# IGBT Module, Dual, 995 A, 1.75 V, 4.05 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3889195/)

**URL**: https://novapart.co/products/FF600R12ME4B11BPSA2/igbt-module-dual-995-a-175-v-405-kw-150-c
**SKU**: FF600R12ME4B11BPSA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €189.8100
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 Series |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Solder |
| Power Dissipation | 4.05kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 995A |
| Power Dissipation Pd | 4.05kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 995A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3889195/)

IGBT-Module IGBT-modules 

## FF600R12ME4_B11 

VCES = 1200V IC nom = 600A / ICRM = 1200A 

- Hochleistungsumrichter 

- • Motorantriebe 

- Servoumrichter 

- USV-Systeme 

- • Windgeneratoren 

   - 

   - 

   - 

   - 

   - 

- CEsat 

- • T yjop = 150°C • VCEsat mit 

   - CEsat 

   - • T 

   - VCEsat 

- 

- 

- Standardgehäuse 

- 

- 

- 

1 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FF600R12ME4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF600R12ME4_B11<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CU<br>approvedby:MK<br>dateofpublication:2013-11-05<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>600<br>995<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>4050<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 23,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,40<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,2<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>37,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>2,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,16<br>0,21<br>0,21<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,09<br>0,09<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,48<br>0,61<br>0,65<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,07<br>0,11<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 5100 A/µs (Tvj= 150°C)<br>RGon= 1,5Ω<br>Eon<br>62,5<br>83,0<br>90,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3700 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>47,0<br>72,0<br>79,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,037 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,035<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FF600R12ME4_B11 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|40000<br>37500<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||290<br>420<br>450||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||62,0<br>115<br>130||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||22,0<br>44,0<br>51,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,065|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,039||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CU date�of�publication:�2013-11-05 approved�by:�MK revision:�2.1 

3 

IGBT-Module IGBT-modules 

## FF600R12ME4_B11 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||14,5<br>13,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||12,5<br>10,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,00||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschllsse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



4 

IGBT-Module IGBT-modules 

## FF600R12ME4_B11 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>1200 a | , 7 1200 es|<br>Tvj = 25°C a ra VGE = 19V 7<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>1000 1000 VGE = 13V<br>VGE = 11V<br>Ae VGE = 9V : / /<br>800 800<br>fe / : a °<br>Me / : / /.<br>600 600<br>7, vA |<br>J<br>400 400<br>/<br>a<br>200 200<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =1.5 Ω ,V CE =600V<br>1200 400<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 350 Eoff, Tvj = 125°C<br>1000 Eoff, Tvj = 150°C<br>300<br>800<br>250<br>600 200<br>150 Ze<br>400<br>100<br>ff Po ee<br>200<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FF600R12ME4_B11 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =600A,V CE =600V<br>400 _—— 0,1 a<br>Eon, Tvj = 125°C ; se ZthJC : IGBT eT<br>Eon, Tvj = 150°C<br>350 EEoffoff, T, Tvjvj = 125°C = 150°C 7, wa aaa ee |<br>ee ) F R EE<br>300<br>| : PL<br>250<br>aa Zee HHP<br>200150 aeyVAJ)t| | |. 0,01 pPAa T  TA|ET|<br>100<br>tt |)<br>i:    1    2    3    4<br>50 ri[K/W]:   0,0038   0,0312   0,0001   0,002<br>τ i[s]:    0,0007   0,0247   0,05    3,4847<br>0 0,001<br>0 2 4 6 8 10 12 14 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **(RBSOA)** 

IF F) 

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**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =415V,R Goff =1.5 Ω ,T vj =150°C<br>1300 1200<br>IC, Modul Tvj = 25°C<br>1200 IC, Chip Tvj = 125°C<br>[= J a lf<br>Tvj = 150°C<br>1100 1000<br>1000<br>900<br>800<br>800<br>700<br>600<br>600<br>500<br>400<br>400<br>300<br>200 200<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FF600R12ME4_B11 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon JM. Ω ,V CE =600V IF - 600A. V CE = 600 V<br>80 60<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>70 EJ]<br>| | UE<br>50<br>ee Bo tt<br>60<br>40<br>50<br>Coes } E S<br>40 aa a 30 ENS<br>30<br>a e oP 20 SR<br>20<br>4m 10 TTT yyy<br>PLL<br>10<br>0 0<br>0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>0,1 ee 100000 ee |<br>H ZthJC : Diode e — Rtyp —————<br>Po a a<br>i DO<br>PL TUTE TTT E TT es ee<br>PEt ep ry.<br>10000<br>PAC EAI LIE LTA Ne ee<br>;i —<br>van ee<br>0,01 7ee| TTT T ta aeTTTT are Ne ee eee<br>iee ee el aNNX eee<br>ET TT TET 1000 ————_————<br>a a ll a ee<br>i:    1    2    3    4<br>ri[K/W]:   0,0084   0,0489   0,002    0,0057<br>CS τ i[s]:    0,0006   0,0245   0,0733   0,9951    PN<br>0,001 Toon on 100 Pt tT TE EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FF600R12ME4_B11 

## **Schaltplan�/�circuit_diagram_headline** 

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## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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prepared�by:�CU date�of�publication:�2013-11-05<br>approved�by:�MK revision:�2.1<br>**----- End of picture text -----**<br>


8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF600R12ME4_B11 

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Nutzungsbedingungen<br>**----- End of picture text -----**<br>


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application.<br>**----- End of picture text -----**<br>


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