# IGBT Module, Dual, 1.5 kA, 1.75 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3582452/)

**URL**: https://novapart.co/products/FF1500R17IP5BPSA1/igbt-module-dual-15-ka-175-v-c
**SKU**: FF1500R17IP5BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €618.2500
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 3+B |
| Igbt Technology | IGBT 5 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 1.5kA |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 1.5kA |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582452/)

## FF1500R17IP5 

VCES = 1700V IC nom = 1500A / ICRM = 3000A 

- 潜在应用 • 大功率变流器 

- • 牵引变流器 • 电机传动 • 风力发电机 

• 

- 

- 

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## 电气特性 

- T vj op = 

- • 1K V CEsat 

- 低开关损耗 

- 

- 高电流密度 

- T vj op = 

- • Low V CEsat 

- 

- 

- 

## 机械特性 

- 

- 高功率密度 

- • 高功率循环和温度循环能力 

- • 高爬电距离和电气间隙 

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- 

- 

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**Digit** 

Datasheet www.infineon.com 

2017-09-19 

FF1500R17IP5 

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## IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values 

|集电极－发射极电压<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|1700||V|
|---|---|---|---|---|---|---|
|连续集电极直流电流<br>ContinuousDCcollectorcurrent|TC= 90°C, Tvj max= 175°C|IC nom|1500|||A|
|集电极重复峰值电流<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|3000|||A|
|栅极－发射极峰值电压<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|特征值/CharacteristicValues|||min.|typ.|max.||
|集电极－发射极饱和电压<br>Collector-emittersaturationvoltage|IC= 1500 A, VGE= 15 V<br>IC= 1500 A, VGE= 15 V<br>IC= 1500 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,75<br>2,10<br>2,30|2,20<br>2,65<br>2,90|V<br>V<br>V|
|栅极阈值电压<br>Gatethresholdvoltage|IC= 54,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,35|5,80|6,25|V|
|栅极电荷<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 900V|QG||7,50||µC|
|内部栅极电阻<br>Internalgateresistor|Tvj= 25°C|RGint||1,0||Ω|
|输入电容<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||88,0||nF|
|反向传输电容<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||2,70||nF|
|集电极-发射极截止电流<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|栅极-发射极漏电流<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,30<br>0,31<br>0,32||µs<br>µs<br>µs|
|上升时间(电感负载)<br>Risetime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,15<br>0,16<br>0,16||µs<br>µs<br>µs|
|关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,66<br>0,74<br>0,80||µs<br>µs<br>µs|
|下降时间(电感负载)<br>Falltime,inductiveload|IC= 1500 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,11<br>0,16<br>0,17||µs<br>µs<br>µs|
|开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse|IC= 1500 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 8550 A/µs (Tvj= 175°C)<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||335<br>500<br>595||mJ<br>mJ<br>mJ|
|关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse|IC= 1500 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2750 V/µs (Tvj= 175°C)<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||330<br>465<br>545||mJ<br>mJ<br>mJ|
|短路数据<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||6000||A|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个IGBT/perIGBT|RthJC|||19,0|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||15,5||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## FF1500R17IP5 

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## 二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|1500|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3000|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|580<br>485|||kA²s<br>kA²s|
|最大损耗功率<br>Maximumpowerdissipation|Tvj= 175°C|PRQM|1500|||kW|
|特征值/CharacteristicValues|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,75<br>1,70<br>1,70|2,10<br>2,05<br>2,05|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 1500 A, - diF/dt = 8550 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||1250<br>1450<br>1550||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 1500 A, - diF/dt = 8550 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||325<br>550<br>700||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 1500 A, - diF/dt = 8550 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||185<br>325<br>425||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||35,0|K/kW|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||18,5||K/kW|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
|负温度系数热敏电阻/NTC-Thermistor<br>特征值/CharacteristicValues|||min.|typ.|max.||
|额定电阻值<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



根据应用手册标定 Specification�according�to�the�valid�application�note. 

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## FF1500R17IP5 

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## 模块�/�Module 

|模块/Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|模块基板材料<br>Materialofmodulebaseplate|||Cu||||
|爬电距离<br>Creepagedistance|端子至散热器/terminaltoheatsink<br>端子至端子/terminaltoterminal||33,0<br>33,0<br>|||mm|
|电气间隙<br>Clearance|端子至散热器/terminaltoheatsink<br>端子至端子/terminaltoterminal||19,0<br>19,0<br>|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||10||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'<br>RAA'+CC'||0,10<br>0,09||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||150|°C|
|模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M5根据相应的应用手册进行安装<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|端子联接扭距<br>Terminalconnectiontorque|螺丝M4根据相应的应用手册进行安装<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>螺丝M8根据相应的应用手册进行安装<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|重量<br>Weight||G||1400||g|



Höchstzulässige Bodenplattenbetriebstemperatur   TBPmax = 150°C Maximum baseplate operation temperature             TBPmax = 150°C 

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输出特性�IGBT,�逆变器�（典型) **output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

输出特性�IGBT,�逆变器�（典型) **output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
3000 3000<br>2800 TTvjvj = 25°C = 125°C 2800 VVGEGE = 20V = 15V<br>Tvj = 175°C VGE = 12V<br>2600 2600 V GE  = 10V<br>VGE = 9V<br>2400 2400 V GE  = 8V<br>2200 2200<br>2000 2000<br>1800 1800<br>1600 1600<br>1400 1400<br>1200 1200<br>1000 1000<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


传输特性�IGBT,�逆变器�(典型) **transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
3000<br>2800 TTvjvj = 25°C = 125°C<br>Tvj = 175°C<br>2600<br>2400<br>2200<br>2000<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>5 6 7 8 9 10 11 12<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


开关损耗�IGBT,�逆变器�（典型) **switching�losses�IGBT,Inverter�(typical)** 

Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.51� Ω ,�RGoff�=�0.82� Ω ,�VCE�=�900�V 

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**----- Start of picture text -----**<br>
1800<br>Eon, Tvj = 125°C<br>1600 E E on off , T , T vj vj  = 175°C  = 125 ° C<br>Eoff, Tvj = 175°C<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 500 1000 1500 2000 2500 3000<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =1500A,V CE =900V<br>2200 100<br>Eon, Tvj = 125°C ZthJC : IGBT<br>2000 EEonoff,, T Tvvjj = 175°C = 125°C<br>a Eoff, Tvj = 175°C Se<br>1800<br>| Sati stati nih aii<br>y a a<br>1600<br>10<br>1400 “aLY eePeOTT<br>1200<br>1000 - aaa aSAAeee<br>800<br>1<br>600 HPAL za a a<br>/ PE A<br>400<br>i: 1 2 3 4<br>ri[K/kW]: 0,524 2,36 15 1,16<br>200 τ i[s]: 0,0009 0,012 0,0503 1,85<br>a |<br>0 0,1 PUTT VET PTT<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I reverse C CE bias )  safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE SVR Goff =0.82 Ω ,T vj =175°C a<br>3600 3000<br>IICC, Modul, Chip 2800 TTvjvj = 25°C = 125°C<br>2600 Tvj = 175°C Ul<br>3000<br>= : 2400 et]a<br>2200<br>2400 CELL 2000 FREER<br>1800<br>1600<br>1800<br>1400<br>1200<br>1200 1000<br>e/<br>800<br>600<br>600<br>400<br>200 fe<br>0 0 nae Zeaneeeee<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon b51 Ω ,V CE =900V IF = 1600 A, V CE = 900 V<br>600 500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 175°C Erec, Tvj = 175°C<br>450<br>500<br>400<br>350<br>400<br>300<br>300 250<br>200<br>200 / i NERS: tr<br>jo N<br>150<br>/<br>/<br>100<br>100<br>50<br>A<br>0 0<br>0 500 1000 1500 2000 2500 3000 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>IF [A] RG [ Ω ]<br>transientBANAthermalRS impedanceees Diode, Inverter safeREToperationK RESarea wweDiode,(SOA)Inverter (SOA)<br>ZthJC =f(t® IR =f(V R)<br>Tvj = Ty5%c<br>100 3300<br>ZthJC : Diode IR, Modul<br>Te 3000<br>2700<br>a a | \<br>CCN<br>2400<br>TN eo<br>2100<br>1800<br>10<br>1500<br>1200<br>900<br>600<br>i: 1 2 3 4<br>ri[K/kW]: 2,02 9,55 20,7 2,7<br>τ i[s]: 0,0009 0,0172 0,0659 1,44 300<br>1 eee 0 PPE EE<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


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## 负温度系数热敏电阻�温度特性 **NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## 接线图�/�Circuit�diagram 

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## 封装尺寸�/�Package�outlines 

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**----- Start of picture text -----**<br>
36 [�] [0,2]  (2x) 8 [�] [0,1]  (8x) 18 [�] [0,2]  (4x)<br>250 [�] [1]<br>A<br>224<br>187<br>recommended design height lower side 150<br>bus bar to baseplate 113<br>76<br>38,25 [�] [0,25] screwing depthmax. 8mm (8x) 24 58 M8 (8x) � � 0,8 A B C � 5,5 -0,2 (14x) � � 0,5 A B C<br>7,5 + 0,5 6 8x 14x<br>max. 3<br>screwing depth<br>max. 16mm (8x)<br>max. 2 26 [�] [0,25] B 14( � 5,5) M4 (8x) � 8x � 0,8 A B C ( � 5,5) C<br>recommended design height lower side 25<br>PCB to baseplate 39<br>64<br>78<br>92<br>103<br>117<br>156<br>195<br>234<br>10 (6x)<br>23,60,3  � 73 890,5  �<br>37 39<br>0,3  �  (2x)  (2x)<br>3,8 (8x) 20,6 0,3  � 0,3  �<br>25,1 22,1<br> (8x)<br>11,80,3  �<br>**----- End of picture text -----**<br>


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## 警告事项 

由于技术所需产品可能含有危险物质。如需了解该等物质的类型，请向离您最近的英飞凌科技办公室接洽。 除非由经英飞凌科技授权代表签署的书面文件中做出另行明确批准的情况外，英飞凌科技的产品不应当被用于任何一项一旦产品失效 或者产品使用的后果可被合理地预料到可能导致人身伤害的任何应用领域。 

## WARNINGS 



## Links

- [View this product on Novapart](https://novapart.co/products/FF1500R17IP5BPSA1/igbt-module-dual-15-ka-175-v-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ff1500r17ip5bpsa1/igbt-module-dual-n-ch-1-7kv-1/dp/3582452)
---

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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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