# IGBT Module, Dual, 450 A, 1.75 V, 1.6 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377254/)

**URL**: https://novapart.co/products/FF300R12KT4HOSA1/igbt-module-dual-450-a-175-v-16-kw-150-c
**SKU**: FF300R12KT4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €93.3100
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1.6kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | 62mm C Series |
| Igbt Technology | IGBT4 - T4 |
| Igbt Termination | Screw |
| Power Dissipation | 1.6kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 450A |
| Power Dissipation Pd | 1.6kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 450A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377254/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FF300R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

62mm�C-Serien�Modul�mit�schnellem�Trench/Feldstop�IGBT4�und�und�optimierter�Emitter�Controlled�Diode� 62mm�C-series�module�with�fast�trench/fieldstop�IGBT4�and�optimized�Emitter�Controlled�Diode�� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FF300R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|62mmC-SerienModulmitschnellemTrench/FeldstopIGBT4undundoptimierterEmitterControlledDiode<br>62mmC-seriesmodulewithfasttrench/fieldstopIGBT4andoptimizedEmitterControlledDiode<br>preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-04<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>450<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1600<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,40<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>19,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,81<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,04<br>0,045<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>0,45<br>0,52<br>0,54<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,10<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 6000 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>16,5<br>25,0<br>30,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4500 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>19,5<br>29,5<br>32,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,093 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,032<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF300R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|19000<br>18000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||350<br>380<br>390||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||31,0<br>48,0<br>67,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||13,0<br>23,5<br>26,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,15|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,052||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-04 revision:�2.1 

prepared�by:�MK approved�by:�WR 

2 

IGBT-模块 IGBT-modules 

## FF300R12KT4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



3 

IGBT-模块 IGBT-modules 

## FF300R12KT4 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 a | y ra 600 es [|]<br>Tvj = 25°C VGE = 19V<br>TTvjvj = 125°C = 150°C JC VVGEGE = 17V = 15V<br>500 500 | VGE = 13V<br>VGE = 11V<br>VGE = 9V<br>400 400<br>300 300<br>/<br>200 200<br>f ;<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =18 Ω ,R Goff +=18 Ω ,V CE =600V<br>600 80<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C 70 Eon, Tvj = 150°C<br>500 Eoff, Tvj = 150°C<br>60<br>400<br>50<br>/ A<br>300 40<br>30<br>200<br>eZee<br>20<br>100<br>10<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

## IGBT-模块 IGBT-modules 

## FF300R12KT4 

## **初步数据** 

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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =300A,V CE =600V<br>150 ———— Eon, Tvj = 125°C 1 P ZthJC : IGBT o<br>135 Eoff, Tvj = 125°C yt | fd dq [Re HH—|EE HH} tH<br>Eon, Tvj = 150°C a<br>Eoff, Tvj = 150°C<br>120 fe eel<br>105 PT | fee| Rae Aa ee el<br>ae 0,1 TILEE ELLAL LT<br>9075 Pf | Jota}7 fd | PYT ETT ALTet H TTTttt tt<br>60 Pf can PCT Tn<br>| Ay tf} | ROTI MEETITI AOD<br>0,01<br>4530 eePLAYL ce| |enlt—_ Tipe-----7tota9 ee(7_ [| TT TT TT<br>i:    1    2    3    4<br>15 PT TT Tyrai yy---|-7 yd YTA TT  e r τ ii[K/W]:    OE [s]:     ETT 0,02418   0,01    Ty 0,02697   0,02    i 0,03022   0,05    0,01163   0,1    ]<br>0 PF | | tt | | e p 0,001 apool !<br>0 2 4 6 8 10 12 14 16 18 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =1.8 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>600 Tvj = 150°C<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>100<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF300R12KT4 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon J's Ω ,V CE =600V IF = 5004, V CE = 600 V<br>35 32<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>30 EO) Uy 28 Ee<br>24<br>ee ra LA T TE<br>25<br>20<br>20 Sy ler  aayr] ERA.  EEE EEE<br>16<br>WA BERND Senee<br>15 PIA a<br>12<br>10<br>| Pee<br>8<br>(Al | [tt] CSREES<br>5<br>4<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>ASA — RS PES<br>transient thermal impedance Diode, Inverter<br>ZthJC =f (t)<br>1<br>ZthJC : Diode<br>Ra  ee<br>i<br>a e a n e en el<br>0,1 cenita t am mntiiil<br>aa eeee el<br>2<br>a aN meat<br>ACL ETT aT<br>0,01<br>aes<br>PT [TTT] TTTee ee eee TTT<br>i<br>A(ee<br>i:    1    2    3    4<br>ri[K/W]:   0,039   0,0435   0,0487   0,0188<br>I τ i[s]:    0,01    0,02    0,05    0,1<br>TM<br>0,001 | oo m<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF300R12KT4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>


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7 

IGBT-模块 IGBT-modules 

## FF300R12KT4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



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