# IGBT Module, Dual [Half Bridge], 500 A, 1.45 V, 1.25 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726137/)

**URL**: https://novapart.co/products/FF400R06KE3HOSA1/igbt-module-dual-half-bridge-500-a-145-v-125-kw
**SKU**: FF400R06KE3HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €143.7700
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:500A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:1.25kW; Collector Emitter Voltage V(br)ceo:600V; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | 62mm C |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Tab |
| Power Dissipation | 1.25kW |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 500A |
| Power Dissipation Pd | 1.25kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 500A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726137/)

## 技术信息�/�Technical�Information 

IGBT-模块 IGBT-modules 

## FF400R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

62mm�C-Serien�Modul�mit�Trench/Feldstop�IGBT3�und�Emitter�Controlled3�Diode� 62mm�C-Serien�module�with�trench/fieldstop�IGBT3�and�Emitter�Controlled3�diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF400R06KE3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlled3Diode<br>62mmC-Serienmodulewithtrench/fieldstopIGBT3andEmitterControlled3diode<br>preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>400<br>500<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>1250<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 6,40 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,30<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>26,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,76<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,49<br>0,52<br>0,53<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,05<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 7000 A/µs (Tvj= 150°C)<br>RGon= 1,5Ω<br>Eon<br>3,20<br>3,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4500 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>15,0<br>15,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2800<br>2000<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,12<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,03<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF400R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600|600|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|400|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|11000<br>10500<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 7000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||270<br>330<br>350||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 400 A, - diF/dt = 7000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||15,0<br>29,0<br>32,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 7000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,60<br>7,40<br>8,30||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,22|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,06||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-10-03 revision:�3.0 

prepared�by:�MK approved�by:�WR 

2 

IGBT-模块 IGBT-modules 

## FF400R06KE3 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



3 

IGBT-模块 IGBT-modules 

## FF400R06KE3 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>800 800<br>Tvj = 25°C VGE = 19V<br>720 Tvj = 125°C 720 VGE = 17V<br>F Tvj = 150°C LL et | VGE = 15V mz ft<br>VGE = 13V<br>640 Peer 640 VGE = 11V i ||<br>| | | t Lfr iio LoeT |<br>VGE = 9V<br>560 560<br>S i e e e<br>SRRRRRE see : eee<br>480 480<br>PUTT<br>400 400<br>TTT ee EE Ee<br>Poe7?a il /<br>320 320<br>240 PEEP 240 /<br>ET PE La ee e<br>i<br>160 PPT 160 | i<br>TA EET E e<br>SRR? eee Ae<br>80 80<br>Bee? AER eee<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =15 Ω ,R Goff =1.5 Ω ,V CE =300V<br>800 40<br>Tvj = 25°C Eon, Tvj = 125°C<br>720 Tvj = 125°C 36 Eoff, Tvj = 125°C<br>P Tvj = 150°C W] F Eon, Tvj = 150°C e<br>Eoff, Tvj = 150°C<br>640 32<br>et EB P ope<br>i y<br>f<br>560 |;i 28 Z<br>v4<br>480 24<br>400 20<br>pt |pg TE<br>320 16<br>pt | |et Ee<br>240 12<br>160 8<br>ee ee =a<br>80 PP A 4 ee<br>ee ee<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

## IGBT-模块 IGBT-modules 

## FF400R06KE3 

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Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1| C =400A,V CE =300V<br>60 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C ooo or TT TT TTT]<br>Eon, Tvj = 150°C a<br>50 | — Eoff ——— , Tvj = 150°C hii iY Po (— eo<br>ae eel<br>T T ] | tlZ PCCa a en<br>40 A 0,1 E R<br>a<br>rT TTYT<br>oy a TT TTT<br>vA el<br>30<br>20 P| JA dearLeper 0,01 |ZmaaanSUA INI IE LT<br>—_ 7]<br>~ (7) Titi tT TrTTTTTT<br>10 reyJ;7 | dt tl yd | 7SEa| Tit ge Tt E TT ttTTGG]<br>i:    1    2    3    4<br>ri[K/W]:   0,0072   0,0396   0,0384   0,0348<br>τ i[s]:    0,01    0,02    0,05    0,1<br>EA AeEL  eo oo o<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RRS IVER IGBT, He ( RBSOA) ERR —ARe weases ( sam)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =1.5 Ω ,T vj =150°C<br>900 800<br>IC, Modul Tvj = 25°C<br>800 IC, Chip 720 Tvj = 125°C<br>FE EL F Tvj = 150°C L LL ye<br>ee 640<br>700<br>560<br>re<br>600<br>480<br>ee eee e e<br>500<br>400<br>Pty}|- P EELEELELL aeayET<br>400<br>320<br>300<br>pf | tt ty 240 ECEPT eeYL<br>eee ee J<br>200<br>160<br>100 80<br>0 P| ft tf ty 0 C re e CE<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF400R06KE3 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon t's Ω ,V CE =300V IF = 400A, V CE = 300 V<br>12 12<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 11 Erec, Tvj = 150°C<br>— (come<br>10 10<br>9<br>8 8<br>PLL eer) fee eee<br>7<br>a po |<br>6 6<br>5<br>4 4 CE<br>3<br>2 2<br>1<br>0 0<br>0 100 200 300 400 500 600 700 800 0 2 4 6 8 10 12<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [238 x 280] intentionally omitted <==**

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6 

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7 

IGBT-模块 IGBT-modules 

## FF400R06KE3 

## **使用条件和条款** 

使用条件和条款 

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