# IGBT Module, Dual [Half Bridge], 1.5 kA, 1.75 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3582453/)

**URL**: https://novapart.co/products/FF1500R17IP5PBPSA1/igbt-module-dual-half-bridge-15-ka-175-v-c
**SKU**: FF1500R17IP5PBPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €826.0700
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 3+B |
| Igbt Technology | IGBT 5 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 1.5kA |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 1.5kA |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582453/)

FF1500R17IP5P 

VCES = 1700V IC nom = 1500A / ICRM = 3000A 

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Datasheet www.infineon.com 

2018-07-26 

FF1500R17IP5P 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 50°C, Tvj max= 175°C|ICDC|1500|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|3000|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 1500 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,75<br>2,10<br>2,30|2,20<br>2,65<br>2,90|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 54,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,35|5,80|6,25|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 900 V|QG||7,50||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||88,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||2,70||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,30<br>0,31<br>0,32||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,15<br>0,16<br>0,16||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,66<br>0,74<br>0,80||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= -15 / 15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,11<br>0,16<br>0,17||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 1500 A, VCE= 900 V, Lσ= 30 nH<br>di/dt = 8550 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||335<br>500<br>595||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 1500 A, VCE= 900 V, Lσ= 30 nH<br>du/dt = 2750 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||330<br>465<br>545||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||6000||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||29,2|K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1500|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3000|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|580<br>485|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 175°C|PRQM|1500|||kW|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,75<br>1,72<br>1,70|2,10<br>2,05<br>2,05|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1500 A, - diF/dt = 8550 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||1250<br>1450<br>1550||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1500 A, - diF/dt = 8550 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||325<br>550<br>700||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1500 A, - diF/dt = 8550 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||185<br>325<br>425||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||48,6|K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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FF1500R17IP5P 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||33,0<br>33,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||10||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,10<br>0,09||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||150|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1400||g|



Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07 

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4 

FF1500R17IP5P 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
3000 3000<br>2800 TTvjvj = 25°C = 125°C 2800 VVGEGE = 20V = 15V<br>Tvj = 175°C VGE = 12V<br>2600 2600 V GE  = 10V<br>VGE = 9V<br>2400 2400 V GE  = 8V<br>2200 2200<br>2000 2000<br>1800 1800<br>1600 1600<br>1400 1400<br>1200 1200<br>1000 1000<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.51� Ω ,�RGoff�=�0.82� Ω ,�VCE�=�900�V 

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3000 1800<br>2800 TTTvjvjvj = 25°C = 125°C = 175°C 1600 EE E onon off , T, T , T vjvj vj  = 125°C = 175°C  = 125 ° C<br>2600 Eoff, Tvj = 175°C<br>2400<br>1400<br>2200<br>2000 1200<br>1800<br>1000<br>1600<br>1400<br>800<br>1200<br>1000 600<br>800<br>400<br>600<br>400<br>200<br>200<br>0 0<br>5 6 7 8 9 10 11 12 0 500 1000 1500 2000 2500 3000<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =1500A,V CE =900V<br>2200 100<br>Eon, Tvj = 125°C ZthJH : IGBT<br>2000 EEonoff,, T Tvvjj = 175°C = 125°C<br>a Eoff, Tvj = 175°C Se<br>Sriiissotil<br>1800<br>| oii aii<br>1600 y, y PIETUM eT<br>pia<br>10<br>1400 OY Pttt et<br>1200<br>1000 - aaa ASeti arti eisai<br>800<br>1<br>600<br>/ ee<br>400<br>i: 1 2 3 4<br>ri[K/kW]: 1,55 12,6 11,6 3,41<br>200 τ i[s]: 0,0015 0,0416 0,255 1,82<br>a UT TT |<br>0 0,1 VT<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE ee sy, R Goff =082 Ω ,T vj =175°C<br>3600 3000<br>IICC, Modul, Chip 2800 TTvjvj = 25°C = 125°C<br>2600 Tvj = 175°C Ul<br>3000 ~ 2400<br>l 2200 |<br>2400 2000<br>1800<br>1600<br>1800<br>1400<br>1200<br>1200 1000<br>800 j/<br>600<br>600<br>400<br>200<br>0 0 P| ee ET |<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f il F) Erec =f(R G)<br>RGon =0.51 Ω ,V CE =900V IF =1500A,V CE =900V<br>600 500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 175°C Erec, Tvj = 175°C<br>450<br>a“a<br>500<br>400<br>350<br>400 “XN<br>~~<br> N<br>300<br>300 250<br>200<br>200<br>/ 150<br>/<br>/<br>100<br>100<br>50<br>0 0<br>0 500 1000 1500 2000 2500 3000 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


ZthJH =f (t) IR =f(V R) Tvj = 

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**----- Start of picture text -----**<br>
100 3300<br>ZthJH : Diode IR, Modul<br>ar S 3000 T<br>| | |<br>2700<br>PT eo<br> TATU FTI ee 2400 Pa eaeeee<br>2100<br>1800<br>10<br>1500<br>1200<br>900<br>600<br>i: 1 2 3 4<br>ri[K/kW]: 3,29 11 23,5 10,8<br>τ i[s]: 0,001 0,0208 0,0984 0,65 300<br>1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br> [K/kW]thJH  [A]IR<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
restricted area for Thermal Interface Material<br>232<br>36 [�] [0,2]  (2x) 8 [�] [0,1]  (8x) 18 [�] [0,2]  (4x)<br>250 [�] [1]<br>A<br>224<br>187 screwing depth<br>150 max. 16mm (8x)<br>recommended designheight lower side screwing depth 113<br>bus bar to baseplate max. 8mm (8x) 76<br>38,25 [�] [0,25] 24 58 M8 (8x) � � 0,8 A B C � 5,5 - 0,2 (14x) � � 0,5 A B C<br>7,5 + 0,5 6 8x 14x<br>max. 3<br>max. 2 26 [�] [0,25] B 14( � 5,5) M4 (8x) � 8x � 0,8 A B C ( � 5,5) C<br>25<br>recommended design 39<br>height lower side 64<br>PCB to baseplate 78<br>92<br>103<br>117<br>156<br>195<br>234<br>60<br>10 (6x)<br>0,3 73<br> � 0,5<br>23,6 89  �<br>37 39<br>0,3<br> �  (2x)  (2x)<br>3,8 (8x) 20,6 0,3  � 0,3  �<br>25,1 22,1<br> (8x)<br>0,3<br> �<br>11,8<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FF1500R17IP5PBPSA1/igbt-module-dual-half-bridge-15-ka-175-v-c)
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- [Supplier page](https://es.farnell.com/infineon/ff1500r17ip5pbpsa1/igbt-module-dual-n-ch-1-7kv-1/dp/3582453)
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