# IGBT Module, Dual, 390 A, 1.55 V, 1.1 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3514415/)

**URL**: https://novapart.co/products/FF300R07ME4B11BOSA1/igbt-module-dual-390-a-155-v-11-kw-150-c
**SKU**: FF300R07ME4B11BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €78.4400
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 11Pins |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1.1kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual N Channel |
| Dc Collector Current | 390A |
| Power Dissipation Pd | 1.1kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 390A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3514415/)

IGBT-模块 IGBT-modules 

## FF300R07ME4_B11 

VCES = 650V 

IC nom = 300A / ICRM = 600A 

## **典型应用** 

- 商业性农用车辆 

- • 电机传动 • 太阳能应用 • UPS系统 

- 

- 

- 

- 

## **电气特性** 

- 增加阻断电压至650V 

- • 增加直流母线电压 

- • 高短路能力，自限制短路电流 

- 

- 

• High Short Circuit Capability, Self Limiting Short 

- 沟槽栅IGBT4 

- T 

- 

- T 

## **机械特性** 

- 集成NTC温度传感器 

- • 绝缘的基板 • 铜基板 

- 

- 坚固的自成型PressFIT压接安装 

- 标封装 

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- 

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1 

IGBT-模块 IGBT-modules FF300R07ME4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF300R07ME4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:KY<br>approvedby:MK<br>dateofpublication:2013-11-05<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>390<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1100<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 4,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,1<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,30<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,67<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,57<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>td on<br>0,068<br>0,069<br>0,072<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>tr<br>0,06<br>0,065<br>0,066<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>td off<br>0,38<br>0,41<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>tf<br>0,074<br>0,097<br>0,105<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4500 A/µs (Tvj= 150°C)<br>RGon= 2,2Ω<br>Eon<br>1,80<br>2,80<br>3,25<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 2,2Ω<br>Eoff<br>14,0<br>18,0<br>19,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,14<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,041<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

IGBT-模块 IGBT-modules FF300R07ME4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|8800<br>7850|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>210<br>225||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>22,0<br>25,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 4500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,05<br>6,45<br>7,45||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,215|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,041||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�KY date�of�publication:�2013-11-05 approved�by:�MK revision:�3.0 

3 

IGBT-模块 IGBT-modules 

## FF300R07ME4_B11 

|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||14,5<br>13,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|12,5<br>10,0<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|杂散电感,模块||LsCE||20||nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee~~<br>**S**eeM5ARSEAR VAY OyA AET<br>crew M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,00<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~||||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|重量<br>Weight||G||345||g|



4 

IGBT-模块 IGBT-modules 

## FF300R07ME4_B11 

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**----- Start of picture text -----**<br>
I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE “255 V Tvj =150°C<br>600 a / / 600 es | 7<br>Tvj = 25°C VGE = 19V<br>540 Tvj = 125°C 540 VGE = 17V<br>E Tvj = 150°C A e VGE = 15V ee<br>VGE = 13V<br>480 Po o ee 480 VGE = 11V Ye<br>VGE = 9V<br>420 420<br>P e ep Jd ee |<br>llhts eee a/ 7 e<br>360 360<br>eee) Cee<br>300 300<br>240 240<br>oe) = Ce<br>180 UE 180 E p<br>ORERRRE)/ /<br>120 120<br>LA Gone 0G GnOns ee ee e)<br>eee ti va<br>60 60<br>CLA| AeEE<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eStE IGBT, EBS (FAB) FFI IGBT, WBE ( HAA)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE oo VGE ~HeVR Gon S22 Ω ,R Goff  -=2.2 Ω ,V CE =300V<br>600 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>540 Tvj = 125°C 55 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>FLL LE | LE<br>50 Eoff, Tvj = 150°C<br>480<br>es e | pit tt<br>45<br>Ce ) Fc c<br>420<br>40<br>T E e e e<br>360<br>35<br>Fe<br>ee SRR<br>300 30<br>ee  ee 25 eee<br>240 oe<br>20<br>ey ae<br>180<br>ee eeee<br>15<br>120<br>Se eee 10 deen<br>a Ae eeadeeenene<br>60<br>5<br>A Ceaa<br>Poe<br>0 0<br>| ee<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF300R07ME4_B11 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =300A,V CE =300V<br>60 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>55 J Eoff, Tvj = 125°C | | tt dd, H—eeHE et+ +L +H]<br>Eon, Tvj = 150°C<br>50 | Eoff, Tvj = 150°C fH} ff} ft egZ| TooCrME oi oo<br>an ne E ET<br>45<br>e e CHM CI<br>40 0,1<br>35 Pt] | | | ft La] |] Seat i eelle cce tieeeet citttresatti<br>(7 a |<br>30 Pt | | | | LAr] ] fd PotCri TT a<br>SsVA = Ec<br>ee<br>25 = a ee ee<br>20 0,01<br>J ATT<br>1510 P| | aA7 |} ft tt ddd V7)YC TT  TTT<br>i:    1    2    3    4<br>ri[K/W]:   0,01056   0,02813   0,09163   0,00764<br>5 SP yAse e e τ i[s]:    0,00027    e 0,00576   0,03717    | 3,96539<br>0 PPEL EEE) 0,001 LALoo o<br>0 2 4 6 8 10 12 14 16 18 20 22 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RRREK IGBT, #2 ( RBSOA ) Emm RSt — WS wes ( RR)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =2.2 Ω ,T vj =150°C<br>700 600<br>IC, Chip Tvj = 25°C<br>IC, Modul 540 Tvj = 125°C<br>600 EJ) | F Tvj = 150°C L LL ye<br>— re el<br>480<br>500 ef} tt | LA 420 T aa<br>360<br>400<br>300<br>300<br>SRRRee ECE YL<br>240<br>200 ei |ELEE 180 Eeei f /|<br>120<br>100<br>60<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## IGBT-模块 IGBT-modules 

## FF300R07ME4_B11 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ay Ω ,V CE =300V IF = 3008, V CE = 300 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Fe Erec, Tvj = 150°C Lee 9 IF Erec, Tvj = 150°C E<br>8 8<br>eT EL) L E T TE<br>7 PPL 7<br>PiLaraLa ee UEO RR EL E E E<br>6 ’ LTA 6 ‘ EE EE<br>5 PPL| EEE 5 ENS\ EE<br>4 PPATL Ee 4 ERA<br>3 3<br>Att tty A Ss<br>2 2<br>1 1<br>0 0<br>0 60 120 180 240 300 360 420 480 540 600 0 2 4 6 8 10 12 14 16 18 20 22<br>IF [A] RG [ Ω ]<br>PAM RS EES RREARARBE BEStE<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>_—aoo == ——<br>A ee ll a cer ES<br>a | DO<br>PEM a a | es<br>TIE TIT ry.<br>10000<br>PATE ENE ETI UTI Ne ee<br>il a<br>0,1 a| a SSS === =<br>aA Znee ll aNN\ eee<br>PL TIAL ETE TTT TTT 1000 ——<br>PATA UIT TL LT EE a<br>CTA cL Con Eicon i f<br>i:    1    2    3    4<br>ri[K/W]:   0,02492   0,05671   0,12674   0,00857<br>τ i[s]:    0,00021   0,00557   0,03717   3,80109<br>a er<br>0,01 J occ 100 {| ft | ft ft<br>0,0001 0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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## 技术信息�/�Technical�Information 

IGBT-模块 IGBT-modules FF300R07ME4_B11 

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## **封装尺寸�/�package�outlines** 

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8 

## IGBT-模块 IGBT-modules FF300R07ME4_B11 

## **使用条件和条款** 

使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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保留产品规格书的修改权 

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## Links

- [View this product on Novapart](https://novapart.co/products/FF300R07ME4B11BOSA1/igbt-module-dual-390-a-155-v-11-kw-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff300r07me4b11bosa1/igbt-module-dual-n-channel-650v/dp/3514415)
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