# IGBT Module, Dual [Half Bridge], 580 A, 1.75 V, 2.4 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377258/)

**URL**: https://novapart.co/products/FF450R12KT4HOSA1/igbt-module-dual-half-bridge-580-a-175-v-24-kw-150
**SKU**: FF450R12KT4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €125.0400
**Stock**: 10+
**Lead Time**: 225 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:580A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:2.4kW; Collector Emitter Voltage V(br)ceo:1.2kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 2.4kW |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 580A |
| Power Dissipation Pd | 2.4kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 580A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377258/)

IGBT-模块 IGBT-modules 

## FF450R12KT4 

VCES = 1200V IC nom = 450A / ICRM = 900A 

## **典型应用** 

- 大功率变流器 

- • 电机传动 • UPS系统 • 风力发电机 

- 

- 

- 

- 

## **电气特性** 

- 

- 低开关损耗 

- CEsat 

- • 无与伦比的坚固性 

- VCEsat 

- 

- 

- CEsat 

- 

- VCEsat 

## **机械特性** 

- 

- 

- 高爬电距离和电气间隙 

- • 高功率密度 

- • 绝缘的基板 • 标封装 

- 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF450R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF450R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-04<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>580<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2400<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 17,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,60<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,9<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>28,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,04<br>0,045<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,45<br>0,52<br>0,54<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,10<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 9000 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>19,0<br>30,0<br>36,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4500 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>26,0<br>40,0<br>43,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,062 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,03<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF450R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|450|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|34000<br>32000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||490<br>550<br>560||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||44,0<br>80,0<br>90,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||19,0<br>35,0<br>39,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,11|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,055||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-04 revision:�3.0 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## FF450R12KT4 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



4 

## IGBT-模块 IGBT-modules 

## FF450R12KT4 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 a | y v 900 es<br>Tvj = 25°C VGE = 19V<br>810 Tvj = 125°C 810 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>720 e— 720 VGE = 11V<br>|} fie |} i7eeane<br>VGE = 9V<br>e e<br>630 630<br>ee[Ls e e /ee<br>540 540<br>An e cee<br>450 450<br>360 360<br>ee ee ee ee<br>270 270 oan<br>eeeeeee/ eeeeee,‘77<br>180 180<br>90 90<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =1 Ω ,R Goff =1 Ω ,V CE =600V<br>900 120<br>Tvj = 25°C Eon, Tvj = 125°C<br>810 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>ee 100 E Eoff, Tvj = 150°C l tl,<br>720<br>630<br>80<br>540<br>pt | | Ve /<br>450 60<br>360<br>pt /) ve “,<br>| | tv P| | AY<br>40<br>270<br>pt} tT ye GL<br>4<br>180<br>PTA |Le<br>20<br>90<br>7 aT<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF450R12KT4 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =450A,V CE =600V<br>200 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>180 =o Eoff, Tvj = 125°C or i | ff fe: 1 1sHt Tt Tit 7 Citi  co [ Pei |<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>160 lore a<br>cS aYA a 6 | ||<br>e e 0 |<br>140<br>a e ) IAT<br>120<br>7 CTEM<br>100 ptt 0,01 TT<br>ee SU<br>80<br>BRRPSARREN Mea:ieee<br>60 Saeceaneeee a<br>40 | ffZO| ft | | oda PATTIEa ELTA| EET| FETT]|<br>i:    1    2    3    4<br>20 aneeeenne 7 FFT) r τ ii[K/W]:   [s]:    CCU 0,00372   0,01    0,02046   0,02    ET 0,01984   0,05    0,01798   0,1    C<br>0 PEP ee ET 0,001 a<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) TE attt —i Bases ( SRA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE “i sV.R Goff =1 Ω ,T vj =150°C a<br>1200 900<br>IC, Modul Tvj = 25°C<br>IC, Chip 810 Tvj = 125°C<br>Tvj = 150°C<br>= E<br>720<br>Po u) Hoe<br>900<br>630<br>540<br>SRR<br>600 450<br>360<br>270<br>CELL) ane<br>300<br>180 peeaA<br>foeee7aeeeee<br>90<br>Piert<br>0 0 TE<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FF450R12KT4 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = ASO A.V CE = 600 V<br>50 50<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>45 Erec, Tvj = 150°C 45 Erec, Tvj = 150°C<br>FEJo) U E<br>40 40<br>35 35<br>PT perder UE EE EE<br>COREE} ENR<br>30 30<br>25 25<br>20 PIA 20<br>TT TTT EL UISS ET<br>15 15<br>PCE} EEE FE<br>10 10<br>5 5<br>0 0<br>0 100 200 300 400 500 600 700 800 900 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>ZthJC : Diode<br>o o TT<br>PT TT TTTTTT<br>a |<br>CC CC<br>0,1<br>PT TTT ATT<br>PT TT CATT TTT TTT<br>A<br>a) | ee ll<br>ATi LEE TATE LU<br>0,01<br>P77<br>FOr<br>1 7{ Tei tTTT<br>en7 | TT ||| TTT TT T<br>i:    1    2    3    4<br>ri[K/W]:   0,0066   0,0363   0,0352   0,0319<br>PT τ i[s]:    0,01    0,02    T 0,05    0,1    f<br>LAME Somroomol |<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF450R12KT4<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>Infineon<br>prepared�by:�MK date�of�publication:�2013-11-04<br>approved�by:�WR revision:�3.0<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FF450R12KT4 

## **使用条件和条款** 

使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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9 



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