# IGBT Module, Dual, 1.5 kA, 1.7 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3582450/)

**URL**: https://novapart.co/products/FF1500R12IE5BPSA1/igbt-module-dual-15-ka-17-v-175-c
**SKU**: FF1500R12IE5BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €585.5200
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 3+B |
| Igbt Technology | IGBT 5 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Dc Collector Current | 1.5kA |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 1.5kA |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582450/)

FF1500R12IE5 

VCES = 1200V IC nom = 1500A / ICRM = 3000A 

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Datasheet www.infineon.com 

2017-10-05 

FF1500R12IE5 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 100°C, Tvj max= 175°C|IC nom|1500|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|3000|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 1500 A, VGE= 15 V<br>IC= 1500 A, VGE= 15 V<br>IC= 1500 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,70<br>2,00<br>2,15|2,15<br>2,45<br>2,60|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 41,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 600V|QG||7,15||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,6||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||82,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||3,25||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,26<br>0,28<br>0,28||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,16<br>0,17<br>0,18||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,51<br>0,56<br>0,59||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 1500 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,09<br>0,11<br>0,13||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 1500 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 7900 A/µs (Tvj= 175°C)<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||120<br>180<br>215||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 1500 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2750 V/µs (Tvj= 175°C)<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||155<br>195<br>220||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||5600||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||19,5|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||12,5||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1500|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3000|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|575<br>445|||kA²s<br>kA²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>IF= 1500 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,95<br>1,85<br>1,80|2,45<br>2,30<br>2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1500 A, - diF/dt = 7900 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||745<br>1000<br>1150||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1500 A, - diF/dt = 7900 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||175<br>300<br>365||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1500 A, - diF/dt = 7900 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||82,0<br>135<br>160||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||35,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||14,1||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||33,0<br>33,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||10||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,10<br>0,09||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1400||g|



Höchstzulässige Bodenplattenbetriebstemperatur   TBPmax = 150°C Maximum baseplate operation temperature             TBPmax = 150°C 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

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**----- Start of picture text -----**<br>
3000<br>Tvj = 25°C<br>Tvj = 125°C<br>2700 T vj  = 175°C<br>2400<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
3000<br>Tvj = 25°C<br>Tvj = 125°C<br>2700 T vj  = 175°C<br>2400<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
3000<br>VGE = 20V<br>VGE = 15V<br>2700 V GE  = 12V<br>VGE = 10V<br>VGE = 9V<br>2400 V GE  = 8V<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.82� Ω ,�RGoff�=�0.82� Ω ,�VCE�=�600�V 

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**----- Start of picture text -----**<br>
700<br>Eon, Tvj = 125°C<br>Eon, Tvj = 175°C<br>600 EEoff off , T, Tvj vj  = 125°C = 175°C<br>500<br>400<br>300<br>200<br>100<br>0<br>0 300 600 900 1200 1500 1800 2100 2400 2700 3000<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1500A,V CE =600V<br>1400 100<br>Eon, Tvj = 125°C ZthJC : IGBT<br>1300 E on , T vj  = 175°C<br>1200 EEoff off , T, Tvj vj  = 125°C = 175°C<br>= Wi fereesti etmcet ft oeetectil eee<br>1100 ES / noo<br>[TT fo<br>1000<br>10 zal<br>900 See eAa = PtICa a ee |<br>Po A<br>800 ne<br>700<br>600 - iA<br>500<br>1<br>400<br>ao eet ecteerie<br>300<br>200 i: 1 2 3 4<br>ri[K/kW]: 0,527 8,61 8,74 1,63<br>100 τ i[s]: 0,0012 0,0271 0,0739 0,967<br>0 SEES 0,1 UN TT VT<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **(RBSOA)** 

> VGE =f(Q G) ICC = 1500A, TA, T T vj = 25°C 

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**----- Start of picture text -----**<br>
IC =f(V CE) ICC = 1500A, TA, T T vj = 25°C<br>VGE =415V,R Goff =082 Ω ,T vj =175°C<br>3600 15<br>IC, Modul VCC =  600V<br>IC, Chip<br>12<br>3000 _/ 7<br>9<br>6<br>2400 pp<br>3<br>1800 0<br>-3<br>1200<br>-6<br>-9<br>600<br>-12<br>0 -15<br>0 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 6 7 8<br>VCE  [V] QG [µC]<br> [V]<br> [A]<br>IC VGE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IF =f(V F) Erec =fil F)<br>RGon =0.82 Ω ,V CE =600V<br>3000 240<br>2700 TT T vjvjvj = 25°C = 125°C  = 175°C iH t/ 220 E E rec rec , T , T vj vj  = 125°C  = 175 ° C “ “ a“<br>/] 200 7<br>2400 iH a<br>/!/ 180<br>// /<br>2100<br>/ 160 y<br>// 7<br>1800 ‘ 140 a4<br>1500 120<br>‘<br>1200 100 7<br>/ )<br>80 / f<br>900 /<br>/<br>60 7<br>/<br>600<br>40 y<br>/<br>300<br>20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 0 300 600 900 1200 1500 1800 2100 2400 2700 3000<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(R G) ZthJC =f (t)<br>IF =1500A,V CE =600V<br>180 100<br>Erec, Tvj = 125°C ZthJC : Diode<br>Erec, Tvj = 175°C<br>160<br>\\ a |||<br>140 : oo<br>\\ a > [oe] |<br>120 \ \<br>100 N<br>10<br>“N /;<br>80<br>60<br>40<br>i: 1 2 3 4<br>20 ri[K/kW]: 2,72 13,4 16,5 2,35<br>τ i[s]: 0,0012 0,0221 0,0782 1,53<br>0 1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
36 [�] [0,2]  (2x) 8 [�] [0,1]  (8x) 18 [�] [0,2]  (4x)<br>250 [�] [1]<br>A<br>224<br>187<br>recommended design height lower side 150<br>bus bar to baseplate 113<br>76<br>38,25 [�] [0,25] screwing depthmax. 8mm (8x) 24 58 M8 (8x) � � 0,8 A B C � 5,5 -0,2 (14x) � � 0,5 A B C<br>7,5 + 0,5 6 8x 14x<br>max. 3<br>screwing depth<br>max. 16mm (8x)<br>max. 2 26 [�] [0,25] B 14( � 5,5) M4 (8x) � 8x � 0,8 A B C ( � 5,5) C<br>recommended design height lower side 25<br>PCB to baseplate 39<br>64<br>78<br>92<br>103<br>117<br>156<br>195<br>234<br>10 (6x)<br>23,60,3  � 73 890,5  �<br>37 39<br>0,3  �  (2x)  (2x)<br>3,8 (8x) 20,6 0,3  � 0,3  �<br>25,1 22,1<br> (8x)<br>11,80,3  �<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FF1500R12IE5BPSA1/igbt-module-dual-15-ka-17-v-175-c)
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- [Supplier page](https://es.farnell.com/infineon/ff1500r12ie5bpsa1/igbt-module-dual-n-ch-1-2kv-1/dp/3582450)
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