# IGBT Module, Dual, 390 A, 1.55 V, 1.1 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3703595/)

**URL**: https://novapart.co/products/FF300R07ME4B11BPSA1/igbt-module-dual-390-a-155-v-11-kw-150-c
**SKU**: FF300R07ME4B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €85.7900
**Stock**: 10+
**Lead Time**: 176 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.1kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 390A |
| Power Dissipation Pd | 1.1kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 390A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703595/)

IGBT-Modul IGBT-Module 

## FF300R07ME4_B11 

VCES = 650V 

IC nom = 300A / ICRM = 600A 

- Hybrid-Nutzfahrzeuge 

- • Motorantriebe 

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- USV-Systeme 

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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom 

   - High Short Circuit Capability, Self Limiting Short 

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- T 

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- Kupferbodenplatte 

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- Standardgehäuse 

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IGBT-Modul IGBT-Module FF300R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF300R07ME4_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:KY<br>approvedby:KV<br>dateofpublication:2014-12-15<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>390<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1100<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 4,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,10<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,57<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>td on<br>0,068<br>0,069<br>0,072<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>tr<br>0,06<br>0,065<br>0,066<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>td off<br>0,38<br>0,41<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>tf<br>0,074<br>0,097<br>0,105<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4500 A/µs (Tvj= 150°C)<br>RGon= 2,2Ω<br>Eon<br>1,80<br>2,80<br>3,25<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 2,2Ω<br>Eoff<br>14,0<br>18,0<br>19,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,138 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,041<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

IGBT-Modul IGBT-Module FF300R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|8800<br>7850<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>210<br>225||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>22,0<br>25,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,05<br>6,45<br>7,45||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,215|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,041||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 

3 

IGBT-Modul IGBT-Module FF300R07ME4_B11 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



prepared�by:�KY date�of�publication:�2014-12-15 approved�by:�KV revision:�3.1 

4 

## IGBT-Modul IGBT-Module 

## FF300R07ME4_B11 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 a / y 600 es | 7<br>Tvj = 25°C VGE = 19V<br>540 f Tvj = 125°C LA et7 540 VGE = 17V L IAL<br>Tvj = 150°C / 7 ; VGE = 15V :<br>VGE = 13V<br>480 | | | ttt / rare 480 VGE = 11V /<br>a VGE = 9V 1 i<br>420 420<br>P e ep Jd ee |<br>ll eee a e<br>360 360<br>eee) Cee<br>300 300<br>240 A 240 eee Jee<br>7 /<br>180 [ 180 /<br>ORERRRE)<br>120 120<br>Gone 0G GnOns ee ee e)<br>lee Ae<br>60 /| 60 f<br>0 CLA“Ly 0 EEY<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =22 Ω ,R Goff =22 Ω ,V CE =300V<br>600 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>540 Tvj = 125°C 55 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>FL ee 50 ( Eoff, Tvj = 150°C<br>480<br>> E SeRREEe<br>[ 45 | |tt<br>420<br>¢ SERRE<br>40<br>ee<br>360<br>ee 35 nnn<br>300 30<br>ee ee eee<br>25<br>240<br>ee ee eeeee<br>20<br>ee ae<br>180<br>HAE<br>15<br>CCP) eee eee<br>120<br>10<br>AF) ee<br>60<br>5<br>Poe4 et | la<br>0 0<br>| ee<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Modul IGBT-Module 

## FF300R07ME4_B11 

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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =300A,V CE =300V<br>60 ———— 1 oe<br>Eon, Tvj = 125°C ZthJC : IGBT<br>55 Eoff, Tvj = 125°C , oo<br>Eon, Tvj = 150°C<br>50 | Eoff, Tvj = 150°C fH} ff} ft eg Co _ TT__TTT<br>fr an| aConona |<br>45<br>CCEEe Cea) CITIon cn<br>40 0,1<br>3530 Pt | | | | LAr] ] fd Corr<br>25 TT Ss = Ec<br>| | LA [bara cA<br>P| lengeBP ae ya<br>20 0,01<br>15 PET | Aa | ft ty| dd ooai oe<br>/L Pz<br>10 J | VC a Se i: 1 2 ee 3 4 ee l<br>ri[K/W]: 0,01056 0,02813 0,09163 0,00764<br>5 PTATTTTTTTr? 6 τ i[s]: 0,00027 0,00576 0,03717 3,96539<br>PE ooo<br>0 PPE 0,001 f l<br>0 2 4 6 8 10 12 14 16 18 20 22 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE 0 V,R Goff =2.2 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC, Chip 540 Tvj = 125°C<br>600 EJ) | F Tvj = 150°C L LL ye<br>a ees a g<br>480<br>500 PPLE) Fe e<br>420<br>360<br>400<br>Sn eet eeeeeees<br>300<br>| ie<br>300<br>COC EEE<br>240 PP eeve /<br>180<br>200<br>120<br>100<br>60<br>0 ef} ft ye 0 n a nan<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## IGBT-Modul IGBT-Module 

## FF300R07ME4_B11 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 39 Ω ,V CE =300V IF = 300 A, V CE = 300 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>Ff ee IE<br>8 8<br>7 7<br>6 6<br>Pitter Tt LAN ETE EEE EE<br>5 5 LAE EE<br>Pi [iv] “LT [ttt] TA<br>4 4<br>Play” Ep LEENA<br>3 3<br>7a CCCP RRRSEL OTE<br>y SSE<br>2 2<br>1 1<br>0 0<br>0 60 120 180 240 300 360 420 480 540 600 0 2 4 6 8 10 12 14 16 18 20 22<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>A —E——__—__—__—_——<br>ZthJC : Diode Rtyp<br>tee ol hE ————<br>A [J p<br>PTT TET PETE es s e<br>PETTITTE TTT ETT PET es ee<br>PULTE EINE ETT ETT LUT ry.<br>LTV T HIME THE EM LUMP 10000<br>=iil —S===SS=<br>0,1 | potNE<br>eet ae i A ee Ne ee eee<br>PCPTE 7TTTIT aNNX eee<br>LEHI A ETI EE 1000 ————_————<br>PATA UIT TL LT EE es ee ec IN<br>p24 || qe i: 1 2 3 4 ——<br>ri[K/W]: 0,02492 0,05671 0,12674 0,00857<br>τ i[s]: 0,00021 0,00557 0,03717 3,80109 pT<br>0,01 JN ooo 100 Pt<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

IGBT-Modul IGBT-Module FF300R07ME4_B11 

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## **Schaltplan�/�circuit_diagram_headline** 

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## **Gehäuseabmessungen�/�package�outlines** 

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In fin e o n<br>**----- End of picture text -----**<br>


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prepared�by:�KY date�of�publication:�2014-12-15<br>approved�by:�KV revision:�3.1<br>**----- End of picture text -----**<br>


8 

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IGBT-Modul<br>IGBT-Module<br>**----- End of picture text -----**<br>


## FF300R07ME4_B11 

## **Nutzungsbedingungen** 

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**----- Start of picture text -----**<br>
application.<br>**----- End of picture text -----**<br>


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## Links

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- [Supplier page](https://es.farnell.com/infineon/ff300r07me4b11bpsa1/igbt-module-650v-390a-1-1kw-press/dp/3703595)
---

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