# IGBT Module, Dual, 440 A, 1.95 V, 1.8 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377255/)

**URL**: https://novapart.co/products/FF300R17KE4HOSA1/igbt-module-dual-440-a-195-v-18-kw-150-c
**SKU**: FF300R17KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €97.7200
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:440A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:1.8kW; Collector Emitter Voltage V(br)ceo:1.7kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1.8kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 440A |
| Power Dissipation Pd | 1.8kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 440A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377255/)

IGBT-模块 IGBT-modules 

## FF300R17KE4 

VCES = 1700V IC nom = 300A / ICRM = 600A 

## **典型应用** 

- 大功率变流器 

- • 电机传动 • UPS系统 

- 风力发电机 

- 

- 

- 

- 

## **电气特性** 

- 

- CEsat 

- • 无与伦比的坚固性 

- VCEsat 

- 

- CEsat 

- 

- VCEsat 

## **机械特性** 

- 

- 

- 高爬电距离和电气间隙 

- • 绝缘的基板 

- 标封装 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF300R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF300R17KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MB<br>approvedby:RO<br>dateofpublication:2013-11-05<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>440<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1800<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 12,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,05<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>24,5<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,81<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 2,4Ω<br>td on<br>0,24<br>0,28<br>0,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 2,4Ω<br>tr<br>0,05<br>0,055<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 2,4Ω<br>td off<br>0,70<br>0,74<br>0,78<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 2,4Ω<br>tf<br>0,08<br>0,13<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 4800 A/µs (Tvj= 150°C)<br>RGon= 2,4Ω<br>Eon<br>63,0<br>86,0<br>93,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 2,4Ω<br>Eoff<br>55,0<br>90,0<br>100<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,083 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,033<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF300R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|14500<br>14000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||270<br>340<br>360||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,0<br>105<br>120||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||28,0<br>58,0<br>68,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,13|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,051||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�MB approved�by:�RO 

date�of�publication:�2013-11-05 revision:�2.2 

3 

IGBT-模块 IGBT-modules 

## FF300R17KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



4 

IGBT-模块 IGBT-modules 

## FF300R17KE4 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 600<br>Tvj = 25°C VGE = 20V<br>T | vj = 125°C ? ? e V s GE = 15V | / 7<br>Tvj = 150°C VGE = 12 V<br>500 500 VGE = 10V<br>VGE = 9V<br>VGE = 8V<br>400 400<br>300 300<br>200 200<br>if an<br>oo<br>100 100<br>be<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =24 Ω ,R Goff =24 Ω ,V CE =900V<br>600 200<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 180 Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>500 Eoff, Tvj = 150°C<br>160 |e<br>140<br>400 Se aa a i a7<br>120<br>300 100<br>80<br>200<br>60<br>40<br>100<br>20<br>ial (Ao<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

## IGBT-模块 IGBT-modules 

## FF300R17KE4 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =300A,V CE =900V<br>300 0,1<br>a pT<br>Eon, Tvj = 125°C ZthJC : IGBT<br>270 = Eon, Tvj = 150°C P| | | | | fea Ht EE EEEeetHE oo EE if<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>240 [= = beeaZ| | a ee|<br>210 P} | Tt] Laerafy aPI VET0 EIT| TTll<br>Sooper EZ<br>180<br>Sane?Y 4nnneeeA MAVi|<br>150 0,01<br>120 SEPtAy ZeaRReaeeYo YrPtZTEATU TT TTTEE FEEoT TitiTTT- Tnt<br>90 Pfr]Sf ft |} | ty PZUe<br>60 EP PPP yy tf PT CE ETT| TTll<br>i:    1    2    3    4<br>30 cccccccenen et r τ ii[K/W]:   [s]:    A 0,00276   0,0008    0,0127   0,013    0,0588   0,05    0,00874   0,6<br>0 PEL ETT EEL EL 0,001 a<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE “i sV.R Goff =2.4 Ω ,T vj =150°C a<br>800 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>700 Tvj = 150°C<br>EJI TOL) Ed)<br>500<br>600<br>400<br>500<br>400 300<br>300<br>200<br>200<br>PEE ELL Te 100 rT TF yy<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FF300R17KE4 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon ay Ω ,V CE =900V IF = 3008, V CE = 900 V<br>90 100<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>80 Erec, Tvj = 150°C 90 Erec, Tvj = 150°C<br>80<br>70 ee  eee ee e<br>70<br>See S e<br>60<br>60<br>a PP EEE<br>50<br>50<br>40 aryan PAR EE EL<br>40<br>30 pf4| | ft PL) OAKEY]Heese<br>30<br>20 Ao HEH<br>20<br>10 10<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 20 22 24<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC =f (t)<br>1<br>ZthJC : Diode<br>or o<br>PT E TTTTT]<br>o onnon Co<br>PMETAIN | T E-rtTIE n|<br>0,1<br>2 ee ee aeee e e ee<br>YT a | TTY TTT eeTTTeeTTT TTT]<br>a)<br>2a<br>0,01 ACAI | UAI CTI LUT<br>EEE HEE Eee<br>PT<br>a<br>PTETTee ee el<br>Ph oi iTT yT]<br>i:    1    2    3    4<br>ri[K/W]:   0,00819   0,03094   0,08177   0,0091<br>ti a τ i[s]:    0,0008    0,013    0,05    0,6<br>LUSoomr o<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

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**----- Start of picture text -----**<br>
技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF300R17KE4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>Infineon<br>prepared�by:�MB date�of�publication:�2013-11-05<br>approved�by:�RO revision:�2.2<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FF300R17KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

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9 



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