# IGBT Module, Dual, 450 A, 1.75 V, 1.6 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726133/)

**URL**: https://novapart.co/products/FF300R12ME4BOSA1/igbt-module-dual-450-a-175-v-16-kw-150-c
**SKU**: FF300R12ME4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €93.6600
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1.6kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1.6kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 450A |
| Power Dissipation Pd | 1.6kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 450A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726133/)

IGBT-模块 IGBT-modules 

## FF300R12ME4 

VCES = 1200V 

IC nom = 300A / ICRM = 600A 

**典型应用** 

- 电机传动 

- • 伺服驱动器 

- • UPS系统 • 风力发电机 

- **电气特性** • (i V CEsat • T 

- **机械特性** • 标封装 

- 

- 

- 

- 

- CEsat 

- • T 

- 

1 

> IGBT-模块IGBT-modules FF300R12ME4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF300R12ME4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CU<br>approvedby:MK<br>dateofpublication:2013-11-04<br>revision:3.1<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>450<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1600<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,25<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,3Ω<br>td on<br>0,17<br>0,18<br>0,19<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,3Ω<br>tr<br>0,05<br>0,05<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,3Ω<br>td off<br>0,45<br>0,56<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,3Ω<br>tf<br>0,07<br>0,11<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 80 nH<br>VGE= ±15 V, di/dt = 6050 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Eon<br>9,90<br>17,0<br>19,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 80 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 1,3Ω<br>Eoff<br>25,0<br>37,5<br>42,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,094 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,03<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF300R12ME4 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|19000<br>15500<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 6050 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||335<br>390<br>410||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 6050 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||30,5<br>58,0<br>67,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 6050 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||19,0<br>29,5<br>34,5||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,15|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,046||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CU date�of�publication:�2013-11-04 approved�by:�MK revision:�3.1 

3 

IGBT-模块 IGBT-modules 

## FF300R12ME4 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||14,5<br>13,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|12,5<br>10,0<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,20<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-<br>6,0|Nm|
|重量<br>Weight||G||345|g|



4 

## IGBT-模块 IGBT-modules 

## FF300R12ME4 

**==> picture [486 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 a | ) “ 600 es [|]<br>Tvj = 25°C a ra VGE = 19V 7<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>500 500 VGE = 13V<br>VGE = 11V<br>Je VGE = 9V : / /<br>400 400<br>fe / : a °<br>300 300<br>7, vA |<br>J<br>200 200<br>/<br>a<br>100 100<br>0 0<br>l ft ili } L AL<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =13 Ω ,R Goff =13 Ω ,V CE =600V<br>600 90<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 80 Eon, Tvj = 150°C<br>T i vj = 150°C P) i E Eoff, Tvj = 125°C<br>500 Eoff, Tvj = 150°C<br>70<br>400 P| i] i d/[}: 60 a eZ ’<br>50<br>300<br>| 40 ieAe”aei<br>Ae a<br>200 30<br>20<br>100 dy TA P|<br>eT<br>10<br>L le<br>0 0<br>eT | | i |<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

## IGBT-模块 IGBT-modules 

## FF300R12ME4 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =300A,V CE =600V<br>140 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eon, Tvj = 150°C ooo or TT TT TTT]<br>120 | E ——$— off, Tvj = 125°C Ti yd dd SS HH— E E HH} tH<br>Eoff, Tvj = 150°C<br>ee YT TT TE TTT rT TTT TT TTT<br>100 7 7 || |wa | eA Co<br>0,1<br>nea OIE TET EET |  TL<br>80 LYWA YT | | TT Vitti oT TTT TT TTT<br>ot TT TT EE<br>60<br>;J | a a<br>0,01<br>40 eeTne} J<br>T7IT TU tT Tt oTEt TT —T TTT<br>~VA EE<br>20 J a | i:    1    2    3    4<br>ri[K/W]:   0,00582   0,03201   0,03104   0,02813<br>LLLom τ i[s]:    0,01    0,02    0,05    c 0,1<br>0 0,001<br>0 PEEP 2 4 6  EEE) 8 10 12 14 16 0,001 Ett! 0,01 oer 0,1 1 10<br>RG [ Ω ] t [s]<br>RSL IGBT, #2SE ( RBSOA ) EES — RE Wee ( HAA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =1.3. Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC Ld , Chip ss Tvj = 125°C / "<br>600 Tvj = 150°C<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>100<br>100<br>0 PEE EEE ) 0 LL YEE<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FF300R12ME4 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon ty Ω ,V CE =600V IF = 3008, V CE = 600 V<br>50 40<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>45 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Ee J|) 35 EO<br>40<br>e e  ee 30<br>P ee e<br>35<br>~ ‘<br>va “ er 25 NSE EE<br>30<br>eee Si<br>25 ee 20 LN<br>20 re<br>; / 15 b- —| “77<br>15<br>Tae<br>10<br>10<br>5<br>5<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>AIAN — AE wees SURE ARMING BIE REIS<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>{— et [I ———<br>A TE EEE EE eee ee ee ee ee ee<br>PT E TT TTT] E s ee<br>a a ee a De ee ss<br>a ee el ee a ee ee ee<br>U M<br>0,1 ve mcomsCi(‘<‘iC 10000 Cd;<br>Per a<br>rT TUT YT Es Ne es<br>PT ETT TTT TTT] a Ne i ee es ee<br>A) A a<br>ee A ee ie 2 ee eee<br>0,01 UM 1000<br>ee eeMIE IE TM ENT——<br>PE Et Et [_Op<br>ee ee ee ell a es ee eses<br>CC eT a<br>i:    1    2    3    4<br>ri[K/W]:   0,009   0,0495   0,048   0,0435<br>I τ i[s]:    l 0,01    0,02    0,05    0,1    Pot EE<br>0,001 LM omc Slit 100 EE | |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF300R12ME4 

**==> picture [86 x 38] intentionally omitted <==**

## **接线图�/�circuit_diagram_headline** 

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## **封装尺寸�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CU date�of�publication:�2013-11-04 approved�by:�MK revision:�3.1 

8 

IGBT-模块 IGBT-modules 

## FF300R12ME4 

## **使用条件和条款** 

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9 



## Links

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> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.