# IGBT Module, Dual [Half Bridge], 150 A, 1.75 V, 790 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726121/)

**URL**: https://novapart.co/products/FF150R12RT4HOSA1/igbt-module-dual-half-bridge-150-a-175-v-790-w-c
**SKU**: FF150R12RT4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €79.8100
**Stock**: 10+

## Description

Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 790W |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 150A |
| Power Dissipation Pd | 790W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 150A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726121/)

IGBT-模块 IGBT-modules 

## FF150R12RT4 

VCES = 1200V IC nom = 150A / ICRM = 300A 

- **典型应用** • 高频开关应用 • 电机传动 • UPS系统 

- 

- 

- 

**电气特性** 

- • 低开关损耗 

- CEsat 

- • T yop = • VCEsat 7 IF **机械特性** • 绝缘的基板 • 标封装 

- 

- 

- CEsat 

- • T yop = • VCEsat 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF150R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF150R12RT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>790<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 5,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,25<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,35<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>8,50<br>13,5<br>15,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,50<br>13,5<br>15,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,19<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,081<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF150R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|150|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|4100<br>4000|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||120<br>140<br>150||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||14,0<br>24,0<br>28,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||5,00<br>8,50<br>10,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,31|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,13||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-05 revision:�2.1 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## 技术信息�/�Technical�Information 

## FF150R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV|
|模块基板材料<br>Materialofmodulebaseplate|||Cu||||
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||17,0<br>20,0|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||17,0<br>9,5|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个模块/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,05||K/W|
|杂散电感,模块<br>Strayinductancemodule||LsCE||30||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'||0,65||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M6根据相应的应用手册进行安装<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00|-|5,00|Nm|
|端子联接扭距<br>Terminalconnectiontorque|螺丝M5根据相应的应用手册进行安装<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|重量<br>Weight||G||160||g|



Power Cycling Zuverlässigkeit bei Tvjop=125°C: 

- entspricht gültiger Spezifikation für Standard Module bei Tvjmax=125°C; 300.000 Zyklen @ dTj=50K Power Cycling Capability at Tvjop=125°C: 

- according to valid specification for standard modules at Tvjmax=125°C; 300.000 cycles @ dTj=50K 

date�of�publication:�2013-11-05 revision:�2.1 

prepared�by:�MK approved�by:�WR 

4 

IGBT-模块 IGBT-modules 

## FF150R12RT4 

## **初步数据** 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>240 Pe 240 VGE = 11V i7ceann<br>VGE = 9V<br>[E] [e]<br>210 210<br>Pt | py [ye]<br>eee /<br>180 180<br>[Ls eee eee eae<br>eae eee eee<br>150 150<br>120 120<br>ae eee ee eee Zee<br>90 eee 90 oan<br>ee eeee<br>60 60<br>ee ‘ ee ee ‘77<br>30 30<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 45 Eoff, Tvj = 125°C<br>EF Tvj = 150°C Lo PO Eon, Tvj = 150°C E<br>Eoff, Tvj = 150°C<br>240 40<br>a] BE P opo<br>210 35<br>aaa ae t f<br>180 30<br>150 25<br>pt it ll Lie<br>120 20<br>PPT eer<br>90 15<br>ee | ee LZ<br>60 10<br>“7 LE<br>30 5<br>ee ee ee<br>0 0<br>poet TTT | Pe<br>5 6 7 8 9 10 11 12 13 0 30 60 90 120 150 180 210 240 270 300<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF150R12RT4 

## **初步数据** 

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**----- Start of picture text -----**<br>
switchingFFRIRE IGBT,losses HAIGBT,Inverter( A) (typical) transientBeASTARAithermalIGBT, iimpedance 3535 IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =150A,V CE =600V<br>40 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>HH— EE HH} tH<br>36 Eoff, Tvj = 125°C ror e ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>32 fe ptt > f eea a PTaTT Te ae| T | |<br>28<br>ee tT Nita<br>24 Pf ft | foeaTF fd | 0,1 Pe Pet tt O FT|<br>BS ca a<br>20 wa 2a PCIEasSee<br>16<br>0,01<br>128 Pt fT } fo) tt pt dd 7PT eeeee ee e e<br>i:    1    2    3    4<br>4 PP PT TT T r τ ii[K/W]:   [s]:    0,0114   0,01    0,0627   0,02    T 0,0608   0,05    0,0551   0,1<br>ee PEI Ti l<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rin2SLF K IGBT, ass ( RBSOA ) LEG mE RB Fes ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =1.1 Ω ,T vj =150°C<br>400 300<br>IC, Modul Tvj = 25°C<br>IC, Chip 270 Tvj = 125°C<br>350 EJ] e Tvj = 150°C we<br>240<br>300<br>Po Pe o<br>210<br>250<br>180<br>200 150<br>120<br>150<br>90<br>100<br>60 HL<br>50 BERED<br>30<br>7 AREeE<br>[C] a [er]<br>0 0<br>pi [tT}] VA<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

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IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF150R12RT4 

## **初步数据** 

**==> picture [485 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = 180A, V CE = 600 V<br>14 Ss 14 SS |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>12 12<br>10 10<br>ERR) CREE<br>8 8<br>6 LeeLee 6<br>4 aA 4 PoP Ee<br>2 2<br>0 0<br>0 30 60 90 120 150 180 210 240 270 300 0 1 2 3 4 5 6 7 8 9 10 11<br>IF [A] RG [ Ω ]<br>mAh RE, 2<br>transient thermal impedance Diode, Inverter<br>ZthJC = f (t)<br>1<br>ZthJC : Diode<br>oo o<br>rT TT T T TT<br>Pt<br>He<br>0,1 ST a l<br>Ye ee<br>Pt<br>PT [Ta] eei<br>rT [TT] TTTTee<br>a<br>0,01<br>SST<br>ee<br>Poeee<br>rT TT TT TT<br>A (oi<br>i:    1    2    3    4<br>ri[K/W]:   0,0186   0,1023   0,0992   0,0899<br>PT τ i[s]:    0,01    0,02    T 0,05    0,1    f<br>ANE Fro m<br>0,001<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF150R12RT4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
prepared�by:�MK date�of�publication:�2013-11-05<br>approved�by:�WR revision:�2.1<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FF150R12RT4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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9 



## Links

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- [Supplier page](https://es.farnell.com/infineon/ff150r12rt4hosa1/igbt-module-n-ch-1-2kv-150a/dp/2726121)
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