# IGBT Module, Dual, 560 A, 1.55 V, 1.45 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3889194/)

**URL**: https://novapart.co/products/FF450R07ME4B11BPSA1/igbt-module-dual-560-a-155-v-145-kw-150-c
**SKU**: FF450R07ME4B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €90.6000
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 Series |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.45kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 560A |
| Power Dissipation Pd | 1.45kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 560A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3889194/)

IGBT-Modul IGBT-Module FF450R07ME4_B11 

VCES = 650V 

IC nom = 450A / ICRM = 900A 

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• High Short Circuit Capability, Self Limiting Short 

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- Kupferbodenplatte 

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## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module FF450R07ME4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF450R07ME4_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:KY<br>approvedby:KV<br>dateofpublication:2014-12-15<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>560<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1450<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 7,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,10<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>27,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,82<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,085<br>0,089<br>0,093<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,082<br>0,087<br>0,088<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>0,48<br>0,51<br>0,52<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 450 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,067<br>0,093<br>0,099<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4900 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>3,40<br>4,60<br>4,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2600 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>23,5<br>28,5<br>30,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,102 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,039<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

IGBT-Modul IGBT-Module FF450R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|15000<br>14500<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 4900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||185<br>270<br>285||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 4900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||26,5<br>30,0<br>35,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 4900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||5,90<br>8,90<br>10,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,165|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,04||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 

3 

IGBT-Modul IGBT-Module FF450R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 

4 

## IGBT-Modul IGBT-Module 

## FF450R07ME4_B11 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 SS | , 900 es | 7<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>750 750 VGE = 13V<br>iy VGE = 11V // i /<br>VGE = 9V<br>/ c a ; /<br>600 600<br>/ / /<br>450 450<br>300 300<br>UAT |<br>I,/, /<br>150 150<br>Y<br>y<br>i<br>wo“ p<br>a d<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =300V<br>900 100<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>750 E J ) | & | Eoff, Tvj = 150°C BERR<br>80<br>— hs Pe er<br>600<br>Ww<br>iy 60 BERERERREEEP<br>/ [_] BERRAe<br>450<br>|i [ile] te BERRAZe 77<br>40 “|<br>300<br>Aa<br>ae<br>20<br>150<br>a<br>Py Ep eae<br>0 0<br>5 6 7 8 9 10 11 12 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Modul IGBT-Module 

## FF450R07ME4_B11 

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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =450A,V CE =300V<br>100 1<br>Eon, Tvj = 125°C | ZthJC : IGBT iy aa a eee<br>H— HE + +L +H]<br>| r EEoffon, T, T e vjvj = 125°C = 150°C Rsee TT|a et ee |<br>Eoff, Tvj = 150°C<br>80 $$ _<___——. “A, a |<br>PT. | |ldlC Ww PEUTIC UNI TM EIT ET<br>0,1<br>60 PF]PF ] ofof || fofft LyaFaJoo|4a| |ee|PTatT TT eeTTIeee et T eT<br>40 eee Ae ee |ST a TT<br>0,01<br>[eke<br>aay | LUIZi se ase | oa eS<br>20 | | [Af fo fd YATACT TT Tt TT<br>i: 1 2 3 4<br>r ] A] | yy fd 7a | ri[K/W]: 0,00759 0,01554 | 0,07309 0,00565 |<br>τ i[s]: 0,0003 0,00633 0,0367 1,67943<br>0 Pf] tT tt 0,001 1<br>0 2 4 6 8 10 12 14 16 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.8 Ω ,T vj =150°C<br>1000 900<br>IC, Modul Tvj = 25°C<br>900 IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>750<br>800<br>700<br>600<br>600<br>500 450<br>400<br>300<br>300<br>200<br>150<br>100<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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## IGBT-Modul IGBT-Module 

## FF450R07ME4_B11 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon t'5 Ω ,V CE =300V IF = 480A, V CE = 300 V<br>14 14<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>12 fF ee 12 Ey)<br>PRE ECE | -<br>eo<br>10 PPT | | re eet 10 PRI ) ] ) |<br>8 P| | eee 8 SS<br>6 BEES AReeeeeePL VA 6 EXC\.<br>Pi ye | tt | Ne<br>4 PAT yt ttTE TTttTE TTtt tttT 4 S| NEMSS Ff<br>2 Py | it | tt | 2 Py) | | Pose<br>CEE EEE Sree<br>0 0<br>0 150 300 450 600 750 900 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>Se ZthJC : Diode eee es t pe Rtyp<br>PTLN TT TETTTT TTTET TTTTT aa e eeeeeee ee<br>a a A e e<br>ML mic KE<br>0,1 10000<br>aSesYT TT eoei ateTa ta ea NTesES NN se ee<br>TTATTT TT a Ne a eeee<br>[NUN] [MAGLIO] 2 ee eee<br>SP [iON)] pot NE<br>0,01 ATT 1000<br>VIM EP ON<br>a ee el NS<br>PTa [TT] TTT ae TT ee lll TT aa eeeeeeee<br>i: 1 2 3 4<br>ri[K/W]: 0,01757 0,03075 0,10847 0,00781<br>2 τ i[s]: 0,00023 0,00599 a 0,03565 1,10676 | a<br>0,001 |Amm o «=| 100 |<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module FF450R07ME4_B11 

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## **Schaltplan�/�circuit_diagram_headline** 

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## **Gehäuseabmessungen�/�package�outlines** 

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In fin e o n<br>**----- End of picture text -----**<br>


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prepared�by:�KY date�of�publication:�2014-12-15<br>approved�by:�KV revision:�3.1<br>**----- End of picture text -----**<br>


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IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br>


## FF450R07ME4_B11 

## **Nutzungsbedingungen** 

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**----- Start of picture text -----**<br>
application.<br>**----- End of picture text -----**<br>


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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff450r07me4b11bpsa1/igbt-module-650v-560a-dual/dp/3889194)
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