# IGBT Module, Dual [Half Bridge], 600 A, 1.7 V, 3.35 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3514416/)

**URL**: https://novapart.co/products/FF600R12IP4BOSA1/igbt-module-dual-half-bridge-600-a-17-v-335-kw-150
**SKU**: FF600R12IP4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €326.8000
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 10Pins |
| Product Range | PrimePACK 2 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 3.35kW |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual N Channel |
| Dc Collector Current | 600A |
| Power Dissipation Pd | 3.35kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 600A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3514416/)

IGBT-Module IGBT-modules 

## FF600R12IP4 

VCES = 1200V IC nom = 600A / ICRM = 1200A 

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1 

> IGBT-ModuleIGBT-modules FF600R12IP4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF600R12IP4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AC<br>approvedby:MS<br>dateofpublication:2013-11-05<br>revision:2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>600<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>3,35<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,70<br>2,00<br>2,10<br>2,05<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 23,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,40<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>37,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>2,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>td on<br>0,21<br>0,24<br>0,24<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>tr<br>0,12<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>td off<br>0,70<br>0,80<br>0,85<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 600 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>tf<br>0,15<br>0,20<br>0,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 3800 A/µs (Tvj= 150°C)<br>RGon= 2,2Ω<br>Eon<br>52,0<br>77,0<br>83,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 2,2Ω<br>Eoff<br>81,0<br>105<br>115<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>45,0 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>14,0<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FF600R12IP4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|51,0<br>49,0<br>|kA²s<br>kA²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,75<br>1,70|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 3800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||350<br>430<br>440||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 3800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||60,0<br>110<br>120||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 3800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||25,0<br>42,0<br>50,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||75,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||24,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4 

3 

IGBT-Module IGBT-modules 

## FF600R12IP4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||4,50||K/kW|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|18<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,30||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||825||g|



4 

IGBT-Module IGBT-modules 

## FF600R12IP4 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>1200 1200<br>Tvj = 25°C VGE = 19V<br>1100 me Tvj = 125°C LL Pe 1100 R VGE = 17V e<br>Tvj = 150°C VGE = 15V<br>1000 Ee b oer 1000 VGE = 13V pe<br>VGE = 11V<br>900 e e 900 VGE = 9V<br>800 e eee/ ee 800 | PLAY: 7<br>Po e T<br>700 700<br>600 600<br>ee eee ee eee eee<br>eee eee Cee<br>500 500<br>eefo ;<br>400 400<br>eeee i ee ee)7hil}<br>300 300<br>200 200<br>ee ee<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =22 Ω ,R Goff =22 Ω ,V CE =600V<br>1200 240<br>Tvj = 25°C Eon, Tvj = 125°C<br>1100 Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 210 Eoff, Tvj = 125°C<br>1000 Eoff, Tvj = 150°C<br>a nye “<br>900 180<br>800<br>150<br>700<br>600 120<br>500 rn<br>90<br>400<br>300 60<br>200<br>30<br>a ae BP canae<br>100<br>e e<br>0 0<br>5 6 7 8 9 10 11 12 0 120 240 360 480 600 720 840 960 1080 1200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

## IGBT-Module IGBT-modules 

## FF600R12IP4 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =600A,V CE =600V<br>180 100<br>Eon, T —<— vj = 125°C na ‘ 7 | SHH— ZthJC : IGBT EEeeS HH} tHee<br>Eon, Tvj = 150°C y ror e ee<br>160 Eoff, Tvj = 125°C , J pt to<br>Eoff, Tvj = 150°C<br>ae PTE AE TTT PTT<br>140 _ ; i<br>a TIME<br>10<br>na ¢ C—Oa  roo oe oo ot<br>120 P| | AZ] — |4 |ey ee eeELIEeS ETT<br>_— —- oT. PTT<br>eseceeeetee pe PAL TUTT<br>100<br>1<br>e ee ee |<br>80 a<br>17 ee<br>4 PT TT eeeee<br>; PT TTTT<br>a<br>60 i:    1    2    3    4<br>ri[K/kW]:   1,8    9,1    30,5   3,6<br>τ i[s]:    0,0008   0,013   0,05   0,6<br>40 0,1<br>1,0 2,0 3,0 4,0 5,0 6,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **(RBSOA)** 

IF F) 

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**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =415V,R Goff =2.2 Ω ,T vj =150°C<br>2000 1200<br>IC, Modul Tvj = 25°C<br>1800 IC, Chip 1080 Tvj = 125°C<br>FE |] a Tvj = 150°C ae<br>1600 960<br>1400 840<br>pt | tt} SS<br>ee ee ee<br>1200 720<br>1000 600<br>800 480<br>600 360<br>ee ey<br>400 240<br>200 120<br>Le<br>0 0<br>PP<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FF600R12IP4 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =2.2 Ω ,V CE =600V IF =600A,V CE =600V<br>80 80<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>70<br>EJ it} fed}<br>70<br>60<br>60<br>50<br>40 50<br>ef el [rT]<br>30<br>40<br>=<br>20<br>30<br>10 a TPT Py] P| eer<br>0 20<br>TPT TTT} EL]|<br>0 150 300 450 600 750 900 1050 1200 1,0 2,0 3,0 4,0 5,0 6,0<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>100 100000<br>ZthJC : Diode Rtyp<br>}— Sr [— fF<br>o o ee TTT jy<br>aT Z a e eee ee<br>SSO @aMOUTNGEROUIIMM Il a e eeeee<br>CM<br>10 10000<br>—————————<br>pat} IM LUM TM Ke<br>a SS<br>PT TTT ETT ES NN se ee<br>PTPT TT TTTEETTTT potaNENe a eeee<br>a | 2 ee eee<br>1 SN 1000<br>Pt ee<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i:    1    2    3    4<br>ri[K/kW]:   6,4    17,8    49,6   1,2<br>a τ i[s]:    0,0008   0,013   0,05   0,6    | ee ee<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/kW] R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FF600R12IP4<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>


prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4 

8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF600R12IP4 

## **Nutzungsbedingungen** 

## application. 

9 



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- [Supplier page](https://es.farnell.com/infineon/ff600r12ip4bosa1/igbt-module-dual-n-channel-1-2kv/dp/3514416)
---

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