# IGBT Module, Dual, 295 A, 1.7 V, 1.05 kW, 125 °C, Module
**URL**: https://novapart.co/products/FF200R12KE3HOSA1/igbt-module-dual-295-a-17-v-105-kw-125-c
**SKU**: FF200R12KE3HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €92.1700
**Stock**: 10+
**Lead Time**: 92 days (indicative)
## Description
Transistor Polarity:N Channel; DC Collector Current:295A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:1.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transis
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | - |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1.05kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 295A |
| Power Dissipation Pd | 1.05kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 295A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2726122/)
技术信息�/�Technical�Information IGBT-模块IGBT-modules FF200R12KE3
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation
FF200R12KE3
IGBT-模块
IGBT-modules||
|---|---|
|preparedby:MM
approvedby:WR
dateofpublication:2013-10-02
revision:3.1
**IGBT,逆变器/IGBT,Inverter**
**最大额定值/MaximumRatedValues**
集电极－发射极电压
Collector-emittervoltage
Tvj= 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC= 80°C, Tvj max= 150°C
TC= 25°C, Tvj max= 150°C
IC nom
IC
200
295
A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP= 1 ms
ICRM
400
A
总功率损耗
Totalpowerdissipation
TC= 25°C, Tvj max= 150
Ptot
1050
W
栅极－发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
**特征值/CharacteristicValues**
min.
typ.
max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage
IC= 200 A, VGE= 15 V
IC= 200 A, VGE= 15 V
VCE sat
1,70
2,00
2,15
V
V
Tvj= 25°C
Tvj= 125°C
栅极阈值电压
Gatethresholdvoltage
IC= 8,00 mA, VCE= VGE, Tvj= 25°C
VGEth
5,0
5,8
6,5
V
栅极电荷
Gatecharge
VGE= -15 V ... +15 V
QG
1,90
µC
内部栅极电阻
Internalgateresistor
Tvj= 25°C
RGint
3,8
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cies
14,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cres
0,50
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE= 1200 V, VGE= 0 V, Tvj= 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE= 0 V, VGE= 20 V, Tvj= 25°C
IGES
400
nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC= 200 A, VCE= 600 V
VGE= ±15 V
RGon= 3,6Ω
td on
0,25
0,30
µs
µs
Tvj= 25°C
Tvj= 125°C
上升时间(电感负载)
Risetime,inductiveload
IC= 200 A, VCE= 600 V
VGE= ±15 V
RGon= 3,6Ω
tr
0,09
0,10
µs
µs
Tvj= 25°C
Tvj= 125°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC= 200 A, VCE= 600 V
VGE= ±15 V
RGoff= 3,6Ω
td off
0,55
0,65
µs
µs
Tvj= 25°C
Tvj= 125°C
下降时间(电感负载)
Falltime,inductiveload
IC= 200 A, VCE= 600 V
VGE= ±15 V
RGoff= 3,6Ω
tf
0,13
0,18
µs
µs
Tvj= 25°C
Tvj= 125°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC= 200 A, VCE= 600 V, LS= 80 nH
VGE= ±15 V
RGon= 3,6Ω
Eon
15,0
mJ
mJ
Tvj= 25°C
Tvj= 125°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
IC= 200 A, VCE= 600 V, LS= 80 nH
VGE= ±15 V
RGoff= 3,6Ω
Eoff
35,0
mJ
mJ
Tvj= 25°C
Tvj= 125°C
短路数据
SCdata
VGE ≤15 V, VCC= 900 V
VCEmax= VCES-LsCE·di/dt
ISC
800
A
Tvj= 125°C
tP ≤10 µs,
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,12
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
125
°C||
|preparedby:MM|dateofpublication:2013-10-02|
|---|---|
|approvedby:WR|revision:3.1|
1
> IGBT-模块IGBT-modules FF200R12KE3
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation
FF200R12KE3
IGBT-模块
IGBT-modules||
|---|---|
|preparedby:MM
approvedby:WR
dateofpublication:2013-10-02
revision:3.1
**二极管,逆变器/Diode,Inverter**
**最大额定值/MaximumRatedValues**
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj= 25°C
VRRM
1200
V
连续正向直流电流
ContinuousDCforwardcurrent
IF
200
A
正向重复峰值电流
Repetitivepeakforwardcurrent
tP= 1 ms
IFRM
400
A
I2t-值
I²t-value
VR= 0 V, tP= 10 ms, Tvj= 125°C
I²t
7800
A²s
**特征值/CharacteristicValues**
min.
typ.
max.
正向电压
Forwardvoltage
IF= 200 A, VGE= 0 V
IF= 200 A, VGE= 0 V
VF
1,65
1,65
2,15
V
V
Tvj= 25°C
Tvj= 125°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF= 200 A, - diF/dt = 2000 A/µs (Tvj=125°C)
VR= 600 V
VGE= -15 V
IRM
150
190
A
A
Tvj= 25°C
Tvj= 125°C
恢复电荷
Recoveredcharge
IF= 200 A, - diF/dt = 2000 A/µs (Tvj=125°C)
VR= 600 V
VGE= -15 V
Qr
20,0
36,0
µC
µC
Tvj= 25°C
Tvj= 125°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF= 200 A, - diF/dt = 2000 A/µs (Tvj=125°C)
VR= 600 V
VGE= -15 V
Erec
9,00
17,0
mJ
mJ
Tvj= 25°C
Tvj= 125°C
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,20
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
125
°C
**模块/Module**
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
模块基板材料
Materialofmodulebaseplate
Cu
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
20,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 425
min.
typ.
max.
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,01
K/W
杂散电感,模块
Strayinductancemodule
LsCE
20
nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
RCC'+EE'
0,70
mΩ
储存温度
Storagetemperature
Tstg
-40
125
°C
模块安装的安装扭距
Mountingtorqueformodulmounting
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
-
5,0
Nm
重量
Weight
G
340
g||
2
## IGBT-模块 IGBT-modules
## FF200R12KE3
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**----- Start of picture text -----**
IC =f(V CE) IC =f(V CE)
VGE =15V Tvj = 125°C
400 400
Tvj = 25°C VGE = 19V
360 F= Tvj = 125°C j)a fe 360 | VGE = 17V L yeALT |
VGE = 15V
VGE = 13V
320 320 VGE = 11V
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VGE = 9V
280 280
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80 80
40 40
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0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V] VCE [V]
[A] [A]
IC IC
**----- End of picture text -----**
**==> picture [487 x 280] intentionally omitted <==**
**----- Start of picture text -----**
IC =f(V GE) Eon =f(l),E C off =f(I C)
VCE =20V VGE =+15V,R Gon =36 Ω ,R Goff =36 Ω ,V CE =600V
400 80
Tvj = 25°C Eon, Tvj = 125°C
360 Tvj = 125°C Eoff, Tvj = 125°C
70
a ne
320
60
280
SAeere eto HE
50
240
200 40
pf | | eT SERREEZEED
160
30
120
pf | fz) Hat ae
20
80
ae eee eee
/ tery |
10
40
Ae er
im
0 0
Piey TTT) l4rl
5 6 7 8 9 10 11 12 0 40 80 120 160 200 240 280 320 360 400
VGE [V] IC [A]
[A]
IC E [mJ]
**----- End of picture text -----**
3
## IGBT-模块 IGBT-modules
## FF200R12KE3
**==> picture [486 x 596] intentionally omitted <==**
**----- Start of picture text -----**
Eon =f(R),E G off =f(R G) ZthJC = f (t)
VGE =+15V,| C =200A,V CE =600V
100 1
Eon, Tvj = 125°C ZthJC : IGBT
90 TT Eoff, Tvj = 125°C yA HH—ooo E or ETTHH}TTtHTTT]
80 Sanna| [| yWA YTaa TT TEa TTT enrT TTT TT TTT
70
Z ML A
/ 0,1 H M
60 ZL er ee ee
50 Pf | | | wT ff | PE=F TTT
40 Pf ZL POT
| | Ky | fd COO TI MEETITI ROO
0,01
30 eaeJ [|] AIT7cTE Tl
20 feLo ee ee cccees eee
i: 1 2 3 4
10 rr] Tf] tf yd YTe T eT r τ ii[K/W]: [s]: aaTE 0,00228 0,00001187 eTTT 0,00683 0,002364 rT TTTG 0,06045 0,02601 0,05044 0,06499 TT TTT||
0 PE EE EE LE Ly 0,001 nt Loo|
0 4 8 12 16 20 24 28 32 36 0,001 0,01 0,1 1 10
RG [ Ω ] t [s]
RwRELIEK IGBT, #2 ( RBSOA ) Fa mESstt Re ee ( BB)
reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)
IC =f(V CE) IF =f(V F)
VGE SVR Goff =3.6 Ω ,T vj =125°C
450 400
IC, Modul Tvj = 25°C
400 EeL IC, Chip ill | 360 FU Tvj = 125°C
320
350
280
300
240
p p PELE ee
250
200
Saee COECEEC ALL
200
160
150
pf of ttyHT 120 COCCEPETE E PECeE
100
50 eee 8040 ee ane
AWA
0 Pi ft | EN | 0 UL AS E
0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V] VF [V]
[K/W]
E [mJ]
thJC
Z
[A] [A]
IC IF
**----- End of picture text -----**
4
**==> picture [66 x 20] intentionally omitted <==**
**----- Start of picture text -----**
IGBT-模块
IGBT-modules
**----- End of picture text -----**
## FF200R12KE3
**==> picture [485 x 596] intentionally omitted <==**
**----- Start of picture text -----**
Erec =f(I F) Erec =f(R G)
RGon !'5 Ω ,V CE =600V IF = 200A, V CE = 600 V
25 25
Erec, Tvj = 125°C Erec, Tvj = 125°C
20 - -- || 20 |
15 15
10 / 10 NO
5 5
0 0
0 50 100 150 200 250 300 350 400 0 4 8 12 16 20 24 28 32 36
IF [A] RG [ Ω ]
RA MS eee
transient thermal impedance Diode, Inverter
ZthJC =f (t)
1
Le
ZthJC : Diode
H— ccc
a|Foo
e l
| | el
vill
0,1
ee
YtPT TT [TTY] ZTTT)
en
ay 2 | |
P E TE ITI
5740
i: 1 2 3 4
ri[K/W]: 0,00378 0,01136 0,10088 0,08398
τ i[s]: 0,00001187 0,002364 0,02601 0,06499
| pom
0,01
0,001 0,01 0,1 1 10
t [s]
E [mJ] E [mJ]
[K/W]
thJC
Z
**----- End of picture text -----**
5
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**----- Start of picture text -----**
技术信息�/�Technical�Information
IGBT-模块IGBT-modules FF200R12KE3
**----- End of picture text -----**
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**==> picture [370 x 175] intentionally omitted <==**
**----- Start of picture text -----**
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6
IGBT-模块 IGBT-modules
## FF200R12KE3
## **使用条件和条款**
使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。
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保留产品规格书的修改权
7
## Links
- [View this product on Novapart](https://novapart.co/products/FF200R12KE3HOSA1/igbt-module-dual-295-a-17-v-105-kw-125-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff200r12ke3hosa1/igbt-module-n-ch-1-2kv-295a/dp/2726122)
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