br>0 es 0 a aa eee eee<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## IGBT-Module IGBT-modules 

## FF900R12IE4 

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Erec = fil F) Erec =f(R G)<br>RGon =1.3 Ω ,V CE =600V IF =900A,V CE =600V<br>120<br>120 = Erec, T C vj = 125°C es E Erec, Tvj = 125°C o<br>E Erec, Tvj = 150°C E 110 fe Erec, Tvj = 150°C<br>110<br>|Pt tT | | tt PEPE 100 eeeYT | | [{|<br>100 Pt tT | tT tp tt eet Ff<br>Pot t T 90 x<br>90 Pt ft ft | | | tT ey ee x<br>i SENT CREeeeeeeee<br>80<br>80<br>Pt | | | | | tet ep yt tt i x<br>POC ae PET N GREE EEE<br>70<br>70 Pt tt | tee pe NOS<br>PEPE<br>60<br>60 P| | | iyPrPTT tTEEE PP KORbs PSE<br>per SEES<br>50<br>50<br>Pt tT eevee | tT tt tT tT | TT > i<br>Oe 74 40 PTT TT yy) ye KEES<br>40 Pi yA tT | Pt tT tT tT |<br>PRR<br>30 PLA | | | | tT tT TT 30<br>BARRE EEE LO<br>20 Py | {| | | | tT tT TT 20<br>10 Pt f {| | | | ft | tt tt 10<br>PEREEEEREEREEEER = ee<br>0 ptPt tT| |PP| te ft teeeete tt 0 Py TL ETL TLE LEE<br>0 200 400 600 800 1000 1200 1400 1600 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC = f (t) R=f(T)<br>100 100000<br>_— i ZthJC : Diode oo ee 1 I= Rtyp a ————————<br>( e e (cr e r<br>PT TT ee TE T se<br>2 || a ee ee ee<br>PCA, ETE ET) PF | ET<br>IIE KE<br>10 10000<br>Pt tt tt Se<br>a<br>7| Tei tT i ee Ns se<br>rT TT TT Ne ee ee<br>Cen ron) ERaN<br>a<br>1 1000<br>Pt et te jp} |__| | |_|<br>eeeee aa<br>Po eee a<br>rT TT TT TT se<br>i:    1    2    3    4<br>ri[K/kW]:   4,5    12,7    35,4   0,9<br>τ i[s]:    0,0008   0,013   0,05   0,6<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/kW] R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FF900R12IE4<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>


prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4 

8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF900R12IE4 

## **Nutzungsbedingungen** 

## application. 

9 



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- [View this product on Novapart](https://novapart.co/products/FF900R12IE4/igbt-module-dual-900-a-175-v-51-kw-150-c)
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- [Supplier page](https://es.farnell.com/infineon/ff900r12ie4/igbt-h-b-ntc-1200v-900a-primepa/dp/1833552)
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