# Power MOSFET, P Channel, 40 V, 65 A, 0.008 ohm, DFN, Surface Mount
**URL**: https://novapart.co/products/FDWS9509L-F085/power-mosfet-p-channel-40-v-65-a-0008-ohm-dfn
**SKU**: FDWS9509L-F085
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9310
**Stock**: 10+
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:-65A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | PowerTrench |
| Qualification | AEC-Q101 |
| Power Dissipation | 107W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DFN |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 65A |
| Drain Source On State Resistance | 0.008ohm |
| Gate Source Threshold Voltage Max | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2895712/)
**==> picture [309 x 319] intentionally omitted <==**
**----- Start of picture text -----**
www.onsemi.com
ON
-
FDWS9509L F085
(Note1)
P-Channel Logic Level Power Trench® MOSFET
- 40 V, - 65 A, 8.0 m
Features Top
Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A
Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Wettable flanks for automatic optical inspection (AOI)
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
goHs
Integrated Starter/Alternator ssas °
Distributed Power Architectures and VRM 2
=
Primary Switch for 12V Systems ( de=we
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
**----- End of picture text -----**
|**Symbol**
**Parameter**
VDSS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage|e||**Ratings**
**Units**
-40
V
±16
V|**Ratings**
**Units**
-40
V
±16
V|**Ratings**
**Units**
-40
V
±16
V|
|---|---|---|---|---|---|
|ID
Drain Current - Continuous(VGS=10) (Note 2)T
Pulsed Drain Current T|TC= 25°C
Pulsed Drain Current TC= 25°C|= 25°C|See Fi|-65
A
See Figure 4||
|EAS
Single Pulse Avalanche Energy|(Note 3)|||84|mJ|
|PD
Power Dissipation
Derate Above 25oC||||107
W
0.71
W/oC||
|TJ, TSTG
Operatingand Storage Temperature|||-55 to + 175|-55 to + 175|-55 to + 175
oC|
|RJC
Thermal Resistance, Junction to Case||||1.4|oC/W|
|RJA
Maximum Thermal Resistance, Junction to Ambient|Maximum Thermal Resistance, Junction to Ambient(Note 4)|||50|oC/W|
|**Package Marking and Ordering Information**||||||
|**Device Marking**
**Device**
**Package**|**Reel Size**|**Tape Width**|||**Quantity**|
|FDWS9509L
FDWS9509L-F085
Power 56|13”||12mm||3000 units|
|**Notes:**||||||
|1: Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a||||1: Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a||
|underscore will be replaced with a dash. This is a notification.||||||
## **Package Marking and Ordering Information**
- 2: Current is limited by bondwire configuration.
- 3: Starting TJ = 25°C, L = 50H, IAS = 56A, VDD = -40V during inductor charging and VDD = 0V during time in avalanche.
- 4: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2 ] pad of 2oz copper.
September, 2017, Rev. 1.0 FDWS9509L-F085/D
Semiconductor Components Industries, LLC, 2017 Publication Order Number:
**1**
**Electrical Characteristics** TJ
|**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
BVDSS
Drain-to-Source Breakdown Voltage
ID= -250A, VGS= 0V
-40
-
-
V
IDSS
Drain-to-Source Leakage Current
VDS= -40V, TJ= 25oC
-
-
1
A
VGS= 0V
TJ= 175oC (Note 5)
-
-
1
mA
IGSS
Gate-to-Source Leakage Current
VGS= ±16V
-
-
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250A
-1
-1.7
-3
V
RDS(on)
Drain to Source On Resistance
ID= -65A, VGS= -4.5V
-
10.7
15.3
ID= -65A,
VGS= -10V
TJ= 25oC
-
6.3
8.0
m
TJ= 175oC(Note 5)
-
10.6
13.0
m
Ciss
Input Capacitance
VDS= -20V, VGS= 0V,
f = 1MHz
-
3360
-
pF
Coss
Output Capacitance
-
1230
-
pF
Crss
Reverse Transfer Capacitance
-
38
-
pF
Rg
Gate Resistance
VGS= 0.5V, f = 1MHz
-
21
-
Qg(ToT)
Total Gate Charge
VGS= 0 to -10V
VDD= -20V
ID= -65A
-
48
67
nC
Qg(th)
Threshold Gate Charge
VGS= 0 to -2V
-
7
-
nC
Qgs
Gate-to-Source Gate Charge
-
12
-
nC
Qgd
Gate-to-Drain “Miller“ Charge
-
6
-
nC
**Switching Characteristics**
ton
Turn-On Time
VDD= -20V, ID= -65A,
VGS= -10V, RGEN= 6
-
-
22
ns
td(on)
Turn-On Delay
-
10
-
ns
tr
Rise Time
-
5
-
ns
td(off)
Turn-Off Delay
-
198
-
ns
tf
Fall Time
-
71
-
ns
toff
Turn-Off Time
-
-
405
ns
~~Oo~~
~~a~~
~~———==—~~
~~———" ae~~
~~SEE~~|**Off Characteristics**
**On Characteristics**
**Dynamic Characteristics**
**Symbol**
**Parameter**
**Test Conditions**
**Min.**
**Typ.**
**Max.**
**Units**
BVDSS
Drain-to-Source Breakdown Voltage
ID= -250A, VGS= 0V
-40
-
-
V
IDSS
Drain-to-Source Leakage Current
VDS= -40V, TJ= 25oC
-
-
1
A
VGS= 0V
TJ= 175oC (Note 5)
-
-
1
mA
IGSS
Gate-to-Source Leakage Current
VGS= ±16V
-
-
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250A
-1
-1.7
-3
V
RDS(on)
Drain to Source On Resistance
ID= -65A, VGS= -4.5V
-
10.7
15.3
ID= -65A,
VGS= -10V
TJ= 25oC
-
6.3
8.0
m
TJ= 175oC(Note 5)
-
10.6
13.0
m
Ciss
Input Capacitance
VDS= -20V, VGS= 0V,
f = 1MHz
-
3360
-
pF
Coss
Output Capacitance
-
1230
-
pF
Crss
Reverse Transfer Capacitance
-
38
-
pF
Rg
Gate Resistance
VGS= 0.5V, f = 1MHz
-
21
-
Qg(ToT)
Total Gate Charge
VGS= 0 to -10V
VDD= -20V
ID= -65A
-
48
67
nC
Qg(th)
Threshold Gate Charge
VGS= 0 to -2V
-
7
-
nC
Qgs
Gate-to-Source Gate Charge
-
12
-
nC
Qgd
Gate-to-Drain “Miller“ Charge
-
6
-
nC
**Switching Characteristics**
ton
Turn-On Time
VDD= -20V, ID= -65A,
VGS= -10V, RGEN= 6
-
-
22
ns
td(on)
Turn-On Delay
-
10
-
ns
tr
Rise Time
-
5
-
ns
td(off)
Turn-Off Delay
-
198
-
ns
tf
Fall Time
-
71
-
ns
toff
Turn-Off Time
-
-
405
ns
~~Oo~~
~~a~~
~~———==—~~
~~———" ae~~
~~SEE~~|
|---|---|
|**Drain-Source Diode Characteristics**||
|**Note:**
VSD
Source-to-Drain Diode Voltage
ISD= -65A, VGS = 0V
-
1.0
-1.25
V
ISD= -32.5A, VGS = 0V
-
0.9
-1.2
V
trr
Reverse-RecoveryTime
IF= -65A, dISD/dt = 100A/s
-
57
80
ns
Qrr
Reverse-Recovery Charge
-
45
67
nC
~~——==~~||
5: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
www.onsemi.com
**2**
## **Typical Characteristics**
**==> picture [433 x 544] intentionally omitted <==**
**----- Start of picture text -----**
1.2 100
VGS = -10V
90
1.0 ee
80
70
0.8
CNCEPE | 60 OBESE
0.6 50
40 CURRENT LIMITED
0.4 BY PACKAGE
FEPREER) 6G 30 BRE
20
0.2
== 10
0.0 CECE = 0 SR
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)
Figure 1. Normalized Power Dissipation vs. Case Figure 2. Maximum Continuous Drain Current vs.
Temperature Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10 P DM
0.05
0.02
0.1 0.01 t 1
t2
o SINGLE PULSE NOTES: ah
DUTY FACTOR: D = t 1 /t 2
PEAK TJ = PDM x Z JC x R JC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
T C = 25 [o] C VGS = -10V
FOR TEMPERATURES
ABOVE 25 [o] C DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25 175 - TC
150
100
stilaimeeil
SINGLE PULSE
10
10-5 10-4 10-3 10-2 10-1 1 10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
, DRAIN CURRENT (A)
D
-I
POWER DISSIPATION MULTIPLIER
IMPEDANCE, ZJC
NORMALIZED THERMAL
PEAK CURRENT (A)
,
IDM
**----- End of picture text -----**
www.onsemi.com
**3**
## **Typical Characteristics**
**==> picture [420 x 580] intentionally omitted <==**
**----- Start of picture text -----**
1000 100 If R = 0 If R t tAVAV = = (L)(I 0(L/RAS)ln[ )/(1.3 (IAS ** R RATED BV )/(1.3 * RATED BVDSS - V DDDSS ) - VDD) +1]
100
STARTING TJ = 25 [o] C
10 100 s 10
OPERATION IN THIS
AREA MAY BE 1ms STARTING TJ = 150 [o] C
LIMITED BY rDS(on)
1 SINGLE PULSE 10ms
TJ = MAX RATED 100ms
TC = 25 [o] C
1
0.1 0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100 200 tAV, TIME IN AVALANCHE (ms)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ONsemi Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability
300 300
PULSE DURATION = 250 s 100 VGS = 0 V
DUTY CYCLE = 0.5% MAX
TE
250
VDS = -5V
10
200 Te TJ = 175 [o] C
TJ = 175 [o] C
1
150 ae TJ = 25 [o] C TJ = 25 [ o] C
0.1
100
mo acne
T J = -55 [ o] C
50 7s 0.01
TJ = -55 [o] C
ann
0 0.001
2 3 4 5 6 7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics
300 250
250 V250Tj=25GS s PULSE WIDTH [o] C 200 Tj=175250 s PULSE WIDTH [o] C
-10V Top VGS
-7V -10V Top
200 -5V -7V
-4.5V-4V 150 -5V -4.5V
150 iP -3.5V Bottom SsZssiaee=oP -4V ee
-3.5V Bottom
p= 100 =a
100
Za Za
50
50
L-_—— freee
0 A) 0 Ae
0 1 2 3 4 5 0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics Figure 10. Saturation Characteristics
, DRAIN CURRENT (A)
D
-I
, AVALANCHE CURRENT (A)
AS
-I
, DRAIN CURRENT (A)
-ID , REVERSE DRAIN CURRENT (A)S
-I
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
D D
-I -I
**----- End of picture text -----**
www.onsemi.com
**4**
**==> picture [428 x 215] intentionally omitted <==**
**----- Start of picture text -----**
Typical Characteristics
60 1.7
DUTY CYCLE = 0.5% MAXPULSE DURATION = 250 s 1.6 DUTY CYCLE = 0.5% MAXPULSE DURATION = 250 s
50 lf ID = -65A . 1.5 TT
1.4 ID = -65A
40 VGS = -10V
Mo 1.3 eee
30 1.2
1.1
20 Abe pp) ERRERRRSE E
TJ = 175 [o] C 1.0
0.9
10
0.8
TJ = 25 [o] C
0 | rer 0.7 CALE EEE
3 4 5 6 7 8 9 10 -75 -50 -25 0 25 50 75 100 125 150 175
-VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE( [o] C)
Figure 11. RDSON vs. Gate Voltage Figure 12. Normalized RDSON vs. Junction
Temperature
)
m
, DRAIN TO SOURCE NORMALIZED
ON-RESISTANCE (
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE
**----- End of picture text -----**
**==> picture [429 x 382] intentionally omitted <==**
**----- Start of picture text -----**
1.25 1.8
VGS = VDS
ID = -250 A ID = -5mA
1.00 1.5
0.75 1.2
0.50 0.9
0.25 0.6
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE( [o] C) TJ, JUNCTION TEMPERATURE ( [o] C)
Figure 13. Normalized Gate Threshold Voltage vs. Figure 14. Normalized Drain to Source
Temperature Breakdown Voltage vs. Junction Temperature
10000 10
Ciss ID = -65A VDD = -16V
8
1000 Coss V DD = -20V
6
VDD = -24V
4
100
ee f = 1MHz C rss 2 Oe
VGS = 0V
10 0 ZET
0.1 1 10 150 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source Figure 16. Gate Charge vs. Gate to Source
Voltage Voltage
NORMALIZED GATE
THRESHOLD VOLTAGE BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
-V
**----- End of picture text -----**
www.onsemi.com
**5**
**DFN8 5.1x6.3, 1.27P** CASE 506DW ISSUE O
**==> picture [463 x 537] intentionally omitted <==**
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**1**
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---
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