# IGBT Module, Dual [Half Bridge], 1.2 kA, 1.75 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3582448/)

**URL**: https://novapart.co/products/FF1200R17IP5BPSA1/igbt-module-dual-half-bridge-12-ka-175-v-c
**SKU**: FF1200R17IP5BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €611.6400
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 2 |
| Igbt Technology | IGBT 5 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | - |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 1.2kA |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 1.2kA |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582448/)

FF1200R17IP5 

VCES = 1700V IC nom = 1200A / ICRM = 2400A 

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Datasheet www.infineon.com 

2017-09-13 

FF1200R17IP5 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1700|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 85°C, Tvj max= 175°C|IC nom|1200|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|2400|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>IC= 1200 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,75<br>2,15<br>2,35|2,30<br>2,75<br>3,00|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 43,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,35|5,80|6,25|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 900V|QG||6,00||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,2||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||68,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||2,10||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1700 V, VGE= 0 V, Tvj= 25°C|ICES|||5,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,27<br>0,28<br>0,29||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,15<br>0,17<br>0,17||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,64<br>0,71<br>0,76||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 1200 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,15<br>0,20<br>0,21||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 1200 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 6450 A/µs (Tvj= 175°C)<br>RGon= 0,56Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||265<br>400<br>485||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 1200 A, VCE= 900 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 2800 V/µs (Tvj= 175°C)<br>RGoff= 1,0Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||295<br>400<br>470||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||4200||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||24,3|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||19,6||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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FF1200R17IP5 

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## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|1700||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1200|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|340<br>275|||kA²s<br>kA²s|
|Spitzenverlustleistung<br>Maximumpowerdissipation|Tvj= 175°C|PRQM|1200|||kW|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>IF= 1200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,80<br>1,75<br>1,75|2,20<br>2,15<br>2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1200 A, - diF/dt = 6450 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||945<br>1100<br>1200||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1200 A, - diF/dt = 6450 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||230<br>410<br>540||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1200 A, - diF/dt = 6450 A/µs (Tvj=175°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||130<br>245<br>325||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||43,9|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||22,9||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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FF1200R17IP5 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||33,0<br>33,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||18||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||0,15<br>0,09||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||150|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||825||g|



Höchstzulässige Bodenplattenbetriebstemperatur TBPmax = 150°C Maximum baseplate operation temperature           TBPmax = 150°C 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

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**----- Start of picture text -----**<br>
2400<br>2200 T T vj vj  = 25°C  = 125 ° C<br>Tvj = 175°C<br>2000<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0,2 0,6 1,0 1,4 1,8 2,2 2,6 3,0 3,4 3,8<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
2400<br>VGE = 20V<br>2200 VGE = 15V<br>VGE = 12V<br>VGE = 10V<br>2000 VGE = 9V<br>VGE = 8V<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.56� Ω ,�RGoff�=�1� Ω ,�VCE�=�900�V 

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2400 1200<br>2200 T T vj vj  = 25°C  = 125 ° C 1100 E E on on , T , T vj vj  = 125°C  = 175 ° C<br>Tvj = 175°C Eoff, Tvj = 125°C<br>Eoff, Tvj = 175°C<br>2000 1000<br>1800 900<br>1600 800<br>1400 700<br>1200 600<br>1000 500<br>800 400<br>600 300<br>400 200<br>200 100<br>0 0<br>5 6 7 8 9 10 11 12 0 300 600 900 1200 1500 1800 2100 2400<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =1200A,V CE =900V<br>1500 100<br>1400 [ EE nn onon, T, Tvjvj = 125°C = 175°C ee pot ZthJC : IGBT TT<br>Eoff, Tvj = 125°C<br>1300 E off , T vj  = 175°C<br>1200<br>7 “ 7<br>1100<br>1000<br>900 |<br>800<br>10<br>700<br>600<br>500<br>400<br>300<br>200 i: 1 2 3 4<br>ri[K/kW]: 1,56 2,27 18,6 1,91<br>τ i[s]: 0,00058 0,0105 0,0488 0,648<br>100<br>0 1<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **(RBSOA)** 

> IF =f(V F) 

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IC =f(V CE)<br>VGE =415V,R Goff =1 Ω ,T vj =175°C<br>2500 2400<br>IC, Modul 2200 T T vj vj  = 25°C  = 125 ° C<br>IC, Chip Tvj = 175°C<br>2000<br>2000 ET TT Tf Ee |<br>1800<br>1600<br>1500<br>1400<br>1200<br>1000<br>1000 800 Pi y |<br>A<br>600<br>500<br>400<br>200<br>aeLY<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f il F) Erec =f(R G)<br>RGon =0.56 Ω ,V CE =900V IF =1200A,V CE =900V<br>400 500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 175°C Erec, Tvj = 175°C<br>450<br>350<br>400<br>300<br>350<br>250<br>300<br>200 250<br>200<br>150<br>/<br>/ 150<br>/<br>100 7<br>100<br>50<br>50<br>0 0<br>0 300 600 900 1200 1500 1800 2100 2400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


ZthJC =f (t) IR =f(V R) Tvj = 

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**----- Start of picture text -----**<br>
100<br>ZthJC : Diode<br>10<br>i: 1 2 3 4<br>ri[K/kW]: 3,09 10,7 26,2 3,84<br>τ i[s]: 0,000893 0,0176 0,0641 0,849<br>1<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/kW]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2700<br>IR, Modul<br>2400<br>2100<br>1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>VR [V]<br> [A]<br>IR<br>**----- End of picture text -----**<br>


Datasheet 

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## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
screwing depth<br>36  � 0,2 18  � 0,2 (2x) max. 16 (4x)<br>screwing depth<br>max. 8 (7x)<br>A 172  � 0,5<br>150<br>113<br>103<br>recommeded design height 92<br>lower side PCB to baseplate<br>76 + 0<br>�5,5<br>58 -0,1<br>25,9  � 0,25 8  � 0,1 (7x) � (10x) � 0,25 A B C<br>� 0,4 A<br>(7x)<br>1 MAX<br>M4<br>� � 0,6 A B C<br>(7X)<br>45,5  � 0,5<br>25<br>14<br>M8<br>� � 0,6 A B C<br>(4x)<br>37,7  � 0,25 �285,5  � 0,1 17  � 0,1 C<br>B<br>recommeded design height 39<br>lower side bus bar to baseplate 64<br>78<br>117<br>156<br>0,3<br> �<br>0,6 0,1<br>+ - 0  � 36,5<br>22 3<br>0,3<br>0,5  � 10 0,3<br> � 73 21  �<br>89 10 21,5<br>0,3<br> � 39<br>0,5<br>12,3 4,3 0,1  � �5,5<br> � 24,5<br>20<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FF1200R17IP5BPSA1/igbt-module-dual-half-bridge-12-ka-175-v-c)
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- [Supplier page](https://es.farnell.com/infineon/ff1200r17ip5bpsa1/igbt-module-dual-n-ch-1-7kv-1/dp/3582448)
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