# IGBT Module, Dual, 930 A, 2 V, 4.15 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726150/)

**URL**: https://novapart.co/products/FF650R17IE4BOSA1/igbt-module-dual-930-a-2-v-415-kw-150-c
**SKU**: FF650R17IE4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €329.8900
**Stock**: 10+
**Lead Time**: 281 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:930A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:4.15kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 2 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 4.15kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 930A |
| Power Dissipation Pd | 4.15kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 930A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726150/)

IGBT-模块 IGBT-modules 

## FF650R17IE4 

VCES = 1700V IC nom = 650A / ICRM = 1300A 

## **典型应用** 

- 三电平应用 

- 辅助逆变器 

- 大功率变流器 

- 电机传动 

- 风力发电机 

- 3-Level-Applications 

- 

- 

- 

- 

## **电气特性** 

- 

- 高直流电压稳定性 

- • 高电流密度 • 低开关损耗 

- T 

- CEsat 

- 

- 

- 

- 

- T 

- CEsat 

## **机械特性** 

- 

- 高爬电距离和电气间隙 

- 高功率循环和温度循环能力 

- • 高功率密度 

- • 铜基板 • 标封装 

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- 

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1 

> IGBT-模块IGBT-modules FF650R17IE4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF650R17IE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:TA<br>approvedby:PL<br>dateofpublication:2013-11-05<br>revision:3.3<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>650<br>930<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1300<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>4,15<br>kW<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 650 A, VGE= 15 V<br>IC= 650 A, VGE= 15 V<br>IC= 650 A, VGE= 15 V<br>VCE sat<br>2,00<br>2,35<br>2,45<br>2,45<br>2,80<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 24,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>7,00<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,3<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>54,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,70<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,55<br>0,60<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,09<br>0,11<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 2,7Ω<br>td off<br>1,00<br>1,25<br>1,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 650 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 2,7Ω<br>tf<br>0,29<br>0,49<br>0,57<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 650 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 5000 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>205<br>300<br>320<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 650 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 2,7Ω<br>Eoff<br>140<br>205<br>230<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2700<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>36,0 K/kW<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>14,0<br>K/kW<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-模块IGBT-modules FF650R17IE4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|650|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1300|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|70,5|||kA²s|
|最大损耗功率<br>Maximumpowerdissipation|Tvj= 125°C|PRQM|650|||kW|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 650 A, VGE= 0 V<br>IF= 650 A, VGE= 0 V<br>IF= 650 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,95<br>1,95|2,25<br>2,35|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 650 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||695<br>760<br>805||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 650 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||160<br>265<br>310||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 650 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||76,0<br>135<br>160||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||71,5|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||27,0||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�TA date�of�publication:�2013-11-05 approved�by:�PL revision:�3.3 

3 

IGBT-模块 IGBT-modules 

## FF650R17IE4 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||33,0<br>33,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|19,0<br>19,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||4,50|K/kW|
|杂散电感,模块||LsCE||18|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>0,30<br>Tstg<br>-40<br>150<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|BeeM4AHEAD AVAY OV EAETR<br>Screw M4<br>- Mounting<br>according to valid application note<br>teeM8IBAA SEABST ee<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-<br>2,1<br>10|Nm<br>Nm|
|重量<br>Weight||G||825|g|



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#£748&748&& / Technical Technical Information IGBT-模块IGBT-modules IGBT-modules ~~easestemsstems~~ 

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## IGBT-模块 IGBT-modules 

## FF650R17IE4 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =650A,V CE =900V<br>1000 100<br>E — on, Tvj = 150°C 7 S ZthJC : IGBT SS<br>900 Eon, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>Eoff, Tvj = 125°C aa |<br>800<br>n nPe4 Ane P MEC  e T<br>700<br>UAE<br>10 LEE El<br>600500 Py LP Perth Et EHH<br>WA r | VAT TTTTTT<br>PALATE ET<br>400 pO A<br>1<br>300 At Ae<br>aee ee |<br>ee a eee<br>200<br>i:    1    2    3    4<br>100 eeee ed ee en r τ ii[K/kW]:   [s]:    1,2   0,0008   5,5   0,013    eel 25,5   0,05   3,8   0,6<br>a ea Il<br>0 e e 0,1 |<br>0 2 4 6 8 10 12 14 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE ee V,R Goff =2.7 Ω ,T vj =150°C<br>1400 Cc 1300 a 7,<br>IC, Modul Tvj = 25°C<br>IC, Chip 1200 Tvj = 125°C<br>1200 1100 Tvj = 150°C<br>1000<br>1000<br>Pitti iT) 900 R R A A<br>800<br>800<br>700<br>600<br>600<br>500<br>Se 400 a<br>400<br>300<br>200 PTE ee 200  eeeFere ereee<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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#2743 IGBT-模块 IGBT-modules B / Technical Information FF650R17IE4 

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E arin rec F)  losses Diode, Inverter (typical) E owt rec G  losses )  Diode, Inverter (typical)<br>RGon =1.8 Ω ,V CE =900V IF =650A,V CE =900V<br>220 220<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>200 —= Erec, Tvj = 125°C Jet] | _ 200 m—a E L rec, Tvj = 125°C o]<br>180 po 180<br>160 Pot de T C 160<br>140 P| | ed 140 Pt |<br>i ELeehe e TOe| Nea eee ee<br>120 120<br>Ae ONY<br>100 100<br>pf po RN<br>80 80<br>Paaaeee eee<br>60 60<br>40 40<br>20 20<br>0 0<br>0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14<br>IF [A] RG [ Ω ]<br>PAM RS EES STK —MB, LEE (SOA)<br>Z transient thJC  thermal impedance Diode, Inverter I safe R  operation R)  area Diode, Inverter (SOA)<br>of Tvj Sor<br>1000<br>(ene a<br>$ ZthJC : Diode F SIP 1400 [ees IR, Modul oe<br>1200<br>a a a ll ee ek<br>100 1000<br>PEE<br>CUpT AIINE ATM LTA (LMT n e<br>800<br>600<br>Se ae eee ee<br>10<br>se ES<br>PFI EET 400 P| | | | ft tt<br>i:    1    2    3    4    200<br>ri[K/kW]:   4,5    17    45    5<br>τ i[s]:    0,0008   0,013   0,05   0,6<br>a | PF | [ | | ft tft yy<br>LM ioc eee<br>1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


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FF650R17IE4 

IGBT-模块 IGBT-modules 

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100000<br>H— Rtyp Et<br>DR re r<br>E e ee<br>a<br>a eeee<br>10000<br>KE tT | ee eee<br>SS —————<br>ER Ns es es ss<br>a Ne ee se es ee<br>PN<br>pp Nf<br>1000 ERNE<br>—————<br>Po NN<br>a<br>a<br>eeee ee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF650R17IE4<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>prepared�by:�TA date�of�publication:�2013-11-05<br>approved�by:�PL revision:�3.3<br>**----- End of picture text -----**<br>


9 

IGBT-模块 IGBT-modules 

## FF650R17IE4 

## **使用条件和条款** 

使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 

保留产品规格书的修改权 

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## Links

- [View this product on Novapart](https://novapart.co/products/FF650R17IE4BOSA1/igbt-module-dual-930-a-2-v-415-kw-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff650r17ie4bosa1/igbt-module-n-ch-1-7kv-930a/dp/2726150)
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