# IGBT Module, Dual, 310 A, 1.95 V, 1.25 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377250/)

**URL**: https://novapart.co/products/FF200R17KE4HOSA1/igbt-module-dual-310-a-195-v-125-kw-150-c
**SKU**: FF200R17KE4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €85.8500
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:Dual NPN; DC Collector Current:310A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:1.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Tran

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.25kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual NPN |
| Dc Collector Current | 310A |
| Power Dissipation Pd | 1.25kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 310A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377250/)

IGBT-模块 IGBT-modules 

## FF200R17KE4 

VCES = 1700V IC nom = 200A / ICRM = 400A 

## **典型应用** 

- 大功率变流器 

- • 电机传动 • UPS系统 • 风力发电机 

- 

- 

- 

- 

## **电气特性** 

- 

- CEsat 

- • 无与伦比的坚固性 

- VCEsat 

- 

- CEsat 

- 

- VCEsat 

## **机械特性** 

- 

- 

- 高爬电距离和电气间隙 

- • 绝缘的基板 

- 标封装 

- 

- 

- 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF200R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF200R17KE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MB<br>approvedby:RO<br>dateofpublication:2013-11-05<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>200<br>310<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1250<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 8,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,30<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,8<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,58<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,6Ω<br>td on<br>0,24<br>0,28<br>0,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 200 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,6Ω<br>tr<br>0,05<br>0,055<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>td off<br>0,70<br>0,74<br>0,78<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 200 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>tf<br>0,08<br>0,13<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 3200 A/µs (Tvj= 150°C)<br>RGon= 3,6Ω<br>Eon<br>53,0<br>72,0<br>77,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 900 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 3,6Ω<br>Eoff<br>35,0<br>57,0<br>64,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>900<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,12<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,035<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF200R17KE4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700|1700|V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|200|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|10000<br>9500<br>|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||200<br>240<br>260||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 200 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,0<br>85,0<br>90,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 3200 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||23,0<br>45,0<br>50,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,16|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,047||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�MB approved�by:�RO 

date�of�publication:�2013-11-05 revision:�2.2 

3 

IGBT-模块 IGBT-modules 

## FF200R17KE4 

## **初步数据** 

|#R_<br>| Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||4,0<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||29,0<br>23,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|23,0<br>11,0<br>> 400<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,01|K/W|
|杂散电感,模块||LsCE||20|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|RCC'+EE'<br>0,70<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|HeeM6ARSEAR VAY AyAEAET<br>Screw M6<br>- Mounting according to valid application note|M|2,5|-<br>5,0|Nm|
|重量<br>Weight||G||340|g|



4 

## IGBT-模块 IGBT-modules 

## FF200R17KE4 

## **初步数据** 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>400 400<br>Tvj = 25°C VGE = 20V<br>360 Tvj = 125°C 360 VGE = 15V<br>E Tvj = 150°C LI) P VGE =12 V oe<br>VGE = 10V<br>320 320 VGE = 9V<br>VGE = 8V<br>ee ee = TOA Ce<br>280 e eee 280 e e<br>240 240<br>CCEA COCO<br>200 200<br>160 160<br>120 ee 120<br>80 80<br>ee ee es 2<br>i ff [i 2<br>40 40<br>PP eee eeeA<br>0 0<br>AR eeeae<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStE IGBT, HaSeS (FRA) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =36 Ω ,R Goff =36 Ω ,V CE =900V<br>400 T | vj = 25°C / a 200 S E S on, Tvj TS  = 125°C | ,<br>360 Tvj = 125°C 180 Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>320 ae a ie i 160 FoolJE<br>280 140<br>p i tt yetPEE E EEA<br>240 120<br>200 100<br>PtP otva ee<br>pp ee eee<br>160 80<br>A eee<br>120 60<br>PP YY<br>ee Es<br>80 40<br>4g eee eecae<br>40 20<br>eee eeeee<br>Pe<br>0 0<br>| | TT |<br>5 6 7 8 9 10 11 12 13 0 40 80 120 160 200 240 280 320 360 400<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF200R17KE4 

## **初步数据** 

**==> picture [486 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =4+15V,1 C =200A,V CE =900V<br>220 —— 1 [oe<br>Eon, Tvj = 125°C ZthJC : IGBT<br>200 Eon, Tvj = 150°C Loft fe44 HCoo o or<br>Eoff, Tvj = 125°C<br>180 Eoff, Tvj = 150°C 1 fl ee | |T TT<br>160 S ce e> Zl<br>A LAIELAIN E<br>140 aa 0,1 Sa | OO cc 0 a| t<br>, | fT TTT YTTT<br>120 P|a ff aadtm eae 1  ee e eee<br>100<br>80 ursTPPee HTTPP” TPPTTT<br>0,01<br>A) A<br>60<br>40 ppp on i<br>i:    1    2    3    4<br>Pp a ge ri[K/W]:   0,00399   0,0184   0,085    | 0,0126<br>20 τ i[s]:    0,0008    0,013    0,05    0,6<br>0 0,001<br>0 5 10 15 20 25 30 35 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieLS TF IGBT, #428 ( RBSOA ) EM ESE REE ( AB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =4+15V,R Goff =3.6 Ω ,T vj =150°C<br>500 400<br>IC, Modul Tvj = 25°C<br>450 | IC, Chip pet} 360 Tvj = 125°C J<br>Tvj = 150°C<br>SL |<br>PT T]<br>400 320<br>Ty ethyl af<br>ee<br>350 ee 280 ee e<br>|<br>300 Fe 240 ee<br>250 200<br>200 160<br>150 120<br>100 Fe ee 80<br>50 40<br>ee<br>0 ee eee 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FF200R17KE4 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon M4 Ω ,V CE =900V IF = 500A, V CE = 900 V<br>70 60<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 55 Erec, Tvj = 150°C<br>60 —— a<br>50<br>45<br>50 P o e)ae ‘| cae O to . R<br>40<br>40 oaoF 35 RNeeeN eeeye<br>30<br>LYWa P|<br>30 “ 25 | | | | | |<br>20<br>20<br>15<br>10<br>10<br>5<br>0 0<br>0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 35<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [238 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC<br>1<br>ZthJC : Diode<br>Ra  ee<br>i<br>A e nen el<br>0,1 UIIEA o<br>aa eeee el<br>a)<br>OTT REEL A<br>0,01 ACM<br>LAIN LTT UT<br>PT TTTTTTTTT<br>i<br>an ||<br>i:    1    2    3    4<br>ri[K/W]:   0,005324098   0,02454626   0,1132742   0,01685547<br>| τ i[s]:    0,0008    0,013    ! 0,05    0,6<br>Cor o<br>0,001 oo l l<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

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**----- Start of picture text -----**<br>
技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF200R17KE4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>封装尺寸�/�package�outlines<br>Infineon<br>prepared�by:�MB date�of�publication:�2013-11-05<br>approved�by:�RO revision:�2.2<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FF200R17KE4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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9 



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