# IGBT Module, Dual, 100 A, 1.75 V, 555 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726116/)

**URL**: https://novapart.co/products/FF100R12RT4HOSA1/igbt-module-dual-100-a-175-v-555-w-150-c
**SKU**: FF100R12RT4HOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €95.2700
**Stock**: 10+

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:555W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (23-Jan-2024) |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 555W |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 555W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726116/)

IGBT-模块 IGBT-modules 

## FF100R12RT4 

VCES = 1200V IC nom = 100A / ICRM = 200A 

## **典型应用** 

- 大功率变流器 

- 电机传动 

- • UPS系统 

- 

- 

- 

## **电气特性** 

- 

- 低开关损耗 

- CEsat 

- T 

- VCEsat 

- 

- 

- CEsat 

- • T 

- VCEsat 

## **机械特性** 

- 绝缘的基板 

- • 标封装 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FF100R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FF100R12RT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>555<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 2800 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>6,50<br>9,50<br>10,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>6,00<br>9,00<br>10,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,27<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,078<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FF100R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1900<br>1800|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||100<br>105<br>110||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||10,0<br>17,0<br>19,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,00<br>7,00||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,48|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,14||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



date�of�publication:�2013-11-05 revision:�2.1 

prepared�by:�MK approved�by:�WR 

3 

IGBT-模块 IGBT-modules 

## 技术信息�/�Technical�Information 

## FF100R12RT4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0|||kV|
|模块基板材料<br>Materialofmodulebaseplate|||Cu||||
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||17,0<br>20,0|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||17,0<br>9,5|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个模块/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,05||K/W|
|杂散电感,模块<br>Strayinductancemodule||LsCE||30||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'||0,65||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M6根据相应的应用手册进行安装<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,00|-|5,00|Nm|
|端子联接扭距<br>Terminalconnectiontorque|螺丝M5根据相应的应用手册进行安装<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|2,5|-|5,0|Nm|
|重量<br>Weight||G||160||g|



Power Cycling Zuverlässigkeit bei Tvjop=125°C: 

- entspricht gültiger Spezifikation für Standard Module bei Tvjmax=125°C; 300.000 Zyklen @ dTj=50K Power Cycling Capability at Tvjop=125°C: 

- according to valid specification for standard modules at Tvjmax=125°C; 300.000 cycles @ dTj=50K 

date�of�publication:�2013-11-05 revision:�2.1 

prepared�by:�MK approved�by:�WR 

4 

IGBT-模块 IGBT-modules 

## FF100R12RT4 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | y v 200 es<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 F VGE = 17V oR<br>E Tvj = 150°C OL) VGE = 15V |<br>VGE = 13V<br>160 Pe 160 VGE = 11V i7ceann<br>VGE = 9V<br>[E] [e]<br>140 140<br>Pt | py [ye]<br>eee /<br>120 120<br>[gs eee eee eae<br>eae eee eee<br>100 100<br>80 80<br>ae eee ee eee Zee<br>60 60<br>pf| ee ee Mi |<br>40 40<br>ee / ee ee ‘77<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStE IGBT, HaSeS (FRA) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 30<br>| ra SS<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C 27 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>160 fFLeJ eree 24 F Eoff, Tvj TS  = 150°C o | l<br>|<br>140 SR R 21<br>PEPE AA)Ane ee Cecee<br>120 18<br>/ en a<br>100 /|i 15 a Pea °<br>See. eee eee<br>80 12<br>BRD ARR eee Za<br>60 9<br>Se eeeeee<br>40 6<br>20 PP iiAne 3 aeaa<br>poet<br>0 0<br>TT T y<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FF100R12RT4 

## **初步数据** 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =100A,V CE =600V<br>30 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>27 a Eoff, Tvj = 125°C TT) of ol te 1 Htee a  co ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>2421 el Pf a | | eeeLethe maTY |e aTiti aTTeee| ll|<br>= T aT<br>7 ME n iin<br>18<br>ZO |<br>15 a 0,1 SE ALTH<br>129 PPoy|| ftAt| f tt|J |ft rT TTYaPTa A TTTTee<br>6 P| | f ff | ft | PEa aETTa Il<br>i:    1    2    3    4<br>3 en PPA) (LMI r τ ii[K/W]:   [s]:    0,0162   0,01    VI 0,0891   0,02    0,0864   0,05    0,0783   0,1    F<br>0 P| | tt fT tt 0,01 AN a) pot<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC CE) IF F)<br>VGE “i sV.R Goff =1.6 Ω ,T vj =150°C a<br>250 200<br>IC, Modul Tvj = 25°C<br>225 IC, Chip 180 Tvj = 125°C<br>Tvj = 150°C<br>ET) PF<br>200 160<br>SSSR EePe pe<br>175 140<br>150 120<br>125 100<br>100 80<br>75 60<br>50 ee ee 40 £L<br>ee<br>25 ee 20 VA<br>PP<br>0 CE 0 ee<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FF100R12RT4 

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**----- Start of picture text -----**<br>
初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = 100A, V CE = 600 V<br>12 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>10<br>ET) |} fl 8 a<br>7<br>8<br>6<br>6 CT) aere 5 PPE PT TT<br>4<br>4 Baeza et | ee<br>3<br>2<br>2<br>1<br>0 0<br>0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC = f (t)<br>1<br>Le<br>ZthJC : Diode<br>H— ccc<br>a Foo<br>|||<br>ce<br>a ey<br>FZ TTT<br>0,1<br>P| TT<br>PT TATET<br>a<br>A<br>TETTIE<br>P [VU] | |<br>PATA CCI i:    1    2    3    4<br>ri[K/W]:   0,0288   0,1584   0,1536   0,1392<br>τ i[s]:    0,01    0,02    0,05    0,1<br>PN eel THMELUTEC o<br>0,01 TT<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FF100R12RT4<br>初步数据<br>Preliminary�Data<br>接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
prepared�by:�MK date�of�publication:�2013-11-05<br>approved�by:�WR revision:�2.1<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FF100R12RT4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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9 



## Links

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