# IGBT Module, Dual [Half Bridge], 520 A, 1.75 V, 2.4 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377257/)

**URL**: https://novapart.co/products/FF450R12KE4HOSA1/igbt-module-dual-half-bridge-520-a-175-v-24-kw-150
**SKU**: FF450R12KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €118.6900
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:520A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:2.4kW; Collector Emitter Voltage V(br)ceo:1.2kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 2.4kW |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 520A |
| Power Dissipation Pd | 2.4kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 520A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377257/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FF450R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

62mm�C-Serien�Modul�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled�Diode� 62mm�C-series�module�with�trench/fieldstop�IGBT4�and�Emitter�Controlled�diode�� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FF450R12KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|62mmC-SerienModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode<br>62mmC-seriesmodulewithtrench/fieldstopIGBT4andEmitterControlleddiode<br>preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-04<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>520<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2400<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 17,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,70<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,9<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>28,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,20<br>0,25<br>0,27<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,045<br>0,05<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,50<br>0,60<br>0,62<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,10<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 9000 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>19,0<br>30,0<br>36,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>33,0<br>50,0<br>56,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,062 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,031<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF450R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|450|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|34000<br>32000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||490<br>550<br>560||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||44,0<br>80,0<br>90,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 9000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||19,0<br>35,0<br>39,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,11|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,055||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-04 revision:�2.2 

prepared�by:�MK approved�by:�WR 

2 

IGBT-模块 IGBT-modules 

## FF450R12KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



3 

## IGBT-模块 IGBT-modules 

## FF450R12KE4 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 a | ) “ 900 es [|]<br>Tvj = 25°C VGE = 19V<br>E Tvj = 125°C a ra VGE = 17V 7<br>800 800<br>O Tvj = 150°C LY) - F VGE = 15V O —_<br>VGE = 13V<br>700 ho o) 700 VVGEGE = 11V = 9V eZ<br>600 600<br>ee ee e e<br>ae af 7<br>See ieee eee<br>500 a 500 hi é .<br>400 Ae 400 eee: 22/<br>ee Ae eee aevA<br>300 300<br>200 200<br>ey eee eeeeee<br>100 100<br>PT AL | | Ty Lge<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFRIAK IGBT, Hes ( HB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =1 Ω ,R Goff =1 Ω ,V CE =600V<br>900 120<br>Tvj = 25°C Eon, Tvj = 125°C<br>800 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>100 Eoff, Tvj = 150°C<br>en| ;<br>700<br>cerry) LT eef\ -<br>600 80<br>500<br>ee ene es<br>60<br>400<br>GR 7 7<br>300 40<br>ptt | AT LE ae2a8AA<br>200<br>CTT ATT] 20 |e TTT<br>oT om<br>100<br>if ATI<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800 900<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## FF450R12KE4 

## **初步数据** 

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**----- Start of picture text -----**<br>
switchingFIRE IGBT,losses 3eesIGBT,Inverter( HAY) (typical) ietransientASPARBITthermalIGBT, 35impedance IGBT, Inverter<br>Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+415V,1 C =450A,V CE =600V<br>220 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>200 =— E _—— off, Tvj = 125°C ee PTs EC l tt<br>Eon, Tvj = 150°C<br>180 f e Eoff, Tvj = 150°C Poppe° oe a a<br>160 Oe O e eea aAi<br>140 eee Y V4<br>eee SA<br>120<br>HT<br>0,01<br>100 Pf ft fr< ff fd | potaTA er<br>8060 Pf| | ftrf}; ryt ffff}| dd4 APtaYA0|<br>40 P aap a a<br>i:    1    2    3    4<br>A AA 7TH) ri[K/W]:    EC 0,00372   0,02046   0,01984    O 0,01798<br>20 τ i[s]:    0,01    0,02    0,05    0,1<br>0 0,001<br>pt tT | |<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE BV, R Goff =1 Ω ,T vj =150°C<br>1000 900<br>IC, Modul Tvj = 25°C<br>900 IC, Chip 810 Tvj = 125°C<br>EI] F Tvj = 150°C OU<br>PTT<br>800 720<br>| Ew) e ee te<br>700 630<br>600 540<br>ee eee<br>500 450<br>ee<br>400 360<br>300 270<br>200 180<br>100 90<br>pt tt [ty] yy Le er<br>0 0<br>0 ee 200 400 600 800 1000 1200 1400 ee 0,0 0,2 ee 0,4 0,6 ee 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF450R12KE4 

## **初步数据** 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = aS0A. V CE = 600 V<br>55 50<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>50 fFeT Erec, Tvj = 150°C 45 Erec, Tvj = 150°C<br>45<br>40<br>40 ARE TTT TTI  I<br>35<br>35 SSee8222tert 2 sees<br>Py 30 |<br>30<br>25<br>e A AR<br>25 AEA CNB<br>20<br>20 PEA CoCS S ecccr<br>| ft ft | ty ES<br>15<br>15<br>Paneenee PEELE<br>10<br>10<br>5 5<br>0 0<br>0 100 200 300 400 500 600 700 800 900 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [238 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC =f (t)<br>1<br>ZthJC : Diode<br>or o<br>aPT E aTTee TTT]<br>0,1<br>rT TTTTT<br>a ee ell<br>CZ<br>PLT I TE TT<br>0,01 VALfe LAE TIE TT<br>A<br>ET a ee ee eee<br>7 TT<br>7] TTT TTT]<br>7 2<br>i:    1    2    3    4<br>ri[K/W]:   0,0066   0,0363   0,0352   0,0319<br>PT τ i[s]:    0,01    0,02    T 0,05    0,1    f<br>LN or c<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF450R12KE4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>


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7 

IGBT-模块 IGBT-modules 

## FF450R12KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



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