# IGBT Module, Dual [Half Bridge], 450 A, 2.5 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3021698/)

**URL**: https://novapart.co/products/FF450R33T3E3B5BPSA1/igbt-module-dual-half-bridge-450-a-25-v-150-c
**SKU**: FF450R33T3E3B5BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €1159.7100
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:3.3kV; Transistor Ca

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 10Pins |
| Product Range | XHP3 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 450A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 450A |
| Collector Emitter Voltage Max | 3.3kV |
| Collector Emitter Voltage V(Br)Ceo | 3.3kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Saturation Voltage Vce(On) | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3021698/)

FF450R33T3E3_B5 

VCES = 3300V IC nom = 450A / ICRM = 900A 

- Mittelspannungsantriebe 

- • Motorantriebe • Traktionsumrichter 

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- CEsat 

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- AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit 

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- Gehäuse mit erweiterten 

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- CEsat 

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- AlSiC base plate for increased thermal cycling capability 

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- Package with enhanced insulation of 10.4kV AC 10s 

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**Digit** 

Datasheet www.infineon.com 

2019-01-28 

FF450R33T3E3_B5 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= -40°C<br>Tvj= 150°C|VCES|3300<br>3300|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 100°C, Tvj max= 150°C|ICDC|450|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|900|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 450 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||2,50<br>2,90<br>3,00|2,75<br>3,30|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 12,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 1800 V|QG||12,5||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,3||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||84,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||2,00||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 3300 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGon= 0,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,53<br>0,57<br>0,58||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGon= 0,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,10<br>0,13<br>0,13||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGoff= 3,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||1,71<br>1,86<br>1,92||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 450 A, VCE= 1800 V<br>VGE= -15 / 15 V<br>RGoff= 3,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,13<br>0,24<br>0,27||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 450 A, VCE= 1800 V, Lσ= 85 nH<br>di/dt = 3650 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 0,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||500<br>765<br>845||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 450 A, VCE= 1800 V, Lσ= 85 nH<br>du/dt = 2850 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||415<br>610<br>670||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 2500 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1800||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||28,4|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||17,4||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**Diode,Wechselrichter/Diode,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= -40°C<br>Tvj= 150°C|VRRM|3300<br>3300|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|82,9<br>68,0|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 150°C|PRQM|1000|||kW|
|Mindesteinschaltdauer<br>Minimumturn-ontime||ton min|10,0|||µs|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||3,10<br>2,75<br>2,65|3,50<br>2,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 3650 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||680<br>680<br>680||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 3650 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||230<br>445<br>525||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 3650 A/µs (Tvj=150°C)<br>VR= 1800 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||220<br>490<br>595||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||45,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||19,3||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 10 s|VISOL|10,4<br>|||kV|
|Teilentladungs-Aussetzspannung<br>Partialdischargeextinctionvoltage|RMS, f = 50 Hz, QPDtyp. 10 pC|VISOL|5,1<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||AlSiC||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||53,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||26,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 600|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,41<br>0,31||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|4,25||5,75|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote<br>SchraubeM3-Montagegem.gültigerApplikationsschrift<br>ScrewM3-Mountingaccordingtovalidapplicationnote|M|8,0<br>0,9|-<br>-|10<br>1,1|Nm<br>Nm|
|Gewicht<br>Weight||G||700||g|



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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
900 900<br>Tvj = 25°C VGE = 20V<br>Tvj = 125°C VGE = 15V<br>Tvj = 150°C VGE = 12V<br>VGE = 10V<br>750 750 VGE = 9V<br>VGE = 8V<br>600 600<br>450 450<br>300 300<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
900<br>Tvj = 25°C<br>Tvj = 125°C<br>Tvj = 150°C<br>750<br>600<br>450<br>300<br>150<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.7� Ω ,�RGoff�=�3.3� Ω ,�VCE�=�1800�V 

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**----- Start of picture text -----**<br>
2500<br>Eon, Tvj = 25°C<br>Eoff, Tvj = 25°C<br>2250 E on , T vj  = 125°C<br>Eoff, Tvj = 125°C<br>2000 EEon off , T, Tvj vj  = 150°C = 150°C<br>1750<br>1500<br>1250<br>1000<br>750<br>500<br>250<br>0<br>0 150 300 450 600 750 900<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =450A,V CE =1800V VGE =415V,R Gon =07 Ω ,R Goff =33 Ω ,V CE =1800V,T vj =125°C<br>2000 10<br>ee<br>Eon, Tvj = 25°C tdon<br>Eoff, Tvj = 25°C t r<br>1800 E on , T vj  = 125°C t doff<br>Eoff, Tvj = 125°C t f<br>1600 EEon off , T, Tvj vj  = 150°C = 150°C<br>. 7<br>1400<br>1<br>1200 a<br>/ SS Se ee<br>rr<br>1000<br>800<br>7 ah Le<br>/ 0,1 Fo ee<br>600<br>x<br>2 —————<br>-_ ee<br>400 ee<br>200<br>0 0,01<br>0 1 2 3 4 5 6 7 8 9 10 0 150 300 450 600 750 900<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,Wechselrichter (typisch) Transienter Warmewiderstand IGBT,Wechselrichter<br>switching times IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJC =f (t)<br>VGE =+15V,1 C =450A,V CE =1800V,T vj =125°C<br>10 a a tdon ee 100 TTT ZthJC : IGBT<br>tr<br>tdoff<br>tf<br>EARS Ee<br>aeee<br>POORERTT Io<br>1 10<br>| | Pes | PTI ETT ETAT TIN TTT<br>CooeeECCC = C i: c 1 2 3 4<br>ri[K/kW]: 3,87 16,4 5,79 2,34<br>τ i[s]: 0,00307 0,0411 0,415 5,51<br>0,1 Ww 1 | CU TI<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10 100<br>RG [ Ω ] t [s]<br>E [mJ] t [µs]<br>t [µs]  [K/kW]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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## **Sicherer�Rückwärts-Arbeitsbereich�IGBT,Wechselrichter (RBSOA) reverse�bias�safe�operating�area�IGBT,Inverter�(RBSOA)** IC�=�f�(VCE) 

**Kapazitäts�Charakteristik�IGBT,Wechselrichter�(typisch) capacity�characteristic�IGBT,Inverter�(typical)** C�=�f(VCE) 

VGE�=�0�V,�Tvj�=�25°C,�f�=�100kHz 

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**----- Start of picture text -----**<br>
VGE�=�±15�V,�RGoff�=�3.3� Ω ,�Tvj�=�150°C<br>1050 140<br>IC, Modul Cies<br>IC, Chip 130 C res<br>Coes<br>900 120<br>110<br>750 100<br>90<br>600 80<br>70<br>450 60<br>50<br>300 40<br>30<br>150 20<br>10<br>0 0<br>0 500 1000 1500 2000 2500 3000 3500 0,1 1 10 100<br>VCE  [V] VCE [V]<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>


**Gateladungs�Charakteristik�IGBT,Wechselrichter�(typisch) gate�charge�characteristic�IGBT,Inverter�(typical)** VGE�=�f(QG) IC�=�450�A,�Tvj�=�25°C 

**Durchlasskennlinie�der�Diode,�Wechselrichter�(typisch) forward�characteristic�of�Diode,�Inverter�(typical)** IF�=�f�(VF) 

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**----- Start of picture text -----**<br>
15 900<br>VCC = 1800V Tvj = 25°C<br>Tvj = 125°C<br>12 Tvj = 150°C<br>750<br>9<br>6<br>600<br>3<br>0 450<br>-3<br>300<br>-6<br>-9<br>150<br>-12<br>-15 0<br>0 2 4 6 8 10 12 14 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>QG [µC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon =0.7 Ω ,V CE =1800V IF =450A,V CE =1800V<br>800 700<br>Erec, Tvj = 25°C Erec, Tvj = 25°C<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>700 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>600<br>600<br>500<br>7”a7 aa reSA~~<br>7 —_<——" re<br>a oT ae<br>500 aa ~ ~ TFs Sse,<br>400<br>—_a ~_—TSS ~<br>/ “<br>400 7<br>foo<br>/ 7<br>// 300<br>/f¢<br>300 / y<br>Jv<br>‘7<br>/ 200 ~~<br>200<br>100<br>100<br>0 0<br>0 150 300 450 600 750 900 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


ZthJC = f(t) IR = f(V R) Tvj = 

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**----- Start of picture text -----**<br>
100 1050<br>ZthJC : Diode IR, Modul<br>900<br>PUI PETIT(to1<br>750<br>600<br>10<br>450<br>300<br>i: 1 2 3 4 150<br>ri[K/kW]: 8,48 23,3 9,79 3,9<br>τ i[s]: 0,00268 0,0368 0,333 4,15<br>1 0<br>0,001 0,01 0,1 1 10 100 0 500 1000 1500 2000 2500 3000 3500<br>t [s] VR [V]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


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FF450R33T3E3_B5 

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dug . ocllo<br>(4x) 8,5<br>74<br>LI et) afta<br>63,5<br>(6x) 7mm<br>screwing depth<br>29,5<br>20<br>FeO: :<br>0<br>20<br>29,5<br>=| a l ll<br>59<br>a | aan |<br>63,5<br>70<br>(4x) M8 (4x) 18<br>(4x) 16mm screwing depth 6,6<br>86<br>Cs aa<br>43 33,5 22 0 22 33,5 43<br>127 140<br>18<br>(3x) 21<br>0 4 36 40<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FF450R33T3E3B5BPSA1/igbt-module-dual-half-bridge-450-a-25-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff450r33t3e3b5bpsa1/igbt-module-n-ch-3-3kv-450a/dp/3021698)
---

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