# IGBT Module, Dual, 1.4 kA, 1.75 V, 7.65 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2776812/)

**URL**: https://novapart.co/products/FF1400R12IP4BOSA1/igbt-module-dual-14-ka-175-v-765-kw-150-c
**SKU**: FF1400R12IP4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €592.7000
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:1.4kA; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Tran

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 7.65kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 1.4kA |
| Power Dissipation Pd | 7.65kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 1.4kA |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776812/)

IGBT-Module IGBT-modules 

## FF1400R12IP4 

VCES = 1200V IC nom = 1400A / ICRM = 2800A 

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1 

> IGBT-ModuleIGBT-modules FF1400R12IP4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF1400R12IP4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AC<br>approvedby:MS<br>dateofpublication:2013-11-05<br>revision:2.4<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>1400<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>7,65<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1400 A, VGE= 15 V<br>IC= 1400 A, VGE= 15 V<br>IC= 1400 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,15<br>2,05<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 49,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>9,60<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>82,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>4,60<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,20<br>0,21<br>0,21<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,12<br>0,13<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,87<br>0,95<br>0,97<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1400 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,20<br>0,23<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1400 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 8600 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>65,0<br>80,0<br>95,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1400 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 2500 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>215<br>280<br>305<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>5600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>19,5 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>9,30<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FF1400R12IP4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1400|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2800|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|165<br>160<br>|kA²s<br>kA²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1400 A, VGE= 0 V<br>IF= 1400 A, VGE= 0 V<br>IF= 1400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,30|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1400 A, - diF/dt = 8600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||780<br>1000<br>1050||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1400 A, - diF/dt = 8600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||135<br>235<br>270||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1400 A, - diF/dt = 8600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||70,0<br>110<br>130||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||36,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||17,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4 

3 

IGBT-Module IGBT-modules 

## FF1400R12IP4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||3,00||K/kW|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|10<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,20||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1200||g|



4 

IGBT-Module IGBT-modules 

## FF1400R12IP4 

**==> picture [489 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC CE) IC CE)<br>VGE “AsV Tvj =150°C<br>2800 2800<br>2600 Tvj = 25°C 2600 VGE = 19V<br>Tvj = 125°C VGE = 17V<br>| ) | | Of fF es<br>2400 Tvj = 150°C 2400 VGE = 15V<br>ff fy E VGE = 13V ee<br>2200 es ee ee ee 2200 VVGEGE = 11V = 9V P| va tt<br>2000 e e 2000 a ie) eo<br>1800 1800<br>ee ee ee eee p o<br>1600 po 1600 ere<br>1400 ee [ee] ee 1400 eepo eyeeeeT<br>1200 ee ae 1200 po A|<br>1000 a ee eee ee 1000 po eT<br>800 ee ee 800 pe)<br>600 po 600 pp<br>400 400<br>ee eee ee Poey | |<br>pw]<br>200 poeee [Yt] 200 eee| | tT |<br>0 ee eee 0 AT Tt<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE eo VGE weVR Gon ot Ω ,R Goff =1 Ω ,V CE =600V<br>2800 800<br>2600 Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>2400 a Tvj = 150°C re 700 Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>2200 e e<br>600<br>2000 po} o e<br>i | 7<br>1800<br>500<br>1600 ee  Y eei 2 Z<br>iee 2<br>1400 400<br>1200<br>So Ce<br>300<br>1000<br>os oe<br>800<br>200<br>600<br>400 eeee eee 100 ee<br>200<br>S s<br>0 0<br>5 6 7 8 9 10 11 12 0 400 800 1200 1600 2000 2400 2800<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FF1400R12IP4 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =1400A,V CE =600V<br>1000 _—__ 100 aee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>900 [= Eon, Tvj = 150°C J o) LY WA HH—Re EEa HH} tH<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>800 =4} oo e e el el<br>700<br>10<br>ot t vA PTT TTT ETE P T<br>600 Pt tf ff ow]At} | CnCPE etecc o<br>500 Pt tf flUZ] } yd | PtSot<br>400 Pt | | Yt | | | dd 2AT EET EET<br>1<br>300 / rey VII<br>200 PP TY Ft ff dd | e eeeea TeeIN LUI|EI<br>i:    1    2    3    4<br>100 OeZL. I r τ ii[K/kW]:   [s]:    l 0,8   0,0008   4   0,013   13,2   0,05   1,5   0,6<br>0 ae ee ee 0,1<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE Aen V,R Goff =1 Ω ,T vj =150°C<br>3000 2800<br>2800 IC, Modul Tvj = 25°C<br>IC, Chip 2520 Tvj = 125°C<br>2600 fF ——- I Tvj = 150°C e<br>2400 2240<br>2200<br>i 1960 Poo | fe<br>2000<br>1800 1680<br>1600<br>1400<br>1400<br>1200 1120<br>1000<br>840<br>800<br>SSSSSsHs EL<br>600 560<br>a Ta | fl<br>400<br>280<br>200 a ee)<br>a<br>0 A 0 /A<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FF1400R12IP4 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (| F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = 1400 A, V CE = 600 V<br>200 180<br>Erec, Tvj = 125°C 170 Erec, Tvj = 125°C<br>180 e Erec, Tvj = 150°C T 160 e Erec, Tvj = 150°C ee<br>150<br>160 TT} I | | | | | ff<br>| | ee 140 =<br>e e 130<br>140<br>ee e e<br>; > 120 Poh. | fT ot ht hE<br>120 |eee 110<br>PT | seeTt<br>100<br>100 90<br>80<br>80 ey 70<br>a |) FE NBEEE FEE<br>60<br>60 iy) P ot | eesKET fT Tt<br>50<br>7 pot ft | SA yt<br>40<br>40<br>PA | | | | |) Pee eee<br>30<br>20 ee 20 |eee| [| | | [ | | [| “FY<br>10<br>0 ee 0 | | | | | {| | tT | ht<br>0 400 800 1200 1600 2000 2400 2800 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>100 100000<br>Fo ZthJC : Diode ee ee rn Rtyp a ee<br>Ee ae<br>PTee [TT] s TTTtiTTmeeaTd e a SS a e eee ee ee<br>te r a a ee ee ee<br>10 10000<br>a<br>Ee es<br>YY T TT ET ES NN se ee<br>ALTelTTT TTT aPNNe a eeee<br>| | ll 2 ee eee<br>1 1000<br>SAPETAI ItHCUM aPf [EN]<br>a a a<br>PT TTT ETT NS<br>| PT [TT] TTT TTT aa eeeeeeee<br>i:    1    2    3    4<br>ri[K/kW]:   3    8,5    23,8   0,7<br>PT TT τ i[s]:    0,0008   0,013    T 0,05   0,6    a<br>0,1 LM orm SC 100  dL<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/kW] R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FF1400R12IP4 

## **Schaltplan�/�circuit_diagram_headline** 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Gehäuseabmessungen�/�package�outlines** 

prepared�by:�AC date�of�publication:�2013-11-05 approved�by:�MS revision:�2.4 

8 

**==> picture [66 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF1400R12IP4 

## **Nutzungsbedingungen** 

## application. 

9 



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