# Dual MOSFET, P Channel, 60 V, 60 V, 2.9 A, 2.9 A ![Product image](https://novapart.co/image/farnell:3003967/) **URL**: https://novapart.co/products/FDS9958-F085/dual-mosfet-p-channel-60-v-29-a **SKU**: FDS9958-F085 **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Dual MOSFETs **Price**: €0.5860 **Stock**: 10+ ## Description Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.082ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Volt ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 8Pins | | Channel Type | P Channel | | Product Range | PowerTrench Series | | Qualification | - | | Transistor Case Style | SOIC | | Operating Temperature Max | 150°C | | Power Dissipation N Channel | 2W | | Power Dissipation P Channel | 2W | | Drain Source Voltage Vds N Channel | 60V | | Drain Source Voltage Vds P Channel | 60V | | Continuous Drain Current Id N Channel | 2.9A | | Continuous Drain Current Id P Channel | 2.9A | | Drain Source On State Resistance N Channel | - | | Drain Source On State Resistance P Channel | 0.105ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003967/) ## **- FDS9958 F085** ## **Dual P-Channel PowerTrench[®] MOSFET -60V, -2.9A, 105m** Ω ## **General Description** ## **Features** These P-channel logic level specified MOSFETs are produced using ON Semiconductor’s advanced PowerTrench[®] process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. **==> picture [396 x 228] intentionally omitted <==** **----- Start of picture text -----**
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
switching performance.
Qualified to AEC Q101
RoHS Compliant
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
D2 5 4 G2
D1
D1
D2 6 Q2 3 S2
G2 D1 7 2 G1
S2
Q1
G1 D1 8 1 S1
&
S1
Pin 1
**----- End of picture text -----**
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. |||**SO-8**||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |**MOSFET Maximum Ratings**|**MOSFET Maximum Ratings **TA= 25°C unless otherwise noted||= 25°C unless otherwise noted|||||||||| |**Symbol**||||**Parameter**||||**Ratings**||||**Units**| |VDS|Drain to Source Volta|Drain to Source Voltage|||||||-60|||V| |VGS|Gate to Source Voltage||||||||±20|||V| |ID|Drain Current -Continuous
-Pulsed|||||(Note 1a)|||-2.9
-12|||A| |EAS|Single Pulse Avalanche Energy|||||(Note 3)|||54|||mJ| ||Power Dissipation for Dual Operation||||||||2|||| |PD|Power Dissipation|||||(Note 1a)|||1.6|||W| ||Power Dissipation|||||(Note 1b)|||0.9|||| |TJ, TSTG|Operatingand Storage Junction Temperature Ran||e Junction Temperature Range|||||-55 to +150|-55 to +150|||°C| |**Thermal Characteristics**||||||||||||| |RθJC
RθJA
~~__—~~|Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient||Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient|||(Note 1a)|||40
78|||°C/W| |**Package Marking and Ordering Information**||||||||||||| |**Device Marking**
FDS9958
~~[_~~||**Device**
FDS9958-F085||**Package**
SO-8||**Reel Size**
330mm||**Tape Width**
12mm|||**Quantity**
2500units|| **1** ©2016 Semiconductor Components Industries, LLC. September-2017, Rev.2 Publication Order Number: FDS9958-F085/D **Electrical Characteristics** TJ = 25°C unless otherwise noted |**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250µA, VGS= 0V
-60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, referenced to 25°C
-52
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -48V,
-1
µA
VGS= 0V
TJ= 125°C
-100
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250µA
-1.0
-1.6
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250µA, referenced to 25°C
4
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10V, ID= -2.9A
82
105
mΩ
VGS= -4.5V, ID= -2.5A
103
135
VGS= -10V, ID= -2.9A, TJ= 125°C
131
190
gFS
Forward Transconductance
VDD= -5V, ID= -2.9A
7.7
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -30V, VGS= 0V,
f = 1MHz
765
1020
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
65
pF
**Switching Characteristics**
~~=~~
~~—-_-—s~~
~~——~~
~~=~~|**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Units**
**Off Characteristics**
BVDSS
Drain to Source Breakdown Voltage
ID= -250µA, VGS= 0V
-60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, referenced to 25°C
-52
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -48V,
-1
µA
VGS= 0V
TJ= 125°C
-100
IGSS
Gate to Source Leakage Current
VGS= ±20V, VDS= 0V
±100
nA
**On Characteristics**
VGS(th)
Gate to Source Threshold Voltage
VGS= VDS, ID= -250µA
-1.0
-1.6
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID= -250µA, referenced to 25°C
4
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS= -10V, ID= -2.9A
82
105
mΩ
VGS= -4.5V, ID= -2.5A
103
135
VGS= -10V, ID= -2.9A, TJ= 125°C
131
190
gFS
Forward Transconductance
VDD= -5V, ID= -2.9A
7.7
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -30V, VGS= 0V,
f = 1MHz
765
1020
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
65
pF
**Switching Characteristics**
~~=~~
~~—-_-—s~~
~~——~~
~~=~~| |---|---| |td(on)
Turn-On DelayTime
VDD= -30V, ID= -2.9A,
VGS= -10V, RGEN= 6Ω
6
12
tr
Rise Time
3
10
td(off)
Turn-Off DelayTime
27
43|ns
ns
ns| |tf
Fall Time
6
12|ns| |Qg
Total Gate Charge
VGS= 0V to -10V
VDD= -30V,
ID= -2.9A
16
23
nC
Qg
Total Gate Charge
VGS= 0V to -4.5V
8
12
nC
Qgs
Gate to Source Charge
2
nC
Qgd
Gate to Drain “Miller” Charge
3
nC
~~Sa~~|| |**Drain-Source Diode Characteristics**
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -1.3A(Note 2)
-0.8
-1.2
V
trr
Reverse RecoveryTime
IF= -2.9A, di/dt = 100A/µs
26
42
ns
Qrr
Reverse RecoveryCharge
35
nC
NOTES:
1. RθJAis determined with the device mounted on a 1in2pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθCAis determined by
21
~~———~~
~~=~~|| |the user's board design.|| |b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
—e|| 2. Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10V. **www.onsemi.com 2** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [471 x 576] intentionally omitted <==** **----- Start of picture text -----**
12 2.5
VGS = -10V VGS = -4V
10 VGS = -3.5V VGS = -3V
VGS = -5V 2.0 VGS = -3.5V
8
VGS = -4.5V VGS = -4V
6 1.5
VGS = -3V
4 VGS = -4.5V VGS = -5V
1.0
2 PULSE DURATION = 300DUTY CYCLE = 2.0%MAX µ s PULSE DURATION = 300 µ s VGS = -10V
DUTY CYCLE = 2.0%MAX
0 0.5
0 1 2 3 4 0 2 4 6 8 10 12
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8 240
ID = -2.9A ID = -2.9A PULSE DURATION = 300DUTY CYCLE = 2.0%MAX µ s
1.6 VGS = -10V 210
1.4 180
TJ = 125 [o] C
1.2 150
1.0 120
TJ = 25 [o] C
90
0.8
60
0.6
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( [o] C) -VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to
vs Junction Temperature Source Voltage
12 20
PULSE DURATION = 300 µ s 10
10 DUTY CYCLE = 2.0%MAX VGS = 0V
VDD = -5V 1
8 TJ = 150 [o] C
6 0.1 TJ = 25 [o] C
4 TJ = 150 [o] C TJ = -55 [o] C
0.01
TJ = 25 [o] C
2
TJ = -55 [o] C
1E-3
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 1 2 3 4 5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
NORMALIZED
DRAIN CURRENT (A)
,
D
-I
DRAIN TO SOURCE ON-RESISTANCE
)
Ω
m
(
NORMALIZED , DRAIN TO
rDS(on)
DRAIN TO SOURCE ON-RESISTANCE SOURCE ON-RESISTANCE
, DRAIN CURRENT (A)
-ID , REVERSE DRAIN CURRENT (A)S
-I
**----- End of picture text -----**
**www.onsemi.com 3** ## **Typical Characteristics** TJ = 25°C unless otherwise noted **==> picture [469 x 575] intentionally omitted <==** **----- Start of picture text -----**
10 2000
ID = -2.9A 1000
8 VDD = -20V Ciss
6
VDD = -30V
4 100 Coss
VDD = -40V
Crss
2 f = 1MHz
VGS = 0V
0 10
0 5 10 15 20 0.1 1 10 60
Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
4 3.0
2.5
3
2.0
VGS = -4.5V VGS = -10V
2 TJ = 25 [o] C 1.5
TJ = 125 [o] C 1.0
R θ JA = 78oC/W
0.5
1 0.0
0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE (oC)
Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain
Switching Capability Current vs Ambient Temperature
20 200
10 0.1ms 100 VGS = -10V SINGLE PULSE
R θ JA = 135 [o] C/W
1ms TA = 25 [o] C
1
THIS AREA IS 10ms 10
LIMITED BY r
DS(on) 100ms
0.1 SINGLE PULSE
TJ = MAX RATED 1s
R θ JA = 135 [o] C/W 10s 1
TA = 25 [o] C DC
0.01 0.5
0.1 1 10 100 200 10-3 10-2 10-1 100 101 102 103
-VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation
CAPACITANCE (pF)
, GATE TO SOURCE VOLTAGE(V)
GS
-V
DRAIN CURRENT (A)
,
D
-I
, AVALANCHE CURRENT(A)
AS
-I
, DRAIN CURRENT (A)
D
-I
PEAK TRANSIENT POWER (W)
P)(PK,
**----- End of picture text -----**
**www.onsemi.com 4** **==> picture [469 x 225] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05 PDM
0.1 0.02
0.01
t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
0.01 R θ JA = 135 [o] C/W PEAK TJ = PDM x Z θ JA x R θ JA + TA
0.005
10-3 10-2 10-1 100 101 102 103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
Z JA θ
IMPEDANCE,
NORMALIZED THERMAL
**----- End of picture text -----**
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