# IGBT Module, Dual [Half Bridge], 375 A, 1.95 V, 1.8 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726136/)

**URL**: https://novapart.co/products/FF300R17ME4BOSA1/igbt-module-dual-half-bridge-375-a-195-v-18-kw-150
**SKU**: FF300R17ME4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €114.2100
**Stock**: 10+
**Lead Time**: 176 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:375A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:1.8kW; Collector Emitter Voltage V(br)ceo:1.7kV; Transis

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1.8kW |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 375A |
| Power Dissipation Pd | 1.8kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 375A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726136/)

IGBT-模块 IGBT-Module 

## FF300R17ME4 

VCES = 1700V IC nom = 300A / ICRM = 600A 

- **典型应用** • 电机传动 • 伺服驱动器 

- • UPS系统 • 风力发电机 

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**电气特性** 

- CEsat 

- T 

- VCEsat 

- **机械特性** • 高功率密度 

- • 绝缘的基板 • 标封装 

- CEsat 

- • T 

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技术信息�/�Technical�Information IGBT-模块IGBT-Module FF300R17ME4 

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## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF300R17ME4<br>IGBT-模块<br>IGBT-Module||
|---|---|
|preparedby:CU<br>approvedby:MK<br>dateofpublication:2014-06-06<br>revision:2.4<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>375<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1800<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 12,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,05<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>24,5<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,81<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,25<br>0,30<br>0,31<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,087<br>0,092<br>0,095<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>td off<br>0,73<br>0,88<br>0,92<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 4,7Ω<br>tf<br>0,28<br>0,53<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>72,0<br>92,0<br>100<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 4,7Ω<br>Eoff<br>61,0<br>98,5<br>110<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,083 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,029<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-Module FF300R17ME4 

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**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|14500<br>|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||370<br>440<br>460||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||75,0<br>125<br>140||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||40,5<br>78,5<br>90,5||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,13|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,046||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CU date�of�publication:�2014-06-06 approved�by:�MK revision:�2.4 

3 

IGBT-模块 IGBT-Module 

## FF300R17ME4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||3,4<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im 2HFAZE /terminaltoheatsink<br>tm<br>4 tm<br>/terminal to terminal|||14,5<br>13,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im 2HFAZE /terminal to heatsink<br>im + 2umf /terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|12,5<br>10,0<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,10<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-<br>6,0|Nm|
|重量<br>Weight||G||345|g|



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IGBT-模块<br>IGBT-Module<br>**----- End of picture text -----**<br>


## FF300R17ME4 

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I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE “as Tvj =150°C<br>600 600<br>Tvj = 25°C VGE = 20V<br>T a vj = 125°C v3 e V e GE = 15V / y<br>Tvj = 150°C VGE =12 V<br>500 500 VGE = 10V<br>VGE = 9V<br>VGE = 8V<br>E e ) vl Ee LL<br>400 400<br>300 PLA) 300 Lear<br>200 200<br>EUR er[ie Ll.<br>100 /; 100 2<br>BPARREEE annie<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStE IGBT, HaSeS (FRA) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE oo VGE ~HeVR Gon £33 Ω ,R Goff =47 Ω ,V CE =900V<br>600 300<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 275 Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>500 ETF] __ /\ 250 E Eoff, Tvj = 150°C T ieee F<br>225<br>et a ee af<br>400 200<br>175<br>SP eee<br>300 150<br>GRA<br>125<br>PUA) eZee<br>200 100<br>75<br>BED AnnEej pKa<br>100 50<br>25<br>ATT) ER<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

## IGBT-模块 IGBT-Module 

## FF300R17ME4 

## **初步数据** 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1| C =300A,V CE =900V<br>400 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>360 Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>320 = o y; fF e SSSe ee ll<br>280<br>T T aie<br>0,1<br>240200 Pt | x | ft ft} dd ar<br>160 | WA rT TTOh<br>vAZt ft ff dd | SITET<br>0,01<br>120 SCE) CCITT<br>80 = eee YYomni| Tit eloT TTTTee<br>i: 1 2 3 4<br>40 Pt EL TLL ag 0 r τ ii[K/W]:[s]: 0,0027670,0008 0,0127570,013 a] 0,058870,05 0,008760,6<br>0 PEE TEE EEE 0,001 too o<br>0 5 10 15 20 25 30 35 40 45 50 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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I reverse C CE bias )  safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE “i sV.R Goff =4.7 Ω ,T vj =150°C a<br>650 600<br>IC, Modul Tvj = 25°C<br>600 IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>550 Eeee r e l e e soy| 500 Ef a /<br>500<br>450 P tT || || || rtte /<br>400<br>400 PT | | tt 7<br>350 PT | | te “<br>300<br>300 Pet | tt |<br>250<br>PERE CFC<br>200<br>200 Pet | tt | f<br>150<br>PEE EE<br>100 Pt | | | rt rE 100<br>50<br>PRESSE LZ<br>0 P| | | | ct tt 0 wt<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-Module 

## FF300R17ME4 

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Erec =f(I F) Erec =f(R G)<br>RGon J, Ω ,V CE =900V IF = 3008, V CE = 900 V<br>130 120<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>120 Erec, Tvj = 150°C 110 Erec, Tvj = 150°C<br>110<br>100<br>100 Se o Ee<br>90 90<br>80<br>80<br>70<br>70<br>60<br>60<br>50<br>40 STS‘ 50 eee>| ~>h<br>30<br>7 le<br>40<br>20<br>ee 30<br>10<br>0 20<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30 35<br>IF [A] RG [ Ω ]<br>RAAB RE ees ARERRARBS BEBE<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>{— ZthJC : Diode et [I Rtyp ———<br>A HE Ett A<br>PT E TT TTT] E s ee<br>a a ee a De ee ss<br>a a a A a e e<br>0,1 e e a 10000 eS a a a<br>2 eee ee Ne Rs es Ss es<br>H a Se ——————<br>a ee ee Es Ne es<br>YT | TTY TTT TTT TTT TTT] a Ne i ee es ee<br>eg) aNO<br>Pi pf NP<br>0,01 AIIM POMEL TM 1000 EN ET<br>EEE Ee =<br>PE EE Ett A<br>PT ETT TTT] a es ee eses<br>CC et a SC<br>i: 1 2 3 4<br>ri[K/W]: 0,00819 0,03094 0,08177 0,0091<br>PT τ i[s]: 0,0008 0,013 T 0,05 f 0,6 ee ee ee ee<br>0,001 uM omc Sit 100 | |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

技术信息�/�Technical�Information IGBT-模块IGBT-Module FF300R17ME4 

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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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初步数据<br>Preliminary�Data<br>**----- End of picture text -----**<br>


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## **封装尺寸�/�package�outlines** 

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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CU date�of�publication:�2014-06-06 approved�by:�MK revision:�2.4 

8 

IGBT-模块 IGBT-Module 

## FF300R17ME4 

## **初步数据** 

## **使用条件和条款** 

使用条件和条款 

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我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 

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## Links

- [View this product on Novapart](https://novapart.co/products/FF300R17ME4BOSA1/igbt-module-dual-half-bridge-375-a-195-v-18-kw-150)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff300r17me4bosa1/igbt-module-n-ch-1-7kv-375a/dp/2726136)
---

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