# IGBT Module, Dual, 1.39 kA, 2 V, 6.25 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726114/)

**URL**: https://novapart.co/products/FF1000R17IE4BOSA1/igbt-module-dual-139-ka-2-v-625-kw-150-c
**SKU**: FF1000R17IE4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €723.0300
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:1.39kA; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:6.25kW; Collector Emitter Voltage V(br)ceo:1.7kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | PrimePACK 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 6.25kW |
| Igbt Configuration | Dual |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 1.39kA |
| Power Dissipation Pd | 6.25kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 1.39kA |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726114/)

IGBT-Module IGBT-modules 

## FF1000R17IE4 

VCES = 1700V IC nom = 1000A / ICRM = 2000A 

- 3-Level-Applikationen 

- • Hilfsumrichter • Hochleistungsumrichter • Motorantriebe • Windgeneratoren 

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1 

> IGBT-ModuleIGBT-modules FF1000R17IE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

**Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FF1000R17IE4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:TA<br>approvedby:PL<br>dateofpublication:2013-11-05<br>revision:3.2<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>1000<br>1390<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>2000<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>6,25<br>kW<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 1000 A, VGE= 15 V<br>IC= 1000 A, VGE= 15 V<br>IC= 1000 A, VGE= 15 V<br>VCE sat<br>2,00<br>2,35<br>2,45<br>2,45<br>2,80<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 36,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>10,0<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>81,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>2,60<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,2Ω<br>td on<br>0,55<br>0,60<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 1,2Ω<br>tr<br>0,10<br>0,12<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>td off<br>1,00<br>1,25<br>1,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 1000 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 1,8Ω<br>tf<br>0,29<br>0,50<br>0,59<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 1000 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 8000 A/µs (Tvj= 150°C)<br>RGon= 1,2Ω<br>Eon<br>265<br>390<br>415<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 1000 A, VCE= 900 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 1,8Ω<br>Eoff<br>200<br>295<br>330<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>4000<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>24,0 K/kW<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>9,00<br>K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FF1000R17IE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|1000|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|2000|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|140<br>|kA²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 1000 A, VGE= 0 V<br>IF= 1000 A, VGE= 0 V<br>IF= 1000 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,85<br>1,95<br>1,95|2,25<br>2,35|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||1050<br>1200<br>1250||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||245<br>410<br>480||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 1000 A, - diF/dt = 8000 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||115<br>205<br>245||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||48,0|K/kW|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||18,0||K/kW|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�TA date�of�publication:�2013-11-05 approved�by:�PL revision:�3.2 

3 

IGBT-Module IGBT-modules 

## FF1000R17IE4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||33,0<br>33,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||19,0<br>19,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 400|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||3,00||K/kW|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|10<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,20||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>150<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M4<br>- Montage gem. gultiger Applikationsschrift<br>Screw M4<br>- Mounting according to valid application note<br>Schraube M8<br>- Montage gem. giltiger Applikationsschrift<br>Screw M8<br>- Mounting according to valid application note|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm|
|Gewicht<br>Weight||G||1200||g|



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## IGBT-Module IGBT-modules 

## FF1000R17IE4 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>2000 2000<br>Tvj = 25°C VGE = 20V<br>1800 Tvj = 125°C Po 1800 VGE = 15V<br>Tvj = 150°C AE ey | VGE = 12V Lo<br>VGE = 10V<br>1600 ee 1600 | VGE = 9V ii<br>Af | |<br>VGE = 8V<br>i<br>1400 1400<br>/ “ / / “<br>1200 See 1200<br>1000 1000<br>pi | |eae Eee<br>800 800<br>600 ee ee 600<br>ee ee 2<br>400 400<br>200 200<br>ee LGA<br>0 0<br>po | La<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =1.2 Ω ,R Goff =18 Ω ,V CE =900V<br>2000 Ld 1100 SS TS | fy<br>Tvj = 25°C Eon, Tvj = 150°C<br>1800 F Tvj = 125°C L 1000 Eon, Tvj = 125°C<br>Tvj = 150°C Eoff, Tvj = 150°C<br>eS fe 900 OE Eoff, Tvj = 125°C LEE<br>1600<br>Tse) | ttt<br>800<br>1400 rT fy | dfU7] UL EYA<br>700<br>e e a<br>1200<br>600<br>1000<br>500<br>++} cae eee<br>800 | | ihe2<br>pf  A peERR Zee e<br>400<br>Se ) Za<br>600<br>Se 300 eeeLAA ae<br>400 f LgeZo<br>200<br>eet<br>200 100 LE<br>0 0<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200 1400 1600 1800 2000<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## FF1000R17IE4 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =1000A,V CE =900V<br>1200 100<br>C Eon, Tvj = 150°C e] paa i Sooo ZthJC : IGBT eee<br>1100 Eon, Tvj = 125°C 4<— HH— E E HH} tH<br>Eoff, Tvj = 150°C<br>1000900 | | Eoff, Tvj = 125°C |WaaZLee] erPe a PT ET ie ell<br> ot it ter t<br>800 eee Zee 10 a ae<br>a 2eee<br>700600 P|P| || AtLAR]A ffttf]tf] PTPF | CaTA  EH ——F—EEHHih—— -H HH1<br>y 200 ||<br>500<br>400 1<br>a eee<br>a<br>300 ae eee PtCe  ttee ee ee eee<br>200 P| fo fof ff ff] Pea iie<br>i:    1    2    3    4<br>ri[K/kW]:   0,8    3,7    17    2,5<br>100 τ i[s]:    0,0008   0,013   0,05   0,6<br>0 0,1<br>0 1 2 3 4 5 6 7 8 9 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.8 Ω ,T vj =150°C<br>2200 a 2000 a | i<br>IC, Modul Tvj = 25°C<br>2000 FeL I C , Chip TT 1800 Tvj = 125°C<br>Tvj = 150°C<br>Ppl] it ) | J | | fe<br>1800 = | | tt tel 1600 hf e:<br>1600<br>ee<br>1400<br>1400 t/<br>Set 1200 p y[<br>SO /<br>1200<br>ee<br>1000<br>1000<br>800<br>800<br>600<br>600<br>400 Ht 400 P| Ty | |<br>200 200<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FF1000R17IE4 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ep Ω ,V CE =900V IF = 000A, V CE = 900 V<br>350 Se | 350 |<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>300 300<br>EJ ti} |} Edy<br>250 250<br>Ee eee] EE E<br>200 200<br>eer LINGLE EEE<br>150 LfJeri ity 150 ESSA]NAL<br>aE EL eee|<br>100 100<br>50 50<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1 2 3 4 5 6 7 8 9<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJC =f(t0 IR =f(V R)<br>Tvj = (50°C<br>100 Ls ZthJC : Diode 2400 Pt tT<br>HOT T o t oo eon fI IR, Modul E L ELE ELLE LLL<br>| PTI PE e T 2000 TTTP TNTooTT TTT<br>a ee || ;<br>1600<br>IE EET LEATEEE<br>| PLEIN EEE<br>10 1200<br>rTee| Veo rr TTT TTT INSTTN  TT<br>7Cttt 800 Py YT ELL ET ~<br>PAL ANE<br>PTI TIME FTEETI TIETETETT) TTT TTT PA=<br>400<br>i:    1    2    3    4<br>ri[K/kW]:   3    11,5    30    3,5<br>τ i[s]:    0,0008   0,013   0,05   0,6<br>1 CL bo l 0 PLL ET EEE<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJC  [A]IR<br>Z<br>**----- End of picture text -----**<br>


7 

IGBT-Module IGBT-modules 

## FF1000R17IE4 

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100000<br>Rtyp<br>H— = (| —<br>Ras ce<br>e e<br>a ee<br>a e e<br>10000 i<br>nt ee ee<br>ERaee ee ee ee<br>aPENeNe eses e s es esseees<br>pp NENf<br>1000 ERNE<br>—————<br>poNN<br>sees<br>PN<br>a ee eee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


8 

Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FF1000R17IE4 

**==> picture [86 x 38] intentionally omitted <==**

## **Schaltplan�/�circuit_diagram_headline** 

## **Gehäuseabmessungen�/�package�outlines** 

prepared�by:�TA approved�by:�PL 

date�of�publication:�2013-11-05 revision:�3.2 

9 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FF1000R17IE4 

## **Nutzungsbedingungen** 

application. 

10 



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- [Supplier page](https://es.farnell.com/infineon/ff1000r17ie4bosa1/igbt-module-n-ch-1-7kv-1-39ka/dp/2726114)
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