# IGBT Module, Dual, 460 A, 1.75 V, 1.6 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377253/)

**URL**: https://novapart.co/products/FF300R12KE4HOSA1/igbt-module-dual-460-a-175-v-16-kw-150-c
**SKU**: FF300R12KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €97.9400
**Stock**: 50+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:460A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1.6kW; Collector Emitter Voltage V(br)ceo:1.2kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1.6kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 460A |
| Power Dissipation Pd | 1.6kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 460A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377253/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FF300R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

62mm�C-Serien�Modul�mit�Trench/Feldstopp�IGBT4�und�optimierter�Emitter�Controlled�Diode� 62mm�C-series�module�with�trench/fieldstop�IGBT4�and�optimized�Emitter�Controlled�Diode�� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FF300R12KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|62mmC-SerienModulmitTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode<br>62mmC-seriesmodulewithtrench/fieldstopIGBT4andoptimizedEmitterControlledDiode<br>preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-04<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>460<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1600<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,50<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>19,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,70<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>td on<br>0,20<br>0,25<br>0,27<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,8Ω<br>tr<br>0,045<br>0,05<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>0,50<br>0,60<br>0,62<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,10<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 6000 A/µs (Tvj= 150°C)<br>RGon= 1,8Ω<br>Eon<br>16,5<br>25,0<br>30,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>23,5<br>35,0<br>39,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,093 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,032<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF300R12KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|19000<br>18000<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||360<br>400<br>410||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||30,0<br>56,0<br>66,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||14,0<br>26,0<br>28,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,15|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,052||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-04 revision:�2.1 

prepared�by:�MK approved�by:�WR 

2 

IGBT-模块 IGBT-modules 

## FF300R12KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



3 

IGBT-模块 IGBT-modules 

## FF300R12KE4 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 T | vj = 25°C / 7, 600 es VGE = 19V [|]<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>500 a 500 | VGE = 13V 7<br>VGE = 11V<br>VGE = 9V<br>400 400<br>ve /) : / —<br>(f / : a<br>300 300<br>200 200<br>/<br>a<br>100 100<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =18 Ω ,R Goff +=18 Ω ,V CE =600V<br>600 80<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C 70 Eon, Tvj = 150°C<br>500 Eoff, Tvj = 150°C<br>60<br>400<br>50<br>7<br>/: :<br>300 40 vA (<br>ra oe 4<br>30<br>200<br>y/ /, VA<br>20 7<br>100<br>10<br>Z Cal ;<br>0 0<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## FF300R12KE4 

## **初步数据** 

**==> picture [486 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =300A,V CE =600V<br>150 ———<— Eon, Tvj = 125°C 1 S ZthJC : IGBT S<br>135 Eoff, Tvj = 125°C y | | ff | HH— EE HH} tH<br>Eon, Tvj = 150°C YT TT TE TTT rT TTT TT TTT<br>Eoff, Tvj = 150°C _ ooo or TT TT TTT]<br>120 oa e n ee ll<br>105<br>0,1<br>90 Pf | | | 4ay ff | PetES E<br>75 Pf | | gy tf} | YTYT| TTTTrA T TTTTTTT T TT]TT<br>60 Pf | ZF“y tf} | 2fp<br>0,01<br>4530 Taesef ee ee YrT/TTIEA T itU fTTt T tTToT TTTTTTTToT TT TTT<br>i:    1    2    3    4<br>15 PA] TP Py yy a el r τ ii[K/W]:   [s]:    0,00558   0,01    0,03069   0,02    0,02976   0,05    l 0,02697   0,1<br>PETE nt es<br>0 EE Et y y 0,001 Lol<br>0 2 4 6 8 10 12 14 16 18 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RSL IGBT, #2SE ( RBSOA ) EMR =e wees ( HB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =1.8 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC Ld , Chip ss Tvj = 125°C / 1<br>600 Tvj = 150°C<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>100<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF300R12KE4 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon t'5 Ω ,V CE =600V IF = 300A, V CE = 600 V<br>40 35<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>35 a<br>30<br>ok ee<br>30<br>25<br>25<br>P| peep | .<br>20<br>Set TNT<br>20<br>15<br>15<br>| | | Steps<br>10<br>10 ee CULL eR<br>5<br>5<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>ZthJC : Diode<br>oo o<br>rT TT T T TT<br>a |<br>PTTTI TEE ET)<br>0,1 EaS e Satit an mati<br>PT TTee<br>rT TTTT]<br>Po TE<br>ee A ee ie<br>0,01 Ail<br>Att<br>Ze<br>rT TT TTTT<br>ae |||<br>i:    1    2    3    4<br>ri[K/W]:   0,009   0,0495   0,048   0,0435<br>I τ i[s]:    l 0,01    0,02    0,05    0,1<br>E NE<br>0,001 | im o<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF300R12KE4<br>**----- End of picture text -----**<br>


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初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>


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7 

IGBT-模块 IGBT-modules 

## FF300R12KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



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