# IGBT Module, Dual, 600 A, 1.75 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3577292/)

**URL**: https://novapart.co/products/FF600R12KE4PBOSA1/igbt-module-dual-600-a-175-v-150-c
**SKU**: FF600R12KE4PBOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €140.2600
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | 62mm C |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 600A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 600A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577292/)

## FF600R12KE4P 

VCES = 1200V IC nom = 600A / ICRM = 1200A 

- Hochleistungsumrichter 

- • Motorantriebe • USV-Systeme • Windgeneratoren 

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- CEsat 

- • Sehr grof&e • VCEsat mit 

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- Standardgehäuse 

- • Thermisches Interface Material bereits aufgetragen 

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- CEsat 

- • Unbeatable • VCEsat 

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**Digit** 

Datasheet www.infineon.com 

2019-10-10 

FF600R12KE4P 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 70°C, Tvj max= 175°C|ICDC|600|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1200|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 600 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,75<br>2,00<br>2,05|2,20|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 23,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||5,00||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,3||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||38,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,40||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,17<br>0,18<br>0,18||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,046<br>0,048<br>0,052||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,40<br>0,49<br>0,52||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 600 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,062<br>0,098<br>0,11||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 600 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 11000 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||16,0<br>29,5<br>35,5||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 600 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 3300 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||45,5<br>70,0<br>78,0||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||2600||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,0653|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **Vorläufige�Daten Preliminary�Data** 

|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|35000<br>33000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,80<br>1,75|2,45|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||535<br>655<br>680||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,5<br>94,0<br>110||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 11000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||27,0<br>48,5<br>54,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,126|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||29,0<br>23,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||23,0<br>11,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,42||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|Gewicht<br>Weight||G||340||g|



Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
1200 1200<br>1100 T T vj vj  = 25°C  = 125 ° C 1100 V V GE GE  = 19V  = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>1000 1000 VGE = 11V<br>VGE = 9V<br>900 900<br>800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.62� Ω ,�RGoff�=�0.62� Ω ,�VCE�=�600�V 

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**----- Start of picture text -----**<br>
1200 150<br>1100 T T vj vj  = 25°C  = 125 ° C 140 EEonon, T, Tvjvj = 125°C = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>130 E off , T vj  = 150°C<br>1000<br>120<br>900<br>110<br>800 100<br>90<br>700<br>80<br>600<br>70<br>500<br>60<br>400 50<br>40<br>300<br>30<br>200<br>20<br>100<br>10<br>0 0<br>6 7 8 9 10 11 12 13 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,| C =600A,V CE =600V<br>180170 EEonon,, T Tvvjj = 125°C = 150°C y [°] 0,1 pot ZthJH : IGBT TT<br>160 EEoffoff, T, Tvjvj = 125°C = 150°C 7/ a HHH<br>150<br>140<br>130<br>120<br>110<br>100 0,01<br>90<br>80<br>70<br>60<br>50<br>40 i: 1 2 3 4<br>ri[K/W]: 0,00325 0,0231 0,0267 0,0122<br>τ i[s]: 0,0012 0,0367 0,143 0,992<br>30<br>20 0,001<br>0 1 2 3 4 5 6 7 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =062 Ω ,T vj =150°C<br>1400 1200<br>I I CC, Modul , Chip 1100 T T vj vj  = 25°C  = 125 ° C<br>Tvj = 150°C<br>1200<br>1000<br>900<br>1000<br>800<br>700<br>800<br>600<br>if<br>600<br>500 if /<br>400<br>Poff<br>400<br>300<br>200<br>200<br>100<br>0 neat 0 alloO yf<br>Ep! Zee<br>0 200 400 600 800 1000 1200 1400 0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =0.62 Ω ,V CE =600V IF =600A,V CE =600V<br>80 80<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>70 70<br>_ 7 ~<br>a"<br>a<br>60 Za 2 60<br>4 [7]<br>/ aN<br>50 7 50 NX<br>7 ~<br>40 40<br>/i”Ae ~~a ~~ - ~<br>7<br>30 / 30<br>/<br>/<br>/<br>20 20<br>10 10<br>0 0<br>0 200 400 600 800 1000 1200 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


ZthJH 

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**----- Start of picture text -----**<br>
1 a ee<br>_—ee [RS] ZthJH : Diode ee eee<br>0,1<br>ai a<br>0,01<br>i: 1 2 3 4<br>ri[K/W]: 0,0065 0,0597 0,0407 0,0194<br>τ i[s]: 0,00109 0,0364 0,229 1,92<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FF600R12KE4PBOSA1/igbt-module-dual-600-a-175-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff600r12ke4pbosa1/igbt-module-dual-n-channel-1-2kv/dp/3577292)
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