# IGBT Module, Dual, 485 A, 1.55 V, 1.25 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377256/)

**URL**: https://novapart.co/products/FF400R07KE4HOSA1/igbt-module-dual-485-a-155-v-125-kw-150-c
**SKU**: FF400R07KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €86.2000
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:485A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:1.25kW; Collector Emitter Voltage V(br)ceo:650V; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.25kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 485A |
| Power Dissipation Pd | 1.25kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 485A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377256/)

IGBT-模块 IGBT-modules 

## FF400R07KE4 

VCES = 650V IC nom = 400A / ICRM = 800A 

## **典型应用** 

- 大功率变流器 

- 电机传动 

- UPS系统 

- 

- 

- 

## **电气特性** 

- 增加阻断电压至650V 

- 

- 高短路能力，自限制短路电流 

- 

- 

• High Short Circuit Capability, Self Limiting Short 

## **机械特性** 

- 

   - 

- • 

- 高爬电距离和电气间隙 

- • 绝缘的基板 

- 标封装 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF400R07KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF400R07KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-08<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>400<br>485<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1250<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 6,40 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,1<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,30<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>26,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,76<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 0,82Ω<br>td on<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 0,82Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>td off<br>0,40<br>0,43<br>0,44<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>tf<br>0,07<br>0,09<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 6500 A/µs (Tvj= 150°C)<br>RGon= 0,82Ω<br>Eon<br>2,10<br>3,55<br>4,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 0,82Ω<br>Eoff<br>16,0<br>20,5<br>21,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1500<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,12<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,03<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF400R07KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650|650|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|400|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|11000<br>10500<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 6500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||215<br>295<br>320||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 400 A, - diF/dt = 6500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||15,0<br>31,0<br>36,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 6500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,35<br>8,60<br>9,95||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,22|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,06||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-08 revision:�3.0 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## FF400R07KE4 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



4 

## IGBT-模块 IGBT-modules 

## FF400R07KE4 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>800 800<br>Tvj = 25°C VGE = 19V<br>720 FLs Tvj = 125°C ser / 720 EF "a VGE = 17V |ee / 7<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>640 ere / ‘ iv 640 VGE = 11V /<br>TT | YEE TTT<br>VGE = 9V<br>PP er[ys Ee Bey<br>560 560<br>480 480<br>CCECCCOGPEC) = e e e<br>400 400<br>320 320<br>ee ee eePanne<br>240 Re 240<br>PPE AT ee e nnLapee e eeeeeeee<br>160 Pleyel te 160 A<br>80 80<br>on VA<br>0 0<br>BPAR ee weAn<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon +=082 Ω ,R Goff =082 Ω ,V CE =300V<br>800 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>720 Tvj = 125°C 45 Eoff, Tvj = 125°C<br>E Tvj = 150°C LLA FO Eon, Tvj = 150°C E<br>Eoff, Tvj = 150°C<br>640 40<br>TT ) LK EB f ore<br>560 35<br>480 ee 30 Via 40°<br>ae7 Y 7,7<br>400 25<br>Ane eee ae<br>ee<br>320 20<br>240 See / [|] ee 15 ee1.ra 7 ee<br>eAne eee aes<br>ee<br>160 10<br>i Ae ee ve =<br>ee =<br>80 5<br>Lee<br>0 0<br>p oe [|] oe ee<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF400R07KE4 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =400A,V CE =300V<br>50 1<br>Eon, Tvj = 125°C | ZthJC : IGBT DB ee eee<br>45 mH Eoff, Tvj = 125°C V iliiii i iq [Re H—__| PEER EE<br>Eon, Tvj = 150°C a<br>Eoff, Tvj = 150°C<br>40 f= eel<br>TT T If IITeLe 0 PTE ETE EEE ET<br>35<br>0,1<br>30 PLY Ey TLL TrdgJ AA| SeTIA EINE EI e<br>Xe<br>25 PPLE 4  1 |<br>WAate<br>20 | Leckey“fA, | | | | | maaanY<br>0,01<br>15 PT CE Ft<br>10 PT] | LATEca EL LEE 7en| Titee Tt TT TT<br>i:    1    2    3    4<br>5 TMTA. TT TT TT fCPEI r τ Scie ii[K/W]:   [s]:    0,0072   0,01    0,0396   0,02    Ti 0,0384   0,05    0,0348   0,1    l<br>PELE<br>0 EEL EEE 0,001 EE or oo o<br>0 1 2 3 4 5 6 7 8 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RRESTEEK IGBT, #3528 ( RBSOA ) Emit: RE ee ( sha)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE ee V,R Goff =0.82 Ω ,T vj =150°C<br>900 800<br>IC, Modul Tvj = 25°C<br>800 IC, Chip 720 Tvj = 125°C<br>Ew) e Tvj = 150°C e<br>640<br>700<br>HH FE C<br>560<br>600<br>480<br>500<br>EEE Eee ge<br>400<br>400<br>HEA) Peer<br>320<br>300<br>HTT) Cee<br>240<br>PLEA J<br>200<br>160<br>100 PULL EEE 80 HEE EAA<br>0 PELL EEE LLL EEL 0 CC E BEACEEr<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## IGBT-模块 IGBT-modules 

## FF400R07KE4 

**==> picture [483 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =0.82 Ω ,V CE =300V IF =400A,V CE =300V<br>16 12<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>14<br>10<br>12<br>8<br>10<br>8 6<br>6<br>4<br>4<br>lA ian<br>2<br>2<br>0 0<br>0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC = f (t)<br>1<br>' {— ZthJC : Diode eat<br>o o TT<br>PT TT TTTTTT<br>a l l<br>| |<br>UM alllTT Tl<br>0,1<br>a<br>Pttt<br>YT TTTT<br>a<br>pot TATE<br>PLUMEa/| aETE EEE<br>0,01<br>a<br>PT TTTETT<br>PT TT TTTTTT<br>nL ee Pe || |<br>i:    1    2    3    4<br>ri[K/W]:   0,0132   0,0726   0,0704   0,0638<br>τ i[s]:    0,01    0,02    0,05    0,1<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF400R07KE4<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>Infineon<br>prepared�by:�MK date�of�publication:�2013-11-08<br>approved�by:�WR revision:�3.0<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FF400R07KE4 

## **使用条件和条款** 

使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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9 



## Links

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- [Supplier page](https://es.farnell.com/infineon/ff400r07ke4hosa1/igbt-module-dual-npn-1-55v-485a/dp/2377256)
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