# IGBT Module, Dual, 700 A, 1.55 V, 1.8 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3703569/)

**URL**: https://novapart.co/products/FF600R07ME4B11BPSA1/igbt-module-dual-700-a-155-v-18-kw-150-c
**SKU**: FF600R07ME4B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €124.1100
**Stock**: 10+
**Lead Time**: 176 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.8kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 700A |
| Power Dissipation Pd | 1.8kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 700A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703569/)

IGBT-Modul IGBT-Module 

## FF600R07ME4_B11 

VCES = 650V 

IC nom = 600A / ICRM = 1200A 

- Hybrid-Nutzfahrzeuge 

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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom 

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• High Short Circuit Capability, Self Limiting Short 

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- Kupferbodenplatte 

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## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module FF600R07ME4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF600R07ME4_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:KY<br>approvedby:KV<br>dateofpublication:2014-12-15<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 60°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>600<br>700<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1800<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>IC= 600 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 9,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,90<br>5,80<br>6,50<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>37,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,12<br>0,13<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,12<br>0,12<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 0,33Ω<br>td off<br>0,43<br>0,46<br>0,46<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 600 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 0,33Ω<br>tf<br>0,08<br>0,11<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 600 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4500 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>7,00<br>9,40<br>9,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 600 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 0,33Ω<br>Eoff<br>35,5<br>39,5<br>40,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2700<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,083 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,04<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

IGBT-Modul IGBT-Module FF600R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|600|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1200|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|19500<br>17500<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>IF= 600 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 600 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||185<br>285<br>310||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 600 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||13,5<br>30,0<br>36,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 600 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,10<br>8,70<br>10,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,145|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,042||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 

3 

IGBT-Modul IGBT-Module FF600R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 

4 

IGBT-Modul IGBT-Module 

## FF600R07ME4_B11 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>1200 1200<br>Tvj = 25°C VGE = 19V<br>[ee Tvj = 125°C | ee | e VGE e  = 17V cee Zn<br>Tvj = 150°C VGE = 15V<br>1000 1000 VGE = 13V<br>Eee Piee a | tt<br>VGE = 11V<br>p e VGE = 9V PASI : E<br>v | T t |<br>800 SERRREREP AZ 800 TT =<br>27000 eee ee [e] [e] [e]<br>PEEAber Le<br>ii /<br>600 600<br>iG ty<br>SERREES Re eee eee<br>SERREEP iORR eee ‘Ae<br>400 400<br>SRRREE —<br>[e] [e]<br>200 200<br>PEP [TTA]  EER Ca e<br>EEREBEEZ JAl\oiliit)a Ei [wi}] f<br>0 0<br>a AREER iF; | tt<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =18 Ω ,R Goff =0.33 Ω ,V CE =300V<br>1200 100<br>Tvj = 25°C Eon, Tvj = 125°C<br>Mm Tvj = 125°C LL Mm Eoff lili , Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>1000 Eoff, Tvj = 150°C<br>80<br>po} be [E SERRE<br>Oe<br>800<br>fs [ee] t [ee] t :<br>60<br>PP eee vey L L<br>ee eee<br>600<br>eeee 40 eee eee<br>jp v<br>400<br>ip yt of PRT<br>20<br>200<br>ee, Ae eeeee<br>| | er/ | Petwet | | |eeeee<br>poe pet<br>0 0<br>oTtt<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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## IGBT-Modul IGBT-Module Technische Information FF600R07ME4_B11 / Technical Information 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =600A,V CE =300V<br>160 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>140 | Eon, Tvj = 150°C eae ooa o<br>| Eoff, Tvj = 150°C ee ee |<br>ee || LU CCC C n<br>120 [a] |||<br>A [a] el 0,1 0 A<br>100<br>eee eee aCoon e eee<br>Hf Coie iso LSC<br>80<br>ft At | Con Cone Ceo<br>Sea eae ST Tt TE<br>60<br>0,01<br>| [|] ffze| | | | ll aePEM TE eeEST eeLTA Tl<br>40<br>eee TAL TT TT | Te nett<br>po of Y | ft | Pt cama i: 1 2 3 4<br>20 ri[K/W]: 0,00593 0,00831 0,06154 0,00625<br>FSA ooo τ i[s]: 0,00032 0,00598 0,03466 0,73105<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE 0 V,R Goff +=0.33 Ω ,T vj =150°C<br>1400 1200<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>= mH Leite.<br>1200 Tvj = 150°C<br>1000<br>1000<br>PCO ) ep ee<br>800<br>800<br>Se eeeeeeees<br>600<br>CECE in<br>600<br>RC) FEREEEGIEE<br>400<br>COC FeeEReyzre<br>400<br>COLL) 200 epee<br>200 PEEL), Eee<br>0 0 th<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Modul IGBT-Module 

## FF600R07ME4_B11 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon t'5 Ω ,V CE =300V IF = 600A, V CE = 300 V<br>16 16<br>14 a EErecrec, T, Tvjvj = 125°C = 150°C 14 EErecrec, T, Tvjvj = 125°C = 150°C<br>12 TL ee 12 ee<br>10 tit tat 10 ELE ETT<br>ecere} LP EE EE<br>8 8<br>LiberirrTEP LEEEE<br>6 6<br>4 WOT 4 LENE EEE EL<br>PEPEEEPe LESSEE<br>2 2<br>Cr) = OCSEee<br>0 0<br>0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>Se ZthJC : Diode eee es t pe Rtyp<br>PTLN TT TETTTT TTTET TTTTT aa e eeeeeee ee<br>a a A e e<br>0,1 ULM|Sesa eo ei aes yeaeeemea eTel 10000 ESKLNTes NN [LE] se ee<br>ee a a Ne a ee<br>| PN<br>a ee<br>UU MERU MERIUTIORARITIOROIl 2 ee eee<br>0,01 YaNT 1000 EN<br>a | el NS<br>PTa [TT] TTT ae TT ee lll TT aa eeeeeeee<br>i: 1 2 3 4<br>ri[K/W]: 0,01483 0,01987 0,09784 0,00902<br>2 τ i[s]: 0,00026 0,00612 a 0,03389 0,59044 | ee<br>0,001 |Amm o «=| 100 |<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module FF600R07ME4_B11 

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## **Schaltplan�/�circuit_diagram_headline** 

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## **Gehäuseabmessungen�/�package�outlines** 

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In fin e o n<br>**----- End of picture text -----**<br>


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prepared�by:�KY date�of�publication:�2014-12-15<br>approved�by:�KV revision:�3.1<br>**----- End of picture text -----**<br>


8 

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IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br>


## FF600R07ME4_B11 

## **Nutzungsbedingungen** 

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**----- Start of picture text -----**<br>
application.<br>**----- End of picture text -----**<br>


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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff600r07me4b11bpsa1/igbt-module-650v-700a-1-8kw-press/dp/3703569)
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