# Power MOSFET, P Channel, 20 V, 3 A, 0.067 ohm, WL-CSP, Surface Mount

![Product image](https://novapart.co/image/farnell:1324819/)

**URL**: https://novapart.co/products/FDZ191P/power-mosfet-p-channel-20-v-3-a-0067-ohm-wl-csp
**SKU**: FDZ191P
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2320
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Power Dissipation | 1.9W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.9W |
| Rds(On) Test Voltage | 4.5V |
| On Resistance Rds(On) | 0.067ohm |
| Transistor Case Style | WL-CSP |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.067ohm |
| Gate Source Threshold Voltage Max | 600mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1324819/)

## **Is Now Part of** 

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## **FDZ191P P-Channel 1.5V  PowerTrench[®] WL-CSP MOSFET** 

**-20V, -1A, 85m Features** 

## **General Description** 

Max rDS(on) = 85m at VGS = -4.5V, ID = -1A Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1A FDZ191P minimizes both PCB space and rDS(on). This advanced Max rDS(on) = 200m at VGS = -1.5V, ID = -1A WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent Occupies only 1.5 mm[2] of PCB area Less than 50% of the thermal transfer characteristics, ultra-low profile packaging, low area of 2 x 2 BGA gate charge, and low rDS(on). 

Ultra-thin package:  less than 0.65 mm height when mounted to PCB **Application** RoHS Compliant 

Battery management Load switch Battery protection 

|**D**|**PIN 1**<br>**S**<br>**S**<br>**D**<br>**S**<br>**G**<br>**PIN 1**<br>,<br>—_|~<|||**G**|||**S**|**S**||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**BOTTOM**<br>**TOP**|||||||**D**|||||
|**MOSFET Maximum Ratings  **TA= 25°C unless otherwise noted|||||||||||||
|**Symbol**|**Parameter**|||||**Ratings**||||||**Units**|
|VDS|Drain to Source Voltage||||||-20|||||V|
|VGS|Gate to Source Voltage|||||||±8||||V|
|ID|Drain Current    -Continuous|Drain Current    -Continuous|Drain Current    -Continuous(Note 1a)|||||-3||||A|
||-Pulsed||||||-15||||||
|PD|Power Dissipation<br>Power Dissipation|Power Dissipation<br>Power Dissipation|Power Dissipation(Note 1a)<br>Power Dissipation(Note 1b)||||1.9<br>0.9|||||W|
|TJ, TSTG|Operatingand Storage Junction Temperature Range|||||-55 to +150|-55 to +150|||||°C|
|**Thermal Characteristics**|||||||||||||
|R JA|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient(Note 1a)|||||65||||°C/W|
|R JA|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient|Thermal Resistance, Junction to Ambient(Note 1b)||||133||||||
|**Package Marking and Ordering Information**|||||||||||||
|**Device Marking**<br>**Device**<br>**Package**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>1<br>FDZ191P<br>WL-CSP<br>7’’<br>8mm<br>5000 units<br>~~ee~~<br>~~ee~~|||||||||||||



**1** 

©2009 Fairchild Semiconductor Corporation FDZ191P Rev.F5 (W) 

www.fairchildsemi.com 

|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250 A, VGS= 0V<br>-20<br>V<br>BVDSS<br>TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250 A, referenced to 25°C<br>-12<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -16V,  VGS= 0V<br>-1<br>A<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250 A<br>-0.4<br>-0.6<br>-1.5<br>V<br>VGS(th)<br>TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250 A, referenced to 25°C<br>2<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= -4.5V,  ID= -1A<br>67<br>85<br>m<br>VGS= -2.5V,   ID= -1A<br>85<br>123<br>VGS= -1.5V,   ID= -1A<br>140<br>200<br>VGS= -4.5V,  ID= -1A TJ= 125°C<br>87<br>123<br>ID(on)<br>On to State Drain Current<br>VGS= -4.5V,  VDS= -5V<br>-10<br>A<br>gFS<br>Forward Transconductance<br>VDS= -5V,  ID= -1A<br>7<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= -10V, VGS= 0V,<br>f = 1MHz<br>800<br>pF<br>Coss<br>Output Capacitance<br>155<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>9<br>**Switching Characteristics**<br>~~re~~<br>~~esDDGQ~~<br>~~Ae Ee~~<br>~~a GQ~~<br>~~**Q**O~~<br>~~G"~~<br>~~Re~~<br>~~rsGf~~<br>~~e~~<br>~~es“QO~~<br>~~QO~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~es~~<br>~~er~~<br>~~es~~<br>~~es~~<br>~~(QQ~~<br>~~RsDa~~<br>~~QQ~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~**ee** ~~~~**ee**ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|**Electrical Characteristics**TJ= 25°C unless otherwise noted<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= -250 A, VGS= 0V<br>-20<br>V<br>BVDSS<br>TJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= -250 A, referenced to 25°C<br>-12<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= -16V,  VGS= 0V<br>-1<br>A<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8V, VDS= 0V<br>±100<br>nA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= -250 A<br>-0.4<br>-0.6<br>-1.5<br>V<br>VGS(th)<br>TJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= -250 A, referenced to 25°C<br>2<br>mV/°C<br>rDS(on)<br>Drain to Source On Resistance<br>VGS= -4.5V,  ID= -1A<br>67<br>85<br>m<br>VGS= -2.5V,   ID= -1A<br>85<br>123<br>VGS= -1.5V,   ID= -1A<br>140<br>200<br>VGS= -4.5V,  ID= -1A TJ= 125°C<br>87<br>123<br>ID(on)<br>On to State Drain Current<br>VGS= -4.5V,  VDS= -5V<br>-10<br>A<br>gFS<br>Forward Transconductance<br>VDS= -5V,  ID= -1A<br>7<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= -10V, VGS= 0V,<br>f = 1MHz<br>800<br>pF<br>Coss<br>Output Capacitance<br>155<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>90<br>pF<br>Rg<br>Gate Resistance<br>f = 1MHz<br>9<br>**Switching Characteristics**<br>~~re~~<br>~~esDDGQ~~<br>~~Ae Ee~~<br>~~a GQ~~<br>~~**Q**O~~<br>~~G"~~<br>~~Re~~<br>~~rsGf~~<br>~~e~~<br>~~es“QO~~<br>~~QO~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~es~~<br>~~er~~<br>~~es~~<br>~~es~~<br>~~(QQ~~<br>~~RsDa~~<br>~~QQ~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~**ee** ~~~~**ee**ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|---|---|
|td(on)<br>Turn-On DelayTime<br>VDD= -10V, ID= -1A<br>VGS= -4.5V, RGEN= 6<br>11<br>20<br>ns<br>tr<br>Rise Time<br>10<br>20<br>ns<br>td(off)<br>Turn-Off DelayTime<br>50<br>80<br>ns<br>tf<br>Fall Time<br>30<br>48<br>ns<br>Qg(TOT)<br>Total Gate Charge at 10V<br>VGS= 0V to 10V VDD= -10V<br>ID= -1A<br>9<br>13<br>nC<br>Qgs<br>Gate to Source Gate Charge<br>1<br>nC<br>Qgd<br>Gate to Drain “Miller” Charge<br>2<br>nC<br>~~a~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>o<br>~~a~~<br>~~ee ee ee~~<br>~~ee~~<br>~~eeee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~ae~~<br>~~**ee**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|**Drain-Source Diode Characteristics**||
|IS<br>Maximum continuous Drain-Source Diode Forward Current<br>-1.1<br>A<br>VSD<br>Source to Drain Diode  Forward Voltage<br>VGS = 0V, IS = -1.1A(Note 2)<br>-0.7<br>-1.2<br>V<br>trr<br>Reverse RecoveryTime<br>IF= -1A, di/dt = 100A/ s<br>21<br>ns<br>Qrr<br>Reverse RecoveryCharge<br>5<br>nC<br>~~ReQO~~<br>~~esa~~<br>~~a~~<br>~~ee~~<br>~~eeee~~||
|**Notes:**||
|**1:** R JAis determined with the device mounted on a 1in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board<br>6|x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board|
|side of the solder ball, R JBis defined for reference. For R JCthe thermal reference point for the case is defined as the top surface of the copper chip carrier. R JCand R JB<br>~~6~~<br>~~6~~<br>~~6~~<br>~~6~~|~~6~~<br>~~6~~<br>~~6~~|
|are guaranteed by design while R JAis determined by the user's board design.<br>~~6~~||



a. 65°C/W when mounted  on b. 133°C/W when mounted on  a a 1 in[2 ] pad of 2 oz  copper,1.5” minimum pad of 2 oz copper X 1.5” X 0.062” thick PCB 

- **2:** Pulse Test: Pulse Width < 300 Hl s, Duty cycle < 2.0%. 

www.fairchildsemi.com 

**2** 

FDZ191P Rev.F5 (W) 

## **Typical Characteristics** TJ = 25°C unless otherwise noted 

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16 2.0<br>14 PULSE DURATION = 300 � s<br>1.8 VGS = -1.5V DUTY CYCLE = 2.0%MAX<br>1210 VGS = -4.5V VGS =  -2.0V 1.6 VGS = -2.0V VGS =  -2.5V<br>8 VGS = -3.5V 1.4<br>VGS = -2.5V<br>6 VGS =  -3.5V<br>1.2<br>4 VGS = -1.5V<br>2 PULSE DURATION = 300DUTY CYCLE = 2.0%MAX � s 1.0 VGS = -4.5V<br>0 0.8<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16<br>-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)<br>Figure 1.  On Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.5 240<br> ID = -1A ID = - 0.5A PULSE DURATION = 300 � s<br>1.4 VGS = -4.5V DUTY CYCLE = 2.0%MAX<br>200<br>1.3<br>1.2<br>160<br>1.1<br>1.0 120 TJ = 125 [o] C<br>0.9<br>80<br>0.8 TJ = 25 [o] C<br>0.7 40<br>-50 -25 0 25 50 75 100 125 150 1 2 3 4 5<br>TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On  Resistance                                         Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>15 60<br>PULSE DURATION = 300DUTY CYCLE = 2.0%MAX � s 10 VGS = 0V<br>12<br>VDD = -5V 1<br>9 TJ = 125 [o] C<br>0.1<br>TJ = 25 [o] C<br>6<br>TJ = 125 [o] C 0.01<br>3 TJ = 25 [o] C 1E-3 TJ = -55 [o] C<br>TJ = -55 [o] C<br>0 1E-4<br>0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>, DRAIN CURRENT (A)<br>D<br>-I<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>�<br>m<br>(<br>, DRAIN TO<br>NORMALIZED<br>rDS(on)<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


FDZ191P Rev.F5 (W) 

www.fairchildsemi.com 

**3** 

**Typical Characteristics** TJ = 25°C unless otherwise noted 

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5<br>2000<br>ID = -1A<br>4 1000<br>VDD = -5V<br>Ciss<br>3 VDD = -10V<br>2 VDD = -15V<br>Coss<br>1 100 f = 1MHz<br>VGS = 0V Crss<br>0 50<br>0 2 4 6 8 10 12 0.1 1 10 20<br>Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance vs Drain<br>to Source Voltage<br>4.0 30<br>3.5 10<br>VGS = -4.5V<br>3.0 100us<br>2.5 1ms<br>1<br>2.0 OPERATION IN THIS  10ms<br>VGS = - 2.5V AREA MAY BE<br>1.5 LIMITED BY r 100ms<br>DS(on)<br>1.0 0.1 SINGLE PULSETJ = MAX RATED 1s10s<br>0.5 R � JA = 65oC/W TRA � JA = 25 = 133 [O] C oC/W DC<br>0.0 0.01<br>25 50 75 100 125 150 0.1 1 10 80<br>TA, CASE TEMPERATURE (oC) -VDS, DRAIN to SOURCE VOLTAGE (V)<br>Figure 9.  Maximum Continuous Drain                              Figure 10.  Forward Bias Safe<br>Current  vs Ambient Temperature Operating Area<br>50<br>VGS = -10V<br>FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>10 CURRENT AS FOLLOWS:<br>I = I25  150 ---------------------- 125 – TA -<br>TA = 25 [o] C<br>1 SINGLE PULSE<br>0.5<br>10-3 10-2 10-1 100 101 102 103<br>t, PULSE WIDTH (s)<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>-V<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>-I  -I<br>, PEAK TRANSIENT POWER (W)P)(PK<br>**----- End of picture text -----**<br>


**Figure 11.   Single  Pulse Maximum  Power  Dissipation** 

FDZ191P Rev.F5 (W) 

www.fairchildsemi.com 

**4** 

**Typical Characteristics** TJ = 25°C unless otherwise noted 

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2<br>1<br>DUTY CYCLE-DESCENDING ORDER<br>D = 0.5<br>      0.2<br>      0.1<br>      0.05 PDM<br>      0.02<br>0.1       0.01<br>t1<br>t2<br>SINGLE PULSE NOTES:<br>DUTY FACTOR: D = t1/t2<br>PEAK TJ = PDM x Z �JA  x R �JA  + TA<br>0.01<br>10-3 10-2 10-1 100 101 102 103<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 12.  Transient Thermal Response Curve<br>IMPEDANCE, ZJA �<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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FDZ191P Rev.F5 (W)<br>**----- End of picture text -----**<br>


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5<br>**----- End of picture text -----**<br>


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www.fairchildsemi.com<br>**----- End of picture text -----**<br>


## **Dimensional Outline and Pad Layout** 

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**----- Start of picture text -----**<br>
Pin Definations:<br>Gate Drain Source<br>A1 C1, C2 A2, B1, B2<br>**----- End of picture text -----**<br>


_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAU-006_ 

www.fairchildsemi.com 

**6** 

FDZ191P Rev.F5 (W) 

## ~~—~~ 

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|---|---|---|---|



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.  Counterfeiting of semiconductor parts is a growing problem in t. he industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

**Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|in anymanner without notice.<br>r product development. Specifications may change<br>Datasheet contains the design specifications fo|
|Preliminary|First Production|at anytime without notice to improve design.<br>Semiconductor reserves the right to make changes<br>ta will be published at a later date. Fairchild<br>Datasheet contains preliminary data; supplementary da|
|No Identification Needed|Full Production|ice to improve the design.<br>changes at anytime without not<br>ications. Fairchild Semiconductor reserves the right to make<br>Datasheet contains final specif|
|Obsolete|Not In Production|ference information only.<br>The datasheet is for re<br>airchild Semiconductor.<br>that is discontinued by F<br>Datasheet contains specifications on a product|



Rev. I73 

FDZ191P Rev.F5 (W) 

www.fairchildsemi.com 

**7** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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**1** 



## Links

- [View this product on Novapart](https://novapart.co/products/FDZ191P/power-mosfet-p-channel-20-v-3-a-0067-ohm-wl-csp)
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- [Supplier page](https://es.farnell.com/en-ES/on-semiconductor/fdz191p/mosfet-p-ucpbf/dp/1324819)
---

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