# IGBT Module, Dual, 320 A, 1.85 V, 1.05 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726127/)

**URL**: https://novapart.co/products/FF225R12ME4BOSA1/igbt-module-dual-320-a-185-v-105-kw-150-c
**SKU**: FF225R12ME4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €63.8000
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:320A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:1.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transi

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.05kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 320A |
| Power Dissipation Pd | 1.05kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 320A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726127/)

IGBT-模块 IGBT-modules 

## FF225R12ME4 

VCES = 1200V 

IC nom = 225A / ICRM = 450A 

**典型应用** 

- 电机传动 

- • 伺服驱动器 

- • UPS系统 • 风力发电机 

- **电气特性** • (i V CEsat • T 

- **机械特性** • 标封装 

- 

- 

- 

- 

- CEsat 

- • T 

- 

1 

> IGBT-模块IGBT-modules FF225R12ME4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF225R12ME4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CU<br>approvedby:MK<br>dateofpublication:2013-11-04<br>revision:3.2<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>225<br>320<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>450<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1050<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 225 A, VGE= 15 V<br>IC= 225 A, VGE= 15 V<br>IC= 225 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,10<br>2,15<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 7,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,55<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,3<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>13,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,705<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 225 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 225 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,04<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 225 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,38<br>0,47<br>0,50<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 225 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,07<br>0,09<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 225 A, VCE= 600 V, LS= 80 nH<br>VGE= ±15 V, di/dt = 5750 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>6,80<br>12,5<br>15,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 225 A, VCE= 600 V, LS= 80 nH<br>VGE= ±15 V, du/dt = 3400 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>17,0<br>26,5<br>29,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>900<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,14<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,031<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF225R12ME4 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|225|A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|450|A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|10000<br>8100<br>|A²s<br>A²s|



## **特征值�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 225 A, VGE= 0 V<br>IF= 225 A, VGE= 0 V<br>IF= 225 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 225 A, - diF/dt = 5750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||300<br>320<br>340||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 225 A, - diF/dt = 5750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||22,5<br>43,0<br>49,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 225 A, - diF/dt = 5750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||12,0<br>22,0<br>25,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,19|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,042||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CU date�of�publication:�2013-11-04 approved�by:�MK revision:�3.2 

3 

IGBT-模块 IGBT-modules 

## FF225R12ME4 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||14,5<br>13,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|12,5<br>10,0<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,30<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-<br>6,0|Nm|
|重量<br>Weight||G||345|g|



4 

## IGBT-模块 IGBT-modules 

## FF225R12ME4 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>450 a nav 450 es | 1<br>Tvj = 25°C VGE = 19V<br>E Tvj = 125°C v ra VGE = 17V 1 / _<br>400 400<br>O Tvj = 150°C E] F VGE = 15V OE<br>VGE = 13V<br>350 to TT ase 350 L VGE = 11V e<br>VGE = 9V<br>PP |<br>300 300<br>itt Pa F e<br>PP APE L t/ Le<br>250 250<br>fv ny<br>200 SRRn a eee, 200 ,  eeea°<br>vA<br>150 SRE)| 150 eee<br>Ban) t eee eeeeee[1 2<br>100 100<br>50 50<br>BaP anna ge |<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStE IGBT, HaSeS (FRA) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>450 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>400 Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>50 Eoff, Tvj = 150°C<br>FLL | Ag eeaaa<br>Po o A :<br>350<br>300 40<br>POCEEr PCE) «LT T E Le<br>250<br>Sees) eeeeeeeeneran<br>30<br>200<br>SERRE 7 A are ,<br>150 20<br>PP Ue dA Ane LO 7 |AFa<br>100<br>10<br>EP Ane A<br>50<br>4 AF<br>p e<br>0 0<br>| TE TE |<br>5 6 7 8 9 10 11 12 13 14 0 50 100 150 200 250 300 350 400 450<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF225R12ME4 

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**----- Start of picture text -----**<br>
switchingFFRIRE IGBT,losses HAIGBT,Inverter( A) (typical) transientBeASTARAithermalIGBT, iimpedance 3535 IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =225A,V CE =600V<br>80 ___|__] 1 U===_—— 0... S00; oes sana<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eon, Tvj = 150°C ror e ee<br>70 Eoff, Tvj = 125°C T if fd | HO PT TT TFee T<br>Eoff, Tvj = 150°C ce a e e|<br>—— ko A |<br>60<br>0,1 D o<br>50 yy aywaoe“7oeZ| 7 | py Pa T TTeAeee0et |<br>40<br>30 Pf amZz Lf | aERATae RR<br>WA - 0,01 VANE CAI CAME | ET<br>PAZeete tH<br>20 7YL 4Zatti|ee |<br>i:    1    2    3    4<br>10 ri[K/W]:   0,0084   0,0462   0,0448   0,0406<br>τ i[s]:    0,01    0,02    0,05    0,1<br>0 0,001<br>ee ee alliin i<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rin2SLF K IGBT, ass ( RBSOA ) LEG mE RB Fes ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =1.6 Ω ,T vj =150°C<br>500 450<br>IC, Modul Tvj = 25°C<br>450 F IC, Chip E a Tvj = 125°C [i<br>Tvj = 150°C<br>375<br>400<br>350<br>300<br>300<br>po} | ft | ?<br>250 225<br>200<br>150<br>150<br>100<br>75<br>50<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FF225R12ME4 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = 208 A, V CE = 600 V<br>40 30<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>35<br>ET iti) } 25 Eo}<br>P E td<br>30<br>“7 20 \ S<br>25 TT] [eeeEL debs RORREEeTT<br>Peer | Ne<br>20 15<br>15<br>COEF) JSSREE<br>10<br>10<br>5<br>5<br>0 0<br>0 50 100 150 200 250 300 350 400 450 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [487 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>{— et [I ———<br>Re pe<br>PTaHHO TT TTT |TTT aa  ee eeeeee eeee<br>0,1 AeT TES 10000 e e<br>UMM EE<br>YT Ty TT ES NN se ee<br>a) ee el a Ne a ee<br>el PNee<br>a | 2 ee eee<br>0,01 1000<br>PASAU EETAIN CUItHUM ffaEN<br>PEE ————<br>P| PT TT TTT TTT aa eeee ee<br>i:    1    2    3    4<br>ri[K/W]:   0,0114   0,0627   0,0608   0,0551<br>PT τ i[s]:    0,01    0,02    T 0,05    0,1    f a<br>0,001 LM Somes } «SC 100  dL<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF225R12ME4 

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## **接线图�/�circuit_diagram_headline** 

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## **封装尺寸�/�package�outlines** 

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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CU date�of�publication:�2013-11-04 approved�by:�MK revision:�3.2 

8 

IGBT-模块 IGBT-modules 

## FF225R12ME4 

## **使用条件和条款** 

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9 



## Links

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- [Supplier page](https://es.farnell.com/infineon/ff225r12me4bosa1/igbt-module-n-ch-1-2kv-320a/dp/2726127)
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